N-Channel 20-V (D-S) MOSFET

Transcription

1 N-Channl -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).7 at V GS =.5 V 8.3 at V GS =.5 V 8 9 nc. at V GS =.8 V 8 FEATURES Halogn-f Accodng to IEC 69-- fnton TnchFET Pow MOSFET Complant to RoHS ctv /95/EC APPLICATIONS Load Swtch fo Potabl Applcatons Load Swtch fo Low Voltag Bus TSOP-6 Top Vw 6 (,, 5, 6) 3 mm G 3 5 Makng Cod AF XXX Pat # Cod.85 mm Odng Infomaton: -T-E3 (Lad (Pb)-f) -T-GE3 (Lad (Pb)-f and Halogn-f) S Lot Tacablty and at Cod G (3) () S N-Channl MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unlss othws notd Paamt Symbol Lmt Unt an-souc Voltag V S V Gat-Souc Voltag V GS ± 8 T C = 5 C 8 a T Contnuous an Cunt (T J = 5 C) C = 7 C 7. I T A = 5 C 6.7 b, c T A = 7 C 5. b, c A Pulsd an Cunt I M T Contnuous Souc-an od Cunt C = 5 C.9 I T S A = 5 C.7 b, c T C = 5 C 3.5 T Maxmum Pow sspaton C = 7 C. P W T A = 5 C b, c T A = 7 C.3 b, c Opatng Juncton and Stoag Tmpatu Rang T J, T stg - 55 to 5 C Soldng Rcommndatons (Pak Tmpatu) d, 6 THERMAL RESISTANCE RATINGS Paamt Symbol Typcal Maxmum Unt Maxmum Juncton-to-Ambnt b, d t 5 s R thja Maxmum Juncton-to-Foot (an) Stady Stat R thjf 3 36 C/W Nots: a. Packag lmtd b. Sufac Mountd on " x " FR boad. c. t = 5 s. d. Maxmum und stady stat condtons s C/W. ocumnt Numb: 7 S9-98-Rv. C, -Aug-9

2 SPECIFICATIONS T J = 5 C, unlss othws notd Paamt Symbol Tst Condtons Mn. Typ. Max. Unt Statc an-souc Bakdown Voltag V S V GS = V, I = 5 µa V V S Tmpatu Coffcnt ΔV S /T J.5 I = 5 µa V GS(th) Tmpatu Coffcnt ΔV GS(th) /T J -.9 mv/ C Gat-Souc Thshold Voltag V GS(th) V S = V GS, I = 5 µa.5. V Gat-Souc Lakag I GSS V S = V, V GS = ± 8 V ± ns V S = V, V GS = V I Zo Gat Voltag an Cunt SS µa V S = V, V GS = V, T J = 7 C On-Stat an Cunt a I (on) V S 5 V, V GS =.5 V A an-souc On-Stat Rsstanc a R S(on) V GS =.5 V, I =.7 A.7.3 Ω V GS =.5 V, I = 5. A.3.7 V GS =.8 V, I =.5 A.33. Fowad Tansconductanc a g fs V S = V, I = 5. A S ynamc b Input Capactanc C ss 86 Output Capactanc C oss V S = V, V GS = V, f = MHz pf Rvs Tansf Capactanc C ss 65 V S = V, V GS = 8 V, I = 8 A 6 Total Gat Chag Q g nc Gat-Souc Chag Q gs V S = V, V GS =.5 V, I = 8 A. Gat-an Chag Q gd. Gat Rsstanc R g f = MHz 3. Ω Tun-On lay Tm t d(on) 7 5 Rs Tm t V = V, R L =.9 Ω 6 9 Tun-Off lay Tm t d(off) I 5. A, V GEN =.5 V, R g = Ω 5 Fall Tm t f 6 ns Tun-On lay Tm t d(on) 5 Rs Tm t V = V, R L =.9 Ω 5 5 Tun-Off lay Tm t d(off) I 5. A, V GEN = 8 V, R g = Ω 5 Fall Tm t f 5 an-souc Body od Chaactstcs Contnuous Souc-an od Cunt I S T C = 5 C 8 Puls od Fowad Cunt I SM A Body od Voltag V S I S = 5. A, V GS = V.8. V Body od Rvs Rcovy Tm t ns Body od Rvs Rcovy Chag Q 9 nc I F = 5. A, di/dt = A/µs, T J = 5 C Rvs Rcovy Fall Tm t a ns Rvs Rcovy Rs Tm t b 8 Nots: a. Puls tst; puls wdth 3 µs, duty cycl % b. Guaantd by dsgn, not subjct to poducton tstng. Stsss byond thos lstd und Absolut Maxmum Ratngs may caus pmannt damag to th dvc. Ths a stss atngs only, and functonal opaton of th dvc at ths o any oth condtons byond thos ndcatd n th opatonal sctons of th spcfcatons s not mpld. Exposu to absolut maxmum atng condtons fo xtndd pods may affct dvc lablty. ocumnt Numb: 7 S9-98-Rv. C, -Aug-9

