Evaluation board for automotive-grade ESD protection. Description

Size: px
Start display at page:

Download "Evaluation board for automotive-grade ESD protection. Description"

Transcription

1 EVAL-OET00V Evaluation board for - ESD protection Data brief Description This demonstration tool is designed to provide an easy way to evaluate the robustness of ESD diodes developed for the environment. It is based on a master-slave structure on the same board using two MAF. The microcontrollers communicate with each other via a communication loop based on LIN/CAN protocol. Communication flow status is indicated by four onboard LEDs. The LIN and CAN bus interfaces use four transceivers and are supplied by the step-up converter. Features Input voltage V V output, step-up converter for transceiver supply voltage LIN transceiver CAN transceiver Automotive- ESD protection IEC000-- compatibility August 0 DocID090 Rev /0 For further information contact your local Microelectronics sales office

2 9 Schematics EVAL-OET00V Schematics Figure : Schematics power section EP UP CONVERTER V to V +V R K U Vcc Vout SY Fsw EN L uh D PSL0-Y +V C n, V C 0uF C 00nF R 0k COMP TP A9A Q NNF0L R9 k, % R0 ESDAVSCY FB U C n, V R.k C9 0pF 00nF C0 D PSL0-Y R.9k, % POWER INPUT AND PROTECTION POWER CAN MCU LIN +V DC-0B J Vin R9 PTC 0. /W U B CB J VtoV D C C PSG SMTVAY 00nF 0uF C C CG C9 N.M CG 00nF CG Murata BNX00-0 U LFCDT-TRY VIN VOUT V C0.u 0 Figure : Schematics LIN section LIN +V J VBAT C R0 K NORMAL OPEN U R 0 00nF J D BATZFILM D BATZFILM C 00nF ESD PROTECTION LIN J9 LIN OUTPUT V VCC LIN UART_RX LIN_EN_MCU C 00nF LIN_EN_MCU R9 N.M R0 0k UART_RX R 0k UART_TX R 0k UART_TX R K R R TP R 0 U0 NORMAL OPEN MAER U9 RXD WUP RXD TXD INH SLP_N Vs TXD LIN TJA0T/0 U 00nF SLAVE SLP_N Vs WUP INH LIN C TP TP J TP9 C 0pF C nf R K D BATZFILM C 00nF ESD_Tip TP D FOR VOLTAGE PROBE TP ESDLIN VBAT J0 ESD_Tip TP D FOR VOLTAGE PROBE ESDLIN TP0 D SOD SOD HIGH CURRENT 0A for nsec D +V ESD PROTECTION LIN V VCC LIN SOD SOD LIN OUTPUT J R 0k TJA0T/0 TP HIGH CURRENT 0A for nsec /0 DocID090 Rev

3 EVAL-OET00V Schematics DocID090 Rev /0 Figure : Schematics CAN section Figure : Schematics master node R U R J M CAN TX_MCU +V V J Vbat SPLIT R C pf R EN BATZFILM CAN RX_MCU ESD_Tip CAN CONNECTOR BATZFILM 0 J TP9 RXD C 00nF 9 V ERR_N C pf ESD PROTECTION CAN ESD_Tip TP R 0k WAKE INH R TXD R TP R EN CAN_MCU VBAT B_N ESD PROTECTION CAN 9 SPLIT P M RXD R R0 C pf C pf C 00nF TP L CHOKE CM Vbat R9 NORMAL CLOSED VIO VCC TP D ESDCAN L CHOKE CM NORMAL CLOSED CAN CONNECTOR R ESD_Tip R0 D0 VCC R U TJA0T R B_N R R +V EN CAN_MCU M D ESDCAN VIO SPLIT 0 R VBAT TP0 R 0k R TP R J 9 WAKE TXD D ESDCAN ERR_N M C pf INH R CAN TX_MCU Common Mode Choke ACTB-0-P TDK R9 SPLIT D ESDCAN U ERR_N CAN_MCU P R 0k R CAN RX_MCU B_N CAN_MCU D ESD_Tip EN TP R R 0k R ERR_N CAN_MCU 9 CAN R MAER SLAVE Common Mode Choke ACTB-0-P TDK R R +V B_N CAN_MCU C pf R U TJA0T

