Electronics with 2D Crystals: Scaling extender, or harbinger of new functions?

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1 Electronics with 2D Crystals: Scaling extender, or harbinger of new functions? 1 st Workshop on Data Abundant Systems Technology Stanford, April 2014 Debdeep Jena (djena@nd.edu) Electrical Engineering, University of Notre Dame 1

2 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 2

3 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 3

4 The Transistor: Up against fundamental limits G S D The transistor is an electronic switch: Digital Electronics It is also an amplifier: it has gain high speed: RF electronics high voltages: Power electronics 4

5 Charge-based electronics wins for digital electronics Energy (fj) SpinFET Energy vs. delay of inverters with fanout 4 with current-controlled switching, V dd =0.01 V ST: Spin-Torque Spin-wave ST transfer triad BISFET CMOS high performance Graphene pn junction All-spin logic ST Majority gate ST oscillator ST Transfer/ Domain-Wall Nanomagnet Logic Preferred Corner Heterojunction III- V Graphene nanoribbon Physics hiding under the hood Delay (ps) CMOS low power Charge- vs spin-based LOGIC (industry benchmarks)

6 Electronic switches today Conventional Silicon CMOS: The reports of my death are greatly exaggerated FETs Need breakthroughs in Bipolars Need breakthroughs in Scaling Surfaces/Interfaces Power consumption Efficiency/cost Scaling Surfaces/Interfaces Power consumption Efficiency/cost Complementary logic 22nm FinFET Neo TFETs Need breakthroughs in Other candidates Need breakthroughs in Scaling Surfaces/Interfaces Performance Complementary logic Realistic demos Scaling Surfaces/Interfaces Performance Complementary logic BisFETs, MottFETs, etc 6

7 Bandstructure of traditional semiconductors Real-space picture of Electron Orbitals sp 3 hybridization 3D semiconductors: sp 3 orbitals. Conduction by carriers near band edges. Conduction band (electrons): s-like spherical, isotropic Valence band (holes): p-like highly anisotropic 7

8 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 8

9 2D Crystals: Graphene, Semiconductors, and more Graphene, BN MoS 2, MX 2 family Graphene Family: Graphene: symmetry zero bandgap Boron Nitride: broken symmetry 5.2 ev bandgap MX 2 Family: Semiconducting Metallic, Charge-density wave Magnetic, Superconducting Common characteristics: No out-of-plane chemical bonds Thinnest materials known 9

10 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 10

11 As 3D Crystal semiconductors become small 11

12 2D Crystals offer a NEW electronic phase space 2D crystals 12

13 Scaling and electrostatics with 2D crystals 2D crystals 2D crystal semiconductors extend vertical scaling. Excellent electrostatics in 2D geometries. Double-gates natural (this is what SOI always wanted to be!). Lateral scaling: Controllable by doping/bandgaps. 13

14 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 14

15 Bonds/Interfaces/Heterostructures Chemical bonds are made of s, p, and d-orbitals. No out-of plane bonds No dangling bonds Low chance of interface traps. Interfaces are pristine, no strain as in 3D heteroepitaxial materials. Heterostructures are formed by stacking or van-der-waal epitaxy. Band-offsets are pristine and easily measured. 15

16 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 16

17 Dielectrics for 2D Crystals: HfO 2 SS ~ 74 mv/decade. On/Off~10 8. Conventional ALD seems to work, but hysteresis may be present. Nature Nano (Kis group, 2011). 17

18 TFT switches today & the case for layered materials log(id) Traditional TFT materials (amorphous Si, organics, oxides) have either Low mobilities (< 1 cm 2 /V.s) or Very high subthreshold slopes (~1 V/decade) due to defects SS off MOSFET on VDD mobility VG Layered materials offer a unique solution IEDM

19 Multilayer MoS 2 Thin-Film Transistor (TFT) SS ~ 70 mv/decade. On/Off~10 7. Robust current saturation: first time in a 2D layered crystal! Current saturation is very important in transistors for gain & fan-out Nat. Comm

20 Dielectrics for 2D Crystals: 2D crystal BN! 2D BN breakdown field ~8 MV/cm! No dangling bonds, much cleaner. 2D dielectrics for 2D crystals seems feasible. Columbia group. 20

21 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 21

22 Carrier inversion in MoS 2 : Observed Switching from n-channel to p-channel achieved with ALD dielectric. Contacts to one type of carriers inversion is slow. Very essential for complementary logic with 2D crystal semiconductors! Notre Dame. 22

23 First MoS 2 circuits First rudimentary logic circuits using MoS 2 EPFL (2012) and MIT (2012). 23

24 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 24

25 Effective masses, Mobilities In-plane effective masses are large DOS is high, mobility is low (~few 100 s cm 2 /V.s) Electron and hole effective masses are similar Guo group (Florida). 25

26 Effective masses, Mobilities of MoS 2 TMD semiconductors to date (expt) Experimental mobilities are VERY LOW! What are the fundamental limits of transport and mobility of TMD semiconductors? 26

27 Current drives in the ballistic limit: Projected pmos nmos What is lost in transport is gained back in electrostatics: high current drives in scaled limits. Guo group (Florida). 27

28 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 28

29 Mobility (cm 2 /Vs) Scattering and Mobility limits in Monolayer MoS 2 Intrinsic mobility accessible in CLEAN, SUSPENDED layers 10 4 Air/Air 1 m ~ 4200cm2 Vs N I cm -2 ( ) Currently reported electron mobilities are limited by Ionized impurity scattering BN/BN 5.1 Very low impurity densities: intrinsic/remote phonon scattering determine the highest attainable mobilities SiO 2 /Air AlN/Al 2 O 3 SiO 2 /HfO 2 ZrO 2 /HfO 2 Phonon scattering e T=300 K n s =10 13 cm -2 Charged impurity scattering High-κ gate dielectrics can increase the electron mobility only for samples infected with very high impurity densities Impurity density (cm -2 ) 29

30 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 30

31 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 31

32 Quasi-2D properties in a Wide-Bandgap 3D Crystal Ga 2 O 3 devices demonstrated in 2012/2013 There are crystals between 2D and 3D quasi-2d? A wholly unexplored arena for new high temperature & high-voltage logic devices 32

33 Quasi-2D high-voltage transistors: on-chip power conditioning Nanomembrane high-voltage transistors with Ga 2 O 3 33

34 MBE growth of extreme-bandgap oxides MBE Ga 2 O 3 Initial MBE growths of Ga 2 O 3 at Notre Dame 2e-8 5e-8 8e-8 1.1e ev 4.9 ev No growth No growth 34

35 Outline Charge-based electronics Conventional Neo 2D Crystals Electrostatics Scaling Bonds/Interfaces/Heterostructures Dielectrics Inversion Transport Effective masses, conventional transport Tunability Contacts Neo electronics possibilities enabled by 2D crystals Challenges moving forward 35

36 2D Crystal Device Roadmap We are here today 36

37 Materials challenge: TMD/layered semiconductors Molecular Beam Epitaxy of 2D Crystal Heterostructures For precise DOPING & Heterostructures (Xing, Furdyna, Jena) 37

38 2D Crystal Electronics Benchmarking 38

39 Herbert Kroemer s message 39

40 Surprises in d-orbitals: Superconductivity Case in point: Superconductivity in MoS 2 FETs: d-orbital effects show up!! 40

41 The Golden Pavilion temple in Kyoto 41

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