Optical Properties of Solid from DFT

Size: px
Start display at page:

Download "Optical Properties of Solid from DFT"

Transcription

1 Optical Properties of Solid from DFT 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India & Center for Materials Science and Nanotechnology, University of Oslo, Norway

2 Light Matter Interaction Response to external electric field E 2 Polarizability: Linear approximation: Electric susceptibility c conductivity s Displacement Field D is defined as dielectric tensor Fourier transform:

3 Optical absorption in Semiconductors 3 We want to develop a set of equations to describe the absorption of a photon in semiconductor material. The electromagnetic field is a quantized system (with a set of modes, each of which is a harmonic oscillator). In absorption, a photon is absorbed by the crystal and the energy of the electromagnetic field is transferred to the crystal. The initial state in the region of interest in the crystal is E i,while the final state is E f.

4 What are the assumptions and approximations we must consider? The electromagnetic field is perturbed by the electronic crystal. 4 If the wavelength associated with a mono-energetic field is larger than the perturbing charge (like in an atom or quantum dot), then we can make the dipole approximation and assume there is no position dependence to the field (and solve just using the time-dependent field E(t)=E 0 sin( t)). Otherwise, we assume, Bloch waves. We can assume the intensity of the field is large, so that changes in the photon number in each mode is small. Called semiclassical approximation (which we will make most of the time). This means we neglect the action of the charge back on to the field (back action).

5 Fermi s Golden Rule 5 In order to determine the probability or amplitude of the absorption we must find the overlap of the initial and final wavefunctions. Instead of single initial and final states in single-particle picture, we have in principle a large density of final states - (k) The probability of absorption or emission will depend on the overlap and energy difference of the initial and final state, and the density of these states.

6 In quantum structures case 6 Choice of the wavefunctions for the initial and final states Two different kinds of possibilities in quantum structure Transitions between the valence and conduction bands Transitions between the quantum-confined states within a given band, so-called "intersubband transitions E C.B E 2 Barrier QW Barrier Pump Probe E g E 1 Emission E 2 E 1 LH x HH x E g e1-e2 ISBT K HH 1 HH 1 LH 1 V.B LH 1 Resonant optical transition

7 Energy Light Scattering: Interband transition 7 band structure c k EF E interband transition intraband transition S v k wave vector

8 Linear optical parameters 8 Complex dielectric tensor: Kramers-Kronig relations Optical conductivity: Complex refractive index: Reflectivity: Absorption coefficient: Loss function:

9 Intraband Contributions: Metals 9 Dielectric Tensor: Drude-like terms Optical conductivity: Plasma frequency:

10 Optical Sum rules 10

11 Form of wavefunctions for "non-excitonic quantum well absorption (quantum well) 11 Start by neglecting any excitonic effects (and other Coulomb effects many particle effects) Treat the initial state as being some electron state corresponding to an electron in the valence band or some lower subband Treat the final state as an electron in the conduction band or a higher subband The absorption process is an interaction between the matter and the electromagnetic field.

12 General aspects Optical absorption and luminescence occur by transition of electrons and holes between electronic states (bands, tail states, gap states). If electron-phonon coupling is strong enough self-trapping occurs. Choose valence band wavefunction as initial state. Conduction band wavefunction as the final state.

13 Optical Absorption Absorption coefficient α is defined by I(z) = I o exp {- α z} where I(z) is the flux density if incident light is I o, z is the distance measured from the incident surface. Hence α = - (1/I(z)) di(z)/dz

14 Tauc law (Tauc plot, A region) The absorption coefficient, α, due to interband transition near the band-gap is well described: αħω = B (ħ ω E g ) 2 ħω is photon energy, E g is optical gap. This Tauc plot defines the optical gap in semiconductors.

15 Urbach Tail in Absorption 15

16 Urbach tail (B region) The absorption coefficient at the photon energy below the optical gap (tail absorption) depends exponentially on the photon energy: α(ħ ω) ~ exp (ħ ω/e u ) where E u is called Urbach energy. In addition, optical absorption by defects also appears at energy lower than optical gap (C region). Likewise α is written as another exponential function of photon energy: α(ħω) ~ exp (ħω/e d ), E d belongs to the width of the defect states. C region is rather sensitive to the structural properties of materials.

17 Photoluminescence Photoluminescence occurs as a result of the transition of electrons and holes from excited states to ground state. After interband excitation, electrons (holes) relax to the bottom (top) of the conduction (valence) band by emitting phonons much more quickly than the radiative transition. In the case of crystalline semiconductors (without defects, there is no localized state) photoluminescence occurs by transition between the bottom of the conduction band and the top of the valence band. k selection rule must be satisfied: k photon = k i k f. (k photon, k i and, k f are the wave numbers of photons, electron of initial and final states.

18 Direct/indirect transition Since k photon is much smaller than k i and k f, we can rewrite the selection rule: k i = k f. The semiconductors satisfying this condition is called direct-gap semiconductors. c-si is not satisfying k-selection rule (indirect-gap semiconductor). Transition is allowed by either absorption of phonons or their emission.