4 Schematics Figure : Schematics slave node EVAL-OET00V /0 DocID090 Rev

5 EVAL-OET00V Bill of materials Bill of materials Table : EVAL-OET00V bill of materials Item Q.ty Reference Value Description Part Number Manufacturer C C C,C,C0,C,C,C,C,C,C,C, C,C9,C0,C,C, C,C9,C0 C,C,C,C,C,C C,C,C,C C,C C,C C,C,C,C 9 C9 0 C0 C,C Ceramic C0G - 0pF, 00V ±% nf, 00V ±% 00nF, 00V ±0% pf, 00V ±0% 0pF, 0V ±% Ceramic C0G - Ceramic XR - Ceramic COG - Ceramic COG - not 0nF, V ±0% 0nF,0%,V (0.Ω,,TAN-B nh) 0nF, 0V ±0% 0µF, 0V ±0% 00nF ±0%.µF, 0V ±0% n, 0V ±0% C,C C9 D,D0,D,D,D 0pF, ±% 0V, 0mA D,D 0kV Ceramic XR - Ceramic XR - Ceramic XR - not Ceramic XR - not Ceramic XR - Ceramic XR - not Ceramic COG - Small signal Schottky diode Transil for ESD protection - not CGAEC0GA J00AA CGAEANP0A0 J00AA ESDC0KTA- 00A0KTA CL0C00JBPNC CGAEXRE M00AC LMK0BBJ0MA HT GCMRHK AD CGAEC0GH J00AA BATJFILM ESDLINBJ D,D not ESDLINxx TDK Corporation TDK Corporation AVX Corporation AVX Corporation Samsung Electro- Mechanics America, Inc TDK TDK Corporation Taiyo Yuden Murata Electronics North America TDK Corporation DocID090 Rev /0

6 Bill of materials EVAL-OET00V Item Q.ty Reference Value Description Part Number Manufacturer 0kV 9 0 D,D D,D ESDCAN0-BWY Automotive dual-line Transil for ESDCAN-BLY ESD protection - provided in antistatic bag provided in antistatic bag provided in antistatic bag Automotive dual-line Transil for ESD protection ESDCAN0-BWY ESDCAN0-BLY ESDCANxx D V reverse SMD LED - red RED LED OSRAM D0 V reverse SMD LED - blue BLUE LED Lite-On D9 V reverse D,D V reverse D V reverse D V SMD LED - yellow SMD LED - green SMD LED - orange Transil Unidirectional YELLOW LED GREEN LED ORANGE LED SMTVAY D,D A,0V Schottky Diode PSL0-Y 9 J9,J 0 9 J,J,J,J,J,J,J,J 0,J Jumper CONN, 00V RIPLIN E, V way PCB terminal block way single row RIP Line (male),mm pitch for SOCKET J,J SWIM, V SWIM CONNECTOR J CONN, V INPUT CONNECTOR L,L Common Mode Choke L,L BEAD, V BEED INDUCTOR L µh, A ±0% SMD Power Inductor MKDSN./--, AK/Z Black OSRAM Lite-On Lite-On Phoenix Contact 0 ERNI DC0B ACTB-0-P- TL00 BMBA00AN ASSMAN N WSW CLIFF ELECTRONIC COMPONENTS TDK 0 WE TE Connectivity /0 DocID090 Rev

7 EVAL-OET00V Bill of materials Item Q.ty Reference Value Description Part Number Manufacturer P,P DB9 MALE CONNECTOR RIGHT ANGLE E-C009P-AJ Amphenol Q Power MOSFET NNF0L 9 0 R,R,R9,R,R,R,R,R0,R,R,R,R R,R0,R,R,R, R,R, R,R9,R,R,R, R9 R,R,R,R R,R R,R R0,R R,R,R,R0,R; R R,R0 R,R0 R,R 9 R,R 0 R9 R,R,R,R R,R R R,R0,R,R R9 R R9 0 Ω ±% not ±% Resistor - not 0k Resistor - not /W ±% K /W ±% 0 /W ±% K /W ±% 0K /W ±% /W ±% /W ±% M /W ±% 0K /W ±% k /W ±% 0 /W ±% /W ±% 0 /W ±% 0 /W ±% 00 /W ±% Resistor - not Resistor - not Panasonic.9k /W ±% Resistor ERJ-ENF9V Electronic Components 0.R ±0% THERMIOR PTC 0. OHM PTGLARRMB B0 Murata Electronics North America DocID090 Rev /0

