Index. annealing temperature 236, 238, 250, 310, , , 491, 691

Transcription

1 Index Abbe s diffraction limit 42 absorption coefficient 96 97, , 128 access device 436, 599, 604, 607, 615 access transistor , , 596, 603, 606 activation energy 215, , 411, 478, 496, 502, 544 AFM, see atomic force microscope Ag, see silver Ag-doped Si 98, 102, 104, 109, 111 Ag doped Si thin films 109 Ag nanoparticles 102, alloy films , 482 amorphization , , 221, 223, amorphous chalcogenide films 464 amorphous films 490, 497, 504, 531 as-deposited 174, 244, 545 amorphous Ge 186, transient reflectivity of amorphous GeSbTe, as-deposited , 201, 205 amorphous GeSbTe films 547 amorphous GeTe amorphous Sb , 484, 502 amorphous semiconductors 464 amorphous Si 157, 489, 493, 495 amorphous structure, ring-shaped 497 anisotropy, high magnetocrystalline 690, 696 annealing temperature 236, 238, 250, 310, , , 491, 691 apodizer areal density 72, 260, 679, 682, 687, 695, array access devices , 601 array architecture 437, , 445, 448 array bias array layout array transistor 598, 603 recessed channel 598 spherical 602 atomic arrangement , , 642 atomic force microscope (AFM) 244, 547, 683, 685 BaTiO 3 634, 636, 643, 647, , 667 BD, see bidirectional diode; also see Blu-ray disk BD-ROM 131, , BD-ROM mastering 134, 138, 151, 162 bias fields , 301 strong strong built-in 301 bias voltages , 441 biased storage layers 336 bidirectional diode (BD) 365, 371, 376, 378, 445 bidirectional diode, curve of binary apodizer 25 26, 28 29, 31 binary optics 24, 26 29, 31, 33, 35

2 708 Index bipolar junction transistor (BJT) 364, 371, 424, , , 529 bit cells bit line (BL) , , , 373, , 423, 427, 434, , 442, , , 597, 604, bit line direction , 604 bit line voltage 415, BJT, see bipolar junction transistor BL, see bit line Blu-ray disk (BD) 70, , 144, 163, , 219, 465 BNL, see buried N + layer buried N + layer (BNL) 511, 513 buried word line array devices 602 capacitance , 602, 606, 617, 644, 649 capacitor 282, 594, , , , 635, 639, 648, , 665, 667 carbon nanotube electrode 538 CBRAM, see conductive bridge RAM CCD, see charge-coupled device CD, see compact disk cell capacitor 655, 657, 663 cell design 514, 519, cell resistance 419, 426, 431, 540, 551 cell resistance switch 426 cell structure 368, 440, , 541, 551, 629 cell, floating body 608 chalcogenide 173, 381, 465, , 475, 483, 529, 547 chalcogenide layer chalcogenide material 171, 464, 466, 476, 542, 550 chalcogenide phase-change film charge-coupled device (CCD) 183 CIMS, see current-induced magnetization switching CMOS, see complementary metal oxide semiconductor CMOS process, standard 436, 510 CMOS transistor device CMOS transistor coercive field 287, 637, 639, 641, , 658 coercivity , 689, 692, coherent phonon spectroscopy (CPS) , 188, 505 compact disk (CD) 70, 92, , 259, 464, 515, , 617 complementary metal oxide semiconductor (CMOS) 398, 442, , 546, 553, 634 complementary RRAM (CRRAM) conductive bridge RAM (CBRAM) 377, , conductive filament , 390, 392, 408 conductive state 464, 466 confined structure corner device extended CPS, see coherent phonon spectroscopy CRRAM, see complementary RRAM crystal growth , , 467, 550 crystalline Ge 188, 190, 497 crystalline GST 479, 483, 485, crystalline GST film crystalline line 147, 149 crystalline phase 181, 194, 197, 208, , 467, 474, 479, 485, 495, 497, 546,