19 Microscopic Theory of Linear Optical Properties of Semiconductors 19

20 20

21 21

22 22

23 23

24 24

25 Semic-classical Theory of Interband Transitions 25

26 Optical Transitions 26

27 Optical Properties 27

28 Beer Lambert Law 28

29 Absorption in Semiconductors : processes 29

30 Absorption in semiconductors: processes cont. 30

31 Optical Properties: Semiconductors & Insulators 31

32 Optical Properties : Impurities 32

33 Absorption in semiconductors: band-to-band 33

34 Direct band gap and Indirect band gap 34

35 Indirect Band Gap 35

36 Interband absorption above the band gap 36

37 Dielectric Function and Critical Points in Ge 37

38 Comparing Direct and Indirect Bandgap Absorption 38

39 Optical absorptions in Si 39

40 40

41 RPA Approximation 41

42 42 One can predict optical properties from DFT calculations

43 Silicon Optical Absorption 43

44 Joint Density of States 44

45 Band edge absorption in direct gap semiconductors 45

46 External Electric and Magnetic Field Effects 46

47 Radiative and Non-radiative Recombination 47

48 Feasible Recombination Processes 48

49 Interband absorption 49

50 Interband absorption. 50

51 Direct versus indirect absorption 51

52 Silicon band structure 52

53 Summary of Indirect optical transitions 53

54 Phonon Assisted Optical Transition 54

55 Excitonic Effect : Two particle (e-h) interaction 55

56 Absorption via Excitons 56

57 Electron-Hole interaction: Excitons 57

58 Experimental Absorption Edges with exciton 58

59 Exciton Effect above the bandgap 59

60 Plasma reflectivity : metals 60

61 Drude Model 61

62 Interband transitions in metals 62

63 Noble Metals : Copper 63

64 Band structure and DOS in Copper 64

65 Doped Semiconductors 65

66 Optical transitions in semiconductors: Impurities 66

67 Donor absorption in n-type silicon 67

68 Optical Anisotropy 68

69 Symmetry of Dielectric Tensor 69 triclinic monoclinic (a,b=90 ) orthorhombic tetragonal, hexagonal cubic

70 Convergence : Al 70 Interband Im k 286k 560k 1240k 2456k 3645k 4735k p k-points in IBZ Energy [ev]

71 N eff [electrons] Sumrules : Al 165 k-points 4735 k-points Experiment Energy [ev]

72 Example: Al Loss Function 72 Loss function intraband interband total Energy [ev]

73 73 Role of plasmons on Optical Properties Plasmons play a large role in the optical properties of metals. Light of frequencies below the plasma frequency is reflected, because the electrons in the metal screen the electric field of the light. Light of frequencies above the plasma frequency is transmitted, because the electrons cannot respond fast enough to screen it. In most metals, the plasma frequency is in the ultraviolet, making them shiny (reflective) in the visible range. Some metals, such as copper and gold, have electronic interband transitions in the visible range, whereby specific light energies (colors) are absorbed, yielding their distinct color

74 74

75 75

76 Sum Rules. 76

77 Optical Properties of Metals. 77

78 Optical Properties of Metals: Al and Pd 78

79 Optical Properties of Metals: Cu and Cd 79

80 Joint Density of States (JDOS) 80

81 Dielectric Function (Real and Imaginary parts) 81

82 Comparison of theory vs. Experiment: ε2(ω) for Ge 82

83 Absorption Coefficient : α(ε) 83

84 Index of Refraction: n(ω) 84

85 Optical Properties: Reflectance & Dielectric Function : Si 85

86 Optical Properties: Reflectance & Dielectric Function : GaAs 86

87 Sensitivity of Reflectivity to Surface Contamination 87

88 Crystalline vs. Amorphous (Exp & Theory) 88

89 Origin of strong change in absorption 89

90 90 Band structure of Au: relativistic effects

91 DOS and Joint DOS for Au: relativistic effect 91

92 Dielectric function for Au: relativistic effect 92

93 Reflectivity: Theory vs. Experiment for Pt 93

94 Optical Spectra : Impact on Solar Cells 94

95 Optical Spectra : Impact on Solar Cells 95

96 Current Developments 96 Kohn-Sham theory Gradient Corrections (GGA) LDA + U Exact Exchange (EXX) non-local effects correlation effects band gap problem Generalized Kohn-Sham theory Self-interaction correction (SIC) Non-local exchange / screened exchange Time dependent DFT response to time-dependet perturbation Many-body perturbation theory GW + Bethe-Salpeter equation band gap problem excitonic effects

97 Theory of Optical Properties 97

98 98

Optical Properties of Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Optical Properties of Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Optical Properties of Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Light Matter Interaction Response to external electric

More information

Optical Characterization of Solids

Optical Characterization of Solids D. Dragoman M. Dragoman Optical Characterization of Solids With 184 Figures Springer 1. Elementary Excitations in Solids 1 1.1 Energy Band Structure in Crystalline Materials 2 1.2 k p Method 11 1.3 Numerical

More information

Review of Optical Properties of Materials

Review of Optical Properties of Materials Review of Optical Properties of Materials Review of optics Absorption in semiconductors: qualitative discussion Derivation of Optical Absorption Coefficient in Direct Semiconductors Photons When dealing

