Package Lead Code Identification SINGLE 3 SERIES 3 UNCONNECTED PAIR RING QUAD

Transcription

1 Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Surface Mount SOT-2/SOT- 4 Package Low Turn-On Voltage (As Low as 4 V at ma) Low FIT (Failure in Time) Rate* Six-sigma Quality Level Single, Dual and Quad Versions Tape and Reel Options Available Package Lead Code Identification SINGLE 2 #0 UNCONNECTED PAIR 4 SERIES 2 #2 RING QUAD 4 TOP VIEW COMMON ANODE 2 # BRIDGE QUAD 4 COMMON CATHODE 2 #4 CROSS-OVER QUAD 4 * For more information see the Surface Mount Schottky Reliability Data Sheet. 2 #5 2 #7 2 #8 2 #9 Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching, sampling, clamping, and wave shaping. The HSMS-2800 series of diodes is optimized for high voltage applications. The HSMS-280 series of diodes features very low flicker (/f) noise. The HSMS-2820 series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. The HSMS-2860 series is a high performance diode offering superior V f and ultra-low capacitance. Note that HP s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match.

2 2 Electrical Specifications T A =, Single Diode [4] Nearest Minimum Maxi- Maximum Maximum Maxi- Typical Part Package Equivalent Break- mum Forward Reverse mum Dynamic Num- Mark- Axial Lead down Forward Voltage Leakage Capac- Resisber ing Lead Part No. Voltage Voltage V F I R itance tance HSMS [5] Code [] Code Configuration V BR (V) V F (mv) I F (ma) V R (V) C T (pf) R D (Ω) [6] 2800 A0 0 Single (N57) 2802 A2 2 Series 280 A Common Anode 2804 A4 4 Common 2805 A5 5 Unconnected 2807 A7 7 Ring Quad [6] 2808 A8 8 Bridge Quad [6] 280 B0 0 Single (N572) 282 B2 2 Series 28 B Common Anode 284 B4 4 Common 285 B5 5 Unconnected 287 B7 7 Ring Quad [6] 288 B8 8 Bridge Quad [6] 2820 C0 0 Single 285 5* C2 2 Series 282 C Common Anode 2824 C4 4 Common 2825 C5 5 Unconnected 2827 C7 7 Ring Quad [6] 2828 C8 8 Bridge Quad [6] 2829 C9 9 Cross-over Quad 2860 T0 0 Single None T 2 Series 286 T Common Anode 2864 T4 4 Common 2865 T5 5 Unconnected Test Conditions I R = 0 µa I F = V F = 0 V I F = 5 ma *I R = ma [] f = 00 µa.0 MHz [2] Notes:. V F for diodes in pairs and quads in 5 mv maximum at ma. 2. C TO for diodes in pairs and quads is 0.2 pf maximum.. Package marking code is in white. 4. Effective Carrier Lifetime (τ) for all these diodes is 00 ps maximum measured with Krakauer method at 5 ma, except HSMS-282X which is measured at 20 ma. 5. See section titled Quad Capacitance. 6. R D = R S Ω at and I f = 5 ma.

3 Absolute Maximum Ratings [] T A = Symbol Parameter Value I f Forward Current ( ms Pulse) Amp P t Total Device Dissipation 250 mw [2] P IV Peak Inverse Voltage Same as V BR T j Junction Temperature 50 C T stg Storage Temperature -65 to 50 C Notes:. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. CW Power Dissipation at T LEAD =. Derate to zero at maximum rated temperature. Quad Capacitance Capacitance of Schottky diode quads is measured using an HP427 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mv R.M.S. voltage at MHz. HP defines this measurement as CM, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C x C 2 C x C 4 CDIAGONAL = + C + C 2 C + C 4 C C C C 2 C 4 A B The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula C ADJACENT = C C 2 C C 4 This information does not apply to cross-over quad diodes. SPICE Parameters Parameter Units HSMS-280X HSMS-28X HSMS-282X HSMS-286X B V V C J0 pf E G ev I BV A 0E- 5 0E-5 0E-4 0E-5 I S A x 0E x 0E x 0E x 0E-8 N R S Ω P B V P T M

