TVS Diode Arrays (SPA Diodes) SP05 Series - 30pF 30kV Unidirectional TVS Array. General Purpose ESD Protection - SP05 Series.
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1 TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series S05 Series - 30pF 30kV Unidiretional TVS rray RoHS b GREE esription This surfae mount family of arrays suppresses ES and other transient overvoltage events. Used to meet the International Eletrotehnial Compatibility (IEC transient immunity standards IEC for Eletrostati isharge Requirements), these devies an help protet sensitive digital or analog input iruits on data, signal, or ontrol lines with voltage levels up to 5VC. inout S0502HTG S0502JTG 2 3 S0505HTG S0505JTG S0503HTG S0506TG S0504HTG S0504JTG The monolithi silion arrays are omprised of speially designed strutures for transient voltage suppression (TVS). The size and shape of these strutures have be tailored for transient protetion. The low apaitane and lamp voltage are ideal for high speed signal line protetion. Features n rray of 2, 3, 4, 5 or 6 TVS valanhe iodes in a ultra small SC70, SOT-23, SOT-43 or SO pakages ES Capability Standards - IEC , iret isharge... 30kV (Level 4) - IEC , ir isharge... 30kV (Level 4) - IL ST kV Input rotetion for ppliations Up to 5VC Fast Response Time...<ns Low Input Capaitane...30pF Typial Operating Temperature Range...-55ºC to 25ºC 2 5 ppliations obile phone handsets ersonal igital ssistants () ortable handheld equipment (Laptop, almtop omputers) Computer port, keyboard (US.) igital still ameras igital video ameras 3 players dditional Information atasheet Resoures Samples Life Support ote: ot Intended for Use in Life Support or Life Saving ppliations The produts shown herein are not designed for use in life sustaining or life saving appliations unless otherwise expressly indiated.
2 iode Capaitane (pf) TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series bsolute aximum Ratings arameter Rating Units Storage Temperature Range 55 to 50 ºC akage ower issipation SC70 SOT23-3, SOT23-5, SOT23-6, SOT43 SO W W W Eletrial Charateristis T = +25ºC, Unless Otherwise Speified arameter Test Conditions in Typ ax Units Reverse Standoff Voltage I R μ V Reverse Standoff Leakage Current V = 5.0V 00 n Signal Clamp Voltage ositive I = m V egative I = 0m V Clamp Voltage during ES IL-ST-883 ethod 305 (H) test + 8kV 2 V - 8kV -8 V ES Test Level () IEC , Contat disharge 30 kv IL-ST-883 ethod 305 (H) 30 kv Capaitane Hz 30 pf Turn on/off Time < ns Temperature Range Operating ºC Storage ºC iode ynami Resistane Forward Condution.0 Ω Reverse Condution.4 Ω ote: () ES voltage applied between hannel pins and ground, one pin at a time; all other hannel pins are open; all ground pins are grounded. Typial iode Capaitane vs. Reverse Voltage iode Reverse Voltage (V)