8 Bill of materials EVAL-OET00V Item Q.ty Reference Value Description Part Number Manufacturer R 9 R 0 R0 SW,SW TP,TP,TP9,TP0,TP,TP,TP,TP,TP,TP,TP,TP,TP 9,TP0, TP,TP,TP,TP, TP,TP,TP, TP 0k /W ±%.k /W ±% /W ±% RESET MICRO SWITCH PCB Test point PAD 90- TE Connectivity 00-0 RS U,U TJA0T CAN transceiver TJA0T, NXP Semiconductors U,U TJA0T LIN transceiver TJA0T/0/C, NXP Semiconductors U,U,U,U0 U,U U MICRO SWITCH - not -bit Microcontroller Voltage regulator MAFTAY LFCDT-TRY smr00cc U Line filter BNX00-0 Murata 9 U Buck-boost IC A9A 0 U,U ESD protection USBLC-SCY U ESD protection ESDAVSCY Y,Y MHz (with socket) Crystal,M, 0PF,0PPM,- 0~0 degree, DIP, HC-9S - not HC-9S-B0QTA JFVNY Dist,Dist,Dist,Dist mm LCBSBM-0-0A RICHCO ESD_TP,ESD_TP,E SD_TP, ESD_TP,ESD_TP,E SD_TP Test Terminal Elettro components /0 DocID090 Rev

9 EVAL-OET00V Revision history Table : Document revision history Date Version Changes -Aug-0 Initial release. Bill of materials DocID090 Rev 9/0

10 EVAL-OET00V IMPORTANT NOTICE PLEASE READ CAREFULLY Microelectronics NV and its subsidiaries ( ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on products before placing orders. products are sold pursuant to s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of products and assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by herein. Resale of products with provisions different from the information set forth herein shall void any warranty granted by for such product. and the logo are trademarks of. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 0 Microelectronics All rights reserved 0/0 DocID090 Rev

STEVAL-IDP003V1. IO-Link industrial modular sensor board based on L6362A. Description. Features

STEVAL-IDP003V1. IO-Link industrial modular sensor board based on L6362A. Description. Features STEVAL-IDP00V IO-Link industrial modular sensor board based on LA Data brief Features Main supply voltage: V maximum STML0CZ microcontroller IO-Link PHY using the LA device for data communication with

More information

16 channel LED driver expansion board based on LED1642GW for STM32 Nucleo. Description

16 channel LED driver expansion board based on LED1642GW for STM32 Nucleo. Description channel D driver expansion board based on DGW for STM Nucleo Data brief Error detection Open D Shorted D Thermal shutdown Compatible with STM Nucleo board Equipped with Arduino UNO R connector RoHS compliant

More information

Qi MP-A10 15 W wireless charger TX evaluation kit based on STWBC-EP

Qi MP-A10 15 W wireless charger TX evaluation kit based on STWBC-EP STEVAL-ISB0V Qi MP-A0 W wireless charger TX evaluation kit based on STWBC-EP Data brief WPC Qi.. standard compliant Robust demodulation algorithm, with triple path (V, I, f) Foreign object detection (FOD)

More information

Smart home lighting based on HVLED815PF and SPSGRF. Description

Smart home lighting based on HVLED815PF and SPSGRF. Description STEVAL-ILL0V Smart home lighting based on HVLEDPF and SPSGRF Data brief Description The STEVAL-ILL0V evaluation board is an offline LED driver based on the HVLEDPF, coupled with Sub-GHz connectivity based

More information

STEVAL-ISB044V1. Data brief. Features. Description

STEVAL-ISB044V1. Data brief. Features. Description STEVAL-ISB0V Data brief Qi MP-A0 W wireless charger TX evaluation kit based on STWBC-EP Features STWBC-EP digital controller W output power Qi MP-A0 reference design WPC Qi.. standard compliant Robust

More information

EVLSTNRG-1KW. 1 kw SMPS digitally controlled multiphase interleaved converter using STNRG388A. Description. Features

EVLSTNRG-1KW. 1 kw SMPS digitally controlled multiphase interleaved converter using STNRG388A. Description. Features EVLSTNRG-KW kw SMPS digitally controlled multiphase interleaved converter using STNRGA Description Data brief Features Digital controller: STNRGA -phase interleaved DC/DC architecture Full load power:

