AOZ8822. Ultra-Low Capacitance Two-line TVS Diode. General Description. Features. Applications

Size: px
Start display at page:

Download "AOZ8822. Ultra-Low Capacitance Two-line TVS Diode. General Description. Features. Applications"

Transcription

1 Ultra-ow Capacitance Two-line TVS Diode General Description The OZ8822 is an ultra-low capacitance two-line transient voltage suppressor diode designed to protect very high-speed data lines and voltage sensitive electronics from high transient conditions and SD. This device incorporates two TVS diodes in an ultra-small DFN 1.0 x 0.6 package. During transient conditions, the ultra-low capacitance TVS diodes directs the transient to ground. The OZ8822 may be used to meet the SD immunity requirements of IC , evel 4 (± 15 kv air, ± 15 kv contact discharge). The OZ8822 comes in an RoHS compliant 3-lead DFN package and is rated over a -40 C to +85 C ambient temperature range. The ultra-small 1.0 mm x 0.6 mm x 0.5 mm DFN package makes it ideal for applications where PCB space is a premium. The small size and high SD protection makes it ideal for protecting voltage sensitive electronics from high transient conditions and SD. Features SD protection for high-speed data lines: xceeds: IC (SD) ± 15 kv (air), ± 15 kv (contact) Human Body Model (HBM) ± 15 kv Ultra-low capacitance: pf ow clamping voltage ow operating voltage: 5 V Green product pplications Portable handheld devices Keypads, data lines, buttons Notebook computers Digital Cameras Portable GPS MP3 players Typical pplication Pin Configuration I/O1 I/O Unidirection Protection of Two ine Rev. 4.0 March Page 1 of 7

2 Ordering Information Part Number mbient Temperature Range Package nvironmental OZ8822DI C to +85 C DFN 1.0 x 0.6 Green Product OS Green Products use reduced levels of Halogens, and are also RoHS compliant. Please visit for additional information. bsolute Maximum Ratings xceeding the bsolute Maximum ratings may damage the device. Parameter Rating VP VN 5 V Peak Pulse Current (I PP ), t P = 8/20µs 2 Storage Temperature (T S ) -65 C to +150 C SD Rating per IC , Contact (1) ± 15 kv SD Rating per IC , ir (1) ± 15 kv SD Rating per Human Body Model (2) ± 15 kv Notes: 1. IC discharge with C Discharge = 150 pf, R Discharge = 330 Ω. 2. Human Body Discharge per MI-STD-883, Method 3015 C Discharge = 100pF, R Discharge = 1.5 kω. Maximum Operating Ratings Parameter Rating Junction Temperature (T J ) -40 C to +125 C Rev. 4.0 March Page 2 of 7

3 lectrical Characteristics T = 25 C unless otherwise specified. Specifications in BOD indicate a temperature range of -40 C to +85 C. Symbol Parameter Diagram I PP V C Maximum Reverse Peak Pulse Current Clamping I PP I V RWM Working Peak Reverse Voltage I F I R Maximum Reverse eakage Current V BR I T I F Breakdown Voltage Test Current Forward Current V C V BR V RWM I R IT V F V V F Forward Voltage P PK Peak Power Dissipation I PP C J V R = 0 and f = 1MHz Symbol Parameter Conditions Min. Typ. Units V RWM Reverse Working Voltage (3) I/O pin to ground 5.0 V V BR Reverse Breakdown Voltage (4) I T = 1 m, I/O pin to ground V I R Reverse eakage Current V RWM = 5 V, between I/O pin to ground 0.1 µ I PP = 1, t P = 100 ns, I/O pin to ground 13 V I PP = 2, t P = 100 ns, I/O pin to ground 14 V I PP = 5, t P = 100 ns, I/O pin to ground 17 V V C Channel Clamp Voltage I PP = 1, IC , 8/20 µs, I/O pin to ground 14.5 V I PP = 2, IC , 8/20 µs, I/O pin to ground 19 V C J Junction Capacitance V R = 0 V, f = 1 MHz, I/O pin to ground 0.75 pf Notes: 3. The working peak reverse voltage (V RWM ) should be equal to or greater than the DC or continuous peak operating voltage level. 4. V BR is measured at the pulse test current I T. Rev. 4.0 March Page 3 of 7

