TVS Diode Arrays (SPA Diodes) SP05 Series - 30pF 30kV Unidirectional TVS Array. General Purpose ESD Protection - SP05 Series.
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1 TVS iode rrays (S iodes) General urpose S rotetion - S05 Series S05 Series - 0pF 0kV Unidiretional TVS rray RoHS GR esription This surfae mount family of arrays suppress S and other transient overvoltage events. Used to meet the International letrotehnial Compatiility (IC transient immunity standards IC for letrostati isharge Requirements), these omponents an help protet sensitive digital or analog input iruits on data, signal, or ontrol lines with voltage levels up to 5VC. inout S050HTG S050JTG S050HTG S0504HTG S0504JTG The monolithi silion arrays are omprised of speially designed strutures for transient voltage suppression (TVS). The size and shape of these strutures have e tailored for transient protetion. Compared to OVs, this diode array provides a lower lamping voltage and lower off-state apaitane S0505HTG S0505JTG 6 5 S0506TG Features n rray of,, 4, 5 or 6 TVS valanhe iodes in a ultra small SC70, SOT-, SOT-4 or SO pakages S Capaility Standards - IC , iret isharge... 0kV (evel 4) - IC , ir isharge... 0kV (evel 4) - I ST kV Input rotetion for ppliations Up to 5VC Fast Response Time...<ns ow Input Capaitane...0pF Typial Operating Temperature Range...-40ºC to 5ºC 4 ppliations 4 oile phone handsets ersonal igital ssistants () ortale handheld equipment (aptop, almtop omputers) Computer port, keyoard (US.) igital still ameras igital video ameras players oisture Sensitivity evel (S-) dditional Information ife Support ote: ot Intended for Use in ife Support or ife Saving ppliations The produts shown herein are not designed for use in life sustaining or life saving appliations unless otherwise expressly indiated. atasheet Resoures Samples
2 iode Capaitane (pf) TVS iode rrays (S iodes) General urpose S rotetion - S05 Series solute aximum Ratings arameter Rating Units T O Operating Temperature 40 to 5 ºC T STOR Storage Temperature -55 to 50 ºC otes: CUTIO: Stresses aove those listed in solute aximum Ratings may ause permanent damage to the omponent. This is a stress only rating and operation of the omponent at these or any other onditions aove those indiated in the operational setions of this speifiation is not implied. letrial Charateristis T = +5ºC, Unless Otherwise Speified arameter Test Conditions in Typ ax Units Reverse Standoff Voltage I R μ V Reverse Standoff eakage Current V = 5.0V 00 n Signal Clamp Voltage ositive I = m V egative I = 0m V Clamp Voltage during S I-ST-88 ethod 05 (H) test + 8kV V - 8kV -8 V S Test evel () IC , Contat disharge 0 kv I-ST-88 ethod 05 (H) 0 kv Hz 0 pf Turn on/off Time < ns iode ynami Resistane Forward Condution.0 Ω Reverse Condution.4 Ω ote: () S voltage applied etween hannel pins and ground, one pin at a time; all other hannel pins are open; all ground pins are grounded. Typial iode Capaitane vs. Reverse Voltage iode Reverse Voltage (V)
3 Temperature TVS iode rrays (S iodes) General urpose S rotetion - S05 Series Soldering arameters Reflow Condition Free assemly - Temperature in (T s(min) ) 50 C re Heat - Temperature ax (T s(max) ) 00 C - Time (min to max) (t s ) ses verage ramp up rate (iquidus) Temp (T ) to peak 5 C/seond max T S(max) to T - Ramp-up Rate 5 C/seond max Reflow - Temperature (T ) (iquidus) 7 C - Temperature (t ) seonds eak Temperature (T ) 60 +0/-5 C Time within 5 C of atual peak Temperature (t p ) 0 40 seonds Ramp-down Rate 5 C/seond max T T T S(max) T S(min) 5 t S reheat Ramp-up time to peak temperature t t Ramp-down Time Critial Zone T to T Time 5 C to peak Temperature (T ) 8 minutes ax. o not exeed 60 C akage imensions SOT4 e e 4 50 S050HTG - SOT (.4").60 (.40") Reommended ad ayout 0.80 (.0").00 (.040").0 (.087") RF.00 (.040").0 (.048") 0.80 (.0").00 (.040").0.40 (.4") (.087").60 (.40").40 (.055") RF X.90 (.075").70 (.067") SC 0.80 (.0").00 (.040") akage SOT4-4 ins 4 JC TO (.055") X (.075").70 (.067") SC e.9 SC SC e 0.0 SC SC RF 0.0 RF.00 (.040") 0.80 (.0").0 (.048").00 (.040")
4 TVS iode rrays (S iodes) General urpose S rotetion - S05 Series akage imensions SC70 C 50 e e H S050JTG - SC70- akage SC70- ins JC O e 0.66 SC 0.06 SC H e e H S0504JTG - SC70-5 akage SC70-5 ins 5 JC O O e 0.65 SC 0.06 SC H e e H T S0505JTG - SC70-6 Reommended ad ayout O (RF) R (RF) S (RF) (RF) akage SC70-6 ins 6 JC O e 0.65 SC 0.06 SC O H O R S T
5 TVS iode rrays (S iodes) General urpose S rotetion - S05 Series akage imensions SOT C 50 e e e e S050HTG - SOT- Reommended ad ayout 0 S0504HTG - SOT-5 Reommended ad ayout O 0 akage SOT- ins JC TO e 0.95 SC 0.08 SC e.90 SC SC 0.54 RF 0.0 RF O TY TY akage SOT-5 ins 5 JC O O e 0.95 SC 0.08 SC e.90 SC SC 0.60 RF 0.04 RF O TY TY e e S0505HTG - SOT-6 Reommended ad ayout O akage SOT-6 ins 6 JC O O e 0.95 SC 0.08 SC e.90 SC SC 0.60 RF 0.04 RF O TY TY
