Blaze/Blaze 3D. Device Simulator for Advanced Materials
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1 Blaze/Blaze 3D Device Simulator for Advanced Materials
2 Contents Introduction: What is Blaze? Purpose: Why use Blaze? Features Application examples Conclusions - 2 -
3 Introduction Blaze/Blaze 3D simulates devices fabricated using advanced materials A library of compound semiconductors, including ternary and quaternary materials are included within Blaze Blaze can simulate devices of arbitrary complexity Blaze can easily be used with other Silvaco modules to take into account different physical effects - 3 -
4 Key Benefits Built-in materials library that contains parameters for more than forty materials, selected materials include: GaAs AlGaAs InGaAs SiGe GaN SiC Custom materials - 4 -
5 Key Benefits (con t) Blaze/Blaze 3D can accommodate graded and abrupt heterojunctions Band gap discontinuities across a heterojunction can be easily adjusted Measurable DC, AC, and transient device characteristics can be simulated Calculated DC characteristics include threshold voltage, gain, leakage, punchthrough voltage, and breakdown behavior - 5 -
6 Key Benefits (con t) Calculated RF characteristics include cut-off frequency, s-, y-, h-, and z- parameters, maximum available gain, maximum stable gain, maximum frequency of oscillation, and stability factor Intrinsic switching times and Fourier analysis of periodic large-signal outputs can also be calculated - 6 -
7 Key Benefits (con t) Device structure may be specified by the user within Atlas, or by the output of a process simulator, such as Athena, or through Silvaco s device editor, DevEdit Boltzmann and Fermi-Dirac statistics with band gap narrowing due to heavy doping can be chosen. Thermionic emission at abrupt junctions can easily be accounted for Seemless interface to other Silvaco modules, e.g. Quantum for quantum mechanical confinement effects, Luminous for optical generation effect - 7 -
8 Key Benefits (con t) Drift-diffusion and energy balance transport models with advanced mobility models Trap dynamics for DC, transient, and AC Models for Schottky-Read-Hall, optical, and Auger recombination, impact ionization, band-to-band and Fowler-Nordheim tunneling, hot carrier injection, Ohmic and Schottkly contacts, and floating gates C-Interpreter interface allows user-defined model and material parameters - 8 -
9 Applications Advanced material devices Heterostructure devices APDs, HBTs, MESFET, HEMT, PHEMT Gaining insight into physical behavior Temperature behavior of advanced devices Device design for optimum performance reducing costly experimental investigations Identifying critical elements to the performance of the device - 9 -
10 Typical input deck within DeckBuild go atlas! mesh! x.mesh loc=0.0 spac=0.05! x.mesh loc=0.3 spac=0.05! x.mesh loc=0.6 spac=0.05! x.mesh loc=1.0 spac=0.05! y.mesh loc=0.0 spac=0.02! y.mesh loc=0.15 spac=0.01! y.mesh loc=0.22 spac=0.005! y.mesh loc=0.3 spac=0.05! y.mesh loc=1.0 spac=0.07! region num=1 material=oxide! region num=2 material=ingaas x.min=0.0 x.max=0.3 y.min=0.0 y.max=0.15 x.comp=0.47! region num=3 material=inp x.min=0.0 x.max=0.3 y.min=0.15 y.max=0.22! region num=4 material=ingaas x.min=0.0 x.max=0.6 y.min=0.22 y.max=0.3 x.comp=0.47! region num=5 material=inp x.min=0.0 x.max=1.0 y.min=0.3 y.max=1.0! electrode num=1 name=emitter x.min=0.0 x.max=0.3 y.min=0.0 y.max=0.0! electrode num=2 name=base x.min=0.45 x.max=0.6 y.min=0.22 y.max=0.22! electrode num=3 name=collector bottom! doping x.min=0.0 x.max=1.0 y.min=0.0 y.max=1.0 n.type ascii infile=hbtex08_n! doping x.min=0.0 x.max=1.0 y.min=0.0 y.max=1.0 p.type ascii infile=hbtex08_p! material material=inp align=0.65material material=ingaas mun0=10000 mup0=400! material taun0=1e-9 taup0=1e-9! model fermi auger print! method climit=1e-4! output band.param con.band val.band! solve init! solve previous! save outf=hbtex08.str! tonyplot hbtex08.str set hbtex08_doping.set! solve v3=0.0001! solve v3=0.001! solve v3=0.01! solve v3=0.1! solve v3=2! solve v2=0.0001! solve v2=0.001! solve v2=0.01! solve v2=0.1! log outf=hbtex08_iv.log! solve v2=0.05 vstep=0.2 vfinal=1.5 electrode=2! quit!
