MINIATURIZATION TECHNOLOGIES FOR DEPLOYABLE SYSTEMS
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1 MINIATURIZATION TECHNOLOGIES FOR DEPLOYABLE SYSTEMS MEMS, MICROSENSORS, AND NANOTECHNOLOGY Harish Manohara NANO AND MICRO SYSTEMS GROUP Jet Propulsion Laboratory 4800 Oak Grove Drive Pasadena, CA Document Clearance CL# and CL# Copyright Government sponsorship acknowledged. DocID:77692.
2 Extreme Environments VENUS: 470 C and 97 Bars TITAN: -179 C
3 Introduc1on Engineered Materials Embedded sensors and actuators Damage Detec7on Sensors Self- Healing Capability Deployable Systems Miniature Instruments Analy7cal X- ray, Mass, Raman, etc Electronics Imaging Cameras Power/ Energy Storage Systems Microassembly of Hybrid Components Sensors Actuators Deployable Solar Panels Iner7al Sensors Microgyroscope Solid State (SiC, Si- Ge, SOI- CMOS) Analog Wind Energy Harnessing Vacuum Electronics CNT Vacuum Electronics Embedded Actuators Thermal Energy Harnessing Digital
4 Extreme Environment Miniature Systems Survive high/low temperature, high pressure, high radia7on, corrosive environments Self Sufficient: - Energy harnessing from surroundings Mul7func7onal Long life7me Vibra7on tolerant Reliable - maintenance free
5 Miniaturiza1on Technologies Device/system design Material selec7on for extreme environments Components iden7fica7on PaSern development Lithography and/or PaSerned synthesis Micromachining - Bulk: remove material from bulk to create pa:erned shapes - Surface: add material on a suppor<ng structure to create pa:erned shapes Post processing Device release Interconnects Electropla<ng/Molding System development using assembly - Monolithic - Modular - Hybrid
![Extreme Environment Devices Material or Device Theore1cal Max [ o C] Bulk Silicon 225+ Bulk Si SOI 300+ Gallium Arsenide- based 400+ GaN- based 600 Integration Level SOI SiC Silicon Carbide 600](/docs-images/90/102878196/images/6-0.jpg "Temperature Range Diamond 800 Vacuum Electronics 1000 Based on data presented at the NASA JPL Extreme Environment Workshop held in May 2003 E. Kolawa, M. Mojarradi, A. Stoica, L.")
6 Extreme Environment Devices Material or Device Theore1cal Max [ o C] Bulk Silicon 225+ Bulk Si SOI 300+ Gallium Arsenide- based 400+ GaN- based 600 Integration Level SOI SiC Silicon Carbide 600 Temperature Range Diamond 800 Vacuum Electronics 1000 Based on data presented at the NASA JPL Extreme Environment Workshop held in May 2003 E. Kolawa, M. Mojarradi, A. Stoica, L. Del Castillo et al
7 Vacuum Electronics 4 kilobits of memory stick? the circuit size was a big problem! Google Images
8 Carbon Nanotube Vacuum Electronics Silicon Micromachining + Carbon Nanotubes SMALLER devices! Large scale integra7on is possible: the en7re circuit is vacuum packaged 1 µm φ 5 µm COLD and LOW POWER opera7on
9 Carbon Nanotube Vacuum Electronics Anode Extrac1on Gate CNT Cathode + Insulator + I = γ 2 A φ ( e) V d 2 e φ 2 d γv I-V Curve - I : Emission current (A) V: Biasing voltage (V) ; I (A/cm 2 ) d : gap a, b: constants φ: Work function E (V/µm) γ: Field enhancement factor
10 Jet Propulsion Laboratory Carbon Nanotube Vacuum Electronics Use different material parts to make an electrode stack. Implement hybrid microassembly process to align and stack different electrode layers: cathode, spacers, extrac7on grid, modula7ng grid, anode, etc. Chip- scale vacuum packaging to produce discrete or circuit- level vacuum electronic components.
11 Carbon Nanotube Vacuum Electronics Anode (I, V) I I e - d 0 Field emission current at anode CNT E G g d Anode (I, V) 0 E th Gate e - CNT Applied gate-cathode bias d > g V G = V E G > E > E th
12 CNT Digital Vacuum Electronics
13 CNT Digital Vacuum Inverse Majority Gate Device Schematic Electronics Operational Schematic Miller Capacitance Truth Table
14 CNT Digital Vacuum Electronics Truth table of IMG Experimental Results Gate 1 Gate 2 Gate 3 Output Va (V) Vg1 (V) Vg2 (V) Vg3 (V) Ia (na) Output State
15 CNT Digital Vacuum For a Full Adder Footprint (µm) Solid State (0.18 µm process) Solid State (0.09 µm process) IMG- based (0.5 µm process) x x x 4 Miller Capacitance Electronics Tradi7onal vacuum tubes operate at 1300 to 1500 C, so are natural choices for high- temperature electronics. Device can be designed for smaller footprint Miller Capacitance (F) Dimension space of interest! Anode-Gate Overlapping Area (sq. µm) Anode-Gate Gap (µm) Switching frequency GHz possible; limited only by the K- A electron transit <me Low level current (tens of na) opera7on ensures long opera7onal life7me (10,000 hours tested for CNT flat panel displays). CNT emission more stable at 700 C (<1% varia7on tested).
16 Jet Propulsion Laboratory Miniature Stereo Camera The smallest stereo camera, with lens diameter < 3mm. This was done by placing complementary mul7band pass filters in a single- lens, dual aperture system. Housing for Actuation and Controls 3D- MARVEL: A unique endoscopic tool capable of sweeping the stereo camera in the horizontal plane over an angle of ±60 making it possible to get a panoramic view of the opera7ve field. Endoscope Grip Metallic Stem Bending Section 3D Camera
17 Jet Propulsion Laboratory Harsh Environment Sensors Strain-gauge based high temperature flow sensor demonstrated on flexible ceramic substrates for oil and gas industrial applications New material and design scheme implemented to meet sample sensor requirements for planetary sample return missions. Capacitive sensor that measure weight of the sample on a planetary surface was demonstrated as an integral part of the sample collection canister.
18 Jet Propulsion Laboratory Material Integrated Sensors and Actuators Using an array of embedded capacitance sensors, carbon fiber and carbon nanotube composites are being made capable of detecting and pin-pointing structural damages for repair/healing. In collaboration with Caltech, light-weight, deformable-membrane mirror technology for in-space reconfigurable large-area telescopes systems is under development. These silicon membrane mirrors use integrated piezo actuators to provide active control of the reflecting surface.
19 ACKNOWLEDGMENTS The research presented here were carried out at the Jet Propulsion Laboratory,, under a contract with the National Aeronautics and Space Administration. I thank the sponsoring agencies that supported projects reported in this presentation: NASA (OCT and CIF), JPL R&TD, DARPA, Commercial Entities (Oil an Gas, Skull Base Institute) Work done by NAMS group members: Drs. Karl Yee, R. Toda, L. Del Castillo, V.Scott, R. Murthy, and S.Y. Bae Collaborators: M. Mojarradi, S. Pellegrino, F. Hadaegh
20 Thank You!
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