More information

Optical Properties of Lattice Vibrations

Optical Properties of Lattice Vibrations Optical Properties of Lattice Vibrations For a collection of classical charged Simple Harmonic Oscillators, the dielectric function is given by: Where N i is the number of oscillators with frequency ω

More information

Luminescence Process

Luminescence Process Luminescence Process The absorption and the emission are related to each other and they are described by two terms which are complex conjugate of each other in the interaction Hamiltonian (H er ). In an

More information

Lecture 3: Optical Properties of Insulators, Semiconductors, and Metals. 5 nm

Lecture 3: Optical Properties of Insulators, Semiconductors, and Metals. 5 nm Metals Lecture 3: Optical Properties of Insulators, Semiconductors, and Metals 5 nm Course Info Next Week (Sept. 5 and 7) no classes First H/W is due Sept. 1 The Previous Lecture Origin frequency dependence

More information

Electronic and Optoelectronic Properties of Semiconductor Structures

Electronic and Optoelectronic Properties of Semiconductor Structures Electronic and Optoelectronic Properties of Semiconductor Structures Jasprit Singh University of Michigan, Ann Arbor CAMBRIDGE UNIVERSITY PRESS CONTENTS PREFACE INTRODUCTION xiii xiv 1.1 SURVEY OF ADVANCES

More information

Claudia Ambrosch-Draxl, University of Leoben, Austria Chair of Atomistic Modelling and Design of Materials

Claudia Ambrosch-Draxl, University of Leoben, Austria Chair of Atomistic Modelling and Design of Materials Excited state properties p within WIEN2k Claudia Ambrosch-Draxl, University of Leoben, Austria Chair of Atomistic Modelling and Design of Materials Beyond the ground state Basics about light scattering

More information

Optical and Photonic Glasses. Lecture 39. Non-Linear Optical Glasses III Metal Doped Nano-Glasses. Professor Rui Almeida

Optical and Photonic Glasses. Lecture 39. Non-Linear Optical Glasses III Metal Doped Nano-Glasses. Professor Rui Almeida Optical and Photonic Glasses : Non-Linear Optical Glasses III Metal Doped Nano-Glasses Professor Rui Almeida International Materials Institute For New Functionality in Glass Lehigh University Metal-doped

More information

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES Jasprit Singh University of Michigan McGraw-Hill, Inc. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal

More information

Luminescence basics. Slide # 1

Luminescence basics. Slide # 1 Luminescence basics Types of luminescence Cathodoluminescence: Luminescence due to recombination of EHPs created by energetic electrons. Example: CL mapping system Photoluminescence: Luminescence due to

More information

PH575 Spring Lecture #20 Semiconductors: optical properties: Kittel Ch. 8 pp ; Ch 15 pp

PH575 Spring Lecture #20 Semiconductors: optical properties: Kittel Ch. 8 pp ; Ch 15 pp PH575 Spring 2014 Lecture #20 Semiconductors: optical properties: Kittel Ch. 8 pp. 187-191; Ch 15 pp. 435-444 Figure VI-1-1: Different types of optical absorption phenomena; (1) transitions of highlying

More information

Lecture 20 Optical Characterization 2

Lecture 20 Optical Characterization 2 Lecture 20 Optical Characterization 2 Schroder: Chapters 2, 7, 10 1/68 Announcements Homework 5/6: Is online now. Due Wednesday May 30th at 10:00am. I will return it the following Wednesday (6 th June).

More information

CHAPTER 9 FUNDAMENTAL OPTICAL PROPERTIES OF SOLIDS

CHAPTER 9 FUNDAMENTAL OPTICAL PROPERTIES OF SOLIDS CHAPTER 9 FUNDAMENTAL OPTICAL PROPERTIES OF SOLIDS Alan Miller Department of Physics and Astronomy Uni ersity of St. Andrews St. Andrews, Scotland and Center for Research and Education in Optics and Lasers

More information

SEMICONDUCTOR PHYSICS REVIEW BONDS,

SEMICONDUCTOR PHYSICS REVIEW BONDS, SEMICONDUCTOR PHYSICS REVIEW BONDS, BANDS, EFFECTIVE MASS, DRIFT, DIFFUSION, GENERATION, RECOMBINATION February 3, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles

More information

OPTICAL PROPERTIES of Nanomaterials

OPTICAL PROPERTIES of Nanomaterials OPTICAL PROPERTIES of Nanomaterials Advanced Reading Optical Properties and Spectroscopy of Nanomaterials Jin Zhong Zhang World Scientific, Singapore, 2009. Optical Properties Many of the optical properties

More information

Lecture contents. Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect. NNSE 618 Lecture #15

Lecture contents. Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect. NNSE 618 Lecture #15 1 Lecture contents Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect Absorption edges in semiconductors Offset corresponds to bandgap Abs. coefficient is orders

More information

Nanophysics: Main trends

Nanophysics: Main trends Nano-opto-electronics Nanophysics: Main trends Nanomechanics Main issues Light interaction with small structures Molecules Nanoparticles (semiconductor and metallic) Microparticles Photonic crystals Nanoplasmonics

