Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Size: px
Start display at page:

Download "Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:"

Transcription

1 SCOPE: QUAD, SPST, HIGH SPEED ANALOG SWITCH Device Type Generic Number SMD Number DG44A(x)/883B 56-04MC DG44A(x)/883B 56-04MC Case Outline(s). The case outlines shall be designated in Mil-Std-835 and as follows: Outline Letter Mil-Std-835 Case Outline Package Code MAXIM SMD K E GDIP-T6 or CDIP-T6 6 LEAD CERDIP J6 Z CQCC-N0 0-Pin Ceramic LCC L0 Absolute Maximum Ratings Voltage Referenced to V - V + to V V V - to GND... 5V Digital Inputs to V- /... (GND-0.3V) to 44V dc Digital Inputs, V S, V D /...(V - ) -V to (V + )+V or 30mA whichever occurs first Continuous Current, Any terminal... 30mA Peak Current, S or D (Pulsed at ms, 0% duty cycle max)... 40mA Lead Temperature (soldering, 0 seconds) C Storage Temperature C to +50 C Continuous Power Dissipation T A =+70 C 6 lead CERDIP(derate 0.0mW/ C above +70 C) mW 0 lead LCC (derate.mw/ C above +70 C) mW Junction Temperature T J C Thermal, Junction to Case, ΘJC: Case Outline 6 lead CERDIP C/W Case Outline 0 lead LCC C/W Thermal, Junction to Ambient, ΘJA: Case Outline 6 lead CERDIP C/W Case Outline 0 lead LCC C/W Recommended Operating Conditions Ambient Operating Range (T A ) C to +5 C Positive Supply Voltage (V + ) V Negative Supply Voltage (V - ) V V AL (max) V V AH (min) v NOTE : Signals on S, D, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward current to maximum current ratings. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Electrical Characteristics of DG44A/DG44A/883B -037 Rev. B for SMD Page of 7

2 TABLE. ELECTRICAL TESTS: TEST SWITCH Analog-Signal Range Source-OFF Source-OFF Drain-OFF Drain-OFF Channel-On Channel-On INPUT Input Current/Voltage High Input Current/Voltage Low SUPPLY Positive Supply Current Symbol CONDITIONS -55 C <=T A <= +5 C V + =+5V, V - =-5V, GND=0V V AH =.4V, V AL =0.8V Unless otherwise specified Group A Subgroup Device type Min Max V ANALOG,,3-5 5 V I S(OFF) I S(OFF) I D(OFF) I D(OFF) I D(ON) + I S(ON) I D(ON) + I S(ON) I INH I S =-0mA, V D =±8.5V, V + =3.5V, V - =-3.5V, V IN =0.8V I S =-0mA, V D =±8.5V, V + =3.5V, V - =-3.5V, V IN =.4V I S =-0mA, V D =3.0V, V + =0.8V, V - =0V, V IN =0.8V I S =-0mA, V D =8.0V, V + =0.8V, V - =0V, V IN =0.8V I S =-0mA, V D =3.0V, V + =0.8V, V - =0V, V IN =.4V I S =-0mA, V D =8.0V, V + =0.8V, V - =0V, V IN =.4V V + =6.5V, V - =-6.5V, V IN =.4V V S =±5.5V V D =±5.5V V + =6.5V, V - =-6.5V, V IN =0.8V V S =±5.5V V D =±5.5V V + =6.5V, V - =-6.5V, V IN =.4V V S =±5.5V V D =±5.5V V + =6.5V, V - =-6.5V, V IN =0.8V V S =±5.5V V D =±5.5V V + =6.5V, V - =-6.5V, V IN =0.8V V S =±5.5V V D =±5.5V V + =6.5V, V - =-6.5V, V IN =.4V V S =±5.5V V D =±5.5V V IN under test =.4V other =0.8V I INL V IN under test = 0.8V other =.4V I+ V + =6.5V, V - =-6.5V, V + =3.V, V - =0V,,3,3,3,3,3, Units,,3 - + µa,,3 - + µa,,3 0. ma Electrical Characteristics of DG44A/DG44A/883B -037 Rev. B for SMD Page 3 of 7

