Graphene heterostructures with Nitrides for high frequency Electronics. Filippo Giannazzo
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1 Kick-off meeting Project GraNitE: Graphene heterostructures with Nitrides for high frequency Electronics Filippo Giannazzo Consiglio Nazionale delle Ricerche (CNR), Institute for Microelectronics and Microsystems (IMM), Catania, Italy
2 Outline - Description of the project and research method: - State of the art -Objectives -Consortium - Implementation, workplan - Interaction with the Graphene Flagship Core1 project - Expected impacts
3 Lateral graphene field effect transistors (GFETs) Graphene State of the art RF transistors CVD graphene I d (ma) Dirac 0.5 point V top gate (V) Current gain Power gain I on /I off <10 high I off Power dissipation No bandgap in Gr banstructure f T f max Epitaxial graphene on SiC Current gain Power gain f T f max Y. Wu, et al, Nano Lett., 12, (2012).
4 Graphene integration with semiconductors technology Graphene/Si Schottky diode with gate modulated barrier height: Barristor V gate qv sd qv sd V sd Output characteristics p-type Si Transfer characteristics p-type Si Applications Logic circuits: inverter V sd =0.3 V V sd (V) H. Yang, J. Heo, S. Park, H. Jae Song, D. H. Seo, K.-E. Byun, P. Kim, I. Yoo, H.-J. Chung, K. Kim, Science 336, (2012)
5 Graphene integration with semiconductor technology Hot electron transistor (HET) with a graphene base -Current injection of from the emitter into the Gr base by Fowler-Nordheim (FN) tunneling controlled by V BE. - Injected electrons ballistically transit in the Gr base. - After overcoming a filtering barrier layer, hot electrons are collected at the collector terminal. Graphene ideal material for the base of HET THz operation predicted State of the art graphene HETs C. Zeng, E. B. Song, M. Wang, S. Lee, C. M. Torres, J. Tang, B. H. Weiller, K. L. Wang, Nano Lett. 13, (2013) S. Vaziri, G. Lupina, C. Henkel, A. D. Smith, M. Ostling, J. Dabrowski, G. Lippert, W. Mehr, M. C. Lemme, Nano Lett. 13, 1435 (2013)
6 Graphene integration with group III-Nitride (III-N) semiconductors Motivations: GaN material of choice for optoelectronics (LED, lasers).and energy efficient high frequency electronics Bandgap (ev) 1.11 (Indirect) Si GaN 3.4 (Direct) Intrinsic carrier concentration (cm -3 ) at 300 K I. Akasaki H. Amano S. Nakamura Very low off-state currents for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources Electron mobility (cm 2 V -1 s -1 ) Saturation electron velocity (10 7 cm/s) Critical electric field (MV/cm) Thermal conductivity (W/cmK) Large area system of electrostatically coupled Dirac and Schroedinger 2DEGs Graphene E Dirac electrons F E D v F q n gr Superior current transport Higher breakdown voltage Superior heat dissipation Schroedinger electrons E F E c min qm 2 * w n s 1 q 80 9q AlGaN 2 8m * w 2 3 n 2 3 s 2DEG Al x Ga 1-x N GaN GaN Si
7 GraNitE: Graphene heterostructures with Nitrides for high frequency Electronics Objectives: (i) Design, fabrication, structural and electrical characterization of high quality graphene (Gr) heterostructures with thin films of Nitrides, i.e. GaN, AlN and related alloys (Al x Ga 1-x N). - III-N layers grown by MBE or MOCVD on different substrates: Al 2 O 3, SiC, GaN, Si. - Transfer of CVD grown Gr from Copper to III-N or direct growth of Gr on III-N and of III-N on Gr. - Advanced structural and electrical characterization of the heterostructures: understanding current transport mechanisms at the interfaces. - Multiscale simulations for the growth, processing and device design. (ii) Demonstration of novel device structures Graphene/AlGaN/GaN Schottky diode with a gate modulated Schottky barrier (Barristor) for logic applications Graphene Base-Hot Electron Transistor (GB-HET) on Nitride heterostructures for ultrahigh frequency (THz) applications
![Deretzis et al., Phys. Rev. E 93, 033304 (2016) E-E F [ev] F. Giannazzo, et al., Phys Rev.](/docs-images/92/108058629/images/8-4.jpg "B 86, 235422 (2012) T Gr S Gate 200 m D R (k) 1.5 V DS =0.3 V 1.0 0.")
8 GraNitE project s consortium IMM Catania, Italy PI: F. Giannazzo, Co-PIs: F. Roccaforte, A. La Magna Advanced characterizations SPM Atomic resolution STEM Processing and devices prototyping GaN-based HEMTs GaN on 6 Si wafer V G = 2 to -3 V G. Nicotra, Q. M. Ramasse, I. Deretzis, A. La Magna, C. Spinella, F. Giannazzo, ACS Nano 7, 3045 (2013) T1900 C p si =9.8 Pa Multiscale simulations Process simulations Example: epitaxial graphene growth Electronic transport simulations Graphene field effect transistors 20 m t=0.1s t=3s I. Deretzis et al., Phys. Rev. E 93, (2016) E-E F [ev] F. Giannazzo, et al., Phys Rev. B 86, (2012) T Gr S Gate 200 m D R (k) 1.5 V DS =0.3 V V BG =0 to 50 V V TG (V)
9 GraNitE project s consortium PI: M. Leszczyński, Co-PIs: P. Kruszewski, P. Prystawko Warsaw, Poland Growth of III-N epi structures on different substrates: Al 2 O 3, SiC, bulk-gan Technology for GaN-based power devices, LEDs, Lasers
10 GraNitE project s consortium CNRS PI: Y. Cordier, Co-PI: A. Michon, E. Frayssinet Valbonne, France MOCVD growth of III-N multilayers on silicon wafers (up to 150 mm) CVD growth of Gr on SiC CVD growth of Gr on AlN thin films on Si CVD growth of Gr on Al 2 O 3 (sapphire) SiC 5 m Z=5 nm n s = cm -2 =9400 cm 2 V -1 s -1 R. Ribeiro-Palau et al.,nature Nanotechnology 10, 965 (2015) A. Michon, et al., APL 104, (2014).