More information

Physics of Low-Dimensional Semiconductor Structures

Physics of Low-Dimensional Semiconductor Structures Physics of Low-Dimensional Semiconductor Structures Edited by Paul Butcher University of Warwick Coventry, England Norman H. March University of Oxford Oxford, England and Mario P. Tosi Scuola Normale

More information

Chapter 3 Properties of Nanostructures

Chapter 3 Properties of Nanostructures Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,

More information

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states: CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave

More information

Lecture 15: Optoelectronic devices: Introduction

Lecture 15: Optoelectronic devices: Introduction Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1

More information

Energy Band Calculations for Dynamic Gain Models in Semiconductor Quantum Well Lasers

Energy Band Calculations for Dynamic Gain Models in Semiconductor Quantum Well Lasers Energy Band Calculations for Dynamic Gain Models in School of Electrical and Electronic Engineering University of Nottingham; Nottingham NG7 2RD; UK Email: eexpjb1@nottingham.ac.uk Presentation Outline

More information

wave mechanics applied to semiconductor heterostructures

wave mechanics applied to semiconductor heterostructures wave mechanics applied to semiconductor heterostructures GERALD BASTARD les editions de physique Avenue du Hoggar, Zone Industrielle de Courtaboeuf, B.P. 112, 91944 Les Ulis Cedex, France Contents PREFACE

More information

Minimal Update of Solid State Physics

Minimal Update of Solid State Physics Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary

More information

Optical Properties with Wien2k

Optical Properties with Wien2k Optical Properties with Wien2k Elias Assmann Vienna University of Technology, Institute for Solid State Physics WIEN2013@PSU, Aug 13 Menu 1 Theory Screening in a solid Calculating ϵ: Random-Phase Approximation

More information

Optics and Quantum Optics with Semiconductor Nanostructures. Overview

Optics and Quantum Optics with Semiconductor Nanostructures. Overview Optics and Quantum Optics with Semiconductor Nanostructures Stephan W. Koch Department of Physics, Philipps University, Marburg/Germany and Optical Sciences Center, University of Arizona, Tucson/AZ Overview

More information

Optical Properties of Solids LM Herz Trinity Term 2014

Optical Properties of Solids LM Herz Trinity Term 2014 Optical Properties of Solids LM Herz Trinity Term 2014 Contents: I. Absorption and Reflection II. Interband optical transitions III. Excitons IV. Low-dimensional systems V. Optical response of an electron

More information

Plasmonics. The long wavelength of light ( μm) creates a problem for extending optoelectronics into the nanometer regime.

Plasmonics. The long wavelength of light ( μm) creates a problem for extending optoelectronics into the nanometer regime. Plasmonics The long wavelength of light ( μm) creates a problem for extending optoelectronics into the nanometer regime. A possible way out is the conversion of light into plasmons. They have much shorter

More information

nano.tul.cz Inovace a rozvoj studia nanomateriálů na TUL

nano.tul.cz Inovace a rozvoj studia nanomateriálů na TUL Inovace a rozvoj studia nanomateriálů na TUL nano.tul.cz Tyto materiály byly vytvořeny v rámci projektu ESF OP VK: Inovace a rozvoj studia nanomateriálů na Technické univerzitě v Liberci Units for the

More information

Spectroscopy of. Semiconductors. Luminescence OXFORD IVAN PELANT. Academy ofsciences of the Czech Republic, Prague JAN VALENTA

Spectroscopy of. Semiconductors. Luminescence OXFORD IVAN PELANT. Academy ofsciences of the Czech Republic, Prague JAN VALENTA Luminescence Spectroscopy of Semiconductors IVAN PELANT Institute ofphysics, v.v.i. Academy ofsciences of the Czech Republic, Prague JAN VALENTA Department of Chemical Physics and Optics Charles University,

More information

sin[( t 2 Home Problem Set #1 Due : September 10 (Wed), 2008

sin[( t 2 Home Problem Set #1 Due : September 10 (Wed), 2008 Home Problem Set #1 Due : September 10 (Wed), 008 1. Answer the following questions related to the wave-particle duality. (a) When an electron (mass m) is moving with the velocity of υ, what is the wave

More information

Electron energy loss spectroscopy (EELS)

Electron energy loss spectroscopy (EELS) Electron energy loss spectroscopy (EELS) Phil Hasnip Condensed Matter Dynamics Group Department of Physics, University of York, U.K. http://www-users.york.ac.uk/~pjh503 Many slides courtesy of Jonathan

More information

The Electromagnetic Properties of Materials

The Electromagnetic Properties of Materials The Electromagnetic Properties of Materials Electrical conduction Metals Semiconductors Insulators (dielectrics) Superconductors Magnetic materials Ferromagnetic materials Others Photonic Materials (optical)

More information

Exciton spectroscopy

Exciton spectroscopy Lehrstuhl Werkstoffe der Elektrotechnik Exciton spectroscopy in wide bandgap semiconductors Lehrstuhl Werkstoffe der Elektrotechnik (WW6), Universität Erlangen-Nürnberg, Martensstr. 7, 91058 Erlangen Vortrag