3 TEST Negative Supply Current Ground Current TABLE. ELECTRICAL TESTS: CONDITIONS -55 C <=T A <= +5 C Symbol V + =+5V, V - =5V, GND=0V V AH =.4V, V AL =0.8V Unless otherwise specified I- V + =6.5V, V - =-6.5V, V + =3.V, V - =0V, V + =6.5V, V - =-6.5V, Group A Subgroup Device type Min Max I GND,,3-00 µa V + =3.V, V - =0V, Functional Tests FT Verify the Truth Table 7,8 DYNAMIC Turn-On Time t ON V S =±0V, R L =k, C L =35pF ns Units µa 0, V S =8.0V, R L =k, C L =35pF V+=+V, V-=0V OFF V S =±0V, R L =k, C L =35pF Figure 0, 0, ns V S =8.0V, R L =k, C L =35pF V+=+V, V-=0V,0, 00 ORDERING INFORMATION: SMD NUMBER Pkg. Code DG44AK/883B 56-04MEA 6 CDIP DG44AZ/883B 56-04MC 0 LCC DG44AK/883B 56-04MEA 6 CDIP DG44AZ/883B 56-04MC 0 LCC Electrical Characteristics of DG44A/DG44A/883B -037 Rev. B for SMD Page 4 of 7

4 TRUTH TABLE TERMINAL CONNECTION LOGIC DG44A SWITCH TERMINAL NUMBER DG44A DG44A DG44A DG44A 0 ON J6 0LCC J6 0LCC OFF IN NC IN NC D IN D IN 3 S D S D LOGIC DG44A 4 V- S V- S SWITCH 5 GND V- GND V- 0 OFF 6 S4 NC S4 NC ON 7 D4 GND D4 GND 8 IN4 S4 IN4 S4 IN3 D4 IN3 D4 0 D3 IN4 D3 IN4 S3 NC S3 NC NC IN3 NC IN3 3 V+ D3 V+ D3 4 S S3 S S3 5 D NC D NC 6 IN NC IN NC 7 V+ V+ 8 S S D D 0 IN IN Electrical Characteristics of DG44A/DG44A/883B -037 Rev. B for SMD Page 5 of 7

5 QUALITY ASSURANCE Sampling and inspection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in Mil- Std-883. Screening shall be in accordance with Method 5004 of Mil-Std-883. Burn-in test Method 5:. Test Condition, A, B, C, or D.. TA = +5 C minimum. 3. Interim and final electrical test requirements shall be specified in Table. Quality conformance inspection shall be in accordance with of Mil-Std-883, including Groups A, B, C, and D inspection. Group A inspection:. Tests as specified in Table.. Selected subgroups in Table, of Mil-Std-883 shall be omitted. Group C and D inspections: a. End-point electrical parameters shall be specified in Table. b. Steady-state life test, Method 005 of Mil-Std-883:. Test condition A, B, C, D.. TA = +5 C, minimum. 3. Test duration, 000 hours, except as permitted by Method 005 of Mil-Std-883. TABLE. ELECTRICAL TEST REQUIREMENTS Mil-Std-883 Test Requirements Interim Electric Parameters Method 5004 Final Electrical Parameters Group A Test Requirements Group C and D End-Point Electrical Parameters Subgroups per, Table *,, 3,,, 3, 7, 8,,0, * PDA applies to Subgroup only Electrical Characteristics of DG44A/DG44A/883B -037 Rev. B for SMD Page 6 of 7

Device Type Generic Number Circuit Function 01 DG406A(x)/883B 16-Channel Analog Multiplexer 02 DG407A(x)/883B Dual 8-Channel Analog Multiplexer

Device Type Generic Number Circuit Function 01 DG406A(x)/883B 16-Channel Analog Multiplexer 02 DG407A(x)/883B Dual 8-Channel Analog Multiplexer SCOPE: IMPROVED 6-CHANNEL/DUAL 8-CHANNEL, HIGH PERFORMANCE CMOS ANALOG MULTIPLEXER Device Type Generic Number Circuit Function 0 DG406A(x)/883B 6-Channel Analog Multiplexer DG407A(x)/883B Dual 8-Channel

More information

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: +SCOPE: TTL COMPATIBLE CMOS ANALOG SWITCHES Device Type Generic Number 0 DG300A(x)/883B 02 DG30A(x)/883B 03 DG302A(x)/883B 04 DG303A(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-835

More information

CMOS HIGHSPEED 8-BIT A/D CONVERTER WITH TRACK AND HOLD. Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

CMOS HIGHSPEED 8-BIT A/D CONVERTER WITH TRACK AND HOLD. Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: SCOPE: CMOS HIGHSPEED 8-BIT A/D CONVERTER WITH TRACK AND HOLD Device Type Generic Number 01 MX7824T(x)/883B 02 MX7824U(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and

More information

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: SCOPE: CMOS, BUFFERED, MULTIPLYING 8-BIT D/A CONVERTER Type Generic Number Circuit Function 0 MX7528S(x)/883B DAC with ±4 LSB 02 MX7528T(x)/883B DAC with ±2 LSB 03 MX7528U(x)/883B DAC with ± LSB Case Outline(s).