More information

16 channel LED driver expansion board based on LED1642GW for STM32 Nucleo. Description

16 channel LED driver expansion board based on LED1642GW for STM32 Nucleo. Description X-NUCO-DA channel D driver expansion board based on DGW for STM Nucleo Data brief Error detection Open D Shorted D Thermal shutdown Compatible with STM Nucleo board Equipped with Arduino UNO R connector

More information

STEVAL-IDP004V1. IO-Link master multi-port evaluation board based on L6360. Description. Features

STEVAL-IDP004V1. IO-Link master multi-port evaluation board based on L6360. Description. Features STEVAIDP00V IO-Link master multi-port evaluation board based on L0 Data brief Features Main supply voltage V maximum L0 IO-Link master device RS- serial interface CAN serial interface USB interface DC/DC

More information

USB Power Delivery (Type-C PD) 45 W USB wall power adapter solution based on STCH02 and STUSB4700

USB Power Delivery (Type-C PD) 45 W USB wall power adapter solution based on STCH02 and STUSB4700 STEVL-USBPDH USB Power Delivery (Type-C PD) W USB wall power adapter solution based on STCH0 and STUSB00 Data brief Features USB wall power adapter input: VC to VC USB voltage output: V, V and V Current

More information

STSPIN32F0A advanced 3-phase BLDC driver with embedded STM32 MCU single shunt evaluation board. Description

STSPIN32F0A advanced 3-phase BLDC driver with embedded STM32 MCU single shunt evaluation board. Description STEVALSPIN0 STSPINF0A advanced phase BLDC driver with embedded STM MCU single shunt evaluation board Data brief Applications Smart manufacturing equipment Battery powered home appliances and pumps Fans

More information

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C

More information

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj Features TAB D 2 PAK 2 1 3 TAB 2 1 DPAK 3 AEC-Q101 qualified SCIS energy of 320 mj @ T J = 25 C Parts

More information

High brightness RGB LED array driver with local dimming and diagnostics based on the LED1642GW and STM32

High brightness RGB LED array driver with local dimming and diagnostics based on the LED1642GW and STM32 STEVAL-ILL0V High brightness RGB D array driver with local dimming and diagnostics based on the DGW and STM Data brief Features High brightness x RGB D matrix Complete hardware and software package Various

More information

STTH16L06C-Y. Automotive turbo 2 ultrafast high voltage rectifier. Description. Features

STTH16L06C-Y. Automotive turbo 2 ultrafast high voltage rectifier. Description. Features STTH16L6C-Y Automotive turbo 2 ultrafast high voltage rectifier Description Datasheet - production data A1 A2 K The STTH16L6C-Y is developed using ST s Turbo 2 6 V technology. It s specially suited for

More information

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel Automotive-grade 390 V internally clamped IGBT E SCIS 180 mj Features Datasheet - production data TAB DPAK 1 3 AEC-Q101 qualified 180 mj of avalanche energy @ T C = 150 C, L = 3 mh ESD gate-emitter protection

More information

Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5.

Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5. Features SOT23-5L Stable with low ESR ceramic capacitors Ultra low dropout voltage (0.12 V typ. at 50 ma load, 7 mv typ. at 1 ma load) Very low quiescent current (80 µa typ. at no load in on mode; max

More information

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V-7 650 V 25 mω 90 A Very high operating

More information

AN2970 Application note

AN2970 Application note Application note Principles of capacitive touch and proximity sensing technology The objective of this document is to present the principles of capacitive sensing and charge transfer used in STMicroelectronics

More information

Evaluates: MAX17681 for Isolated +15V or +12V Output Configuration. MAX17681 Evaluation Kit. General Description. Quick Start.

Evaluates: MAX17681 for Isolated +15V or +12V Output Configuration. MAX17681 Evaluation Kit. General Description. Quick Start. MAX78 Evaluation Kit Evaluates: MAX78 for Isolated +V or +V Output Configuration General Description The MAX78EVKITC is a fully assembled and tested circuit board that demonstrates the performance of the

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Features W flyback SMPS demonstration board for alarm system based on the L99 and STPNKZ Input voltage: Vin: Vac (f: Hz) Output voltages: Vout =. V, Iout = A Vout = V, Iout= ma Vout =. V, Iout = ma (.9

More information

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications Very low quiescent current dual voltage regulator Description Datasheet - production data Features DFN8 (5x6 mm) V O1 : fixed V O2 : adjustable from 1.25 to V I - V DROP Guaranteed current of output 1:

More information

LD A high PSRR ultra low drop linear regulator with reverse current protection. Datasheet. Features. Applications.