More information

Microscopic Modelling of the Optical Properties of Quantum-Well Semiconductor Lasers

Microscopic Modelling of the Optical Properties of Quantum-Well Semiconductor Lasers Microscopic Modelling of the Optical Properties of Quantum-Well Semiconductor Lasers Stephan W. Koch Department of Physics Philipps University, Marburg/Germany OVERVIEW - Outline of Theory - Gain/Absorption

More information

Reviewers' comments: Reviewer #1 (Remarks to the Author):

Reviewers' comments: Reviewer #1 (Remarks to the Author): Reviewers' comments: Reviewer #1 (Remarks to the Author): The work is very interesting as it presents a way to reduce the ohmic losses in the metals in the finite range of frequencies. In this the work

More information

interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics

interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics interband transitions in quantum wells Atomic wavefunction of carriers in

More information

Chemistry Instrumental Analysis Lecture 8. Chem 4631

Chemistry Instrumental Analysis Lecture 8. Chem 4631 Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device

More information

Excess carriers: extra carriers of values that exist at thermal equilibrium

Excess carriers: extra carriers of values that exist at thermal equilibrium Ch. 4: Excess carriers In Semiconductors Excess carriers: extra carriers of values that exist at thermal equilibrium Excess carriers can be created by many methods. In this chapter the optical absorption

More information

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV 3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the

More information

Nonlinear Electrodynamics and Optics of Graphene

Nonlinear Electrodynamics and Optics of Graphene Nonlinear Electrodynamics and Optics of Graphene S. A. Mikhailov and N. A. Savostianova University of Augsburg, Institute of Physics, Universitätsstr. 1, 86159 Augsburg, Germany E-mail: sergey.mikhailov@physik.uni-augsburg.de

More information

Semiconductor Physics and Devices Chapter 3.

Semiconductor Physics and Devices Chapter 3. Introduction to the Quantum Theory of Solids We applied quantum mechanics and Schrödinger s equation to determine the behavior of electrons in a potential. Important findings Semiconductor Physics and

More information

Lecture 21 Reminder/Introduction to Wave Optics

Lecture 21 Reminder/Introduction to Wave Optics Lecture 1 Reminder/Introduction to Wave Optics Program: 1. Maxwell s Equations.. Magnetic induction and electric displacement. 3. Origins of the electric permittivity and magnetic permeability. 4. Wave

More information

NiS - An unusual self-doped, nearly compensated antiferromagnetic metal [Supplemental Material]

NiS - An unusual self-doped, nearly compensated antiferromagnetic metal [Supplemental Material] NiS - An unusual self-doped, nearly compensated antiferromagnetic metal [Supplemental Material] S. K. Panda, I. dasgupta, E. Şaşıoğlu, S. Blügel, and D. D. Sarma Partial DOS, Orbital projected band structure

More information

Carrier Recombination

Carrier Recombination Notes for ECE-606: Spring 013 Carrier Recombination Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu /19/13 1 carrier recombination-generation

More information

Modern Optical Spectroscopy

Modern Optical Spectroscopy Modern Optical Spectroscopy With Exercises and Examples from Biophysics and Biochemistry von William W Parson 1. Auflage Springer-Verlag Berlin Heidelberg 2006 Verlag C.H. Beck im Internet: www.beck.de

More information

Basic Principles of Light Emission in Semiconductors

Basic Principles of Light Emission in Semiconductors Basic Principles of Light Emission in Semiconductors Class: Integrated Photonic Devices Time: Fri. 8:00am ~ 11:00am. Classroom: 資電 06 Lecturer: Prof. 李明昌 (Ming-Chang Lee) Model for Light Generation and

More information

Solid State Physics Byungwoo Park Department of Materials Science and Engineering Seoul National University

Solid State Physics Byungwoo Park Department of Materials Science and Engineering Seoul National University Solid State Physics Byungwoo Park Department of Materials Science and Engineering Seoul National University http://bp.snu.ac.kr Types of Crystal Binding Kittel, Solid State Physics (Chap. 3) Solid State

More information

Chapter 2 Optical Transitions

Chapter 2 Optical Transitions Chapter 2 Optical Transitions 2.1 Introduction Among energy states, the state with the lowest energy is most stable. Therefore, the electrons in semiconductors tend to stay in low energy states. If they

More information

The Dielectric Function of a Metal ( Jellium )

The Dielectric Function of a Metal ( Jellium ) The Dielectric Function of a Metal ( Jellium ) Total reflection Plasma frequency p (10 15 Hz range) Why are Metals Shiny? An electric field cannot exist inside a metal, because metal electrons follow the

More information

Density of states for electrons and holes. Distribution function. Conduction and valence bands

Density of states for electrons and holes. Distribution function. Conduction and valence bands Intrinsic Semiconductors In the field of semiconductors electrons and holes are usually referred to as free carriers, or simply carriers, because it is these particles which are responsible for carrying

More information

Spins and spin-orbit coupling in semiconductors, metals, and nanostructures

Spins and spin-orbit coupling in semiconductors, metals, and nanostructures B. Halperin Spin lecture 1 Spins and spin-orbit coupling in semiconductors, metals, and nanostructures Behavior of non-equilibrium spin populations. Spin relaxation and spin transport. How does one produce

More information

PHOTOVOLTAICS Fundamentals

PHOTOVOLTAICS Fundamentals PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi

More information

3.23 Electrical, Optical, and Magnetic Properties of Materials

3.23 Electrical, Optical, and Magnetic Properties of Materials MIT OpenCourseWare http://ocw.mit.edu 3.23 Electrical, Optical, and Magnetic Properties of Materials Fall 2007 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.