More information

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: SCOPE: CMOS, BUFFERED, MULTIPLYING 8-BIT D/A CONVERTER Device Type Generic Number Circuit Function 0 MX7528S(x)/883B DAC with ±4 LSB 02 MX7528T(x)/883B DAC with ±2 LSB 03 MX7528U(x)/883B DAC with ± LSB

More information

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, SCHOTTKY TTL, FLIP-FLOPS, CASCADABLE, MONOLITHIC SILICON

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, SCHOTTKY TTL, FLIP-FLOPS, CASCADABLE, MONOLITHIC SILICON INCH-POUND 2 November 2005 SUPERSEDING MIL-M-38510/71C 23 July 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, SCHOTTKY TTL, FLIP-FLOPS, CASCADABLE, MONOLITHIC SILICON This specification is

More information

MICROCIRCUITS, DIGITAL, TTL, FLIP-FLOPS, MONOLITHIC SILICON. Inactive for new design after 7 September 1995

MICROCIRCUITS, DIGITAL, TTL, FLIP-FLOPS, MONOLITHIC SILICON. Inactive for new design after 7 September 1995 MILITARY SPECIFICATION INCH-POUND MIL-M-38510/2G 8 February 2005 SUPERSEDING MIL-M-38510/2E 24 December 1974 MIL-M-0038510/2F (USAF) 24 OCTOBER 1975 MICROCIRCUITS, DIGITAL, TTL, FLIP-FLOPS, MONOLITHIC

More information

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, DECODERS MONOLITHIC SILICON. Inactive for new design after 7 September 1995.

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, DECODERS MONOLITHIC SILICON. Inactive for new design after 7 September 1995. INCH-POUND 16 February 2005 SUPERSEDING MIL-M-38510/10C 3 March 1986 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, DECODERS MONOLITHIC SILICON This specification is approved for use by all

More information

MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, FLIP-FLOPS, CASCADABLE, MONOLITHIC SILICON. Inactive for new design after 18 April 1997.

MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, FLIP-FLOPS, CASCADABLE, MONOLITHIC SILICON. Inactive for new design after 18 April 1997. INCH-POUND MIL-M-38510/301F 4 March 2004 SUPERSEDING MIL-M-38510/301E 14 February 2003 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, FLIP-FLOPS, CASCADABLE, MONOLITHIC

More information

MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS/ANALOG MULTIPLEXERS/DEMULTIPLEXERS WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON, POSITIVE LOGIC

MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS/ANALOG MULTIPLEXERS/DEMULTIPLEXERS WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON, POSITIVE LOGIC INCH-POUND 12 October 2005 SUPERSEDING MIL-M-38510/190C 22 October 1986 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS/ANALOG MULTIPLEXERS/DEMULTIPLEXERS WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON,

More information

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, MONOSTABLE MULTIVIBRATORS, MONOLITHIC SILICON

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, MONOSTABLE MULTIVIBRATORS, MONOLITHIC SILICON INCH-POUND MIL-M-38510/12J 22 February 2005 SUPERSEDING MIL-M-38510/12H 16 December 2003 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, MONOSTABLE MULTIVIBRATORS, MONOLITHIC SILICON This

More information

NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset

NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset Description: The NTE74HC109 is a dual J K flip flip with set and reset in a 16 Lead plastic DIP

More information

MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, COUNTERS, MONOLITHIC SILICON. Inactive for new design after 18 April 1997.

MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, COUNTERS, MONOLITHIC SILICON. Inactive for new design after 18 April 1997. INCH-POUND MIL-M-38510/315D 27 October 2003 SUPERSEDING MIL-M-38510/315C 17 JANUARY 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, COUNTERS, MONOLITHIC SILICON This specification

More information

DLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, CMOS SPDT SWITCH, MONOLITHIC SILICON REVISIONS

DLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, CMOS SPDT SWITCH, MONOLITHIC SILICON REVISIONS REVISIONS LTR DESCRIPTION DTE PPROVED Prepared in accordance with SME Y14.24 Vendor item drawing REV PGE REV PGE REV STTUS OF PGES REV PGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 PMIC N/ PREPRED BY RICK OFFICER

More information

PS381/PS383/PS385. Precision, 17V Analog Switches. Features. Applications. Functional Diagrams, Pin Configurations, and Truth Tables

PS381/PS383/PS385. Precision, 17V Analog Switches. Features. Applications. Functional Diagrams, Pin Configurations, and Truth Tables 79797979797979797979797979 Features Low On-Resistance (Ω typ) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors in Sample-and-Holds. Charge Injection, pc typ Single Supply (+V to

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements R. MONNIN

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements R. MONNIN REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. 02-11-20 R. MONNIN B Part of 5 year review update. -rrp 09-06-20 J. RODENBEK Update document paragraphs

More information

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD. Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V

More information

Low-Leakage, CMOS Analog Multiplexers

Low-Leakage, CMOS Analog Multiplexers / General Description The / are monolithic, CMOS analog multiplexers (muxes). The 8-channel is designed to connect one of eight inputs to a common output by control of a 3-bit binary address. The dual,

More information

DATASHEET HI-390. Features. Ordering Information. Pinout Switch States shown for a Logic 1 Input. Applications. Functional Diagram

DATASHEET HI-390. Features. Ordering Information. Pinout Switch States shown for a Logic 1 Input. Applications. Functional Diagram HI-39 Dual SPDT CMOS nalog Switch NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLCEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc DTSHEET FN7 Rev 1. ugust The Hl-39

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Update to current requirements. Editorial changes throughout. - gap Raymond Monnin

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Update to current requirements. Editorial changes throughout. - gap Raymond Monnin REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to current requirements. Editorial changes throughout. - gap 06-10-05 Raymond Monnin Remove class M references. Update drawing to current MIL-PRF-38535

More information

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, LINEAR, PRECISION TIMER, MONOLITHIC SILICON

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, LINEAR, PRECISION TIMER, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV REV 15 16 17 REV STATUS REV OF S 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

More information

Battery Disconnect Switch

Battery Disconnect Switch New Product Battery Disconnect Switch Solution for Bi-Directional Blocking Bi-Directional Conduction Switch 6- to 30-V Operation Ground Referenced Logic Level Inputs Integrated Low r DS(on) MOSFET Level-Shifted

More information

Precision, 16-Channel/Dual 8-Channel, Low-Voltage, CMOS Analog Multiplexers

Precision, 16-Channel/Dual 8-Channel, Low-Voltage, CMOS Analog Multiplexers / Precision, 6-Channel/Dual 8-Channel, General Description The / low-voltage, CMOS analog multiplexers (muxes) offer low on-resistance (Ω max), which is matched to within 6Ω between switches and remains

More information

Precision, 8-Channel/Dual 4-Channel, High-Performance, CMOS Analog Multiplexers

Precision, 8-Channel/Dual 4-Channel, High-Performance, CMOS Analog Multiplexers 9-027; Rev 2; 8/02 Precision, 8-Channel/Dual 4-Channel, General Description The / precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than 0Ω), which is matched to within

More information

Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected

Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected Standard Products ACT8513 48-Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected www.aeroflex.com/mux November 17, 2008 FEATURES 48 channels provided by three -channel multiplexers Radiation

More information

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, LINEAR, 4-CHANNEL DIFFERENTIAL, ANALOG MULTIPLEXER, MONOLITHIC SILICON

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, LINEAR, 4-CHANNEL DIFFERENTIAL, ANALOG MULTIPLEXER, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DTE (YR-MO-D) PPROVED Update boilerplate paragraphs to current MIL-PRF-38535 requirements. Delete references to device class M requirements. - ro 12-10-29 C. SFFLE REV REV REV

More information

Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected

Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected Standard Products ACT8511 64-Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected www.aeroflex.com/mux November 14, 2008 FEATURES 64-channels provided by four -channel multiplexers Radiation

More information

Improved Quad CMOS Analog Switches

Improved Quad CMOS Analog Switches Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary

More information

Low-Voltage, 8-Channel/Dual 4-Channel Multiplexers with Latchable Inputs

Low-Voltage, 8-Channel/Dual 4-Channel Multiplexers with Latchable Inputs 9-396; Rev. ; 5/95 Low-Voltage, 8-Channel/Dual 4-Channel General Description The are low-voltage, CMOS, -of-8 and dual 4-channel muxes with latchable digital inputs. They feature low-voltage operation

More information

ORGANIZATION AND APPLICATION The MUX8523 consists of two independent 16 channel multiplexers arranged as shown in the block diagram.

