SSD3030P. P-Channel Enhancement Mode MOSFET FEATURES. Product Summary TO-252. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
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1 PChnnel Enhncement Mde MOFET Prduct ummry TO () I () R(ON) (mω) = 3 3 = 5 =.5 FETURE uper high density cell design fr lw R(ON). Rugged nd relible. TO pckge. Pb free. BOLUTE MXIMUM RTIN (T = C unless therwise nted) Prmeter ymbl Limit Unit rinurce ltge 3 teurce ltge + rin TJ = C I 3 Pulsed b IM rinurce ide Frwrd Current I.7 Mximum Pwer issiptin P 5 W Operting Junctin nd trge Temperture Rnge TJ, TT 55 t 5 C THERML CHRCTERITIC Therml Resistnce, JunctintCse R JC 3 Therml Resistnce, Junctintmbient R J 5 C/W uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr, Jnury (Rev.)
2 PChnnel Electricl Chrcteristics (T = C unless therwise nted) c Prmeter ymbl Cnditin Min Typ Mx Unit rinurce Brekdwn ltge B =, I= 3 Zer te ltge rin Current I =, = tebdy Lekge I =, = n te Threshld ltge (th) = I=.9.5 rinurce Ontte Resistnce R(ON) =, I= = 5, I= 5 m =.5, I= 55 Ontte rin Current I(ON) =5, = Frwrd Trnscnductnce gf =5, I=5.3 5 Input Cpcitnce CI =5 Output Cpcitnce CO = PF Reverse Trnsfer Cpcitnce CR f=.mhz 5 TurnOn ely Time t(on) =5, 7. Rise Time TurnOff ely Time tr t(off) I=, EN=, 7. 9 ns Fll Time tf REN=, 95. Ttl te Chrge teurce Chrge terin Chrge Qg =5, I=, = =5, I=, =.5 Qgs Qgd = 5, 3.5 I=, = ide Frwrd ltge =, I=.75. nc Ntes. urfce Munted n FR Brd, t < sec. b. Pulse Test Pulse Width < 3 s, uty Cycle < %. c. urnteed by design, nt subject t prductin testing. uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr, Jnury (Rev.)
3 I, rin Current ( ) = =, 9,, 7,, 5 = 3 I, rin C u rrent ( ) 5 5 Tj = C C 55 C, rinturce ltge ()......, teturce ltge () Figure. Output Chrcteristics Figure. Trnsfer Chrcteristics (pf) Cpcitnce C, Ciss Css (ON) e OnResistnc N rmlized ( ) R, = I = Crss 5 5 3, rinturce ltge () Figure 3. Cpcitnce Tj, Junctin Tempertture ( C) Figure. OnResistnce ritin with Temperture O th, Nrmlized teurce Threshld ltge = I = Tj, Junctin Temperture ( C) B, Nrmlize rinurce Brekdwn ltg e d I = Tj, Junctin Temperture ( C) Figure 5. te Threshld ritin with Temperture Figure. Brekdwn ltge ritin with Temperture uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr, Jnury (Rev.) 3
4 F ) Trnscnductnce ( g, = I, rinurce Current () Figure 7. Trnscnductnce ritin with rin Current I, urcerin Current ( )... =......, Bdy ide Frwrd ltge () Figure. Bdy ide Frwrd ltge ritin with urce Current ) ( urce ltge te t, = 5 I = Qg, Ttl te Chrge (nc) I ) ( Current rin,.. R (ON) LIMIT = INLE PULE R θj = 9 C/W T = C ms s C µs ms ms....., rinturce ltge () Figure 9. te Chrge Figure. Mximum fe Operting re uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr, Jnury (Rev.)
5 tn tff REN IN RL OUT td(n) OUT % tr 9% td(ff) 9% % 9% tf IN % 5% 5% INERTE PULE WITH Figure. witching Test Circuit Figure. witching Wvefrms =.5 (t), Nrmlized Effectiv Trnsient Therml Impednce r e INLE PULE P(pk) R θj (t) = r(t) * R θj R θj = 9 C/W t t T J T = P * R θj (t) uty Cycle, = t / t.... qure Wve Pulse urtin (sec) Figure 3. Nrmlized Therml Trnsient Impednce Curve uth e emicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. uth e emicnductr, Jnury (Rev.) 5
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