3 Index 709 crystalline phase-change material 184, 549 crystalline resistivity crystalline Sb 189, 485, , 493 crystalline Si , 493 crystalline state , 149, 171, , , , 246, , 251, , 478, 496, 500, 502, 505 crystalline structure 193, 475, 495, 500 crystallite , 206 crystallization , , , , , , 224, 475, 478, 480, , , , , crystallization temperature , , , 467, , 484, 498, , 504, 532 cubic paraelectric structure current-induced magnetization switching (CIMS) 322, 331 data loss 339, , 543 data storage high-density 70, 73 three-dimensional optical 71 deactivation beam depolarization effect 42, 652 depolarizing field 641, 646, , device saddle-fin 599 semiconductor 637 dichroism 239, laser-induced dielectric constant 649, temperature-dependent dielectric layer 93, 114 dielectric material 74, 145, 501, 503 dielectric propertie, temperaturedependent , 662 dielectrics 60, 66, 388, 517, 523, 594, 596, 606, 664 diffraction 41 42, 49 52, 260 diffraction limit 26 27, 40 41, 47 48, 50 51, 53, 63 64, 68 69, 92, 140, 156, 166, 175, , , 698 optical 91 92, 157, 226 digital versatile disk (DVD) 70, 153, 163, , 260, 464 diode 371, , 379, 416, 443, 447, 507, , 514, 607, , 617, 624, 628 diode array dual trench epitaxial DRAM see dynamic random access memory stacked-capacitor 597 DRAM application 598, 602, 607 DRAM cell , , 606, 629 planar channel SFG DRAM chip 591, 596, 600, 602 DVD, see digital versatile disk dye-doped polymer film 159, 162 dynamic random access memory (DRAM) , 285, 463, 467, , 473, 591, 593, 595, , 601, 606, , , 665 dynamic readout , , dynamic readout threshold power , 123

4 710 Index EBR, see electron beam recording ECC, see exchange-coupled composite EEPROM, see electrically erasable programmable read-only memory electrical resistivity 64, 176, 225, 392, , 535 electrically erasable programmable read-only memory (EEPROM) 612 electron beam mastering technology 136 electron beam recording (EBR) 131, 135, 137 ellipticity endurance 364, , , , 428, , 491, 493, 499, 503, 539, 542, , 664, 668 cycling , 450, 547 endurance characteristic 400, 411, 414 endurance failure type erasing 174, 182, 194, 221, 611 erasure time etch process 519, etchant , , 522 etching , , 155, 413, , 597 evanescent field 52, 69 exchange bias field 337 exchange-coupled composite (ECC) 214, 367, 445, 675, exchange coupling 334, face centered cubic (FCC) 182, 215, 478, 483 far-field approach 41, 54 fast-growth material (FGM) 477 FBC, see floating body cell FCC, see face centered cubic FDTD, see finite-difference time-domain FeCapacitor 648, 650 FeFETs 648, , 668 femtosecond laser 185, 189, 206, 213 FeRAM 469, 554, 648, , 664, ferroelectric capacitor , 648, 651, 653, 667 ferroelectric cell capacitor 635, 669 ferroelectric charge 651 ferroelectric component 637 ferroelectric field-effect transistor 651, 667 ferroelectric memory , 638, 640, 642, 644, , 666, 668 ferroelectric memory device 636, 667 ferroelectric phase , 647 ferroelectric polarization ferroelectric random-accessmemory (FRAM) 633, 635, , 663, ferroelectric stack 654 ferroelectric transition 638, 644, 665 ferroelectricity 633, , 641, 643, 645, 648, 653, , 663, ferroelectrics , , , 654, 659, , , modern 637 ferromagnetic layer , , 331, 343, 664, 685 ferromagnetism 636, FGM, see fast-growth material field propagator 106

5 Index 711 finite-difference time-domain (FDTD) 62, 227 FLASH memory 467, , 664 floating body cell (FBC) 606, floating gate 468, 554, , , , 624, , 664 FRAM, see ferroelectric random-access-memory free layer 283, 287, , , 311, 313, , , 338, , , 685 free layer structure 310 grain boundary 389, 480, 482, 498, 505, , 660 HAMR, see heat-assisted magnetic recording hard disk drive (HDD) 70, 260, , , , , 689, 695 HDD, see hard disk drive heat-assisted magnetic recording (HAMR) 692, high-resistance state (HRS) 329, 380, 383, 389, 391, , , 410, , 419, , 466 HRS, see high-resistance state hybrid memory 379, 381 gated diode 607, 611, Ge , , 200, , , , , , 241, , 477, , , , Ge atoms 191, 247, 475, , 481, , 500, GeSbTe 144, , 199, , 210, 220, 476, 520, structure-optimized 202, 204 GeSbTe film 140, 144, 200, 204, 532 GeSbTe layer 533 giant magnetoresistance (GMR) 283, 287, 290, 314, , 682, 686, glass transition temperature GMR, see giant magnetoresistance GMR cell 340 GMR effect 287, GMR ratio inductive magnetic head 676, 680 information mark 114, 117, 121, 123 information recording, nano-optical information recording layer information storage 283, 287, 675 integrated ferroelectrics interface, dielectric metal 64, 66 interface layer interlayer coupling ion-doped phase-change thin film 246 irradiation 95, 151, , 180, 190, 195, 201, 211, 227, 245, 264, 266, 269, 493 irradiation time 122, , 241, 243, laser beam 40, 42, 75, 93 94, 99, 107, 109, 114, 173, 175, 183,