4 Typical Performance Characteristics 20 Clamping Voltage vs. Peak Pulse Current (tperiod = 100 ns, tr = 1 ns) 8 Forward Voltage vs. Forward Current (tperiod = 100 ns, tr = 1 ns) Clamping Voltage, VC (V) Forward Voltage (V) Peak Pulse Current, Forward Current () I/O Gnd Insertion oss (S21) vs. Frequency 5 0 Insertion oss (db) Frequency (MHz) Rev. 4.0 March Page 4 of 7

5 Package Dimensions, DFN 1.0 x 0.6 aaa B // bbb B b2 (x2) 2x D e b1 2x 0.08 B 1 B Seating Plane 2x 0.08 B PIN1 e1 1 SID VIW BOTTOM VIW RCOMMNDD ND PTTRN UNIT: mm Dimensions in millimeters Symbols 1 b1 b2 D e e1 1 aaa bbb Min Nom Dimensions in inches Symbols 1 b b2 D e e1 1 aaa bbb Min Nom Notes: 1. ll dimensions are in milliteters. ngles are in degrees. 2.Coplanarity applies to the exposed heat sink slug as well as the terminals. Rev. 4.0 March Page 5 of 7

6 Tape and Reel Dimensions, DFN 1.0 x 0.6 Carrier Tape T D1 P1 P2 1 2 B0 K0 UNIT: mm 0 D0 P0 Option Package DFN 1.0x0.6/ DFN 1.0x0.6 (8 mm) B K D0 D / P0 P P2 T 0.23 ±0.02 B DFN 1.0x0.6/ DFN 1.0x0.6 (8 mm) 0.65 ± ± ± / Reel W1 G S V M N K R H UNIT: mm W Tape Size 8mm Reel Size ø178 M ø178 ±0.5 N ø55 ±1 W /-0 W H ø13.0 ±0.5 K 10.1 S 2.0 ±0.5 G N/ R N/ V N/ eader / Trailer & Orientation TVS Unit Per Reel: 10000pcs Trailer Tape 300mm Min. Components Tape Orientation in Pocket eader Tape 500mm Min. Rev. 4.0 March Page 6 of 7

7 Part Marking V X Product Number Code Date Code G DISCIMR lpha and Omega Semiconductor makes no representations or warranties with respect to the accuracy or completeness of the information provided herein and takes no liabilities for the consequences of use of such information or any product described herein. lpha and Omega Semiconductor reserves the right to make changes to such information at any time without further notice. This document does not constitute the grant of any intellectual property rights or representation of non-infringement of any third party s intellectual property rights. IF SUPPORT POICY PH ND OMG SMICONDUCTOR PRODUCTS R NOT UTHORIZD FOR US S CRITIC COMPONNTS IN IF SUPPORT DVICS OR SYSTMS. s used herein: 1. ife support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Rev. 4.0 March Page 7 of 7

AOZ Ultra Low Capacitance One-line Bi-directional TVS Diode. Features. General Description. Applications. Signal Line

AOZ Ultra Low Capacitance One-line Bi-directional TVS Diode. Features. General Description. Applications. Signal Line Ultra Low Capacitance One-line Bi-directional TVS Diode General Description The is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data

More information

AOZ8212ACI-05. Two-line Bi-directional TVS Diode. General Description. Features. Applications

AOZ8212ACI-05. Two-line Bi-directional TVS Diode. General Description. Features. Applications Two-line Bi-directional TVS Diode General Description The is a two-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions

More information

AOZ8231A. One-line Bi-directional TVS Diode. Features. General Description. Applications

AOZ8231A. One-line Bi-directional TVS Diode. Features. General Description. Applications One-line Bi-directional TVS Diode General Description The AOZ8231A is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient

More information

AOZ1336DI. Single Channel Smart Load Switch. Features. General Description. Applications. Typical Application AOZ1336DI

AOZ1336DI. Single Channel Smart Load Switch. Features. General Description. Applications. Typical Application AOZ1336DI Single Channel Smart Load Switch General Description The AOZ1336DI is a single channel load switch with typical 27mΩ on-resistance in a small package. It contains an n-channel MOSFET for up to 5.5V input

