ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green
|
|
|
- June Loreen Stokes
- 5 years ago
- Views:
Transcription
1 Features General Description On-Chip Hall Sensor with Two Different Sensitivity and Hysteresis Settings for ATS V to 2V Operating Voltage 4mA (avg.) Output Sink Current Built-in Protecting Diode Only for Chip Reverse Power Connecting -2C to 85C Operating Temperature Low Profile 4 Pin SIP Package Lead Free package: SIP-4L SIP-4L: Available in Green Molding Compound (No Br, Sb) Lead Free Finish/RoHS Compliant (Note 1) ATS276 are integrated Hall sensors with output drivers, mainly designed for electronic commutation of brush-less DC Fan. This IC internally includes the regulator, protecting diode, Hall plate, amplifier, comparator, and a pair of complementary open-collector outputs (DO, DOB). While the magnetic flux density (B) is larger than operate point (Bop), DO will turn on (low), and meanwhile DOB will turn off (high). Each output is latched until B is lower than release point (Brp), and then DODOB transfer each state. For DC fan application, sometimes need to test power reverse connection condition. Internal diode only protects chip-side but not for coil-side. If necessary, add one external diode to block the reverse current from coil-side. Applications Dual-Coil Brush-Less DC Motor Dual-Coil Brush-Less DC Fan Revolution Counting Speed Measurement Ordering Information ATS276 X - P X - B - X Version G or H Package P : SIP-4L Lead Free L : Lead Free G : Green Packing B : Bulk Magnetic Characteristics A or B or C (Note 3) Device Package Code Packaging (Note 2) Quantity Bulk Part Number Suffix Magnetic Characteristics ATS276G-PL-B-A P SIP-4L 1 -B A S276G-PL-B-B P SIP-4L 1 -B B ATS276G-PL-B-C P SIP-4L 1 -B C ATS276H-PL-B-A P SIP-4L 1 -B A ATS276H-PL-B-B P SIP-4L 1 -B B ATS276H-PG-B-A P SIP-4L 1 -B A TS276H-PG-B-B P SIP-4L 1 -B B Notes: 1. EU Directive 22/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 22/95/EC Annex Notes. 2. Pad layout as shown on Diodes Inc. suggested pad layout document AP21, which can be found on our website at 3. Please refer to page 5 (Magnetic Characteristics table). ATS276 Rev. 1 1 of 9 DECEMBER 28 Diodes Incorporated
2 Pin Assignments ( Top View ) SIP-4L Pin Descriptions Name P/I/O Pin # Description V cc P 1 Power Supply Input DO O 2 Output Pin DOB O 3 Output Pin GND P 4 Ground Block Diagram 1 REG. V CC DO 2 Hall Plate Amp DOB 3 GND 4 ATS276 Rev. 1 2 of 9 DECEMBER 28 Diodes Incorporated
3 Typical Application Circuit 276 Coil 1 Coil V cc R1 = R2 = 47O C1 = C2 = 2.2 uf The R, C value need to be fine tuned based on coils design. Brush-Less DC Fan Absolute Maximum Ratings (T A = 25C) R1 C1 R2 C2 Symbol Characteristics Values Unit V CC Supply Voltage 2 V V RCC Reverse V CC Polarity Voltage -2 V B Magnetic Flux Density Unlimited Continuous.4 Ic Output on Current Hold.5 A Peak (Start Up).7 T S Storage Temperature Range -65~+15 C P D Package Power Dissipation 55 mw T J Maximum Junction Temperature 15 C Recommended Operating Conditions Notes: Symbol Characteristic Conditions Min Max Unit V CC Supply Voltage (Note 4) Operating V T A Operating Ambient Temperature (Note 5) Operating C 4. The output DO/DOB is switching as magnetic field change (S>3G, N<-3G). 5. Shall not exceed P D and Safety Operation Area. ATS276 Rev. 1 3 of 9 DECEMBER 28 Diodes Incorporated