6 712 Index laser beam recorder (LBR) , , 144, , , , 162 laser diode 29, 31, 109, 219, 240, 249 laser energy transfer process 178 laser fluence 181, 186, , , laser heating , 206, laser-induced phase transition , 174, 176, 178, 180, , 186, 188, 190, 192, 194, 196, 198, 200, 202 laser initialization power , 238 laser irradiation 99, 102, 104, 155, 159, 231, laser power , 116, 119, , , , , 216 laser pulse fluence , 224 laser pulse irradiation, single-shot picosecond 199, laser pulse width 95 96, 175, 183 laser pulse 174, 176, 178, 180, , 185, 187, 189, 191, 193, 195, 197, 199, 201, 227 single femtosecond 192, 209, 212 ultrashort 181, 183, 185, 221, 224 laser spot 143, 175, size laser thermal recording 131, 135, , 150, , 166 laser wavelength 30, 73, 92, 114, 121, 133, 155, 162, 216 layer conductive ferroelectric 644, halogenated 522 LBR, see laser beam recorder lithographic process 285 lithography 132, 260, 448, 451, 547, 597 logic device , 629 longitudinal magnetic recording 678, , 695 low resistance state (LRS) 322, 329, 336, 379, 383, , , , , 414, 425, , 442 LRS, see low resistance state magnetic field 292, 294, , 307, 313, , , 676, , 683, 685, applied external orthogonal 294, 336 magnetic film cell (MFC) magnetic force microscopy (MFM) 652, 698 magnetic grain 676, , 700 magnetic head magnetic layer , , 299, 313, 334, 685, 689, 693 adjacent 683, 685 magnetic material, bit-patterned magnetic moment 290, 300, 312, 344, 346, 666 magnetic random access memory (MRAM) , 290, 292, 294, , , 304, , , , , , , 664, 686 magnetic recording , 679, 687, 695, 697 magnetic sensor 676, 679, 681, magnetic stray field magnetic tunnel junction (MTJ) , , 296,

7 Index , 309, 311, 313, , , , , 337, , magnetic tunnel junction , 293, , 318, 320, 322, 337 magnetization 71 72, 287, , 292, , , , , 664, 676, , 685, 687, 691, fixed 287, magnetization reversal 294, 317, 333, 343, magnetization states, remanent 287, 290 magnetization vector 303, 305, magnetoresistance 284, 310, 682, 686 MAMR, see microwave-assisted magnetic recording material ferroelectric 634, , 644, 648, 651, 659, nonmetallic 62 resin 159 semiconductor 178 melting-solidification 201, , 245 memory array , 347, 416, 442, 512, 592, 623 memory cell 282, 284, 374, 419, 435, 437, 514, 539, 541, , 594, 596, 607, , memory-cell size 341 memory device 468, 607, 630, 647, 650, 652, , 657, , 666, 668 electrical phase-change 531 memory technology 469, 667 metal doped semiconductor thin film 98 metal ferroelectric metal insulator semiconductor (MFMIS) 652 metal film 68, 75 metal insulator transition (MIT) 507, 509 metal dielectric interface 59 61, 66 metallic grating 62 subwavelength metal oxide semiconductor field-effect transistor (MOSFET) 507, 509, 607, 609, 616 metamaterial 51, 53 MFC, see magnetic film cell MFM, see magnetic force microscopy MFMIS, see metal ferroelectric metal insulator semiconductor microstructure 188, , 400, 646, 660 disordered 489 microwave-assisted magnetic recording (MAMR) 675, 690, 695 MIT, see metal insulator transition monomer , , 272 five-functional 272 MOSFET, see metal oxide semiconductor field-effect transistor MOSFET selector 509 MRAM see magnetic random access memory self-referenced MRAM application 301, 334 MRAM cell , 295, 334, 336, 340 integrated 286 MRAM device 281, , 343

