Supporting Information. InGaAs Nanomembrane/Si van der Waals Heterojunction. Photodiodes with Broadband and High Photoresponsivity

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1 Supporting Information InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity Doo-Seung Um, Youngsu Lee, Seongdong Lim, Jonghwa Park, Wen-Chun Yen, Yu-Lun Chueh, Hyung-jun Kim, and Hyunhyub Ko * School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan , Korea Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul , Korea hyunhko@unist.ac.kr S-1

2 a) InAs In 0.53 Ga 0.47 As b) In 0.52 Al 0.48 As 20 nm 5 nm RMS = 0.55 nm 1 µm Figure S1. (a) Cross-sectional HRTEM image of the interface region between the InGaAs and InAlAs layers in the as-grown sample. (b) AFM image for a surface roughness analysis of the as-grown InGaAs sample. S-2

3 a) b) Counts (a.u.) 80.0k 60.0k 40.0k 20.0k In As Ga Si O Intensity (a.u.) InAs GaAs Si AlAs InGaAs/Si Etching time (min) InGaAs/InAlAs/InP Raman shift (cm -1 ) Figure S2. (a) Nano-Auger depth profile of the InGaAs/Si heterojunction. (b) Raman shift of the InGaAs/Si heterojunction before (red line) and after (black line) transfer printing. S-3

4 a) b) E vac E vac χ Si ~4.05 ev SiO 2 χ InGaAs SiO 2 ~4.5 ev p-si ΔE c E c ~1.12 ev ~0.45 ev E c ΔE v n + -InGaAs E f ~0.08 ev E f ~0.75 ev E v E v Figure S3. Band diagrams of the n + -InGaAs/p-Si heterojunction device (a) after and (b) before the native oxide layer was removed. The native SiO2 layer was removed by HF treatment. S-4

5 a) b) c) d) Figure S4. (a, b) Bright and dark field images after heterointegration with imperfectly cleaned InGaAs layer and Si substrate. (c, d) Bright and dark field images after heterointegration with impeccably cleaned InGaAs layer and Si substrate. S-5

6 a) b) Native Si wafer 0 Anode Current (na)(a.u.) HF treated Si wafer Anode Voltage (V) Figure S5. (a) Dark currents and (b) photocurrents under white light illumination for the InGaAs/Si heterojunction photodetector. The red line is the dark current and photocurrent of the heterojunction device integrated with InGaAs and a native Si substrate without HF treatment. The blue line is the dark current and photocurrent of the heterojunction device integrated with InGaAs and a HF-treated Si substrate to remove the native SiO2 layer. Anode Current ( A)(a.u.) HF treated Si wafer Anode Voltage (V) Native Si wafer S-6

7 Current Density (a.u.) Bias Voltage On Under 750 nm Time (s) Off ms ms Figure S6. Enlarged current response time at zero bias (0 V) and under 750 nm (48 µw) light illumination. S-7

8 EQE (%) Wavelength (nm) Figure S7. External quantum efficiency of the InGaAs/Si heterojunction photodiode. S-8

9 Table S1. Electrical and optical performances of Si-based heterojunction photodetectors for broadband photodetection. Type Process method Ideality factor Rectification Ratio Dark Current Photoresponsivity Spectral response Ref. InGaAs/Si (PN) epitaxial transfer 1.54 ±3V ma/cm - 3V nm 400 nm~1250 nm This work InGaAs/Si (APD) wafer bonding 16 ma/cm -5V nm (1) p-ingaas (MSM) wafer bonding 1V > nm (2) InGaAs/Si (APD) wafer bonding 0.7 ma/cm gain of nm (3) Strained Ge/Si (PIN) direct growth 1.1 ±2V 0.22 ma/cm -2V nm 650 nm~1605 nm (4) Ge/SiGe/Si (PIN) direct growth 21 ma/cm -1V nm (5) Ge/Si (PN) direct growth 30 ma/cm ~ - 5V 1000 nm~1750 nm (6) Graphene/Si (Schottky) CVD < 1 µa/cm ma/w 400 nm~900 nm (7) MoS 2 /Si (PN) Exfoliation and transfer ma/w 450 nm~1050 nm (8) S-9

10 REFERENCES (1) Bitter, M.; Z. Pan,; Kristjansson, S.; Boman, L.; Gold, R.; Pauchard, A. InGaAs-on-Si Photodetectors for High-Sensitivity Detection. Proc. SPIE 5406, Infrared Technology and Applications XXX, 2004, (2) Y. Cheng,; Ikku, Y.; Ichikawa, O.; Osada, T.; Hata, M.; Takenaka, M.; Takagi, S. Waveguide InGaAs MSM Photodetector for Chip-Scale Optical Interconnects on III- V CMOS Photonics Platform. Asia Communications and Photonics Conference, (Beijing, China) 2013, ATh3A.4. (3) Pauchard, A.; Mages, P.; Kang, Y.; Bitter, M.; Pan, Z.; Sengupta, D.; Hummel, S.; Lo, Y.-H.; Paul, K. Wafer-Bonded InGaAs/Silicon Avalanche Photodiodes. Proc. SPIE 4650, Photodetector Materials and Devices VII, (San Jose, CA, USA) 2002, 4650, (4) Liu, J.; Michel, J.; Giziewicz, W.; Pan, D.; Wada, K.; Cannon, D. D.; Jongthammanurak, S.; Danielson, D. T.; Kimerling, L. C.; Chen, J. Highperformance, Tensile-Strained Ge p-i-n Photodetectors on a Si Platform. Appl. Phys. Lett. 2005, 87, (5) Loh, T.; Nguyen, H.; Murthy, R.; Yu, M.; Loh, W.; Lo, G.; Balasubramanian, N.; Kwong, D.; Wang, J.; Lee, S. Selective Epitaxial Germanium on Silicon-on-Insulator High Speed Photodetectors Using Low-Temperature Ultrathin Si0.8Ge0.2 Buffer. Appl. Phys. Lett. 2007, 91, (6) Colace, L.; Masini, G.; Assanto, G.; Luan, H.-C.; Wada, K.; Kimerling, L. Efficient High-Speed Near-Infrared Ge Photodetectors Integrated on Si substrates. Appl. Phys. Lett. 2000, 76, (7) An, X.; Liu, F.; Jung, Y. J.; Kar, S. Tunable Graphene-Silicon Heterojunctions for Ultrasensitive Photodetection. Nano. Lett. 2013, 13, S-10

11 (8) Wang, L.; Jie, J.; Shao, Z.; Zhang, Q.; Zhang, X.; Wang, Y.; Sun, Z.; Lee, S.-T. MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors. Adv. Funct. Mater. 2015, 25, S-11