11 GraNitE project s consortium Catania, Italy PI: S. Ravesi, Co-PIs: F. Iucolano, S. Lo Verso - One of the largest microelectronics industries in Europe - Strong commitment in GaN technology for energy efficient power and high frequency electronics - GaN pilot line in the Catania site - Graphene Flagship Core 1 partner (WPs Flexible electronics, Wafer scale integration) Novel device structures and processing solutions from participation in the GraNitE project
12 GraNitE project s consortium Roles of the partners IMM -Project coordination, -Processing -Characterizations, -Simulations Key process steps: Gr transfer, 2DEG isolation, ALD deposition of dielectrics, contacts,.. Device design and multiscale simulations Fabrication of device test structures and prototypes Advanced structural/electrical characterizations (SPM, TEM). Device processing in a semiconductor fab environment Processing of Gr/AlGaN/GaN heterostructures on 6 silicon wafers Testing of high frequency devices. Exploitation management Growth of AlGaN/GaN on different substrates: Al 2 O 3, SiC, bulk-gan Characterization (AFM, XRD, CV) of asgrown epi-wafers CNRS -Growth of Nitride Substrates/multilayers - Characterizations -Growth of Graphene/Nitrides heterostructures -Characterizations Growth of AlGaN/GaN on 6 Si wafers CVD growth of Gr on III-N thin films MOCVD growth of III-N thin films on Gr Characterization (LEED, XPS, AFM, SEM, XRD) of as grown heterostructures
13 Project s implementation WP2: Characterization & simulations WP1: Heterostructures fabrication T2.1 Simulations T2.2 Micro and nanoscale structural and electrical characterization T2.3 Devices electrical characterization WP3: Devices implementation T1.1 Growth of III-N thin films and multilayers T3.1 Development of advanced processing T1.2 Transfer of Gr on III-N thin films T3.2 Devices test structures T1.3 Direct growth of Gr on III-N and of III-N on Gr T4.1 T4.2 T4.3 T3.3 HF and logic devices Management, coordination and project monitoring Knowledge management Dissemination WP4: Management, Dissemination and Exploitation
14 Project s implementation - Starting date: February 1, Kick-off meeting: Catania, February 25, 2016
15 Interactions with the Graphene Flagship Core 1 project Electronic devices (D. Neumaier) Opto- Electronics Division 3 Flexible electronics Wafer-scale system integration Division 2 Health & environment Biomedical technologies Sensors GraNitE Division 4 Energy storage Energy generation Polymer composites Coatings & foams Production Enabling technologies Enabling materials (M. Garcia Hernandez) Spintronics Division 1
16 Interactions with the Graphene Flagship Core 1 project GraNitE project s activity Development of large area and high quality Gr heterostructures with III-N thin films: -Gr transfer from Cu to III-N layers - CVD growth of Gr on III-N and of III-N thin films on Gr. Novel electronic devices based on Gr heterostructures with AlGaN/GaN junctions hosting a 2DEG at the interface: - Gr/semiconductor Schottky diode with a gate modulated Schottky barrier - Gr Base Hot Electron Transistor Graphene Flagship Core 1 WP Enabling materials (M. Garcia Hernandez) - Synergies with the groups working on the large area growth of Gr on SiC (e.g. Linkoping University) and on metals. - Interactions with the characterization and modelling groups. Electronic devices (D. Neumaier) - Comparison with other device schemes developed using different heterostructures for benchmarking. - Interactions with the groups working on devices simulations and high frequency electrical characterization
17 Interactions with other FlagERA JTC2015 projects Linkoping University, Sweden A. Kakanakova, R. Yakimova, G. K. Gueorguiev, V. Khranovsky GRIFONE: Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications IMM, Catania P. Fiorenza, F. Giannazzo Hungary B. Pécz, J. Lábár, L. Tóth
18 Expected impacts Development of hybrid Graphene/III-N technology : know-how on materials, processing, devices Significant scientific and technological impacts in important areas of ICT and beyond High-frequency electronics: Vertical hot electron transistors based on graphene/algan/gan heterostructures with cut-off frequency f t >1THz, common base current gain α>1, collector current density up to J c >1A/cm 2. New logic devices. Gate modulated Gr/AlGaN/GaN Schottky diodes (Barristors) with I on /I off >10 8, very low I <10, off -12 A (i.e. very low power dissipation) and the possibility to operate at temperatures >200 C (applications in special environment). Production of Gr/III-N heterostructures on large area. High quality heterostructures of Gr with III-N thin films/multilayers grown on different substrates including Si (6 inches wafers), SiC, Sapphire, GaN (from 1 to 3 inches wafers). Potential applications in several fields: optoelectronics (LEDs, lasers), sensing, In line with the objectives of Graphene Flagship: Transformational impact on science and technology and substantial benefits for the European economy and society.
19 Follow us on:
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