3 Temperature TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series Soldering arameters Reflow Condition b Free assembly - Temperature in (T s(min) ) 50 C re Heat - Temperature ax (T s(max) ) 200 C - Time (min to max) (t s ) ses verage ramp up rate (Liquidus) Temp (T L ) to peak 5 C/seond max T S(max) to T L - Ramp-up Rate 5 C/seond max Reflow - Temperature (T L ) (Liquidus) 27 C - Temperature (t L ) seonds eak Temperature (T ) /-5 C Time within 5 C of atual peak Temperature (t p ) seonds Ramp-down Rate 5 C/seond max T T L T S(max) T S(min) 25 t S reheat Ramp-up time to peak temperature t t L Ramp-down Time Critial Zone TL to T Time 25 C to peak Temperature (T ) 8 minutes ax. o not exeed 260 C akage imensions SOT43 E e e E E b2 b L S0503HTG - SOT (.34") 3.60 (.40") Reommended ad Layout 0.80 (.032").00 (.040") 2.20 (.087") REF.00 (.040").20 (.048") 0.80 (.032").00 (.040") (.34") (.087") 3.60 (.40").40 (.055") REF.90 (.075").70 (.067") 0.80 (.032").00 (.040") akage SOT43-4 ins 4 JEEC TO (.055") (.075") b.70 (.067") b E E e.92 SC SC e 0.20 SC SC L L REF REF.00 (.040") 0.80 (.032").20 (.048").00 (.040") L
4 TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series akage imensions SC70 C e e E HE 2 L S0502JTG - SC70-3 akage SC70-3 ins 3 JEEC O E e 0.66 SC SC HE L e e E HE 2 S0504JTG - SC70-5 akage SC70-5 ins 5 JEEC O EO e 0.65 SC SC HE L e e L E HE 2 L T S0505JTG - SC70-6 Reommended ad Layout O (REF) R (REF) S (REF) (REF) akage SC70-6 ins 6 JEEC O E e 0.65 SC SC O HE L O R S T
5 TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series akage imensions SOT23 C b e e e e E E L E E L S0502HTG - SOT23-3 Reommended ad Layout 0 S0504HTG - SOT23-5 Reommended ad Layout O 0 akage SOT23-3 ins 3 JEEC TO b E E e 0.95 SC SC e.90 SC SC L 0.54 REF 0.02 REF O TY TY akage SOT23-5 ins 5 JEEC O b E E O e 0.95 SC SC e.90 SC SC L 0.60 REF REF O TY TY e e b E L E S0505HTG - SOT23-6 Reommended ad Layout O akage SOT23-6 ins 6 JEEC O b O E E e 0.95 SC SC e.90 SC SC L 0.60 REF REF O TY TY
6 TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series akage imensions SO E LF 506 L E C L2 S0506TG - SO-8 Reommended ad Layout H G F F I akage SO ins 8 JEEC O-87 G H E F F E I TY TY C TY TY L L2-0.8TY -.007TY F F G H I art umbering System rodut Charateristis TVS iode rrays (S iodes) S0502 *** TG lank = OT Green/RoHS/Lead Free* G= Green/RoHS/Lead Free rodut Lead lating Lead aterial G Green version - atte Tin (Sn) Copper / Iron lloy T= Tape & Reel akage Series = SO-8 H = SOT23-3, -5, -6 or SOT43-4 J = SC70-3, -5 or -6 umber of Channels 02 = 2 hannel (SC70-3, SOT23 pakages) 03 = 3 hannel (SOT43 pakage) 04 = 4 hannel (SC70-5, SOT23-5 pakage) 05 = 5 hannel (SC70-6, SOT23-6 pakages) 06 = 6 hannel (SO-8 pakage) Ordering Information *OTE: To order O-Green/RoHS/Lead Free version of produt, remove G at the end of part number. art umber CH akage Type Quantity er Reel S0502HTG 2 SOT S0503HTG 3 SOT S0504HTG 4 SOT S0505HTG 5 SOT S0506TG 6 SO S0502JTG 2 SC S0504JTG 4 SC S0505JTG 5 SC Lead Coplanarity inhes (0.02mm) Substitute aterial Silion ody aterial olded Epoxy Flammability UL 94 V-0 otes:. ll dimensions are in millimeters. 2. imensions inlude solder plating. 3. imensions are exlusive of mold flash & metal burr. 4. lo is faing up for mold and faing down for trim/form, i.e. reverse trim/form. 5. akage surfae matte finish VI -3.