8 714 Index MTJ, see magnetic tunnel junction MTJ cell , 340 MTJ element 291, 293 MTJ MRAM cell 290, 293 MTJ structure 321 multi-layer recording 53, 546 multilevel phase-change recording 232, 234, 237 NaCl structure 480 NaCl-type structure 478 NAND FLASH 507, 509, 549, 552 NAND FLASH memory nano-optical data storage 91 94, 96, 98, 100, 102, 104, 106, 108, 110, 112, , 118, 120, 122, 128 nano-optical storage , 174, 176, 178, 180, 182, 184, 186, 188, 190, 192, 194, 196, 198, 232 nanofocusing 67 nanolithography 74 75, nanorod 51 52, gold nanoscale resolution 40, 278 near-field recording system 30 32, neighbor diode 513 nearest 513 nitrogen doping , 497, 499 non-volatile memory (NVM) 339, 363, 422, 465, 553 nonlinear saturable absorption effect , 127 nonlinear super-resolution 91 94, , 126, 128 nonlinear thin film 115, 123, 128 nonvolatile memory application 635 NVM, see non-volatile memory OEL, see oxygen exchange layer OMS, see ovonic memory switching optical antenna 33, optical data storage 29, 40, 47, 70, 171, 173, 227, 278, 545 optical disk 29, 137, , , 217, , 227, 464, 477, 480, 482, 546, 549, 552 rewritable 171, 213, 215, 219, 464, 483 optical pickup 23, 92, 94, 121, 128 optical recording 39, 72, 131, 135, , 164, 166, 180, 278 optical transient , 204, 206 OTS, see ovonic threshold switching OUM, see ovonic unified memory ovonic memory switching (OMS) 465 ovonic threshold switching (OTS) 465, 507, 509, 553 ovonic unified memory (OUM) 465 oxygen exchange layer (OEL) 411, 413 PCM, see phase-change memory PCRAM, see phase-change random access memory PCRAM application 483, 487, 498, 513, 517, 544 PCRAM cell 465, 474, , , 512, 523, 526, , , , 548, , 553 PCRAM memory cell 463, 507, , 531, 533, 535, 537, 539, 541, 543, 545 characteristics of , 531, 533, 535, 537, 539, 541, 543, 545 perpendicular anisotropy , 689

9 Index 715 perpendicular magnetic anisotropy (PMA) 318, 348 perpendicular magnetic recording 678, 688, perpendicular recording 679, 688, 692, 695 perpendicular recording system perpendicularity magnetic recording (PMR) 678, , phase-change alloy , 475 phase-change film , 194, 534 phase-change material , 176, , , 239, , , , , 503, 519, , , , nanocomposite 501, 503 phase-change memory (PCM) 173, 224, 234, , 468, 540, 550 phase-change memory device 185 phase-change memory material 178, 180 phase-change random access memory (PCRAM) , 476, 478, 484, , 496, , 506, , 514, , , 534, 536, phase-change recording pit 227 phase-change resistor 530, 540 phase separation , 489, 498, , 540 phase transition dynamics 182, 185, 187, 189, 191, 193, 195, 197, 199, 201, 203, 205, 207, 209, 211 phase transition mastering (PTM) 144, 163 phonon 95, , 639 photodiode 110, 237, photoinduction 260, 264, 270, 278 photoinhibition , 264, 271, 278 photoinitiator , 268, photopolymerization 164, , photoresin 260, 264, , , 273, 276 photoresist 75, , 165 picosecond laser 198, 204, 225, irradiation of irradiation of polarized polarized single-shot 198, , 203 picosecond laser pulse 191, 205, 221 plasmonic data storage 70 71, 73 plasmonic lens 41, 52, 78 plasmonic nanolithography 74 75, 77 plasmonic nanostructure plasmonic near-field transducer PMA, see perpendicular magnetic anisotropy PMMR, see patterned media magnetic recording PMR, see perpendicularity magnetic recording point spread function (PSF) 48 pre-laser irradiation probing beam 183, 187, 197, 240 process-temperature detector (PTD) PSF, see point spread function PTD, see process-temperature detector PTM, see phase transition mastering pump-probe system , 194,