LD A high PSRR ultra low drop linear regulator with reverse current protection. Datasheet. Features. Applications. Datasheet 2 A high PSRR ultra low drop linear regulator with reverse current protection Features Input voltage from 1.25 V to 6. V Ultra low drop: 13 mv (typ.) at 2 A load 1 % output accuracy at 25 C,

More information

STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters

More information

STEVAL-FCU001V1. Flight controller unit evaluation board for toy drones. Description. Features

STEVAL-FCU001V1. Flight controller unit evaluation board for toy drones. Description. Features STEVAL-FCU00V Flight controller unit evaluation board for toy drones Data brief STLNLLH - N-channel 0 V, A STripFET H Power MOSFET STC0-00 ma Standalone linear Li-Ion battery charger RoHS compliant Features

More information

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications. Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature

More information

STPS1045B. Power Schottky rectifier. Description. Features

STPS1045B. Power Schottky rectifier. Description. Features Power Schottky rectifier Datasheet production data Description High voltage Schottky rectifier suited for switch mode power supply and other power converters. Packaged in DPAK, this device is intended

More information

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features. Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged

More information

Description. Table 1. Device summary (1) Lead finish

Description. Table 1. Device summary (1) Lead finish Aerospace 45 V power Schottky rectifier Datasheet - production data Description A K K his power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products.

More information

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant Datasheet 100 V, 30 A power Schottky rectifier Features Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

More information

STTH10R04. High efficiency rectifier. Description. Features

STTH10R04. High efficiency rectifier. Description. Features STTH1R4 High efficiency rectifier Datasheet - production data Features K A A NC D 2 PAK K Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature ECOPACK

More information

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant Datasheet 60 V - 1 power Schottky rectifier K Features Negligible switching losses K SM K DO-41 Low forward voltage drop Surface mount miniature packages valanche rated ECOPCK 2 compliant K STmite flat

More information

VNL5090N3-E, VNL5090S5-E

VNL5090N3-E, VNL5090S5-E OMNIFET III fully protected low-side driver Datasheet - production data 2 Features Type V clamp R DS(on) I D VNL5090N3-E VNL5090S5-E 1 2 SOT-223 3 SO-8 41 V 90 mω 13 A Automotive qualified Drain current:

More information

STPS2H V power Schottky rectifier. Datasheet. Features. Description. Negligible switching losses

STPS2H V power Schottky rectifier. Datasheet. Features. Description. Negligible switching losses Datasheet 100 V power Schottky rectifier Features A Negligible switching losses A High junction temperature capability Low leakage current K SMA K SMB Good trade-off between leakage current and forward

More information

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features STTH1LCD6 Turbo 2 ultrafast - high voltage rectifier for flat panel displays Description Datasheet - production data The STTH1LCD6 uses ST Turbo 2 technology. This device is suited for power applications

More information

STTH1R04. Ultrafast recovery diode. Description. Features

STTH1R04. Ultrafast recovery diode. Description. Features STTH1R4 Ultrafast recovery diode Datasheet - production data DO-41 STTH1R4 A K DO-15 STTH1R4Q Band indicates cathode side. Description The STTH1R4 series uses ST's new 4 V planar Pt doping technology.

More information

LDL212. High PSRR, low drop linear regulator IC. Datasheet. Features. Applications. Description

LDL212. High PSRR, low drop linear regulator IC. Datasheet. Features. Applications. Description Datasheet High PSRR, low drop linear regulator IC Features Input voltage from 2.5 V to 18 V 2 V AMR Any fixed output voltages, from 1.2 V to 12 V in 1 mv steps (from 1.2 V to 6.6 V in 5 mv steps) available

More information

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH8R06, which uses ST Turbo 2 600 V technology, is specially suited as boost diode in continuous mode power factor

More information

AN922 Application note

AN922 Application note Application note Using a Super Cap to back up the M41T56, M41T00 M41T11, M41T81, M41T94, and M41ST84W (16-pin) Introduction The M41T56, M41T00, M41T11, M41T81, M41T94, and M41ST84W (16-pin) real-time clocks

More information

STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH5L06 is developed using St's Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in

More information

T610T-8FP. 6 A logic level Triac. Description. Features. Applications

T610T-8FP. 6 A logic level Triac. Description. Features. Applications 6 A logic level Triac Description Datasheet production data Available in through-hole fullpack package, the Triac can be used for the on/off or phase angle control function in general purpose AC switching.