3 TYPICAL CHARACTERISTICS 5 C, unlss othws notd 5 V GS = 5 V thu V (A) t 8 (A) an Cunt ( l t I V I - an Cunt 6 T C = 5 C 5 C - 55 C V V S - an-to-souc Voltag (V) Output Chaactstcs V GS - Gat-to-Souc Voltag (V) Tansf Chaactstcs.6 V GS =.8 V a n c (Ω) s R S(on) - O n - R s.5..3 V GS =.5 V Capactanc (pf) C C ss C oss V GS =.5 V. 5 5 I - an Cunt (A) On-Rsstanc vs. an Cunt and Gat Voltag 8 C ss 8 6 V S - an-to-souc Voltag (V) Capactanc.8 Gat-to-Souc Voltag (V) - V GS V S = V I = 8 A V S = 6 V I = 8 A R S o n ) - O n - R s s a n c N m a z d ) o ( I = 5. A Q g - Total Gat Chag (nc) Gat Chag T J - Juncton Tmpatu ( C) On-Rsstanc vs. Juncton Tmpatu ocumnt Numb: 7 S9-98-Rv. C, -Aug-9 3

4 t TYPICAL CHARACTERISTICS 5 C, unlss othws notd.8 Souc Cunt (A) - I S T J = 5 C T J = 5 C a n c (Ω) s R S(on) -O n - R s.7 I = 5. A 5 C I = 5. A 5 C V S - Souc-to-an Voltag (V) Souc-an od Fowad Voltag V GS - Gat-to-Souc Voltag (V) On-Rsstanc vs. Gat-to-Souc Voltag I = 5 µa V GS(th) (V).6.5. P o w ( W ) T J - Tmpatu ( C) Thshold Voltag Tm (s) Sngl Puls Pow (Juncton-to-Ambnt) ) t ( A Lmtd by R S(on) * n C u n a ms ms I -. T A = 5 C Sngl Puls ms s s C. BVSS Lmtd. V S - an-to-souc Voltag (V) * V GS mnmum V GS at whch R S(on) s spcfd Saf Opatng Aa, Juncton-to-Ambnt ocumnt Numb: 7 S9-98-Rv. C, -Aug-9

5 TYPICAL CHARACTERISTICS 5 C, unlss othws notd ) A t ( n 8 6 u n C a Packag Lmtd o n ( W ) 3 p a s s w t P o Foot (an) Tmpatu ( C) Cunt atng* Foot (an) Tmpatu ( C) Pow atng * Th pow dsspaton P s basd on T J(max.) = 5 C, usng juncton-to-cas thmal sstanc, and s mo usful n sttlng th upp dsspaton lmt fo cass wh addtonal hatsnkng s usd. It s usd to dtmn th cunt atng, whn ths atng falls blow th packag lmt. ocumnt Numb: 7 S9-98-Rv. C, -Aug-9 5

6 l f f t t l f f TYPICAL CHARACTERISTICS 5 C, unlss othws notd N o m a z d E c v T a n s n t T h m a l I m p d a n c uty Cycl =.5. Nots:.. P M.5 t t t.. uty Cycl, = t. P Unt Bas = R thja = 9 C/W 3. T Sngl Puls JM - T A = P M Z (t) thja. Sufac Mountd Squa Wav Puls uaton (s) Nomalzd Thmal Tansnt Impdanc, Juncton-to-Ambnt N o m a z d E T a n s n t T h m a l I m p d a n c v c. uty Cycl = Sngl Puls Squa Wav Puls uaton (s) Nomalzd Thmal Tansnt Impdanc, Juncton-to-Foot - mantans woldwd manufactung capablty. Poducts may b manufactud at on of sval qualfd locatons. Rlablty data fo Slcon Tchnology and Packag Rlablty psnt a compost of all qualfd locatons. Fo latd documnts such as packag/tap dawngs, pat makng, and lablty data, s /ppg?7. 6 ocumnt Numb: 7 S9-98-Rv. C, -Aug-9