ORGANIZATION AND APPLICATION The MUX8523 consists of two independent 16 channel multiplexers arranged as shown in the block diagram. Standard Products MUX8523 Dual 16-Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected www.aeroflex.com/mux May 17, 2011 FEATURES 32-channels provided by two independent 16-channel multiplexers

More information

P4C164 ULTRA HIGH SPEED 8K X 8 STATIC CMOS RAMS FEATURES DESCRIPTION. Full CMOS, 6T Cell. Common Data I/O

P4C164 ULTRA HIGH SPEED 8K X 8 STATIC CMOS RAMS FEATURES DESCRIPTION. Full CMOS, 6T Cell. Common Data I/O FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) 8/10/12/15/20/25/35/70/100 ns (Commercial) 10/12/15/20/25/35/70/100 ns(industrial) 12/15/20/25/35/45/70/100 ns (Military) Low Power

More information

ORGANIZATION AND APPLICATION The MUX8532 consists of two independent 16 channel multiplexers arranged as shown in the block diagram.

ORGANIZATION AND APPLICATION The MUX8532 consists of two independent 16 channel multiplexers arranged as shown in the block diagram. Standard Products MUX8532 Dual 16-Channel Analog Multiplexer Module Radiation Tolerant www.aeroflex.com/mux May 17, 2011 FEATURES 32-channels provided by two independent 16-channel multiplexers Radiation

More information

LOW HIGH OFF ON. Maxim Integrated Products 1

LOW HIGH OFF ON. Maxim Integrated Products 1 9-79; Rev ; /07 Low-Voltage, Quad, SPST General Description The MAX0/MAX/MAX are quad, low-voltage, single-pole/single-throw (SPST) analog switches. On-resistance (00Ω, max) is matched between switches

More information

Datasheet. Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected

Datasheet. Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected Standard Products ACT8500 64-Channel Analog Multiplexer Module Radiation Tolerant & ESD Protected www.aeroflex.com/mux May 5, 2014 FEATURES 64-Channels provided by six -channel multiplexers Radiation performance

More information

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DECADE COUNTERS, MONOLITHIC SILICON

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DECADE COUNTERS, MONOLITHIC SILICON INCH-POUND MIL-M-38510/344A 14 April 2004 SUPERSEDING MIL-M-38510/344 12 June 1986 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DECADE COUNTERS, MONOLITHIC SILICON This

More information

Reactivated after 17 Jan and may be used for new and existing designs and acquisitions.

Reactivated after 17 Jan and may be used for new and existing designs and acquisitions. C-POUND MI-M-38510/653 17 January 2006 SUPERSEDG MI-M-38510/653 15 January 1988 MIITRY SPECIFICTION MICROCIRCUITS, DIGIT, IG-SPEED CMOS, FIP-FOPS, MONOITIC SIICON, POSITIVE OGIC This specification is approved

More information

2Ω, Quad, SPST, CMOS Analog Switches

2Ω, Quad, SPST, CMOS Analog Switches 9-73; Rev ; 4/ 2Ω, Quad, SPST, CMOS Analog Switches General Description The // quad analog switches feature.6ω max on-resistance (R ) when operating from a dual ±5V supply. R is matched between channels

More information

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, LINEAR, CMOS 8-BIT DAC WITH OUTPUT AMPLIFIER, MONOLITHIC SILICON

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, LINEAR, CMOS 8-BIT DAC WITH OUTPUT AMPLIFIER, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DTE (YR-MO-D) PPROVED Drawing updated to reflect current requirements. - ro 03-01-28 R. MONNIN REV REV REV STTUS REV OF S 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/ STNDRD MICROCIRCUIT

More information

Datasheet. Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant

Datasheet. Standard Products ACT Channel Analog Multiplexer Module Radiation Tolerant Standard Products ACT8506 48-Channel Analog Multiplexer Module Radiation Tolerant www.aeroflex.com/mux May 5, 2014 Datasheet FEATURES 48 channels provided by six 16-channel multiplexers Radiation performance