More information

Evaluates: MAX17681 for Isolated +7V or +5V Output Configuration. MAX17681 Evaluation Kit. General Description. Quick Start.

Evaluates: MAX17681 for Isolated +7V or +5V Output Configuration. MAX17681 Evaluation Kit. General Description. Quick Start. MAX768 Evaluation Kit Evaluates: MAX768 for Isolated +7V or +V Output Configuration General Description The MAX768EVKITD is a fully assembled and tested circuit board that demonstrates the performance

More information

A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features.

A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features. Datasheet ACPACK 1 sixpack topology, 65 V, 5 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 1 ACPACK 1 power module DBC Cu Al 2 O 3 Cu Sixpack topology 65 V, 5 A IGBTs and diodes

More information

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake

More information

STTH15L06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH15L06. Turbo 2 ultrafast high voltage rectifier. Description. Features STTH15L6 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description K A K A The STTH15L6, which is using ST Turbo 2 6 V technology, is specially suited for use in switching power

More information

ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 2 converter inverter brake, 12 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake

More information

ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 1 converter inverter brake, 12 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 1 ACEPACK 1 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

More information

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology

More information

LD29300xx. 3 A, very low drop voltage regulators. Features. Description

LD29300xx. 3 A, very low drop voltage regulators. Features. Description 3 A, very low drop voltage regulators Features Very low dropout voltage (Typ. 0.4 at 3 A) Guaranteed output current up to 3 A Fixed voltage with ± 1 % tolerance at 25 C Internal current and thermal limit

More information

Order codes Part numbers DPAK (tape and reel) PPAK (tape and reel)

Order codes Part numbers DPAK (tape and reel) PPAK (tape and reel) 800 ma fixed and adjustable output very low drop voltage regulator Features ery low dropout voltage (typ. 0.4 at 800 ma) Guaranteed output current up to 800 ma Fixed and adjustable output voltage (± 1

More information

STTH6006W. Turbo 2 ultrafast - high voltage rectifier. Features and benefits. Description. Main product characteristics

STTH6006W. Turbo 2 ultrafast - high voltage rectifier. Features and benefits. Description. Main product characteristics Turbo 2 ultrafast - high voltage rectifier Table 1. Main product characteristics I (AV) 6 A A K V RRM 6 V T j 175 C V (typ) 1.1 V t rr (max) 6 ns A eatures and benefits Ultrafast switching Low reverse

More information

STM1831. Voltage detector with sense input and external delay capacitor. Features. Applications

STM1831. Voltage detector with sense input and external delay capacitor. Features. Applications Voltage detector with sense input and external delay capacitor Features Voltage monitored on separate sense input V SEN Factory-trimmed voltage thresholds in 100 mv increments from 1.6 V to 5.7 V ±2% voltage

More information

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced

More information

STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB

STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB Ultrafast recovery diode Main product characteristics I F(AV) 2 X 8 A A1 A2 K V RRM 4 V T j 175 C V F (typ) t rr (typ).9 V 25 ns A1 K A2 A1 A2 K Features and benefits TO-22AB T TO-22FPAB FP Very low switching

More information

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted

More information

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)

More information

60 V, 0.3 A N-channel Trench MOSFET

60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted

More information

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1 STTH61R4TV Ultrafast recovery diode Main product characteristics I F(AV) 2 x 3 A V RRM 4 V T j V F (typ) 15 C.95 V t rr (typ) 24 ns Features and benefits Ultrafast Very low switching losses High frequency

More information

STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes

STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes STTH31 Ultrafast recovery - 1 V diode Main product characteristics I (AV) 3 A V RRM 1 V T j 175 C V (typ) 1.15 V t rr (typ) 55 ns K A K eatures and benefits Ultrafast, soft recovery Very low conduction

More information

L78LxxAB L78LxxAC - L78LxxC

L78LxxAB L78LxxAC - L78LxxC L78LxxAB L78LxxAC - L78LxxC Positive voltage regulators Features Output current up to 100 s of 3.3; 5; 6; 8; 9; 10; 12; 15; 18; 24 Thermal overload protection Short circuit protection No external components

More information

Quad bus transceiver; 3-state. The output enable inputs (OEA and OEB) can be used to isolate the buses.