More information

Spin Dynamics in Single GaAs Nanowires

Spin Dynamics in Single GaAs Nanowires 1 Dr. Max Mustermann Referat Kommunikation & Marketing Verwaltung Spin Dynamics in Single GaAs Nanowires F. Dirnberger, S. Furthmeier, M. Forsch, A. Bayer, J. Hubmann, B. Bauer, J. Zweck, E. Reiger, C.

More information

Calculating Band Structure

Calculating Band Structure Calculating Band Structure Nearly free electron Assume plane wave solution for electrons Weak potential V(x) Brillouin zone edge Tight binding method Electrons in local atomic states (bound states) Interatomic

More information

Supplementary Figure 1

Supplementary Figure 1 Supplementary Figure 1 XRD patterns and TEM image of the SrNbO 3 film grown on LaAlO 3(001) substrate. The film was deposited under oxygen partial pressure of 5 10-6 Torr. (a) θ-2θ scan, where * indicates

More information

Lecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination

Lecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Lecture 8 Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Reading: (Cont d) Notes and Anderson 2 sections 3.4-3.11 Energy Equilibrium Concept Consider a non-uniformly

More information

2A: Absorbing Materials Pt-by-Pt and GenOsc

2A: Absorbing Materials Pt-by-Pt and GenOsc 2014 J.A. Woollam Co., Inc. www.jawoollam.com 1 2A: Absorbing Materials Pt-by-Pt and GenOsc Nina Hong U Penn, February 2014 2014 J.A. Woollam Co., Inc. www.jawoollam.com 2 Pt-by-Pt Fit UV Absorbing Films

More information

OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS. Jin Zhong Zhang. World Scientific TECHNISCHE INFORMATIONSBIBLIOTHEK

OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS. Jin Zhong Zhang. World Scientific TECHNISCHE INFORMATIONSBIBLIOTHEK OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS Jin Zhong Zhang University of California, Santa Cruz, USA TECHNISCHE INFORMATIONSBIBLIOTHEK Y World Scientific NEW JERSEY. t'on.don SINGAPORE «'BEIJING

More information

Chapter 6: Light-Emitting Diodes

Chapter 6: Light-Emitting Diodes Chapter 6: Light-Emitting Diodes Photoluminescence and electroluminescence Basic transitions Luminescence efficiency Light-emitting diodes Internal quantum efficiency External quantum efficiency Device

More information

Fall 2014 Nobby Kobayashi (Based on the notes by E.D.H Green and E.L Allen, SJSU) 1.0 Learning Objectives

Fall 2014 Nobby Kobayashi (Based on the notes by E.D.H Green and E.L Allen, SJSU) 1.0 Learning Objectives University of California at Santa Cruz Electrical Engineering Department EE-145L: Properties of Materials Laboratory Lab 7: Optical Absorption, Photoluminescence Fall 2014 Nobby Kobayashi (Based on the

More information

Direct and Indirect Semiconductor

Direct and Indirect Semiconductor Direct and Indirect Semiconductor Allowed values of energy can be plotted vs. the propagation constant, k. Since the periodicity of most lattices is different in various direction, the E-k diagram must

More information

Physics of Semiconductors (Problems for report)

Physics of Semiconductors (Problems for report) Physics of Semiconductors (Problems for report) Shingo Katsumoto Institute for Solid State Physics, University of Tokyo July, 0 Choose two from the following eight problems and solve them. I. Fundamentals

More information

(002)(110) (004)(220) (222) (112) (211) (202) (200) * * 2θ (degree)

(002)(110) (004)(220) (222) (112) (211) (202) (200) * * 2θ (degree) Supplementary Figures. (002)(110) Tetragonal I4/mcm Intensity (a.u) (004)(220) 10 (112) (211) (202) 20 Supplementary Figure 1. X-ray diffraction (XRD) pattern of the sample. The XRD characterization indicates

More information

Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules

Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules OPTI 500 DEF, Spring 2012, Lecture 2 Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules Energy Levels Every atom or molecule

More information

NONLINEAR TRANSITIONS IN SINGLE, DOUBLE, AND TRIPLE δ-doped GaAs STRUCTURES

NONLINEAR TRANSITIONS IN SINGLE, DOUBLE, AND TRIPLE δ-doped GaAs STRUCTURES NONLINEAR TRANSITIONS IN SINGLE, DOUBLE, AND TRIPLE δ-doped GaAs STRUCTURES E. OZTURK Cumhuriyet University, Faculty of Science, Physics Department, 58140 Sivas-Turkey E-mail: eozturk@cumhuriyet.edu.tr