6 TVS iode rrays (S iodes) General urpose S rotetion - S05 Series akage imensions SO F 506 C S0506TG - SO-8 Reommended ad ayout H G F F I akage SO ins 8 JC O-87 G H F F I TY - 0.0TY C TY TY TY -.007TY F F G H I art umering System rodut Charateristis TVS iode rrays (S iodes) S050 *** TG lank = OT Green/RoHS/ead Free* G= Green/RoHS/ead Free rodut ead lating ead aterial G Green version - atte Tin (Sn) Copper / Iron lloy T= Tape & Reel akage Series = SO-8 H = SOT-, -5, -6 or SOT4-4 J = SC70-, -5 or -6 umer of Channels 0 = hannel (SC70-, SOT pakages) 0 = hannel (SOT4 pakage) 04 = 4 hannel (SC70-5, SOT-5 pakage) 05 = 5 hannel (SC70-6, SOT-6 pakages) 06 = 6 hannel (SO-8 pakage) Ordering Information *OT: To order O-Green/RoHS/ead Free version of produt, remove G at the end of part numer. art umer CH akage Type Quantity er Reel S050HTG SOT- 000 S050HTG SOT S0504HTG 4 SOT S0505HTG 5 SOT S0506TG 6 SO S050JTG SC S0504JTG 4 SC S0505JTG 5 SC ead Coplanarity Sustrate aterial ody aterial Flammaility inhes (0.0mm) Silion olded Compound U Reognized ompound meeting flammaility rating V-0 otes:. ll dimensions are in millimeters.. imensions inlude solder plating.. imensions are exlusive of mold flash & metal urr. 4. lo is faing up for mold and faing down for trim/form, i.e. reverse trim/form. 5. akage surfae matte finish VI -.
7 TVS iode rrays (S iodes) General urpose S rotetion - S05 Series mossed Carrier Tape & Reel Speifiation SOT- CCSS HO 4.4mm mm 80mm 60mm 8mm T R GR IFORTIO. 000 ICS R R.. ORR I UTIS OF FU RS OY.. TS I-48 RVISIO "" SCIFICTIOS. SOT- (8mm OCKT ITCH) F W t mm USR IRCTIO OF F I mossed Carrier Tape & Reel Speifiation SOT-5 CCSS HO 4.4mm mm 80mm 60mm 8mm T R COVR T GR IFORTIO. 000 ICS R R.. ORR I UTIS OF FU RS OY.. TS I-48 RVISIO "" SCIFICTIOS. SOT-5 (8mm OCKT ITCH) USR IRCTIO OF F I F W t mm mossed Carrier Tape & Reel Speifiation SOT-6 CCSS HO 4.4mm mm 80mm 60mm 8.4mm 8mm T R GR IFORTIO. 000 ICS R R.. ORR I UTIS OF FU RS OY.. TS I-48 RVISIO "" SCIFICTIOS. COVR T SOT-6 (8mm OCKT ITCH) USR IRCTIO OF F I F W t
8 TVS iode rrays (S iodes) General urpose S rotetion - S05 Series mossed Carrier Tape & Reel Speifiation SOT C d F W in User Feeding iretion mossed Carrier Tape & Reel Speifiation SO-8 User Feeding iretion F in in W K t 0.0 ± ± 0.00 in oation mossed Carrier Tape & Reel Speifiation SC70- User Feeding iretion F W t 0.7 ax 0.00 ax
9 TVS iode rrays (S iodes) General urpose S rotetion - S05 Series mossed Carrier Tape & Reel Speifiation SC70-5 User Feeding iretion F W t 0.7 ax 0.00 ax mossed Carrier Tape & Reel Speifiation SC70--6 User Feeding iretion F W t 0.7 ax 0.00 ax islaimer otie - Information furnished is elieved to e aurate and reliale. However, users should independently evaluate the suitaility of and test eah produt seleted for their own appliations. ittelfuse produts are not designed for, and may not e used in, all appliations. Read omplete islaimer otie at
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AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
IS2805 DESCRIPTION FEATURES
DESCRIPTION The is an optically coupled isolator consists of two infrared emitting diodes in reverse parallel connection and optically coupled to an NPN silicon photo transistor. This device belongs to
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4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose
MOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units
BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair
Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kv, 2 kv and 3 kv
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S S. Top View Bottom View
YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
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a FEATURES +.8 V to +. ingle Supply 2. V ual Supply 2. ON Resistance. ON Resistance Flatness pa Leakage Currents 4 ns Switching Times Single 6-to- Multiplexer AG76 ifferential 8-to- Multiplexer AG77 28-Lead
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Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 40 C 1.5 A I T(AV) Average on-state current T C
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YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
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HMA2 Series HMA24 HMA27 Series HMAA275 DESCRITION The HMA24, HMA2 series and HMA27 series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat
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