More information

AOZ Ω Low-Voltage Dual-DPDT Analog Switch

AOZ Ω Low-Voltage Dual-DPDT Analog Switch 0.3Ω Low-Voltage Dual-DPDT nalog witch General Description The OZ6274 is a dual Double-Pole, Double-Throw (DPDT) analog switch that is designed to operate from a single 1.65V to 4.3V supply. The OZ6274

More information

AOZ Ω Low-Voltage Dual SPDT Analog Switch. General Description. Features. Applications AOZ6236

AOZ Ω Low-Voltage Dual SPDT Analog Switch. General Description. Features. Applications AOZ6236 0.35 Ω Low-Voltage Dual PDT nalog witch General Description The OZ6236 is a 0.35 Ω low-voltage Dual ingle Pole Double Throw (PDT) analog switch. The OZ6236 operates from a single 1.65 V to 4.3 V supply.

More information

AOZ6135 High Performance, Low R ON, 1Ω SPDT Analog Switch

AOZ6135 High Performance, Low R ON, 1Ω SPDT Analog Switch OZ6135 High Performance, Low R ON, 1Ω PDT nalog witch General Description The OZ6135 is a high performance single-pole double-throw (PDT), low power, TTL-compatible bus switch. The OZ6135 can handle analog

More information

AOZ6115 High Performance, Low R ON, SPST Analog Switch

AOZ6115 High Performance, Low R ON, SPST Analog Switch OZ6115 High Performance, Low R ON, PT nalog witch General Description The OZ6115 is a high performance single-pole single-throw (PT), low power, TTL-compatible bus switch. The OZ6115 can handle analog

More information

4-Line BUS-Port ESD-Protection

4-Line BUS-Port ESD-Protection 4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

OptiMOS 2 Small-Signal-Transistor

OptiMOS 2 Small-Signal-Transistor OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q11 1% lead-free; RoHS compliant Product Summary V DS

More information

HIGH SPEED TRANSISTOR OPTOCOUPLERS

HIGH SPEED TRANSISTOR OPTOCOUPLERS DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact pin small outline package. A separate connection

More information

The ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram

The ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram ESD5451R 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5451R is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to

More information

MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter

MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter General Description The MM74C00, MM74C02, and MM74C04 logic gates employ complementary MOS (CMOS) to achieve wide power

More information

OptiMOS 2 Small-Signal-Transistor

OptiMOS 2 Small-Signal-Transistor OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according

More information

MOC8111 MOC8112 MOC8113

MOC8111 MOC8112 MOC8113 PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor

More information

OptiMOS P2 Small-Signal-Transistor

OptiMOS P2 Small-Signal-Transistor OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according

More information

MM74C14 Hex Schmitt Trigger

MM74C14 Hex Schmitt Trigger MM74C14 Hex Schmitt Trigger General Description The MM74C14 Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement transistors. The

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 1 V R DS(on),max 12 Ω I DSS,min.9 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS

More information

MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter

MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter General Description The MM74C00, MM74C02, and MM74C04 logic gates employ complementary MOS (CMOS) to achieve wide power

More information

OptiMOS TM P3 Power-Transistor

OptiMOS TM P3 Power-Transistor BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications

More information

HIGH SPEED TRANSISTOR OPTOCOUPLERS

HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist

More information

MM74C14 Hex Schmitt Trigger

MM74C14 Hex Schmitt Trigger MM74C14 Hex Schmitt Trigger General Description The MM74C14 Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement transistors. The

More information

OptiMOS Small-Signal-Transistor

OptiMOS Small-Signal-Transistor 2N72DW OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Logic level Avalanche rated Fast switching Product Summary V DS 6 V R DS(on),max V GS =1 V 3 W V GS =4.5 V 4 I D.3 A Qualified

More information

OptiMOS Small-Signal-Transistor

OptiMOS Small-Signal-Transistor OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max

More information

Type Package Configuration Marking BAS28 BAS28W

Type Package Configuration Marking BAS28 BAS28W Silicon Switching Diode For highspeed switching applications Electrical insulated diodes Pbfree (RoHS compliant) package ) Qualified according EC Q /W "!,, Type Package Configuration Marking W SOT SOT

More information

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose

More information

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due

More information

MOC205-M MOC206-M MOC207-M MOC208-M

MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible

More information

NC7SB3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary)