7 Packag Infomaton TSOP: 5/6 LEA JEEC Pat Numb: MO-93C E E E E 3 3 -B- -B- b.5 M C B A b.5 M C B A 5-LEA TSOP 6-LEA TSOP -A- R x.7 Rf c A A R L Gaug Plan.8 C -C- A Satng Plan x (L ) L Satng Plan MILLIMETERS INCHES m Mn Nom Max Mn Nom Max A A A b c E E BSC.37 BSC L L.6 Rf. Rf L.5 BSC. BSC R Nom 7 Nom ECN: C-6593-Rv. I, 8-c-6 WG: 55 ocumnt Numb: 7 8-c-6

8 AN83 Mountng LITTLE FOOT TSOP-6 Pow MOSFETs Sufac mountd pow MOSFET packagng has bn basd on ntgatd ccut and small sgnal packags. Thos packags hav bn modfd to povd th mpovmnts n hat tansf qud by pow MOSFETs. Ladfam matals and dsgn, moldng compounds, and d attach matals hav bn changd. What has mand th sam s th footpnt of th packags. Th bass of th pad dsgn fo sufac mountd pow MOSFET s th basc footpnt fo th packag. Fo th TSOP-6 packag outln dawng s and s fo th mnmum pad footpnt. In convtng th footpnt to th pad st fo a pow MOSFET, you must mmb that not only do you want to mak lctcal conncton to th packag, but you must mad thmal conncton and povd a mans to daw hat fom th packag, and mov t away fom th packag. In th cas of th TSOP-6 packag, th lctcal connctons a vy smpl. Pns,, 5, and 6 a th dan of th MOSFET and a connctd togth. Fo a small sgnal dvc o ntgatd ccut, typcal connctons would b mad wth tacs that a. nchs wd. Snc th dan pns sv th addtonal functon of povdng th thmal conncton to th packag, ths lvl of conncton s nadquat. Th total coss scton of th copp may b adquat to cay th cunt qud fo th applcaton, but t psnts a lag thmal mpdanc. Also, hat spads n a ccula fashon fom th hat souc. In ths cas th dan pns a th hat soucs whn lookng at hat spad on th PC boad. Snc sufac mountd packags a small, and flow soldng s th most common fom of soldng fo sufac mount componnts, thmal connctons fom th plana copp to th pads hav not bn usd. Evn f addtonal plana copp aa s usd, th should b no poblms n th soldng pocss. Th actual sold connctons a dfnd by th sold mask opnngs. By combnng th basc footpnt wth th copp plan on th dan pns, th sold mask gnaton occus automatcally. A fnal tm to kp n mnd s th wdth of th pow tacs. Th absolut mnmum pow tac wdth must b dtmnd by th amount of cunt t has to cay. Fo thmal asons, ths mnmum wdth should b at last. nchs. Th us of wd tacs connctd to th dan plan povds a low mpdanc path fo hat to mov away fom th dvc. REFLOW SOLERING sufac-mount packags mt sold flow lablty qumnts. vcs a subjctd to sold flow as a tst pcondtonng and a thn lablty-tstd usng tmpatu cycl, bas humdty, HAST, o pssu pot. Th sold flow tmpatu pofl usd, and th tmpatus and tm duaton, a shown n Fgus and 3. Fgu shows th copp spadng commndd footpnt fo th TSOP-6 packag. Ths pattn shows th statng pont fo utlzng th boad aa avalabl fo th hat spadng copp. To cat ths pattn, a plan of copp ovlays th basc pattn on pns,,5, and 6. Th copp plan conncts th dan pns lctcally, but mo mpotantly povds plana copp to daw hat fom th dan lads and stat th pocss of spadng th hat so t can b dsspatd nto th ambnt a. Notc that th plana copp s shapd lk a T to mov hat away fom th dan lads n all dctons. Ths pattn uss all th avalabl aa undnath th body fo ths pupos Ramp-Up Rat 55 5 C Tmpatu Abov 8 C +6 C/Scond Maxmum Sconds Maxmum 7 8 Sconds.6.65 Maxmum Tmpatu Tm at Maxmum Tmpatu +5/ C Sconds Ramp-own Rat +6 C/Scond Maxmum FIGURE. Rcommndd Copp Spadng Footpnt FIGURE. Sold Rflow Tmpatu Pofl ocumnt Numb: Fb-

