CURRICULUM VITAE HUAMIN LI UPDATED: DECEMBER 1, 2015 MAIN RESEARCH INTERESTS EDUCATION

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1 CURRICULUM VITAE HUAMIN LI UPDATED: DECEMBER 1, 2015 Postdoctoral Research Associate Center for Low Energy Systems Technology (LEAST), Department of Electrical Engineering University of Notre Dame, B20 Stinson-Remick Hall (office), 275 Fitzpatrick Hall (mail) Notre Dame, Indiana 46556, USA Phone: (574) Mobile: (574) MAIN RESEARCH INTERESTS Solid-State Electronic Devices Field-effect transistors and tunnel transistors based on low-dimensional materials, including carbon nanotubes (CNTs), graphene, hexagonal boron nitride (h-bn), transition metal dichalcogenides (TMDs), and their van der Waals hetero-structures and hybrid systems. Non-volatile flash memories. Deep level transient spectroscopy (DLTS) on high-k materials. Optoelectronic Devices Photodetectors and photovoltaics based on low-dimensional materials and their van der Waals hetero-structures and hybrid systems. Silicon-based solar cells. Localized surface plasmon resonance (LSPR) and finite-difference time-domain (FDTD) simulation. EDUCATION Mar Mar Ph.D. in Nano Science and Technology Department of Nano Science and Technology Sungkyunkwan University (SKKU), Korea Dissertation title: High photocurrent generation in silicon- and graphene-based optoelectronic devices (Major advisor: Prof. Yoo, Won Jong) Sep Mar M.S. in Mechanical Engineering School of Mechanical Engineering, College of Engineering Sungkyunkwan University (SKKU), Korea Dissertation title: Frequency and temperature reliabilities of flexible PCB substrate for advanced packaging application (Major advisor: Prof. Yoo, Won Jong) Sep Sep B.S. in Physics College of Physics and Electronics Shandong Normal University, Jinan, China Page 1 of 5

2 RESEARCH EXPERIENCE Apr Present Postdoctoral Research Associate Center for Low Energy Systems Technology (LEAST) Department of Electrical Engineering, University of Notre Dame, USA o Developed low-voltage and steep subthreshold swing (SS) components for beyond-cmos electronic systems using low-dimensional materials, and explored new concepts for energy-efficient devices to reduce power in electronic systems. o Demonstrated the world s thinnest (3 nm) MoS2 p-n homojunction, and investigated its carrier transport and photoresponse. Mar Apr Postdoctoral Researcher o Proposed a gate-controlled Schottky barrier modulation for superior photoresponse of TMD FETs composed of MoS2 and WSe2. o Proposed a trap-assisted technique for high photocurrent and quantum efficiency in single-layer graphene FET photodetector. Mar Mar Major Research towards Ph.D. o Proposed an application of high-k materials, e.g., Si3N4, ZrO2, and HfO2 to the LSPR excited by Au nanoparticle structure for silicon-based thin film solar cells. Analyzed the enhanced light absorption using Mie theory and FDTD simulation. o Investigated the radial-junction Si nanohole (SiNH) and Si nanowire (SiNW) surface texture for solar cells. Proposed a design principle in terms of various structural parameters via a computational simulation for high efficiency radial-junction solar cells. o Proposed a graphene stack structure assembled by layer-by-layer transfer of single layer graphene for high photocurrent and quantum efficiency in graphene photodetectors. Sep Mar Major Research towards M.S. o Established the modeling and simulation of silicon-oxide-nitride-oxide-silicon (SONOS) flash memory in both fresh and programmed states using a parallel capacitor model. Proposed a comprehensive analysis of various electrical properties, contributing to the control of the write/erase operation, the optimization of the device structure, and the characteristics of the retention properties in SONOS flash memory. o Investigated high-k dielectrics, e.g., Al2O3, HfO2 and ZrO2 etc. for electronic device application. Investigated both bulk and interfacial trap properties by DLTS. Page 2 of 5

3 KEY RESEARCH SKILLS Analysis of material properties using microscopy, spectroscopy and metrology, including Raman spectroscopy, UV-Vis spectroscopy, atomic force microscopy (AFM) etc. Device fabrication using micro- and nano-electro-mechanical system (MEMS/NEMS) process, including photolithography, electron beam lithography, atomic layer deposition (ALD), chemical vapor deposition (CVD), sputter, evaporator, plasma etcher etc. Experimental characterization of electronic and optoelectronic devices, including diodes, FETs, tunnel FETs, memories, photodetectors and solar cells etc. Theoretical modeling of solid state electronics and optoelectronics, and simulation of LSPR using Mie theory and 3D FDTD. ACADEMIC AWARDS Mar Outstanding graduate student award by and Department of Nano Science and Technology, Sungkyunkwan University (SKKU), Korea. Jan Chinese government award for outstanding self-financed students abroad by China Scholarship Council. Jul The best poster award in the 3rd International Conference on Microelectronics and Plasma Technology, in Dalian, China, organized by the Korean Vacuum Society etc. CONFERENCE PROCEEDINGS (SELECTED) [5] H.-M. Li, D.-Y. Lee, M.-S. Choi, D.-S. Qu, X.-C. Liu, C.-H. Ra, and W. J. Yoo, Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor, in IEEE International Electron Devices Meeting Tech. Dig., pp , Dec (oral presentation). [4] H.-M. Li, T.-Z. Shen, D.-Y. Lee, and W. J. Yoo, High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance, in IEEE International Electron Devices Meeting Tech. Dig., pp , Dec (oral presentation). [3] H.-M. Li, D.-Y. Lee, Y.-D. Lim, C. Yang, G. Zhang, H. J. Kim, S. N. Cha, J. M. Kim, and W. J. Yoo, High efficiency radial-junction Si nanohole solar cells formed by self-assembling high aspect ratio plasma etching, in IEEE International Electron Devices Meeting Tech. Dig., pp , Dec (oral presentation). [2] G. Zhang, T.-Z. Shen, H.-M. Li, D.-Y. Lee, C.-H. Ra, and W. J. Yoo, Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access, in IEEE International Electron Devices Meeting Tech. Dig., pp , Dec Page 3 of 5

