Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

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1 SCOPE: CMOS, BUFFERED, MULTIPLYING 8-BIT D/A CONVERTER Type Generic Number Circuit Function 0 MX7528S(x)/883B DAC with ±4 LSB 02 MX7528T(x)/883B DAC with ±2 LSB 03 MX7528U(x)/883B DAC with ± LSB Case Outline(s). The case outlines shall be designated in Mil-Std-835 and as follows: Outline Letter Mil-Std-835 Case Outline Package Code MAXIM SMD Q R GDIP-T or CDIP2-T LEAD CERDIP J Absolute imum Ratings: V DD to AGND V, + 7V V DD to DGND V, + 7V V RFBA, V RFBB to DGND.... ±25V V REFA, V REFB to AGND.... ±25V Digital Input Voltage to DGND V to V DD +0.3V V pin to DGND V to V DD V pin 2, V pin to AGND V to V DD +0.3V AGND to DGND V, V DD +0.3V DGND to AGND V Lead Temperature (soldering, seconds) C Storage Temperature C to + C Continuous Power Dissipation T A =+70 C pin CERDIP(derate.mW/ C above +70 C) mW Junction Temperature T J C Thermal Resistance, Junction to Case, ΘJC pin CERDIP C/W Thermal Resistance, Junction to Ambient, ΘJA: pin CERDIP C/W Recommended Operating Conditio Ambient Operating Range (T A ) C to +25 C Supply Voltage Range (V DD ) V to +5.25V and +4.25V to +5.75V V REF DAC A = V REF DAC B V OUT DAC A = OUT DAC B V Stresses beyond those listed under Absolute imum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditio beyond those indicated in the operational sectio of the specificatio is not implied. Exposure to absolute maximum rating conditio for extended periods may affect device reliability Electrical Characteristics of MX7528/883B Rev. B for SMD Page 2 of 7

2 TABLE. ELECTRICAL TESTS: TEST -55 C <=T A <= +25 C / ACCURACY Resolution NOTE 4 RES and, 8.0 Bits Relative Accuracy RA and, 0 ±.0 LSB Relative Accuracy RA and 02,03 ±.0 LSB ±0.5 Relative Accuracy RA &, NOTE ,03 ±0.5 LSB Differential Nonlinearity DNL and Monotonic to 8-Bits, ±.0 LSB Gain Error NOTE 3 AE and ±4.0 LSB, 2.0 Gain Error NOTE 3 AE 0 ±6.0 LSB ±5.0 Gain Error NOTE AE 02 ±4.0 ±3.0 LSB 2 ±2.0 ±.0 Gain Error NOTE AE ±3.0 LSB 03 ±.0, 2 ±.0 Power Supply Rejection PSRR, V DD =±5% ±0.02 %/% ±0.04 Power Supply Rejection PSRR, V DD =±5% ±0.0 %/% ±0.02 Output Leakage Current I OL, DAC latches loaded ± na PIN 2 and with ±400 Output Leakage Current I OL, DAC latches loaded ± na PIN 2 and with ± Reference Input R IN and +5V, 8 5 kω Resistance V REF A, V REF B Digital Input High V IH, 2.4 V Voltage 3.5 Digital Input Low V IL, 0.8 V Voltage.5 Digital Input Leakage I IN ±.0 µa Current V IN =0V or V DD ± Digital Input Leakage Current I IN V IN =0V or V DD ±.0 ± µa Supply Current I DD digital inputs ma V IL or V IH 2.0 Supply Current I DD & +5V. digital 0 µa inputs 0V or V DD 0 Gain Temperature Coefficient NOTE 4 TC AE, ±70 ±35 ppm/ C Electrical Characteristics of MX7528/883B Rev. B for SMD Page 3 of 7

3 TEST -55 C <=T A <= +25 C / Feedthrough Error V REF A to OUTA and V REF B to OUTB Digital Input Capacitance NOTE 6 Digital Input Capacitance NOTE 6 ANALOG INPUTS Digital Output pin 2 Capacitance 6/ pin Digital Output pin 2 Capacitance 6/ pin TIMING Chip select to write Chip select to write Write pulse width Data valid to write Data valid to write Data select to write FT REF A C IN C IN C OUTA C OUTB C OUTA C OUTB t CS t CH t WR t DS t DH t AS or, V REF =+V, 0kHz sinewave, DAC latches loaded with NOTE 4, NOTE 5 DB0-DB7 WR, CS, DACA/DACB and 5V, DAC latches loaded with and 5V, DAC latches loaded with, t CS t WR, t CH 0, t CS t WR, t CH 0 4,5,6-70 db , Electrical Characteristics of MX7528/883B Rev. B for SMD Page 4 of 7