Quad bus transceiver; 3-state. The output enable inputs (OEA and OEB) can be used to isolate the buses. Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance

More information

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

More information

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Rev. 01 11 December 2008 Objective data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

More information

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability

More information

ESDAULC5-1BF4. Low clamping and ultra low capacitance single line bidirectional ESD protection. Applications. Description.

ESDAULC5-1BF4. Low clamping and ultra low capacitance single line bidirectional ESD protection. Applications. Description. Low clamping and ultra low capacitance single line bidirectional ESD protection Applications Datasheet - production data Where transient over voltage protection in ESD sensitive equipment is required,

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DO-15 DO-201AD STTH3R04Q STTH3R04

DO-15 DO-201AD STTH3R04Q STTH3R04 STTH3R4 Ultrafast recovery diode Features Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R4 series uses ST's new 4 V planar Pt doping

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

STEVAL-MKI109V2. emotion: ST MEMS adapters motherboard based on the STM32F103RE compatible with all ST MEMS adapters. Features.

STEVAL-MKI109V2. emotion: ST MEMS adapters motherboard based on the STM32F103RE compatible with all ST MEMS adapters. Features. EVAL-MKI0V emotion: MEMS adapters motherboard based on the MFE compatible with all MEMS adapters Data brief Features Compatible with all available MEMS adapter boards Controlled by the MFET highperformance

More information

VNH9013Y. Automotive integrated H-bridge. Description. Features

VNH9013Y. Automotive integrated H-bridge. Description. Features Automotive integrated H-bridge Features PowerSSO-36 TP Description Datasheet - production data The device is an automotive integrated H-bridge intended for a wide range of automotive applications driving

More information

Silicon N-channel dual gate MOS-FET IMPORTANT NOTICE. use

Silicon N-channel dual gate MOS-FET IMPORTANT NOTICE.  use Rev. 4 2 November 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

More information

AN420 Application note

AN420 Application note Application note Expanding A/D resolution of the ST6 A/D converter Introduction Occasionally the analog signal provided by external sensors require an Analog to Digital conversion with a resolution of

More information

Evaluation Board for 8-/10-/12-Bit, Parallel Input, Dual-Channel, Current Output DAC EVAL-AD5428/AD5440/AD5447EB

Evaluation Board for 8-/10-/12-Bit, Parallel Input, Dual-Channel, Current Output DAC EVAL-AD5428/AD5440/AD5447EB Evaluation Board for 8-/0-/-Bit, Parallel Input, Dual-Channel, Current Output DAC EVAL-AD58/AD50/AD5EB FEATURES Operates from dual ± V and 5 V supplies On-board reference and output amplifiers Direct hookup

More information

Dual 3-channel analog multiplexer/demultiplexer with supplementary switches

Dual 3-channel analog multiplexer/demultiplexer with supplementary switches with supplementary switches Rev. 03 16 December 2009 Product data sheet 1. General description 2. Features 3. Applications 4. Ordering information The is a dual 3-channel analog multiplexer/demultiplexer

More information

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP Ultrafast recovery - high voltage diode Main product characteristics I F(AV) V RRM T j V F (typ) t rr (typ) Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High

More information

Reference designs for IR3883

Reference designs for IR3883 ER_201612_PL17_01 About this document Scope and purpose The IR3883 is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 3mm X 3 mm Power QFN package.

More information

Ultra-Small Footprint N-Channel FemtoFET MOSFET Test EVM

Ultra-Small Footprint N-Channel FemtoFET MOSFET Test EVM User's Guide SLPU007 December 07 Ultra-Small Footprint N-Channel FemtoFET MOSFET Test EVM Contents Introduction... Description... Electrical Performance Specifications... 4 Schematic... 4 Test Setup....