NC7SB3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary) September 1999 Revised November 1999 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary) General Description The is a high performance, Analog Switch 2- channel CMOS

More information

SP1064 Series 8.5pF, 15 kv Diode Array

SP1064 Series 8.5pF, 15 kv Diode Array SP1064 Series 8.5pF, 15 kv Diode Array Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic

More information

SP8008 Series Diode Array

SP8008 Series Diode Array SP88 Series Diode Array RoHS Pb GRN Description The SP88 integrates eight channels of ultra low capacitance common mode protection for electronic equipment exposed to electrostatic discharges (SD. This

More information

SP1008 Series 6pF 15kV Bidirectional Discrete TVS

SP1008 Series 6pF 15kV Bidirectional Discrete TVS TVS iode Arrays (SPA Family of Products 6pF 15kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP1008 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized

More information

SP4042 Series 3.3V Diode Array RoHS Pb GREEN

SP4042 Series 3.3V Diode Array RoHS Pb GREEN SP4042 Series 3.3V Diode rray RoHS Pb GREEN Description The SP4042 integrates low capacitance steering diodes with a TVS diode to provide 2 channels of protection against lightning induced surge events

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified

More information

BSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101

BSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101 OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39

More information

Type Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N

Type Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)

More information

BSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.

BSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r. OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 6 V R DS(on),max 8 Ω I DSS,min.13 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS

More information

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline

More information

single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R Silicon PIN Diode Optimized for low current antenna switches in hand held applications Very low forward resistance (typ..5 Ω @ I F = ma) Low capacitance at zero volt reverse bias at frequencies above GHz

More information

V N (8) V N (7) V N (6) GND (5)

V N (8) V N (7) V N (6) GND (5) 4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level

More information

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due

More information

PHOTODARLINGTON OPTOCOUPLERS

PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, HBX, and TIL3 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U HB HB2 HB255 HB3 TIL3 FEATURES High sensitivity to low input

More information

AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS

AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS HAA HAA3 HAA2 HAA4 DESCRIPTION The HAAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES Bi-polar

More information

14.5 Pulsed drain current. 200 Gate source voltage V GS ± 20 V ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation

14.5 Pulsed drain current. 200 Gate source voltage V GS ± 20 V ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation SIPMOS Power Transistor BUZ 31 H N channel Enhancement mode valanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type V DS R DS(on) Package Pb-free BUZ 31 H 2 V 14.5.2 Ω PG-TO-22-3 Yes Maximum Ratings Parameter

More information

OptiMOS -P Small-Signal-Transistor

OptiMOS -P Small-Signal-Transistor OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Pin 1 Pin 3 Pin 5 Pin 4 n.c.

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Pin 1 Pin 3 Pin 5 Pin 4 n.c. TVS (transient voltage suppressor) Bi/uni-directional, 3.3 V, 2 pf, RoHS and halogen free compliant Feature list ESD/Transient/Surge protection according to: - IEC61-4-2 (ESD): ±3 kv (air/contact discharge)

More information

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and

More information

single single single 150 C Operating temperature range T op Storage temperature T stg

single single single 150 C Operating temperature range T op Storage temperature T stg Silicon PIN Diode Current-controlled RF resistor for switching and attenuating applications Frequency range MHz... 2 GHz Especially useful as antenna switch in TV-sat tuners Very low harmonics Pb-free

More information

MM74C906 Hex Open Drain N-Channel Buffers

MM74C906 Hex Open Drain N-Channel Buffers Hex Open Drain N-Channel Buffers General Description The MM74C906 buffer employs monolithic CMOS technology in achieving open drain outputs. The MM74C906 consists of six inverters driving six N-channel

More information

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

More information

Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration

Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V

More information

MM82C19 16-Line to 1-Line Multiplexer

MM82C19 16-Line to 1-Line Multiplexer 16-Line to 1-Line Multiplexer General Description The multiplex 16 digital lines to 1 output. A 4-bit address code determines the particular 1-of-16 inputs which is routed to the output. The data is inverted

More information

Recommended Land Pattern: [mm]

Recommended Land Pattern: [mm] Dimensions: [mm] Recommended Land Pattern: [mm] Absolute Maximum Ratings (Ambient Temperature 25 C): Properties Test conditions Value Unit (Reverse) Peak Pulse Current t p = 8/20µs I Peak 4 A 1 3,4 1,6

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor Type BSS225 SIPMOS Small-Signal-Transistor Feature n-channel enhancement mode Logic level Product Summary 1) V DS 6 V R DS(on),max 45 Ω I D.9 A dv /dt rated Qualified according to AEC Q11 Halogen free

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;

More information

Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package

Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package 17295-5 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide

More information

CoolMOS Power Transistor

CoolMOS Power Transistor CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83

More information

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68.

