Nicholas G. Rudawski EDUCATION EXPERIENCE

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1 Nicholas G. Rudawski Department of Materials Science and Engineering University of Florida PO Box Gainesville, FL Phone: (805) EDUCATION Ph.D., Materials Science and Engineering University of Florida, Gainesville, FL Completed: December 19, 2008 Dissertation: Stressed solid-phase epitaxial growth of silicon 3.83 cumulative GPA Electronic materials specialization B.S.E., Materials Science and Engineering University of Michigan, Ann Arbor, MI Completed: April 30, mathematics, science and engineering GPA 3.91 cumulative GPA EXPERIENCE Post-Doctoral Researcher, University of Florida, Gainesville, FL (08/2010 present) Fabrication and characterization of the performance/structure of Li ion battery components; electrochemical testing, focused ion beam processing, scanning electron microscopy, and scanning/conventional transmission electron microscopy of semiconductor nanowire battery cells/materials and novel Li ion battery cells/materials; preparation of research grant proposals; mentoring of graduate, undergraduate, and high school student researchers Post-Doctoral Researcher, University of California, Santa Barbara, CA (08/ /2010) Characterization of the structural and chemical properties of transition metal oxide thin films and III-V metal-oxide-semiconductor capacitor structures; scanning and conventional transmission electron microscopy of transition metal oxide thin films, III-V metal-oxide-semiconductor capacitor structures, and nanoparticle-compound semiconductor composites; focused ion beam processing and local electrode atom probe tomography of transition metal oxide thin films and III-V metal-oxide-semiconductor capacitor structures. Graduate Research Assistant, University of Florida, Gainesville, FL (08/ /2009) Studies of the effect of mechanical stress during thermal processing on the growth, defect structure, and electronic properties of ion-implanted Si; furnace/rapid thermal annealing, focused ion beam processing, scanning electron microscopy, transmission electron microscopy, Hall 1

2 effect, and four-point probe measurements of ion-implanted Si; analysis of GaN-based high electron mobility transistors using focused ion beam processing, transmission electron microscopy, and energy dispersive x-ray spectroscopy; technology computer aided design process simulation; preparation of research grant proposals; mentoring of graduate and undergraduate student researchers. Undergraduate Research Assistant, University of Michigan, Ann Arbor, MI (03/ /2005) Growth and characterization of III-V compound semiconductor thin films and substrates using molecular beam epitaxy, optical absorption spectroscopy, transmission electron microscopy, scanning tunneling microscopy, atomic force microscopy, and x-ray diffraction analysis; mentoring of undergraduate and high school student researchers. 2

3 CONFERENCE PRESENTATIONS 1. P. Whiting, M. Holzworth, L. Lu, N. G. Rudawski, F. Ren, and K. S. Jones, A new degradation mechanism in AlGaN/GaN HEMTs, Materials Research Society Fall Meeting (2010). 2. N. G. Rudawski, Modeling solid-phase epitaxial growth: progress and challenges, (Invited Presentation) IEEE Conference on Advanced Thermal Processing of Semiconductors (2010). 3. P. G. Burke, H. Lu, N. G. Rudawski, J.-H. Bahk, T. Favaloro, A. Ramu, J. Bowers, and A. C. Gossard, Electrical and optical properties of nanoparticle thermoelectric power generation materials, North American Conference on Molecular Beam Epitaxy (2010). 4. Y. Hwang, R. Engel-Herbert, N. G. Rudawski, and S. Stemmer, Fermi level unpinning of HfO 2 /In 0.53 Ga 0.47 As gate stacks using hydrogen anneals, Electrochemical Society Fall Meeting (2010). 5. N. G. Rudawski and K. S. Jones, Stressed solid-phase epitaxial growth of Si and related materials, (Invited Presentation) European Materials Research Society Spring Meeting (2009). 6. S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, Effect of n- and p- type dopants on amorphous regrowth, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (2009). 7. L. Romano, N. G. Rudawski, M. R. Holzworth, K. S. Jones, S. Choi, and S. T. Picraux, Manipulation and deformation of Ge nanowires by ion-irradiation, Materials Research Society Spring Meeting (2009). 8. K. S. Jones, N. G. Rudawski, M. Phen, R. M. Gwilliam, and L. Rubin, The effect of stress on solid phase epitaxial recrystallization, (Invited Presentation) International Conference on Ion-Implantation Technology (2008). 9. N. G. Rudawski, K. S. Jones, and R. Gwilliam, Kinetics of stressed solid-phase epitaxial growth of ion-implanted Si, International Conference on Ion-Implantation Technology (2008). 10. K. S. Jones, N. G. Rudawski, M. Phen, R. Gwilliam, and R. G. Elliman, The effect of stress on ion implantation induced amorphous layer recrystallization, (Invited Presentation) Materials Research Society Spring Meeting (2008). 11. N. G. Rudawski, K. S. Jones, and R. G. Elliman, Influence of As on stressed solid phase epitaxy in patterned Si wafers, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (2007). 3