11 Typical Frequency Analysis input deck # Frequency analysis! go atlas! mesh infile=hbtex08.str! material material=inp align=0.65! material material=ingaas mun0=10000 mup0=400! material taun0=1e-9 taup0=1e-9model fermi auger print! method climit=1e-4! output band.param con.band val.band! load infile=hbtex08.str master! solve previous! solve v3= ac freq=1e6! solve v3=0.1 ac freq=1e6! solve v3=1.0 ac freq=1e6! solve v2= ac freq=1e6! solve v2=0.1 ac freq=1e6! solve v2=1.0 ac freq=1e6! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=1 fstep=10 nfstep=7 mult.freq! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=2e7! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=4e7! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=6e7! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=1e8! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=2e8! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=4e8! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=1e9! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=2.5e9! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=3.5e9! solve v2=1.0 v3=1.0 vstep=0.025 electrode=23 ac freq=2.2e10! quit! log outf=hbtex08_freq.log gains inport=base outport=collector width=50!
12 Readily Accessible Material Parameters ATLAS> model fermi auger print! ATLAS> method climit=1e-4! CONSTANTS: Boltzmann's constant = e-23 J/K! Elementary charge = e-19 C! Permittivity in vacuum = e-14 F/cm! Temperature = 300 K! Thermal voltage = V! REGIONAL MATERIAL PARAMETERS: Region : ! Material : Oxide InGaAs InP InGaAs InP Conductor Conductor Conductor! Type : insulator semicond. semicond. semicond. semicond. metal metal metal! Epsilon : ! Band Parameters Eg (ev) : ! Chi (ev) : ! Nc (per cc) : 1.52e e e e+17! Nv (per cc) : 8.12e e e e+19! ni (per cc) : 7.61e e e e+07!.!.!.!
13 Complete HEMT and PHEMT Characterization A HEMT with an AlGaAs/ InGaAs/GaAs layer structure has been defined using the graphical structure editor DevEdit Angled sidewalls of the GaAs layer have been created via DevEdit A recessed gate has been included in the design, as well as several buffer layers and delta doped regions
14 Complete HEMT and PHEMT Characterization One dimensional cutline can be taken anywhere through the structure using TonyPlot Band diagram taken through the gate of the HEMT Discontinuities in potential are seen at the heterojunctions These discontinuities can easily be adjusted
15 Application Example: HEMT and PHEMT Simulation Solution files produced by Blaze contain internal device variables, such as electron concentration The Schottky barrier creates a depletion layer below the gate. Electrons accumulate in the narrow band-gap materials in the channel
16 Complete HEMT and PHEMT Characterization Log file outputs from Blaze contain electrical behavior information. An Id/Vds plot is shown for several Vgs values Extraction of device parameters can be performed on these curves
17 Complete HEMT and PHEMT Characterization (con t) AC analysis can be performed and s-parameters extracted from the results s-parameters are displayed for this device for frequencies up to 50 GHz Simulation well over 100GHz also possible
18 Complete HBT Analysis Using DevEdit/DevEdit 3D a non-planar HBT structure can be created for simulation by Blaze/Blaze 3D An InGaAs/InP HBT structure is illustrated here DevEdit performs automatic meshing for use in Blaze/Blaze 3D
19 Complete HBT Analysis (con t) Tools within TonyPlot allow easy manipulation of the output data Band diagram of an HBT through the intrinsic region
20 Complete HBT Analysis (con t) AC analysis of the HBT provides gain vs. frequency plots, s-parameter extraction, and can predict the gain roll off with frequency
21 Complete HBT Analysis (con t) Blaze/Blaze 3D is used to generate Gummel plots for HBTs Additional quantities, such as device gain can also be displayed
22 Complete HBT Analysis (con t) BVCEO of an HBT Impact ionization models allow simulation of breakdown voltages
23 SiGe Technologies In addition to III-V based devices, Blaze/Blaze3D can simulate any compound or elemental semiconductor materials Users can also easily enter their own custom materials with associated parameter values
24 SiGe Technologies (con t) SiGe HBT Recombination in the base of a SiGe HBT
25 SiGe Technologies (con t) Examples of results from a Si/SiGe HBT simulation Gain of the SiGe HBT
26 Negative-Differential Mobility III-V materials have a negative differential mobility Blaze/Blaze3D simulates this effect as illustrated by the output oscillations of a GaAs Gunn diode
27 GaAs MESFET Ion implanted MESFET structure generated using Athena and Flash Electron concentration can easily be displayed
28 GaAs MESFET (con t) In gate current analysis and MESFET breakdown, tunneling at Schottky contacts is an important mechanism Thermionic emission and tunneling may also be included
29 GaAs MESFET (con t) Blaze/Blaze3D allows definition of arbitrary trap levels Traps can dominate the DC, switching, and RF performance of III-V devices Effect of EL2 traps on MESFET turn-off
30 GaAs MESFET (con t) Difference between a standard drift diffusion and energy balance simulation Blaze/Blaze 3D includes energy balance models to simulate the effects of non-local carrier behavior
31 Conclusion Silvaco s advanced material device simulator Blaze has been discussed Any arbitrary semiconductor device can be simulated Comprehensive built in material parameter database for over 40 materials Runs seamlessly with Silvaco s other TCAD tools C-Interpreter interface allows user-defined model and material parameters Ease of use within the DeckBuild environment
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