PHOTODETECTORS AND SILICON PHOTO MULTIPLIER
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1 ESE seminar Photodetectors - Sipm, P. Jarron - F. Powolny 1 PHOTODETECTORS AND SILICON PHOTO MULTIPLIER ESE seminar Pierre Jarron, Francois Powolny
2 OUTLINE 2 Brief history and overview of photodetectors Types of photodetectors phototubes Semiconductor devices Avalanche or secondary electron multiplication Avalanche photodiode Introduction to silicon PM Geiger mode avalanche semiconductor devices Principle of silicon PM Process and technologies Basic architecture Performance of silicon PM Quantum resolution, detection efficiency Timing i resolution Readout electronics Applications
3 Historical beginning of photodetectors the photoelectric effect 3 When Einstein published his seminal 1905 paper p on the particle theory of light, Millikan was convinced that it had to be wrong, because light was considered as purely a wave. He undertook a long experimental program to test Einstein's theory. His results confirmed Einstein's predictions in every detail, but Millikan was not convinced of Einstein's radical interpretation, and as late as 1916 he wrote, "Einstein's photoelectric equation... cannot in my judgment be looked upon at present as resting upon any sort of a satisfactory theoretical foundation," even though "it actually represents very accurately the behavior" of the photoelectric effect.
4 Photodetectors type 4 Goal: converting the energy of absorbed photons into a measurable electrical signal Basic parameters: single photon or not, speed, gain, quantum efficiency, QE f(wavelength) 3 types
5 Photoelectric tubes single photon detection 5 All based on photocathode Devices based on electron multiplication Dynodes based photoelectric tube (PMT) Micro channel plate (MCP) based photoelectric tube Device based on electron bombarded silicon sensor Hybrid photoelectric detector Principle Generation of photoelectron with a photocathode R. Millikan experimental device Electron multiplication with secondary electron Avalanche in vacuum or ionization in silicon
6 Photo-Multiplier-Tube (PMT) history 6 Who invented the PMT It is a Russian physicist and engineer L.A Kubetsky In August 1930, he proposed a device with a photocathode and a series of dynodes multiplying the primary electron with secondary electron emission i The first photomultiplier li tube in the world: Kubetsky s k tube in 1930 But for others the first PMT was developed by V.K.Zworykin et al. at RCA in 1936
7 The photomultiplier tube 7 Photocathode, work function Typical characteristics Photocathode quantum efficiency: 30% (70% of photons are not converted) Signal gain up to 10 8 Dynode voltage: V
8 Microchannel plate (MCP) 8 MCP principle i Ultra fast Single Photon detector : pixilated MCP- PMT Done in collaboration with Space Research center Leicester and Photek for time resolved fluorescence CERN TT project photocathode th ΔV provides e - acceleration : defines transit time photocathode to MCP and e - energy for 1 st collision in the MCP Gain : ~ 10 5 to 10 6 MCP Chevron stack CERN (Rui)Multi-anode on multilayer ceramic V1 V2 d 1 z Position at t = t 1 Position at: t = t 1 +time1 z or t d res ε res Resistive layer Electrode Emitted e - : Distributed in time (TTS) and in energy Vacuum x ~ 5 10^5 e - Image intensifier ~ 2 10^6 e - 20 ps time resolution single photon detection
9 HPD CERN development 9 US HPD patent 1975 was called electron bombarded device HPD principle LHCb-RICH HPD T. Gys X HPD C. Joram
10 Semiconductor photodetectors 10 Photoconductors: t based on conductivity it variations Photodiodes: based on junction, heterojunctions PN-diodes, photovoltaic (ex: solar cells) PIN-diodes Phototransistor CCD Schottky photodiode (metal-semiconductor) Linear avalanche photodiodes(apd) Geiger mode avalanche APD Silicon PM Band gap engineered photodetectors Quantum well infrared photodetector(qwip) Stair case avalanche alanche photodiode
11 Photoconductor 11 Optical electron-hole pair generation changes the conductivity of a semiconductor material Materials: Si,Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR) Applications: security alarm, street lights, IR-astronomy, IR-spectroscopy
12 Photovoltaic detector 12
13 PN photodiode 13 Reverse biased PN junction C-band Depleted MOS structure used in CCD V-band Reversed bias Depleted silicon depth
14 Avalanche photodiode 14 Avalanche in silicon P-N junction Known since 45 years Journal of applied physics Vol.32-6, Vol But very slow development I ph λ c h q P in M η photocurrent photon wavelength photon velocity Planck's constant electronic charge incident optical power (W) photoelectric gain quantum efficiency
15 Single photon avalanche photodiode 15 SPAD, Geiger avalanche mode Single photon detection, binary device Noise: single thermal electron Biased above breakdown V BD ( Va VBD ). CAPD Gain gain = q Very fast device : discharge of C D on the external low resistance OFF photon Quenching ON In Sensors 2008, 8,
16 Comparison of S-P photodetectors 16 PMT Linear-mode APD Geiger-mode APD Photoelectric gain 10,000 1,000, , ,000 Excess noise factor <2 >2 2 Max. detection <25% <50% 25% 100% probability Operating temperature 240 K 240 K 300 K Voltage bias >1000 V V V Detection ec speed <1 ns spuses pulses >20 ns pulses puses <1 ns spuses pulses Afterpulsing No no yes Wavelength µm µm µm Magnetic field Yes No No susceptibility Reliability <1000 hr. <100,000 hr >1000 hr.? Large array capability Yes MAPMT yes? Crosstalk N/A No Poor
17 NINO 0.25 circuit used in ALICE TOF SPAD/Sipm signal fc/single photon avalanche Gain , 1.5 ns, Current mode input stage Common gate configuration Noise 3000 e- NINO works like a QTC or TOT Jitter 10 ps rms for 100 fc NINO Block diagram Response to ultra fast analogue pulse
18 NINO 0.13 results 5 to 40 fc
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