4 12. S. Morarka, N. G. Rudawski, and M. E. Law, Level set modeling of the orientation dependence of solid phase epitaxial regrowth, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (2007). 13. N. G. Rudawski, K. N. Siebein, and K. S. Jones, Effect of stress on solid phase epitaxy in two-dimensional amorphized Si, Materials Research Society Spring Meeting (2006). 14. H. McKay, M. Reason, X. Weng, N. Rudawski, W. Ye, R.S. Goldman, and V. Rotberg, Nitrogen incorporation in GaAsN films and GaAsN/GaAs superlattices, American Vacuum Society International Symposium (2004). 15. M. Reason, H. McKay, X. Weng, N. Rudawski, W. Ye, R. S. Goldman, and V. Rotberg, Effect of arsenic species and Si-doping on N incorporation in GaAsN films, Electronic Materials Conference (2004). 16. M. Reason, H. McKay, X. Weng, N. Rudawski, and R. S. Goldman, Nitrogen incorporation into dilute GaAsN alloys, European Materials Research Society Spring Meeting (2004). 17. N. G. Rudawski, X. Weng, H. A. McKay, and R. S. Goldman, Imaging the evolution of GaAsN film growth, Materials Research Society Fall Meeting (2004). 18. X. Weng, N. G. Rudawski, D. L. Partin, J. Heremans, and R. S. Goldman, Effects of film/buffer interfaces on the structural and electronic properties of InSb films, Materials Research Society Fall Meeting (2003). 19. X. Weng, N. G. Rudawski, R. S. Goldman, D. L. Partin, and J. Heremans, Effects of InAlSb buffer layers on the structural and electronic properties of InSb films, American Vacuum Society International Symposium (2003). PEER-REVIEWED PUBLICATIONS 1. B. R. Yates, B. L. Darby, N. G. Rudawski, K. S. Jones, D. H. Petersen. O. Hansen, R. Lin, P. F. Nielsen, and A. Kontos, Anomalous activation of shallow B + implants in Ge, Mater. Lett., in press (2011). 2. S. Morarka, S. Jin, N. G. Rudawski, K. S. Jones, M. E. Law, and R. G. Elliman, Interface stability in stressed solid-phase epitaxial growth, J. Vac. Sci. Technol. B, in press (2011). 3. B. L. Darby, B. R. Yates, N. G. Rudawski, K. S. Jones, A. Kontos, and R. G. Elliman, New insights into void formation in Ge, Thin Solid Films 519, 5962 (2011). 4. M. R. Holzworth, N. G. Rudawski, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, and J. W. Johnson, Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor, Appl. Phys. Lett. 98, (2011). 4