More information

SOLID STATE PHYSICS. Second Edition. John Wiley & Sons. J. R. Hook H. E. Hall. Department of Physics, University of Manchester

SOLID STATE PHYSICS. Second Edition. John Wiley & Sons. J. R. Hook H. E. Hall. Department of Physics, University of Manchester SOLID STATE PHYSICS Second Edition J. R. Hook H. E. Hall Department of Physics, University of Manchester John Wiley & Sons CHICHESTER NEW YORK BRISBANE TORONTO SINGAPORE Contents Flow diagram Inside front

More information

Solid State Device Fundamentals

Solid State Device Fundamentals Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 The free electron model of metals The free electron model

More information

Electron spins in nonmagnetic semiconductors

Electron spins in nonmagnetic semiconductors Electron spins in nonmagnetic semiconductors Yuichiro K. Kato Institute of Engineering Innovation, The University of Tokyo Physics of non-interacting spins Optical spin injection and detection Spin manipulation

More information

Nanoscience and Molecular Engineering (ChemE 498A) Semiconductor Nano Devices

Nanoscience and Molecular Engineering (ChemE 498A) Semiconductor Nano Devices Homework 7 Dec 9, 1 General Questions: 1 What is the main difference between a metal and a semiconductor or insulator, in terms of band structure? In a metal, the Fermi level (energy that separates full

More information

Plasmonic Photovoltaics Harry A. Atwater California Institute of Technology

Plasmonic Photovoltaics Harry A. Atwater California Institute of Technology Plasmonic Photovoltaics Harry A. Atwater California Institute of Technology Surface plasmon polaritons and localized surface plasmons Plasmon propagation and absorption at metal-semiconductor interfaces

More information

Recombination: Depletion. Auger, and Tunnelling

Recombination: Depletion. Auger, and Tunnelling Recombination: Depletion Region, Bulk, Radiative, Auger, and Tunnelling Ch 140 Lecture Notes #13 Prepared by David Gleason We assume: Review of Depletion Region Recombination Flat Quantum Fermi Levels

More information

André Schleife Department of Materials Science and Engineering

André Schleife Department of Materials Science and Engineering André Schleife Department of Materials Science and Engineering Yesterday you (should have) learned this: http://upload.wikimedia.org/wikipedia/commons/e/ea/ Simple_Harmonic_Motion_Orbit.gif 1. deterministic

More information

Angle-Resolved Two-Photon Photoemission of Mott Insulator

Angle-Resolved Two-Photon Photoemission of Mott Insulator Angle-Resolved Two-Photon Photoemission of Mott Insulator Takami Tohyama Institute for Materials Research (IMR) Tohoku University, Sendai Collaborators IMR: H. Onodera, K. Tsutsui, S. Maekawa H. Onodera

More information

Lecture 18: Semiconductors - continued (Kittel Ch. 8)

Lecture 18: Semiconductors - continued (Kittel Ch. 8) Lecture 18: Semiconductors - continued (Kittel Ch. 8) + a - Donors and acceptors J U,e e J q,e Transport of charge and energy h E J q,e J U,h Physics 460 F 2006 Lect 18 1 Outline More on concentrations

More information

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur

More information

Preface Introduction to the electron liquid

Preface Introduction to the electron liquid Table of Preface page xvii 1 Introduction to the electron liquid 1 1.1 A tale of many electrons 1 1.2 Where the electrons roam: physical realizations of the electron liquid 5 1.2.1 Three dimensions 5 1.2.2

More information

I. Introduction II. Solid State Physics Detection of Light Bernhard Brandl 1

I. Introduction II. Solid State Physics Detection of Light Bernhard Brandl 1 Detection of Light I. Introduction II. Solid State Physics 4-2-2015 Detection of Light Bernhard Brandl 1 4-2-2015 Detection of Light Bernhard Brandl 2 Blabla Recommended 4-2-2015 Detection of Light Bernhard

More information

Carriers Concentration in Semiconductors - V. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Carriers Concentration in Semiconductors - V. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Carriers Concentration in Semiconductors - V 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Motion and Recombination of Electrons and

More information

Neutron Irradiation Effects on Optical Properties of Sm-Doped Lead Borate Glasses

Neutron Irradiation Effects on Optical Properties of Sm-Doped Lead Borate Glasses Neutron Irradiation Effects on Optical Properties of Sm-Doped Lead Borate Glasses S.U. El-kameesy 1, S.Y. El-Zaiat 1, A. Hamid 2 and Y.El-Gamam 1 1 Department of Physics, Faculty of Science, Ain shams

More information

Electron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.