9 AN C s (max) C/s (max) 3-6 C/s (max) 7 C 7 C 3 C/s (max) 6- s (mn) P-Hatng Zon 6 s (max) Rflow Zon Maxmum pak tmpatu at C s allowd. FIGURE 3. Sold Rflow Tmpatu and Tm uatons THERMAL PERFORMANCE A basc masu of a dvc s thmal pfomanc s th juncton-to-cas thmal sstanc, R jc, o th juncton-to-foot thmal sstanc, R jf. Ths paamt s masud fo th dvc mountd to an nfnt hat snk and s thfo a chaactzaton of th dvc only, n oth wods, ndpndnt of th popts of th objct to whch th dvc s mountd. Tabl shows th thmal pfomanc of th TSOP-6. TABLE. Equvalnt Stady Stat Pfomanc TSOP-6 Thmal Rsstanc R jf 3 C/W S(on) On-Rsstanc (Nomalzd) On-Rsstanc vs. Juncton Tmpatu V GS =.5 V I = 6. A SYSTEM AN ELECTRICAL IMPACT OF TSOP-6 In any dsgn, on must tak nto account th chang n MOSFET S(on) wth tmpatu (Fgu ) T J Juncton Tmpatu ( C) FIGURE. S33V ocumnt Numb: Fb-

10 Applcaton Not 86 RECOMMENE MINIMUM PAS FOR TSOP-6.99 (.5) APPLICATION NOTE.8 (.699).9 (3.3).6 (.66).39 (.). (.58).9 (.93) Rcommndd Mnmum Pads mnsons n Inchs/(mm) Rtun to Indx Rtun to Indx ocumnt Numb: 76 6 Rvson: -Jan-8

11 Lgal sclam Notc Vshay sclam ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vshay Inttchnology, Inc., ts afflats, agnts, and mploys, and all psons actng on ts o th bhalf (collctvly, Vshay ), dsclam any and all lablty fo any os, naccuacs o ncompltnss contand n any datasht o n any oth dsclosu latng to any poduct. Vshay maks no waanty, psntaton o guaant gadng th sutablty of th poducts fo any patcula pupos o th contnung poducton of any poduct. To th maxmum xtnt pmttd by applcabl law, Vshay dsclams () any and all lablty asng out of th applcaton o us of any poduct, () any and all lablty, ncludng wthout lmtaton spcal, consquntal o ncdntal damags, and () any and all mpld waants, ncludng waants of ftnss fo patcula pupos, non-nfngmnt and mchantablty. Statmnts gadng th sutablty of poducts fo ctan typs of applcatons a basd on Vshay s knowldg of typcal qumnts that a oftn placd on Vshay poducts n gnc applcatons. Such statmnts a not bndng statmnts about th sutablty of poducts fo a patcula applcaton. It s th custom s sponsblty to valdat that a patcula poduct wth th popts dscbd n th poduct spcfcaton s sutabl fo us n a patcula applcaton. Paamts povdd n datashts and / o spcfcatons may vay n dffnt applcatons and pfomanc may vay ov tm. All opatng paamts, ncludng typcal paamts, must b valdatd fo ach custom applcaton by th custom s tchncal xpts. Poduct spcfcatons do not xpand o othws modfy Vshay s tms and condtons of puchas, ncludng but not lmtd to th waanty xpssd thn. Excpt as xpssly ndcatd n wtng, Vshay poducts a not dsgnd fo us n mdcal, lf-savng, o lf-sustanng applcatons o fo any oth applcaton n whch th falu of th Vshay poduct could sult n psonal njuy o dath. Customs usng o sllng Vshay poducts not xpssly ndcatd fo us n such applcatons do so at th own sk. Plas contact authozd Vshay psonnl to obtan wttn tms and condtons gadng poducts dsgnd fo such applcatons. No lcns, xpss o mpld, by stoppl o othws, to any ntllctual popty ghts s gantd by ths documnt o by any conduct of Vshay. Poduct nams and makngs notd hn may b tadmaks of th spctv owns. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVE Rvson: 8-Fb-7 ocumnt Numb: 9