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68. SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Gate pin1 Product Summary V DS 1 V R DS(on) 6 Ω I D.17 Drain pin 3 Source pin 2 PG-SOT23 3 1 2 VPS5161 Type Package

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary

More information

OptiMOS 3 Power-MOSFET

OptiMOS 3 Power-MOSFET OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max

More information

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package ) Qualified

More information

BSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0

BSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0 SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free

More information

NC7SVU04 TinyLogic ULP-A Unbuffered Inverter

NC7SVU04 TinyLogic ULP-A Unbuffered Inverter TinyLogic ULP-A Unbuffered Inverter General Description The NC7SVU04 is a single unbuffered inverter from Fairchild s Ultra Low Power-A (ULP-A) series of TinyLogic. ULP-A is ideal for applications that

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified

More information

NC7SV11 TinyLogic ULP-A 3-Input AND Gate

NC7SV11 TinyLogic ULP-A 3-Input AND Gate NC7SV11 TinyLogic ULP-A 3-Input AND Gate General Description The NC7SV11 is a single 3-Input AND Gate from Fairchild s Ultra Low Power-A (ULP-A) series of TinyLogic. ULP-A is ideal for applications that

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D

More information

74F109 Dual JK Positive Edge-Triggered Flip-Flop

74F109 Dual JK Positive Edge-Triggered Flip-Flop Dual JK Positive Edge-Triggered Flip-Flop General Description The F109 consists of two high-speed, completely independent transition clocked JK flip-flops. The clocking operation is independent of rise

More information

OptiMOS (TM) 3 Power-Transistor

OptiMOS (TM) 3 Power-Transistor IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R

More information

MM74HC4020 MM74HC Stage Binary Counter 12-Stage Binary Counter

MM74HC4020 MM74HC Stage Binary Counter 12-Stage Binary Counter February 1984 Revised February 1999 MM74HC4020 MM74HC4040 14-Stage Binary Counter 12-Stage Binary Counter General Description The MM74HC4020, MM74HC4040, are high speed binary ripple carry counters. These

More information

74F30 8-Input NAND Gate

74F30 8-Input NAND Gate 8-Input NAND Gate General Description This device contains a single gate, which performs the logic NAND function. April 1988 Revised October 2000 74F30 8-Input NAND Gate Ordering Code: Order Number Package

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V

More information

BSS123. Rev K/W. R thja

BSS123. Rev K/W. R thja Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25

More information

DM74LS75 Quad Latch. DM74LS75 Quad Latch. General Description. Ordering Code: Connection Diagram. Logic Diagram. Function Table (Each Latch)

DM74LS75 Quad Latch. DM74LS75 Quad Latch. General Description. Ordering Code: Connection Diagram. Logic Diagram. Function Table (Each Latch) Quad Latch General Description These latches are ideally suited for use as temporary storage for binary information between processing units and input/output or indicator units. Information present at

More information

74F175 Quad D-Type Flip-Flop

74F175 Quad D-Type Flip-Flop Quad D-Type Flip-Flop General Description The 74F175 is a high-speed quad D-type flip-flop. The device is useful for general flip-flop requirements where clock and clear inputs are common. The information

More information

SIPMOS Power-Transistor

SIPMOS Power-Transistor SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package

More information

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating

More information

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS

More information

single common cathode common cathode

single common cathode common cathode Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance

More information

OptiMOS TM Power-MOSFET

OptiMOS TM Power-MOSFET BSC1NE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance N-channel Qualified

More information

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw Silicon Low Leakage Diode Array Lowleakage applications Medium speed switching times Pbfree (RoHS compliant) package 1) Qualified according AEC Q11 BAV17!,, Type Package Configuration Marking BAV17 SOT23

More information

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

Preliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -

Preliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 - SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package

More information