More information

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

SSF7NS65UF 650V N-Channel MOSFET

SSF7NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com

More information

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely

More information

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MD088 Supersedes data of October 199 1996 Mar 19 FEATURES Low forward voltage Guard ring protected Very small SMD package. APPLICATIONS Ultra high-speed

More information

MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer

MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer General Description The MM74C150 and MM82C19 multiplex 16 digital lines to 1 output. A 4-bit address code determines

More information

NTE74HC299 Integrated Circuit TTL High Speed CMOS, 8 Bit Universal Shift Register with 3 State Output

NTE74HC299 Integrated Circuit TTL High Speed CMOS, 8 Bit Universal Shift Register with 3 State Output NTE74HC299 Integrated Circuit TTL High Speed CMOS, 8 Bit Universal Shift Register with 3 State Output Description: The NTE74HC299 is an 8 bit shift/storage register with three state bus interface capability

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON, POSITIVE LOGIC

MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON, POSITIVE LOGIC MIITARY SPECIFICATION MICROCIRCUITS, DIGITA, CMOS, STATIC SIFT REGISTER, MONOITIC SIICON, POSITIVE OGIC This specification is approved for use by all Departments and Agencies of the Department of Defense.

More information

ORDERING INFORMATION T A PACKAGE ORDERABLE PARTNUMBER. SOIC - D -40 to 85 SOP NS Reel of 2000 MC74HC164NSR HC164

ORDERING INFORMATION T A PACKAGE ORDERABLE PARTNUMBER. SOIC - D -40 to 85 SOP NS Reel of 2000 MC74HC164NSR HC164 Wide Operating Voltage Range of 2 V to 6V Outputs Can Drive Up To 10 LSTTL Loads Low Power Consumption, 80- A Max I CC Typical t pd =20 ns 4-mA Output Drive at 5V Low Input Current of 1 A Max AND-Gated

More information

DATASHEET CD40109BMS. Features. Description. Applications. Functional Diagram. Pinout. CMOS Quad Low-to-High Voltage Level Shifter

DATASHEET CD40109BMS. Features. Description. Applications. Functional Diagram. Pinout. CMOS Quad Low-to-High Voltage Level Shifter DATASHEET CD19BMS CMOS Quad Low-to-High Voltage Level Shifter Features High Voltage Type (V Rating) Independence of Power Supply Sequence Considerations - can Exceed - Input Signals can Exceed Both and

More information

AO7401 P-Channel Enhancement Mode Field Effect Transistor

AO7401 P-Channel Enhancement Mode Field Effect Transistor Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,

More information

B C E. absolute maximum ratings at 25 C ambient temperature (unless otherwise noted )

B C E. absolute maximum ratings at 25 C ambient temperature (unless otherwise noted ) Designed Specifically for High Frequency Electronic Ballasts up to 5 W h FE 6 to at = V, = A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible

More information

DG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118.

DG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118. Data Sheet FN3118.4 SPST 4-Channel Analog Switch The is a low cost, CMOS monolithic, Quad SPST analog switch. It can be used in general purpose switching applications for communications, instrumentation,

More information

AO3411 P-Channel Enhancement Mode Field Effect Transistor

AO3411 P-Channel Enhancement Mode Field Effect Transistor January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate

More information

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

More information

AO4620 Complementary Enhancement Mode Field Effect Transistor

AO4620 Complementary Enhancement Mode Field Effect Transistor AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409 a FEATURES 44 upply Maximum Ratings to Analog Signal Range Low On Resistance ( max) Low Power (I SUPPLY < 75 A) Fast Switching Break-Before-Make Switching Action Plug-in Replacement for G408/G409 APPLICATIONS

More information

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel

More information

High Speed Quad SPST CMOS Analog Switch

High Speed Quad SPST CMOS Analog Switch High Speed Quad SPST CMOS Analog Switch HI-21HS/883 The HI-21HS/883 is a monolithic CMOS analog switch featuring very fast switching speeds and low ON resistance. This integrated circuit consists of four

More information

SGM48753 CMOS Analog Switch

SGM48753 CMOS Analog Switch GENERAL DESCRIPTION The is a CMOS analog IC configured as three single-pole/double-throw (SPDT) switches. This CMOS device can operate from 2.5V to 5.5V single supplies. Each switch can handle rail-to-rail

More information

Features. T A =25 o C unless otherwise noted

Features. T A =25 o C unless otherwise noted NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell

More information

POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR

POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR Registration No.98 JAXA-QTS-23/A Superseding JAXA-QTS-23/ Cancelled POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR 448, 449, 45 45, 452, 453 454, 455,

More information

AOT404 N-Channel Enhancement Mode Field Effect Transistor

AOT404 N-Channel Enhancement Mode Field Effect Transistor AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

More information

Reactivated after 10 Aug and may be used for new and existing designs and acquisitions.

