Electrical Characterization with SPM Application Modules
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1 Electrical Characterization with SPM Application Modules
2 Metrology, Characterization, Failure Analysis: Data Storage Magnetoresistive (MR) read-write heads Semiconductor Transistors Interconnect Ferroelectric thin films capacitors Conductive Polymers
3 Modular Electrical Characterization SPM plus multiple modules: CAFM, TUNA, SCM, SSRM Modules can be exchanged in five minutes or less Available for the Digital Instruments Dimension and MultiMode SPM systems MultiMode Head with Module Dimension Head with Module
4 Scanning Capacitance Microscopy (SCM)
5 Scanning Capacitance Microscopy Spatial resolution: 15-20nm Dynamic range: atoms/cm 3 2-D imaging and local C-V spectra Main application: 2-D dopant profiling in semiconductors: Si & compound Process evaluation Is the implant there? Does the implanted region have the correct concentration value and dimensions? Failure analysis TCAD simulator calibration R&D: quantum dots, FerroElectrics, etc.
6 SCM Principle of Operation SiO 2 Si = MIS capacitor capacitance AC voltage Maps 2D carrier/dopant profiles Metalized tip and semiconductor sample for metal-insulator-semiconductor capacitor AC bias is applied to sample and resulting change in capacitance is monitored
7 SCM Example Topography SCM dc/dv n p n p n Scan size: 15x7.5 µm Sample: Cross-sectioned isolation area between 2 bipolar transistors Topography shows some detail (polished cross section) SCM dc/dv image shows depleted & doped regions (n- and p-type)
8 SCM Example: Ion Implanted device SCM dc/dv Phase Topography 200nm 10.0V SCM image (right) of Si structure: n-type implant (dark areas) in p-type substrate. Additional (shallower) p-type implant ~200nm-wide can be observed at high lateral resolution.
9 SCM Example: Silicon DRAM Cells Topography SCM dc/dv Amplitude SCM dc/dv Phase 200nm 10.0V 5.0V The 3 images are obtained simultaneously. See next slide for details.
10 SCM Example: Silicon DRAM Cells SCM dc/dv Amplitude 10.0V SCM dc/dv Phase 5.0V The phase image differentiates between p-type (bright color) and n-type (dark color) doped areas. The SCM dc/dv amplitude image shows the relative magnitude of the carrier concentration
11 Bell Labs Vertical Transistor TEM SCM S 50nm D Courtesy of Rafi Kleiman, Bell Labs Unlike TEM, SCM shows differently-doped areas, including source, drain, and well
12 SCM Failure Analysis Example SCM dc/dv (amplitude) images 15x7.5 µm scans. Sample: good & failed (right) device Image of the failed device (right) shows a short circuit between 2 doped regions explaining the high leakage of this device. Device on left is good.
13 SCM dc/dv - V curves on doped silicon n-type Si 2x10 17 at./cm 3 p-type Si 3x10 19 at./cm 3 SCM can measure the dc/dv versus bias voltage at a fixed x,y position. Sign of DC/DV curve differentiates n-type and p-type -
14 FerroElectric (FE) Materials Characterization SCM can be used to image the domain state in FE materials Resolution: ~10 nm High capacitance sensitivity: F/ Hz measure the local (10 nm) dc/dv-v, C-V and Polarization curves on single grains or small FE capacitors modify the local domain state by applying DC voltage pulses
15 SCM on FerroElectric Film SCM dc/dv Topography 25 µm scans Sample: PZT FerroElectric (FE) film FE domain polarization can be manipulated and imaged with SCM
16 SCM for FerroElectric applications conductive SCM probe FE-film capacitance Out of phase in phase bottom electrode (Pt) AC voltage FE capacitor
17 SCM for FerroElectric applications SCM measures dc/dv The sign of dc/dv is a measure of domain polarization Signal in area 1: dc/dv + and - Signal in area 2: dc/dv always + C dc/dv V V 2 1
18 dc/dv - V spectra w/ SCM on ferroelectrics dc/dv spectra can be measured with SCM when the probe is held in a fixed position. Exclusive to SCM.
19 SCM dc/dv - V & hysteresis spectra of FerroElectrics dc/dv (a.u.) C (a.u.) voltage (V) P (a.u.) C-V & Polarization spectra can be obtained by integration of the SCM dc/dv spectrum voltage (V)
20 FerroElectric characterization: Macroscopic vs. SCM polarization curve Macroscopic (large area-mm) SCM (single grain) Polarization (µc/cm 2 ) V 3 V 5 V Polarization (a.u.) Drive Voltage (V) Drive Voltage (V) (macroscopic data supplied by Hyundai)
21 SCM dc/dv curves on sub-micrometer FerroElectric capacitors FIB-milled 0.5 µm FE capacitor: SCM dc/dv & polarization curves measured on this capacitor: dc/dv (a.u.) int(capacitance) (a.u.) voltage (V) voltage (V)
22 SCM FerroElectric Domain Imaging Topography Image dc/dv Phase Image 2 1 signal in area 2: dc/dv always positive Topography and SCM dc/dv phase images of a FerroElectric thin film deposited on top of Pt electrode Topography shows granular structure of thin film with nm sized grains. dc/dv phase image shows polarization state of individual grain
23 SCM FerroElectric Domain Imaging dc/dv V 2 1 signal in area 2 of plots signal in area 1 of plots Left: Boxed area in Phase image in previous slide Right: Same area but now with a DC voltage of 5V applied. The DC voltage changes the polarization such that all grains have the same polarization state.
24 FerroElectric grain Domain Manipulation & Imaging with SCM A single FerroElectric grain s polarity is switched by applying a DC voltage pulse (~1ms) of -5V when the probe is positioned on the grain. Note the apparent presence of domain boundary within the grain SCM is used for domain imaging before (left) and after manipulation.
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