(Preliminary version) Operating Junction and Storage Temperature Range SSP4060NL. N-Channel Enhancement Mode MOSFET FEATURES TO-220.
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1 Nhnnel Enhncement Mde MOFET D () 6 FETURE Prduct ummry TO ID () RD(ON) (mω) = = 5 D uper high density cell design fr lw RD(ON). Rugged nd relible. TO pckge. Pb free. BOLUTE MXIMUM RTIN (T = 5 unless therwise nted) Drinurce ltge teurce ltge Drin T = 5 Pulsed Drinurce Dide Frwrd urrent Mximum Pwer = 5 b Prmeter ymbl Limit Unit (Preliminry versin) Operting Junctin nd trge Temperture Rnge D ID IDM I PD TJ TT D t 75 W THERML HRTERITI Therml Resistnce Junctintse Therml Resistnce Junctintmbient R J. R J 6 /W uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr pril (Rev.)
2 Electricl hrcteristics (T = 5 unless therwise nted) Prmeter ymbl nditin Min Typ Mx Drinurce Brekdwn ltge Zer te ltge Drin urrent tebdy Lekge te Threshld ltge Drinurce Ontte Resistnce Ontte Drin urrent Frwrd Trnscnductnce Input pcitnce Output pcitnce Reverse Trnsfer pcitnce TurnOn Dely Time Rise Time TurnOff Dely Time Fll Time Ttl te hrge teurce hrge BD ID I (th) RD(ON) = ID=5 D= = = (Preliminry versin) tedrin hrge ID(ON) gf I O R td(on) tr td(off) tf Qg Qgs Qgd D= D= ID=5 = ID= =5 ID= D= = D= ID=5 D=5 = f=.mhz DD= ID= = REN=6 D= ID= =5 Dide Frwrd ltge D = ID= c 5 5 Unit m n PF ns n Ntes. urfce Munted n FR Brd t < sec. b. Pulse Test Pulse Width < s Duty ycle < %. c. urnteed by design nt subject t prductin testing. uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr pril (Rev.)
3 ID ) ( Drin urrent (pf) pcitnce ltge th Nrmlized teurce Threshld D Drinturce ltge () Figure. Output hrcteristics rss ss = iss = 5 =.5 = 5 6 D Drinturce ltge () Figure. pcitnce D = ID = 5 teturce ltge () (Preliminry versin) Tj Junctin Temperture ( ) R Drin rrent ( ) D (ON) e ID u OnResistnc N rmlized ( ) B Nrmlize D rinurce Brekdwn ltg e D d Tj = Figure. Thnsfer hrcteristics = ID = Tj Junctin Tempertture ( ) Figure. OnResistnce ritin with Temperture ID = Tj Junctin Temperture ( ) O Figure 5. te Threshld ritin with Temperture Figure 6. Brekdwn ltge ritin with Temperture uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr pril (Rev.)
4 . F ) ( Trnscnductnce g ) urce ltge ( t te D = ID Drinurce urrent () Figure 7. Trnscnductnce ritin with Drin urrent 6 D = ID = 6 6 Qg Ttl te hrge (n) Figure 9. te hrge. 5 6 (Preliminry versin) I ) ( urrent urcedrin ID ) ( urrent Drin. TJ = 5 O D Bdy Dide Frwrd ltge () Figure. Bdy Dide Frwrd ltge ritin with urce urrent = ingle Pulse T = 5 RD(ON) Limit D ms ms µs µs D Drinturce ltge () Figure. Mximum fe Operting re uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr pril (Rev.)
5 Effectiv Impednce r e (t) Nrmlized Trnsient Therml REN IN Figure. witching Test ircuit.. 5 Duty ycle = ingle Pulse D DD tn td(n) RL OUT OUT IN % tff tr td(ff) INERTED 5% 5% PULE WIDTH Figure. witching Wvefrms Figure. Nrmlized Therml Trnsient Impednce urve (Preliminry versin) % qure Wve Pulse Durtin (sec) 9% PDM 9% 9% % t t. R J(t) = r(t)*r J. R J = see dtsheet. TJM T = PDM*R J(t). Duty ycle D = t/t tf uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr pril (Rev.) 5
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List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...
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List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...
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List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...
List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3 Rating and characteristic curves... 4~5 Pinning infrmatin... 6 Marking... Suggested
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List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...
List List... Package utline... Features... Mechanical data... Maximum ratings... Electrical characteristics... 3 Rating and characteristic curves... 4~ Pinning infrmatin... 6 Suggested slder pad layut...
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List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...