5 5. P. G. Burke, H. Lu, N. G. Rudawski, S. Stemmer, J.-H. Bahk, J. Bowers, and A. C. Gossard, Electrical conductivity of Er-doped In 0.53 Ga 0.47 As, J. Vac. Sci. Technol. B 29, 03C117 (2011). 6. B. L. Darby, B. R. Yates, N. G. Rudawski, K. S. Jones, and A. Kontos, Self-implantation energy and dose effects on Ge solid-phase epitaxial growth, Nucl. Instrum. Methods Phys. Res. B 269, 20 (2011). 7. Y. Hwang, R. Engel-Herbert, N. G. Rudawski, and S. Stemmer, Effect of postdeposition anneals on the fermi level response of HfO 2 /In 0.53 Ga 0.47 As gate stacks, J. Appl. Phys. 108, (2010). 8. Y. Hwang, R. Engel-Herbert, N. G. Rudawski, and S. Stemmer, Analysis of trap state densities at HfO 2 /In 0.53 Ga 0.47 As interfaces, Appl. Phys. Lett. 96, (2010). 9. S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, Effect of n- and p-type dopants on patterned amorphous regrowth, J. Vac. Sci. Technol. B 28, C1F1 (2010). 10. L. Romano, N. G. Rudawski, M. R. Holzworth, K. S. Jones, S. Choi, and S. T. Picraux, Nanoscale manipulation of Ge nanowires by ion-irradiation, J. Appl. Phys. 106, (2009). 11. N. G. Rudawski, L. R. Whidden, V. Craciun, and K. S. Jones, Amorphization and solidphase epitaxial growth in C-cluster ion-implanted Si, J. Electron. Mater. 38, 1926 (2009). 12. N. G. Rudawski and K. S. Jones, Atomistic considerations of stressed epitaxial growth from the solid phase, Scripta Mater. 61, 327 (2009). 13. N. G. Rudawski, K. S. Jones, S. Morarka, M. E. Law, and R. G. Elliman, Stressed multidirectional solid-phase epitaxial growth of Si, (Invited Paper) J. Appl. Phys. 105, (2009). 14. S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, Modeling twodimensional solid-phase epitaxial regrowth using level set methods, J. Appl. Phys. 105, (2009). 15. N. G. Rudawski, K. S. Jones, and R. Gwilliam, Stressed solid-phase epitaxial growth of (011) Si, J. Mater. Res. 24, 305 (2009). 16. N. G. Rudawski, K. S. Jones, and R. Gwilliam, Dopant-stress synergy in Si solid-phase epitaxy, Appl. Phys. Lett. 92, (2008). 17. N. G. Rudawski, K. S. Jones, and R. Gwilliam, Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon, (Invited Paper) Mater. Sci. Eng. R 61, 40 (2008). 5