4 4 Typical Parameters at T A = (unless otherwise noted), Single Diode C 5 C 55 C Figure. Typical Forward Current vs. Forward Voltage at Temperatures HSMS-2800 Series Figure 2. Typical V f Match, HSMS-2800 Series s and Quads C 5 C 55 C Figure. Typical Forward Current vs. Forward Voltage at Temperatures HSMS-280 Series Figure 4. Typical V f Match, HSMS-280 Series s and Quads C 5 C 55 C Figure 5. Typical Forward Current vs. Forward Voltage At Temperatures HSMS-2820 Series Figure 6. Typical V f Match, HSMS-2820 Series s and Quads at Mixer Bias Levels. 0 I F - FORWARD CURRENT (µa) Figure 7. Typical V f Match, HSMS-2820 Series s at Detector Bias Levels. FORWARD CURRENT (ma) C FORWARD VOLTAGE (V) Figure 8. Typical Forward Current vs. Forward Voltage at Temperature, HSMS-2860 Series. I F - FORWARD CURRENT (µa) Figure 9. Typical V f Match, HSMS-2860 Series s at Detector Bias Levels. 0

5 5 Typical Parameters, continued 00,000 00,000 00,000 I R REVERSE CURRENT (na) 0, T A = + T A = +75 C T A = V R REVERSE VOLTAGE (V) Figure 0. Reverse Current vs. Reverse Voltage at Temperatures HSMS-2800 Series. I R REVERSE CURRENT (na) 0, T A = + T A = +75 C T A = V R REVERSE VOLTAGE (V) Figure. Reverse Current vs. Reverse Voltage at Temperatures HSMS-280 Series. I R REVERSE CURRENT (na) 0, T A = + T A = +75 C T A = V R REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage at Temperatures HSMS-2820 Series. R D DYNAMIC RESISTANCE (Ω) HSMS-2800 SERIES HSMS-280 SERIES HSMS-2820 SERIES I F FORWARD CURRENT (ma) Figure. Dynamic Resistance vs. Forward Current HSMS-2800 Series. C T CAPACITANCE (pf) V R REVERSE VOLTAGE (V) Figure 4. Total Capacitance vs. Reverse Voltage HSMS-2800 Series. C T CAPACITANCE (pf) V R REVERSE VOLTAGE (V) Figure 5. Total Capacitance vs. Reverse Voltage HSMS-280 Series. C T CAPACITANCE (pf) V R REVERSE VOLTAGE (V) Figure 6. Total Capacitance vs. Reverse Voltage HSMS-2820 Series. Applications Information Schottky Diode Fundamentals See the HSMS-280A series data sheet.

6 Package Characteristics Lead Material... Alloy 42 Lead Finish... Tin-Lead 85/5% Max. Soldering Temperature C for 5 sec Min. Lead Strength... 2 pounds pull Typical Package Inductance... 2 nh (opposite leads) Typical Package Capacitance pf (opposite leads) Package Dimensions Outline 2 (SOT-2) Device Orientation USER FEED DIRECTION REEL COVER TAPE CARRIER TAPE.02 (0.040) 0.89 (0.05) PACKAGE MARKING CODE X X 0.54 (0.02) 7 (0.05).40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) 8 mm TOP VIEW 4 mm END VIEW (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070) TOP VIEW Figure 7 Option L for SOT-2 Packages..06 (0.20) 2.80 (0.0) 0.52 (0.006) (0.00).02 (0.04) 0.85 (0.0) 0.0 (0.004) 0.0 (0.0005) SIDE VIEW 0.69 (0.027) 0.45 (0.08) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) Outline 4 (SOT-4) 0.92 (0.06) 0.78 (0.0) Figure 8. Option L for SOT-4 Packages. PACKAGE MARKING CODE E XX C B E 0.60 (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070).06 (0.20) 2.80 (0.0).40 (0.055).20 (0.047) 0.54 (0.02) 7 (0.05).02 (0.04) 0.85 (0.0) 2.65 (0.04) 2.0 (0.08) 0.5 (0.006) 0.09 (0.00) For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: or Far East/Australasia: Call your local HP sales office. Japan: (8 ) Europe: Call your local HP sales office. 0.0 (0.004) 0.0 (0.0005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.69 (0.027) 0.45 (0.08) Data subject to change. Copyright 998 Hewlett-Packard Co. Obsoletes E, E Printed in U.S.A E (/98)