SMD Switching Dide V9WS THRU VWS rmsa MS List List... Package utline... eatures... Mechanical data... Maximum ratings... Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Suggested
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List... Package outline... Features Mechanical data... Maximum ratings and Electrical characteristics... Rating and characteristic curves...
List List... Package utline... 1 Features... Mechanical data... Maximum ratings and Electrical characteristics..... Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Suggested slder
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3V PChannel MOFET General escripion The combines advanced rench MOFET echnology wih a low resisance package o provide exremely low R (ON). This device is ideal for load swich and baery proecion applicaions.
List... Package outline... Features Mechanical data Maximum ratings... Rating and characteristic curves Pinning information...
List List... Package utline... 1 2 Features... 2 Mechanical data... 2 Maximum ratings... 2 Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Suggested slder pad layut... 4 4 Packing
Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration
DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
AON8 3 NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos L) technology ery Low RDS(on) at. GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...
List List... Package utline... 1 Features... Mechanical data... Maximum ratings... Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Suggested slder pad layut... 4 4 Packing infrmatin...
V DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The AO4449 uses advanced rench echnology o provide excellen R(ON), and ulralow low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
List... Package outline... Features Mechanical data... Maximum ratings... Switching time equivalent test circuits...
SMD NPN Transistr Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Switching time equivalent test circuits... Rating and characteristic curves... 2 2~3 4
List... Package outline... Features Mechanical data Maximum ratings... Electrical Characteristics... 3
SMD Switching Dide Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... 2 Maximum ratings... 2 Thermal haracteristics... 3 Electrical haracteristics... 3 Rating and characteristic
IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES
4th-ersion MITSUBISHI HIGBT MODULES CM1DC-4N CM1DC-4N IC... 1 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT Soft Reverse Recovery Diode PPLICTION Traction drives, High
V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60
AO6/AOI6 6V A α MO TM Power Transistor eneral escription The AO6 & AOI6 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Polar3 TM HiperFET TM Power MOFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Preliminary Technical Information IXFTNP3 IXFQNP3 V D I D2 R D(on) TO-268 (IXFT) = V = A 4mΩ ymbol
AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver
AOVS6 6V 8A αmos TM Power Transistor General Description The AOVS6 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and robustness
SGM7SZ32 Small Logic Two-Input OR Gate
Preliminary Datasheet GENERL DESCRIPTION The is a single two-input OR gate from SGMICRO's Small Logic series. The device is fabricated with advanced CMOS technology to achieve ultra-high speed with high
NTF5P03T3. P Channel SOT AMPERES, 30 VOLTS R DS(on) = 100 m
NTF5PT Preferred Device Power MOSFET 5. mps, Volts PChannel SOT Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT Surface Mount Package valanche
T95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM8DZB-N CM8DZB-N IC...8 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT TM Soft Reverse Recovery Diode PPLICTION Traction drives, High Reliability Converters / Inverters,
V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1
3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at.5v V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER. VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes VRRM VRMS VDC IFSM
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 t CURRENT Amperes RSM THRU RS7M FEATURES * Lw leakage * Lw frward vltage * Munting psitin : Any * Surge verlad rating: Amperes peak
Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG
3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)
YYWW VNE INFORMTION OMPLEMENTRY PIR ENHNEMENT MOE MOSFET PowerI Product Summary evice V (BR)SS R S(ON) Max Q 3V Q -3V escription mω @ V = V 7mΩ @ V = 4.V I Max T = + 8 mω @ V = -V - 38mΩ @ V = -4.V - This
List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...
List List... Pakage utline... 1 2 Features... 2 Mehanial data... Maximum ratings... Rating and harateristi urves... 2 2,3,4 5~9 Pinning infrmatin... 10 Marking... Suggested slder pad layut... 10 10 Paking
= 25 o C unless other wise noted Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage V. Gate-Source Voltage 8-8 V I D
November 998 FG63C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE
CMHC-R CMHC-R IC... CES... -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode ISiC Baseplate PPLICTION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRWING
WFF15N60 Product Description Silicon N-Channel MOSFET
Features 5A,600V, RDS(on)(Max52Ω)@VGS=0V Ultra-low Gate charge(typical 36nC) Fast Switching Capability 00%Avalanche Tested Maximum Junction Temperature Range(50 ) G D S General Description This Power MOSFET
Distributed by: www.jamec.cm 1-8-831-4242 The cntent and cpyrights f the attached material are the prperty f its wner. FEATURES * Current transfer rati ( CTR : MIN. 5% at IF = 5mA, VCE = 5V ) * High input-utput
I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View
Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description