Electron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID. Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION doi:10.1038/nature13734 1. Gate dependence of the negatively charged trion in WS 2 monolayer. We test the trion with both transport and optical measurements. The trion in our system is negatively charged,

More information

Chapter 12: Semiconductors

Chapter 12: Semiconductors Chapter 12: Semiconductors Bardeen & Shottky January 30, 2017 Contents 1 Band Structure 4 2 Charge Carrier Density in Intrinsic Semiconductors. 6 3 Doping of Semiconductors 12 4 Carrier Densities in Doped

More information

Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures Springer Series in Solid-State Sciences 115 Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures Bearbeitet von Jagdeep Shah erweitert 1999. Buch. xvi, 522 S. Hardcover ISBN 978 3

More information

Light Interaction with Small Structures

Light Interaction with Small Structures Light Interaction with Small Structures Molecules Light scattering due to harmonically driven dipole oscillator Nanoparticles Insulators Rayleigh Scattering (blue sky) Semiconductors...Resonance absorption

More information

Plan of the lectures

Plan of the lectures Plan of the lectures 1. Introductory remarks on metallic nanostructures Relevant quantities and typical physical parameters Applications. Linear electron response: Mie theory and generalizations 3. Nonlinear

More information

Index. buried oxide 35, 44 51, 89, 238 buried channel 56

Index. buried oxide 35, 44 51, 89, 238 buried channel 56 Index A acceptor 275 accumulation layer 35, 45, 57 activation energy 157 Auger electron spectroscopy (AES) 90 anode 44, 46, 55 9, 64, 182 anode current 45, 49, 65, 77, 106, 128 anode voltage 45, 52, 65,

More information

Optical properties of single-layer, double-layer, and bulk MoS2

Optical properties of single-layer, double-layer, and bulk MoS2 Optical properties of single-layer, double-layer, and bulk MoS Alejandro Molina-Sánchez, Ludger Wirtz, Davide Sangalli, Andrea Marini, Kerstin Hummer Single-layer semiconductors From graphene to a new

More information

QUANTUM WELLS, WIRES AND DOTS

QUANTUM WELLS, WIRES AND DOTS QUANTUM WELLS, WIRES AND DOTS Theoretical and Computational Physics of Semiconductor Nanostructures Second Edition Paul Harrison The University of Leeds, UK /Cf}\WILEY~ ^INTERSCIENCE JOHN WILEY & SONS,

More information

Chapter 1 Overview of Semiconductor Materials and Physics

Chapter 1 Overview of Semiconductor Materials and Physics Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B

More information

SUPPORTING INFORMATION. Influence of plasmonic Au nanoparticles on the photoactivity of

SUPPORTING INFORMATION. Influence of plasmonic Au nanoparticles on the photoactivity of SUPPORTING INFORMATION Influence of plasmonic Au nanoparticles on the photoactivity of Fe 2 O 3 electrodes for water splitting Elijah Thimsen, Florian Le Formal, Michael Grätzel and Scott C. Warren* Interband

More information

PHYS485 Materials Physics

PHYS485 Materials Physics 5/11/017 PHYS485 Materials Physics Dr. Gregory W. Clar Manchester University LET S GO ON A (TEK)ADVENTURE! WHAT? TRIP TO A MAKER S SPACE IN FORT WAYNE WHEN? THURSDAY, MAY 11 TH @ 5PM WHERE? TEKVENTURE

More information

Optical properties of chalcopyrite-type intermediate transition metal band materials from first principles

Optical properties of chalcopyrite-type intermediate transition metal band materials from first principles Optical properties of chalcopyrite-type intermediate transition metal band materials from first principles I. Aguilera, P. Palacios, P. Wahnon Institute de Energia Solar and Departamiento de Tecnologias

More information

ELEMENTARY BAND THEORY

ELEMENTARY BAND THEORY ELEMENTARY BAND THEORY PHYSICIST Solid state band Valence band, VB Conduction band, CB Fermi energy, E F Bloch orbital, delocalized n-doping p-doping Band gap, E g Direct band gap Indirect band gap Phonon

More information

2 Fundamentals of Flash Lamp Annealing of Shallow Boron-Doped Silicon

2 Fundamentals of Flash Lamp Annealing of Shallow Boron-Doped Silicon 2 Fundamentals of Flash Lamp Annealing of Shallow Boron-Doped Silicon MSA of semiconductors is usually performed using flash lamps. It has been shown that FLA holds the balance between effective dopant

More information

Metal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour

Metal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour Metal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour (Cu) All operate by vaporizing metal in container Helium

More information

II Theory Of Surface Plasmon Resonance (SPR)

II Theory Of Surface Plasmon Resonance (SPR) II Theory Of Surface Plasmon Resonance (SPR) II.1 Maxwell equations and dielectric constant of metals Surface Plasmons Polaritons (SPP) exist at the interface of a dielectric and a metal whose electrons

More information

Lecture 7 Light-Matter Interaction Part 1 Basic excitation and coupling. EECS Winter 2006 Nanophotonics and Nano-scale Fabrication P.C.

Lecture 7 Light-Matter Interaction Part 1 Basic excitation and coupling. EECS Winter 2006 Nanophotonics and Nano-scale Fabrication P.C. Lecture 7 Light-Matter Interaction Part 1 Basic excitation and coupling EECS 598-00 Winter 006 Nanophotonics and Nano-scale Fabrication P.C.Ku What we have learned? Nanophotonics studies the interaction

More information