4 [1] G. Zhang, C. H. Ra, H.-M. Li, C. Yang, and W. J. Yoo, Potential well engineering by partial oxidation of TiN for high-speed and low-voltage flash memory with good 125ºC data retention and excellent endurance, in IEEE International Electron Devices Meeting Tech. Dig., pp , Dec JOURNAL PUBLICATIONS [12] H.-M. Li, D. Lee, D. Qu, X. Liu, J. Ryu, A. Seabaugh, and W. J. Yoo, Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide, Nat. Commun., vol. 6, no. 6564, Mar [11] H.-M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors, Sci. Rep., vol. 4, no. 4041, Feb [10] H.-M. Li, D.-Y. Lee, and W. J. Yoo, Optoelectronic performance of radial-junction Si nanopillar and nanohole solar cells, IEEE Trans. Electron Devices, vol. 59, no. 9, pp , Sep [9] H.-M. Li, G. Zhang, and W. J. Yoo, Estimation of trapped charge density in SONOS flash memory using a parallel capacitor model, IEEE Trans. Electron Devices, vol. 58, no. 10, pp , Oct [8] H.-M. Li, G. Zhang, C. Yang, D.-Y. Lee, Y.-D. Lim, T.-Z. Shen, W. J. Yoo, Y. J. Park, H. J. Kim, S. N. Cha, and J. M. Kim, Enhancement of light absorption using high-k dielectric in localized surface plasmon resonance for silicon-based thin film solar cells, J. Appl. Phys., vol. 109, no , May [7] H.-M. Li, G. Zhang, and W. J. Yoo, Deep level transient spectroscopy on charge traps in high-k ZrO2, Thin Solid Films, vol. 518, pp , Apr [6] H.-M. Li, C.-H. Ra, G. Zhang, W. J. Yoo, K.-W. Lee, and J.-D. Kim, Frequency and temperature dependence of the dielectric properties of a PCB substrate for advanced packaging applications, J. Korean Phys. Soc., vol. 54, no. 3, pp , Mar [5] G. Zhang, C. H. Ra, H.-M. Li, T.-Z. Shen, B.-K. Cheong, and W. J. Yoo, Modified potential well formed by Si/SiO2/TiN/TiO2/SiO2/TaN for flash memory application, IEEE Trans. Electron Devices, vol. 57, no. 11, pp , Nov [4] G. Zhang, S.-H. Lee, C. H. Ra, H.-M. Li, and W. J. Yoo, Second-bit-effect-free multibit-cell flash memory using Si3N4/ZrO2 split charge trapping layer, IEEE Trans. Electron Devices, vol. 56, no. 9, pp , Sep [3] D.-Y. Lee, H. J. Kim, H.-M. Li, A.-R. Jang, Y.-D. Lim, S. N. Cha, Y. J. Park, D. J. Kang, and W. J. Yoo, Hybrid energy harvester based on nanopillar solar cells and PVDF nanogenerator, Nanotechnology, vol. 24, no , Apr [2] C. Yang, G. Zhang, D.-Y. Lee, H.-M. Li, Y.-D. Lim, W. J. Yoo, Y.-J. Park, and J.-M. Kim, Self-assembled wire arrays and ITO contacts for silicon nanowire solar cell applications, Chin. Phys. Lett., vol. 28, no , Mar Page 4 of 5

5 [1] C. Yang, G. Zhang, H.-M. Li, and W. J. Yoo, Localized surface plasmon resonances caused by Ag nanoparticles on SiN for solar cell applications, J. Korean Phys. Soc., vol. 56, no. 5, pp , May BOOK CHAPTERS H.-M. Li and W. J. Yoo, Photonic properties of graphene device, in Two Dimensional Carbon: Fundamental properties, synthesis, characterization, and applications, published by Pan Stanford Publishing Pte Ltd, PATENTS [5] C.-J. Ryu, T.-Z. Shen, W. J. Yoo, H.-M. Li, M.-S. Choi, and J.-Y. Choi, Two-dimensional materials stacked flexible photosensor, US (United States of America) , [4] S.-M. Kim, S.-N. Cha, W. J. Yoo, D.-Y. Lee, and H.-M. Li, Surface plasmon generating device, method of fabricating the same, and optical device employing the surface plasmon generating device, KR (Republic of Korea) , [3] S.-M. Kim, S.-N. Cha, H.-M. Li, and W. J. Yoo, Photoelectric device and method of manufacturing the same, KR (Republic of Korea) , [2] Y.-J. Park, J.-M. Kim, H.-M. Li, and W. J. Yoo, Anti-reflection element using surface plasmon and high-k dielectric and method of manufacturing the same, US (United States of America) , and KR (Republic of Korea) , [1] Y.-J. Park, J.-M. Kim, H.-M. Li, and W. J. Yoo, Solar cell having absorption wavelength shift means of incident light, KR (Republic of Korea) , JOURNAL REVIEWER Nano Letters (1), ACS Nano (1), Physica Status Solidi B (1). MEMBERSHIP IN PROFESSIONAL SOCIETIES Nov Present Member of Institute of Electrical and Electronics Engineers (IEEE) Nov Present Member of IEEE Electron Devices Society (EDS) Jan Present Member of IEEE Young Professionals Nov Present Member of American Physical Society (APS) Nov Present Member of IEEE Nanotechnology Page 5 of 5