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

Maxim Integrated Products 1

Maxim Integrated Products 1 9-879; Rev 0; /00 MAX70 Evaluation Kit General Description The MAX70 evaluation kit (EV kit) combines Maxim s multiprotocol clock/data transceiver (MAX70), control transceiver (MAX7), and cable terminator

More information

Master Development System Programming Dock Board Data Guide

Master Development System Programming Dock Board Data Guide Master Development System Programming Dock Board Data Guide ! Warning: Some customers may want Linx radio frequency ( RF ) products to control machinery or devices remotely, including machinery or devices

More information

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

The 74LV32 provides a quad 2-input OR function.

The 74LV32 provides a quad 2-input OR function. Rev. 03 9 November 2007 Product data sheet. General description 2. Features 3. Ordering information The is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC32 and 74HCT32.

More information

8-bit binary counter with output register; 3-state

8-bit binary counter with output register; 3-state Rev. 01 30 March 2005 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with Low power Schottky TTL (LSTTL). It

More information

Application information Mode of operation f V DS P L G p η D (MHz) (V) (W) (db) (%) CW pulsed RF

Application information Mode of operation f V DS P L G p η D (MHz) (V) (W) (db) (%) CW pulsed RF Rev. 02 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table

More information

The 74LV08 provides a quad 2-input AND function.

The 74LV08 provides a quad 2-input AND function. Quad 2-input ND gate Rev. 03 6 pril 2009 Product data sheet. General description 2. Features 3. Ordering information The is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC0

More information

74HC245; 74HCT245. Octal bus tranceiver; 3-state. The 74HC245; 74HCT245 is similar to the 74HC640; 74HCT640 but has true (non-inverting) outputs.

74HC245; 74HCT245. Octal bus tranceiver; 3-state. The 74HC245; 74HCT245 is similar to the 74HC640; 74HCT640 but has true (non-inverting) outputs. Rev. 03 31 January 2005 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with Low-Power Schottky TTL (LSTTL).

More information

74HC General description. 2. Features. 3-to-8 line decoder, demultiplexer with address latches; inverting

74HC General description. 2. Features. 3-to-8 line decoder, demultiplexer with address latches; inverting 3-to-8 line decoder, demultiplexer with address latches; inverting Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible

More information

Octal bus transceiver; 3-state

Octal bus transceiver; 3-state Rev. 02 7 January 2008 Product data sheet. General description 2. Features 3. Ordering information The is an octal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive

More information

Linear Regulator Application Information

Linear Regulator Application Information Linear Regulator Application Information IC Product Name BD00IA5WEFJ Topology LDO Linear Regulator Voltage source Input Output 1 2.4V to 5.5V 1.0V, 500mA *1 2 2.4V to 5.5V 1.2V, 500mA *1 3 2.4V to 5.5V

More information

STPS20M60S. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop High frequency operation

STPS20M60S. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop High frequency operation Power Schottky rectifier Features High current capability valanche rated Low forward voltage drop High frequency operation Description The is a single Schottky diode, suited for high frequency switch mode

More information

Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 150 V I F(RMS) RMS forward voltage 15 A

Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 150 V I F(RMS) RMS forward voltage 15 A Power Schottky rectifier Main product characteristics I F(AV) V RRM j (max) V F (max) 3 A 15 V 175 C.67 V Description 15 V Power Schottky rectifier are suited for switch mode power supplies on up to 24

More information

Low-power dual Schmitt trigger inverter

Low-power dual Schmitt trigger inverter Rev. 1 9 October 2014 Product data sheet 1. General description The is a dual inverter with Schmitt-trigger inputs. It transforms slowly changing input signals into sharply defined, jitter-free output

More information

STTH3002. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes K DOP3I STTH3002PI DO-247 STTH3002W

STTH3002. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes K DOP3I STTH3002PI DO-247 STTH3002W Ultrafast recovery diode Main product characteristics I F(V) 3 K V RRM 2 V T j (max) 175 C V F (typ).77 V t rr (typ) 22 ns Features and benefits Very low conduction losses Negligible switching losses K

More information

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1. M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.

More information

74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger

74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger Rev. 4 26 January 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a dual negative edge triggered JK flip-flop featuring individual J and K inputs,

More information

4-bit magnitude comparator

4-bit magnitude comparator Rev. 6 21 November 2011 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a that compares two 4-bit words, A and B, and determines whether A is greater than

More information

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2

More information

BLA6H LDMOS avionics power transistor

BLA6H LDMOS avionics power transistor Rev. 1 22 April 21 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 13 MHz to 19 MHz range. Table 1. Test information

More information