4 TEST -55 C <=T A <= +25 C, / Data select to write Reference input resistance match Channel to Channel isolation NOTE 4 V REF A to OUTB Channel to Channel isolation NOTE 4 V REF B to OUTA Output Current Settling Time NOTE 4 t AH RMIN V REF CHISO CHISO t SL or +5V. V REF A=±V, 0kHz sinewave, V REF B=0V or +5V. V REF B=±V, 0kHz sinewave, DAC, V REF A=0V 30 5 ± 4,5,6 % ± 4,5,6 - db 4,5,6 - db, NOTE : V OUT =0V; VREF=+V, AGND=DGND unless otherwise specified. NOTE 2: Optional 2 is used for grading and part selection at +25 C. NOTE 3: Measured using internal RFBA and RFBB. Gain error is adjustable. DAC register loaded with,,. NOTE 4: Guaranteed, if not tested. NOTE 5: NOTE 6: : Feedthrough error can be reduced by connecting the metal lid to ground. 4 (C IN and C OUT measurements) shall be measured only for the inital test and after process or design changes which may affect capacitance. Timing in accordance with Write Cycle Timing Diagram in Commercial Data Sheet. MODE SELECTION TABLE: CS WR DAC A/DAC B DAC A DAC B L L L Write Hold L L H Hold Write H X X Hold Hold X H X Hold Hold L = Low state, H = High state, X = Don t care TERMINAL CONNECTIONS: Pin Pin AGND DB3 2 OUTA 2 DB2 3 RFBA 3 DB 4 VREFA 4 DB0(LSB) 5 DGND 5 CS 6 DAC A/DAC B 6 WR 7 (MSB)DB7 7 VDD 8 DB6 8 VREFB DB5 RFBB DB4 OUTB Electrical Characteristics of MX7528/883B Rev. B for SMD Page 5 of 7

5 ORDERING INFORMATION: Package Pkg. Code ID SMD Number 0 pin CERDIP J MX7528SQ/883B RA 02 pin CERDIP J MX7528TQ/883B RA 03 pin CERDIP J MX7528UQ/883B RA QUALITY ASSURANCE Sampling and ipection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in Mil- Std-883. Screening shall be in accordance with Method 04 of Mil-Std-883. Burn-in test Method 5:. Test Condition, A, B, C, or D. 2. TA = +25 C minimum. 3. Interim and final electrical test requirements shall be specified in Table 2. Quality conformance ipection shall be in accordance with Method 05 of Mil-Std-883, including Groups A, B, C, and D ipection. ipection:. Tests as specified in Table Selected subgroups in Table, Method 05 of Mil-Std-883 shall be omitted. Group C and D ipectio: a. End-point electrical parameters shall be specified in Table. b. Steady-state life test, Method 05 of Mil-Std-883:. Test condition A, B, C, D. 2. TA = +25 C, minimum. 3. Test duration, 00 hours, except as permitted by Method 05 of Mil-Std-883. TABLE 2. ELECTRICAL TEST REQUIREMENTS Mil-Std-883 Test Requirements Interim Electric Parameters Method 04 Final Electrical Parameters Method 05 Test Requirements Method 05 Group C and D End-Point Electrical Parameters Method 05 s per Method 05, Table *, 2, 3, 2, 2, 3, 4, 5, 6,, **, **, 2 * PDA applies to only. ** s and, if not tested shall be guaranteed to the limits specified in Table Electrical Characteristics of MX7528/883B Rev. B for SMD Page 6 of 7

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: SCOPE: CMOS, BUFFERED, MULTIPLYING 8-BIT D/A CONVERTER Device Type Generic Number Circuit Function 0 MX7528S(x)/883B DAC with ±4 LSB 02 MX7528T(x)/883B DAC with ±2 LSB 03 MX7528U(x)/883B DAC with ± LSB