7 TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series Embossed Carrier Tape & Reel Speifiation SOT23-3 CCESS HOLE 4.4mm 3mm 80mm 60mm 8mm TE REEL GEERL IFORTIO IECES ER REEL. 2. ORER I ULTILES OF FULL REELS OLY. 3. EETS EI-48 REVISIO "" SECIFICTIOS. SOT23-3 (8mm OCKET ITCH) E F W t mm USER IRECTIO OF FEE I Embossed Carrier Tape & Reel Speifiation SOT23-5 CCESS HOLE 4.4mm 3mm 80mm 60mm 8mm TE REEL COVER TE GEERL IFORTIO IECES ER REEL. 2. ORER I ULTILES OF FULL REELS OLY. 3. EETS EI-48 REVISIO "" SECIFICTIOS. SOT23-5 (8mm OCKET ITCH) USER IRECTIO OF FEE I E F W t mm Embossed Carrier Tape & Reel Speifiation SOT23-6 CCESS HOLE 4.4mm 3mm 80mm 60mm 8.4mm 8mm TE REEL GEERL IFORTIO IECES ER REEL. 2. ORER I ULTILES OF FULL REELS OLY. 3. EETS EI-48 REVISIO "" SECIFICTIOS. COVER TE SOT23-6 (8mm OCKET ITCH) USER IRECTIO OF FEE I E F W t
8 TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series Embossed Carrier Tape & Reel Speifiation SOT C d E F W in User Feeding iretion Embossed Carrier Tape & Reel Speifiation SO-8 User Feeding iretion E F in in W K t 0.30 ± ± in Loation Embossed Carrier Tape & Reel Speifiation SC70-3 User Feeding iretion E F W t 0.27 ax 0.00 ax
9 TVS iode rrays (S iodes) General urpose ES rotetion - S05 Series Embossed Carrier Tape & Reel Speifiation SC70-5 User Feeding iretion E F W t 0.27 ax 0.00 ax Embossed Carrier Tape & Reel Speifiation SC70--6 User Feeding iretion E F W t 0.27 ax 0.00 ax
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N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:
MOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
Specification of V-PORT XXXX-X-V05 Series
1 Scope Specification of V-PORT-0402 -XXXX-X-V05 Series This specification is applied to ESD and EMI protection for I/O port, for example, VGA, US etc. The customer designed part number drawing take precedence
2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information
YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
NGD8205N, NGD8205AN. Ignition IGBT. 20 Amp, 350 Volt, N Channel DPAK. 20 A, 350 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V
NGD25N, NGD25AN Ignition IGBT 2 Amp, 35 Volt, N hannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for
FDG6322C Dual N & P Channel Digital FET
FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
NGD8201N, NGD8201AN. Ignition IGBT. 20 A, 400 V, N Channel DPAK. 20 A, 400 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V
NGD2N, NGD2AN Ignition IGBT 2 A, 4 V, N hannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in
Low VF SMD Schottky Barrier Diode
Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing
2 Input NAND Gate L74VHC1G00
Input NAND Gate The is an advanced high speed CMOS input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and
Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
S S. Top View Bottom View
YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
HIGH SPEED TRANSISTOR OPTOCOUPLERS
SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist
RS INDUSTRY LIMITED. RS Chip Array ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D
APPROVAL SHEET Customer Information Customer : Part Name : Part No. : Model No. : COMPANY PURCHASE R&D Vendor Information Name: RS INDUSTRY LIMITED Part Name ARRAY TYPE MULTILAYER VARISTOR Part No. RS
High Voltage, Input Rectifier Diode, 20 A
VS-ETS..-M3, VS-TS..-M3 High Voltage, Input Retifier Diode, 3 L TO-C Base athode 3 Cathode node VS-ETS.. 3 PRIMRY CHRCTERISTICS 3L TO-B Cathode to base 3 node node VS-TS.. I F(V) V R 8 V, V V F at I F.
PHOTOTRANSISTOR OPTOCOUPLERS
MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
FEATURES APPLICATIONS
6 On-Resistance, +12 V, ± V, + V, +3 V, SPST and SPDT Switches DESRIPTION analog switches are designed to operate from +3 V to +16 V single supply or ± 3 V to ± 8 V dual supply and are fully specified
Exterior. cathode. V BR min.(v) V R (V)
Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 3000Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior DO-214AB
2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD-Protection Diode - Flow Through Design
VBUS5M2-HT1 2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD-Protection Diode - Flow Through Design 1 22814 3 MRKING (example only) Bar = cathode marking X = date code Y = type code (see
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High
N-Channel 60 V (D-S) MOSFET
Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:
1.4(H)mm, 1.5/2mm-travel Surface Mount Type. A low-profile slide switch with 1.4mm thickness. Typical Specifications
SSSS8.(H)mm, /mm-travel Surfae Mount Type low-profile slide swith with.mm thikness Produt Line (mm) tuator diretion Vertial tuator thikness (mm) t Poles Positions Typial Speifiations Changeover timing
AO7401 P-Channel Enhancement Mode Field Effect Transistor
Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel
YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline
MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223VM)