10 716 Index pumping laser 239, 246 pumping laser fluence 241 RCAT, see recessed channel array transistor readout laser power , readout signal 114, 162, dynamic 114 readout threshold power , 123 recessed channel array transistor (RCAT) recording pit recrystallization 191, 223, 498, reflectivity , , 181, 183, 186, 188, , 197, 199, 202, 204, , 213 optical 176, 194, 197, 499 reflectivity contrast 174, 180, 194, 201, 204, , 238 resistance random access memory (RRAM) 363, , , , , 424, , 435, 437, 439, , 445, 447, 449, 451 rhombohedral lattice structure 485 Rochelle salt 633, 636 RRAM, see resistance random access memory RRAM resistor , 440 SAED, see selected area electronic diffraction SAF, see synthetic anti-ferromagnetic SAM, see self-assembled monolayer Sb-based phase change material 95, 112, , Sb-based phase change thin film 95, 112 SBT, see strontium bismuth tantalate scanning electron microscope (SEM) 98, 117, , 151, 191, 244, 321, 523, 608 SCM, see storage class memory selected area electronic diffraction (SAED) 228, self-assembled monolayer (SAM) 77 SEM, see scanning electron microscope semi-floating-gate (SFG) , 614, , 628 semiconductor memory 282, 552 semiconductor 132, 177, 181, 191, 342, 393, , 498, 648, , 668, 680 SFG see semi-floating-gate planar 627, 629 SFG cell , , , 626 SFG DRAM 612, , 621 SFG image sensor 626, 629 SFG memory cell 615, 620, 624, 626 sheet resistance 197, 393, , , Si, crystal structures of signal enhancement layer 94, 115 SIL, see solid immersion lens silver (Ag) 60, 64, 98, nanoparticle embedded single-shot femtosecond laser pulse small memory array unit solid electrolyte 389

11 Index 717 solid immersion lens (SIL) 30, 32 34, 36, 92, 134, , 158, 220, 546 solid-state crystallization , 206 solid-state drive (SSD) , 623, 668 SPIN see super-resolution photoinduction-inhibition nanolithography two-photon 271, 274, 277 spin transfer torque (STT) 285, 309, , , , 323, 325, 327 SPP, see surface plasmon polariton SPR, see surface plasmon resonance sputtered film 517 SSD, see solid-state drive storage class memory (SCM) 553 strontium bismuth tantalate (SBT) 635, 644, 651, 653 STT, see spin transfer torque subthreshold swing super-resolution 21, 27 29, 31, 91, 93 94, 122, 128, 175, 219, 226, 232 super-resolution binary optics 21, 23, 25 super-resolution mark 121, super-resolution near-field structure 176, 219, 226 super-resolution optical spot 107, 109, 111, 113 super-resolution photoinductioninhibition nanolithography (SPIN) , 264, , 270, 274, 278 super-resolution readout 116 super-resolution spot 93 94, 109, , 120, superlens 41, 51, 68 69, surface plasmon polariton (SPP) 41, 65, 74 75, 228 surface plasmon resonance (SPR) 73, 99, 228, 231 surface plasmon 33, 59 63, 71 72, 74 75, 77, 99 surface roughness 149, 244, 527 switching-energy barrier 294, , 317, 319 switching field reduction switching memory 363 switching parameter , 414 synthetic anti-ferromagnetic (SAF) 297, , , 338 TA-MRAM, see thermally assisted switching magnetic random access memory tapered structure Te-based material 154 TEM, see transmission electron microscopy temperature-dependent dielectric anomaly TFET, see tunnel field-effect transistor thermal absorption layer 156 thermal conductivity 95, 215, 502, 505, , 535, 541 thermal diffusion 98, 128, , 408, 530 thermal stability 297, , 325, , 345, 483, 490, 493, 495, 499, 504, 689, thermally assisted switching magnetic random access memory (TA-MRAM) , 338 thin film 95, 98 99, 109, , , , , 188, , ,

12 718 Index , , 290, , , high-quality 683 threshold vacuum switch (TVS) 381 TMR, see tunneling magneto-resistance toggle MRAM 296, transistor pass-gate 650 saddle-fin transition metal layer 306 transition temperature 497, 638, 646, transmission electron microscopy (TEM) 227, 389, 391, 401, 478, 493, 495, 500, 502, 540, 689 TTRAM, see twin-transistor random access memory tunnel barrier 291, 310, 312, 320, , 341, 344 tunnel field-effect transistor (TFET) , , 621 tunnel junction , 334 tunnel resistance tunneling magneto-resistance (TMR) , 309, 320, 322, 336, 343, , 679, TVS, see threshold vacuum switch twin-transistor random access memory (TTRAM) 606 two-cycle DED process U-shaped channel , 612, 626 U-shaped device , extended 598, 600 ultrathin film 639 waveguide structure adiabatic 65 non-adiabatic 65 white-line intensity (WLI) 193 WLI, see white-line intensity WL, see word line word line resistance 394 word line (WL) , , , 373, , 434, , 442, 446, 511, , , 602, 604, 621 ZnO film 159