Reactivated after 10 Aug and may be used for new and existing designs and acquisitions. INC-POUND 10 August 2004 SUPERSEDING MI-M-38510/175B 30 April 1984 MIITARY SPECIFICATION MICROCIRCUITS, DIGITA, CMOS, POSITIVE OGIC, FIP-FOPS AND MONOSTABE MUTIVIBRATOR, MONOITIC SIICON Reactivated after

More information

INTEGRATED CIRCUITS. 74LV688 8-bit magnitude comparator. Product specification Supersedes data of 1997 May 15 IC24 Data Handbook.

INTEGRATED CIRCUITS. 74LV688 8-bit magnitude comparator. Product specification Supersedes data of 1997 May 15 IC24 Data Handbook. INTEGRATED CIRCUITS Supersedes data of 1997 May 15 IC24 Data Handbook 1998 Jun 23 FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for low voltage applications: 1.0V to 3.6V Accepts TTL input levels

More information

Monolithic CMOS Analog Multiplexers

Monolithic CMOS Analog Multiplexers 19-008; Rev 3; 9/01 Monolithic CMOS Analog Multiplexers General escription Maxim s and are monolithic CMOS analog multiplexers (muxes): the is a single 8-channel (1-of-8) mux, and the is a differential

More information

NTE74HC165 Integrated Circuit TTL High Speed CMOS, 8 Bit Parallel In/Serial Out Shift Register

NTE74HC165 Integrated Circuit TTL High Speed CMOS, 8 Bit Parallel In/Serial Out Shift Register NTE74HC165 Integrated Circuit TTL High Speed CMOS, 8 Bit Parallel In/Serial Out Shift Register Description: The NTE74HC165 is an 8 bit parallel in/serial out shift register in a 16 Lead DIP type package

More information

PRELIMINARY SPECIFICATION

PRELIMINARY SPECIFICATION Positive Adjustable V tor AVAILABLE AS MILITARY / SPACE SPECIFICATIONS SMD 5962-99517 pending Radiation Tolerant MIL-STD-88, 1.2.1 QML pending FEATURES Guaranteed 0.5A Output Current Radiation Guaranteed

More information

LE Ω SECOND SOURCE BLEED RESISTORS PART. Maxim Integrated Products 1 MAX4800A MAX4802A. TQFP 7mm x 7mm ; Rev 0; 5/08 N.C. (RGND) TOP VIEW GND

LE Ω SECOND SOURCE BLEED RESISTORS PART. Maxim Integrated Products 1 MAX4800A MAX4802A. TQFP 7mm x 7mm ; Rev 0; 5/08 N.C. (RGND) TOP VIEW GND 19-4120; Rev 0; 5/08 Ω Ω μ TOP VIEW DIN VDD GND (RGND) VNN 36 35 34 33 32 31 30 29 28 27 26 25 PART BED RESISTORS SECOND SOURCE PIN- PACKAGE CXZ+* No 26 CSBGA CQI+ No HV2203PJ-G 28 PLCC CCM+* No HV2203FG-G

More information

Features. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units

Features. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units Dual Notebook Power Supply N-Channel PowerTrench SyncFet September General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide

More information

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation

More information

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers 8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers Low On-Resistance r S(on) : Low Charge Injection Q: pc Fast Transition Time t TRANS : 6 ns Low Power I SUPPLY : A Single Supply Capability 44-V Supply

More information

Features. Functional Diagrams, Pin Configurations, and Truth Tables

Features. Functional Diagrams, Pin Configurations, and Truth Tables Features Low On-Resistance (Ω typ) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors in Sample-and-Holds. Charge Injection, pc typ Single-Supply Operation (+.V to +1V) Improved

More information

AO V Dual P + N-Channel MOSFET

AO V Dual P + N-Channel MOSFET 4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters

More information

Radiation Performance Data Package MUX8522-S

Radiation Performance Data Package MUX8522-S March 15, 2010 Radiation Performance Data Package MUX8522-S MUX8522-S DSCC SMD Part Number: 5962-0923101KXC Dual 16 channel analog multiplexer, high impedance analog input. Prepared by: Aeroflex Plainview,

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with N.O.R R M. A. FRYE

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with N.O.R R M. A. FRYE RVISIONS LTR DSCRIPTION DAT (YR-MO-DA) APPROVD A Changes in accordance with N.O.R. 5962-R163-92. 92-03-26 M. A. FRY B Changes in accordance with N.O.R. 5962-R228-94. 94-07-27 M. A. FRY C Drawing updated

More information

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 Compliant P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N7236U switching transistor is military qualified up to the JANTXV level for highreliability

More information

P-channel enhancement mode MOS transistor

P-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION

More information

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 ,, & Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for

More information

COM COM GND MAX4644 OFF OFF

COM COM GND MAX4644 OFF OFF 9-7; Rev ; / High-Speed, Low-Voltage, 4, General Description The is a single-pole/double-throw (SPDT) switch that operates from a single supply ranging from +.V to +.V. It provides low 4 on-resistance

More information

Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers

Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers 9-27; Rev 3; 3/ Precision, 6-Channel/Dual 8-Channel, General Description The MA36/MA37 precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than Ω), which is matched to

More information

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1.

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1. AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 5 C Operating Temperature Lead-Free,

More information

onlinecomponents.com

onlinecomponents.com a FEATURES +.8 V to +. ingle Supply 2. V ual Supply 2. ON Resistance. ON Resistance Flatness pa Leakage Currents 4 ns Switching Times Single 6-to- Multiplexer AG76 ifferential 8-to- Multiplexer AG77 28-Lead

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity

More information

DATASHEET CD4093BMS. Features. Pinout. Functional Diagram. Applications. Description. CMOS Quad 2-Input NAND Schmitt Triggers

DATASHEET CD4093BMS. Features. Pinout. Functional Diagram. Applications. Description. CMOS Quad 2-Input NAND Schmitt Triggers DATASHEET CD9BMS CMOS Quad -Input NAND Schmitt Triggers FN Rev. December 199 Features High Voltage Types (V Rating) Schmitt Trigger Action on Each Input With No External Components Hysteresis Voltage Typically.9V

More information

CMOS, +1.8 V to +5.5 V/ 2.5 V, 2.5 Low-Voltage, 8-/16-Channel Multiplexers ADG706/ADG707 REV. A

CMOS, +1.8 V to +5.5 V/ 2.5 V, 2.5 Low-Voltage, 8-/16-Channel Multiplexers ADG706/ADG707 REV. A a FEATURES +.8 V to +. ingle Supply. V ual Supply. ON Resistance. ON Resistance Flatness pa Leakage Currents ns Switching Times Single -to- Multiplexer AG ifferential 8-to- Multiplexer AG 8-Lead TSSOP

More information

AOP606 Complementary Enhancement Mode Field Effect Transistor

AOP606 Complementary Enhancement Mode Field Effect Transistor AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise

More information

MM74HC151 8-Channel Digital Multiplexer

MM74HC151 8-Channel Digital Multiplexer 8-Channel Digital Multiplexer General Description The MM74HC151 high speed Digital multiplexer utilizes advanced silicon-gate CMOS technology. Along with the high noise immunity and low power dissipation

More information

LC 2 MOS Precision Analog Switch in MSOP ADG419-EP

LC 2 MOS Precision Analog Switch in MSOP ADG419-EP LC 2 MOS Precision Analog Switch in MSOP AG49-EP FEATURES 44 V supply maximum ratings VSS to V analog signal range Low on resistance:

More information

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG 3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant

More information

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 Available on commercial versions P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DESCRIPTION This switching transistor is military qualified up to the JANS level for high-reliability applications. This

More information

Description. For Fairchild s definition of Eco Status, please visit:

Description. For Fairchild s definition of Eco Status, please visit: FSA2357 Low R ON 3:1 Analog Switch Features 10µA Maximum I CCT Current Over an Expanded Control Voltage Range: V IN=2.6V, V CC=4.5V On Capacitance (C ON): 70pF Typical 0.55Ω Typical On Resistance (R ON)

More information