6 18. N. G. Rudawski, K. S. Jones, and R. Gwilliam, Kinetics and morphological instabilities of stressed solid-solid phase transformations, Phys. Rev. Lett. 100, (2008). 19. N. G. Rudawski, K. S. Jones, and R. G. Elliman, The influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers, J. Vac. Sci. Technol. B 26, 435 (2008). 20. S. Morarka, N. G. Rudawski, and M. E. Law, Level set modeling of the orientation dependence of solid phase epitaxial regrowth, J. Vac. Sci. Technol. B 26, 357 (2008). 21. N. G. Rudawski, K. S. Jones, and R. Gwilliam, Solid phase epitaxy in uniaxially-stressed (001) Si, Appl. Phys. Lett. 91, (2007). 22. M. Reason, N. G. Rudawski, H. A. McKay, X. Weng, W. Ye, and R. S. Goldman, Mechanisms of GaAsN growth: surface and step-edge diffusion, J. Appl. Phys. 101, (2007). 23. N. Burbure, N. G. Rudawski, and K. S. Jones, Effect of oxide on trench edge defect formation in ion-implanted silicon, Electrochem. Solid-State Lett. 10, H184 (2007). 24. N. G. Rudawski, K. N. Siebein, and K. S. Jones, Effect of uniaxial stress on solid phase epitaxy in patterned Si wafers, Appl. Phys. Lett. 89, (2006). 25. X. Weng, N. G. Rudawski, P. T. Wang, R. S. Goldman, D. L. Partin, and J. Heremans, Effects of buffer layers on the structural and electronic properties of InSb films, J. Appl. Phys. 97, (2005). BOOK CHAPTERS 1. K. S. Jones, L. Romano, N. G. Rudawski, J. Gyulai, and P. Petrik, Radiation damage of silicon, Ion-Implantation Technology (Ion-Implantation Technology Co., Chester, 2010). 2. K. S. Jones, N. G. Rudawski, L. Romano, and J. Gyulai, Annealing of radiation damage in silicon, Ion-Implantation Technology (Ion-Implantation Technology Co., Chester, 2010). 3. K. S. Jones, L. Romano, N. G. Rudawski, J. Gyulai, and P. Petrik, Radiation damage of silicon, Ion-Implantation Technology (Ion-Implantation Technology Co., Chester, 2008). 4. K. S. Jones, N. G. Rudawski, L. Romano, and J. Gyulai, Annealing of radiation damage in silicon, Ion-Implantation Technology (Ion-Implantation Technology Co., Chester, 2008). 6

7 HONORS AND AWARDS 1. International Conference on Ion-Implantation Technology Best Student Presentation Award (06/2008) 2. University of Florida Named Presidential Graduate Fellow (08/ /2009) 3. Brian Worth Prize Recipient (04/2005) Awarded to a graduating senior in the Department of Materials Science and Engineering at the University of Michigan for demonstrated academic excellence and significant involvement in research during his/her undergraduate career. 4. Andrew A. Kucher Award Recipient (02/2004) Awarded to a graduating senior at the University of Michigan for outstanding contributions to the engineering research community. 5. Intel Undergraduate Research Competition Finalist (06/2003) National undergraduate research competition finalist; research grant awarded to conduct proposed research project, experiment and results presented before a panel of judges in March, 2004; proposal entitled: Scanning tunneling microscopy of GaAsN thin films. 6. Alpha Sigma Mu Engineering Honors Society (03/2003 present) Membership granted for academic excellence in materials science and engineering; membership responsibilities include mentoring and tutoring beginning materials science and engineering students and presenting the field of materials science and engineering to prospective students. 7

8 LABORATORY TRAINING Sputter deposition of thin films Battery cell fabrication and testing Scanning/conventional transmission electron microscopy analysis and sample preparation Focused ion beam processing Energy dispersive x-ray spectroscopy Scanning electron microscopy Atom probe tomography analysis and sample preparation Electron beam lithography X-ray diffraction analysis Scanning tunneling microscopy Atomic force microscopy Molecular beam epitaxy Rapid thermal annealing Tube furnace annealing Optical absorption spectroscopy measurements SOFTWARE TRAINING C++ programming language MATLAB, Maple, and Mathematica KaleidaGraph Adobe Photoshop Microsoft Word, Excel and Power Point Florida object-oriented process simulator (CMOS process simulator) AutoSTEM (transmission electron microscopy image simulator) EXPERIENCE WORKING IN SPECIALIZED ENVIRONMENTS Extensive experience working in glovebox and cleanroom environments Extensive use of acids, bases, and other hazardous chemicals/materials 8

9 REFERENCES Prof. Kevin S. Jones Department of Materials Science and Engineering University of Florida Gainesville, FL Phone: (352) Prof. Mark E. Law Department of Electrical and Computer Engineering University of Florida Gainesville, FL Phone: (352) Dr. Robert R. Robison International Business Machines, Inc. Essex Junction, VT Phone: (802) Prof. Rachel S. Goldman Department of Materials Science and Engineering University of Michigan Ann Arbor, MI Phone: (734)