4 Electrical Characteristics (T A = +25C, Vcc = 4.V to 2V) Symbol Characteristic Conditions Min Typ. Max Units V ce Low Supply Voltage V cc = 3.5V, I L = 1mA.4 V Vz Output Zener Breakdown (Note 6) 46 V V ce(sat) Output Saturation Voltage V cc = 14V, I L = 3mA.3.6 V I cex Output Leakage Current V ce = 14V, V cc = 14V <.1 1 μa I cc Supply Current V cc = 2V, Output Open ma tr Output Rise Time V cc = 14V, R L = 82, C L = 2pF 3. 1 μs tf Output Falling Time V cc = 14V, R L = 82, C L = 2pF μs t Switch Time Differential V cc = 14V, R L = 82, C L = 2pF 3. 1 μs Notes: 6. The Vz may vary with the inductance/resistance of DC Fan. In order to reduce the risk of dynamic operation, the capacitor/ resistor is recommended to add below the DO/DOB as Application Circuit (see General Description on page 1). Test Circuit 14V 276 RL 1 DO RL 2 CL 1 CL2 DOB RL1 = RL2 = 82 Ohm CL 1 = CL2 = 2 pf ATS276 Rev. 1 4 of 9 DECEMBER 28 Diodes Incorporated
5 Magnetic Characteristics (T A = +25C, Vcc = 14V) ( 1mT = 1 Gauss ) A grade Symbol Characteristic Min Typ. Max Unit Bop Operation Point 1-5 Gauss Brp Release Point Gauss Bhy Hysteresis Gauss B grade Symbol Characteristic Min Typ. Max Unit Bop Operation Point 5-7 Gauss Brp Release Point Gauss Bhy Hysteresis Gauss C grade Symbol Characteristic Min Typ. Max Unit Bop Operation Point Gauss Brp Release Point Gauss Bhy Hysteresis Gauss DO DOB ( Output Voltage ) Vcc Turn off ( off-state ) Bhy Turn on ( Output Voltage ) Turn on ( off-state ) Vcc Bhy Turn off Brp ( on-state ) VSAT Bop ( Magnetic Flux Density B ) ( on-state ) VSAT Brp Bop ( Magnetic Flux Density B ) ATS276 Rev. 1 5 of 9 DECEMBER 28 Diodes Incorporated
6 Operating Characteristics DO S N ( SIP-4L ) Marking side ( Output Voltage ) N Vsat High Vcc Bhy Vd Low Brp Bop S ( Magnetic Flux Density ) ATS276 Rev. 1 6 of 9 DECEMBER 28 Diodes Incorporated
7 Performance Characteristics T A (C) P D (mw) T A (C) P D (mw) P D (mw) 1 Power Dissipation Curve T A ( C) Typical Magnetic Switch Point vs. Supply Voltage Flux Density (G) Supply Voltage (V) Bhys Bop Brp T yp ic a l S u p p ly C u rre n t v s. S u p p ly V o lta g e TA = 8 o C TA = 25 o C Supply Current (ma) TA = -2 o C Supply Voltage (V) ATS276 Rev. 1 7 of 9 DECEMBER 28 Diodes Incorporated
8 Marking Information Part Number ( Top View ) 276X Y WW X X : Version : G or H Y : Year : ~9 WW : Week : 1~52, "52" represents 52 and 53 week X : Internal Code : A~Z : Green a~z : Lead Free SIP-4L Package Information (All Dimensions in mm) Active Area Depth Marking side Package Sensor Location mm 1..1mm.7mm Package Dimension ATS276 Rev. 1 8 of 9 DECEMBER 28 Diodes Incorporated
9 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. ATS276 Rev. 1 9 of 9 DECEMBER 28 Diodes Incorporated
ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X
Features General Description 3.5V to 20V DC operation voltage Temperature compensation Wide operating voltage range Open-Collector pre-driver 25mA maximum sinking output current Reverse polarity protection
Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc
E-MAIL: Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 2V operating voltage - 4mA (avg) output sink current - Build-in protecting diode only for chip
General Description DTS27X X -X X X -X. Lead. 27X coil1. R1 = R2 = 470Ω C1 = C2 = 2.2 μ F The R, C value need to be fine tuned base on coils design.
Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 18V operating voltage - 35mA (avg) output sink current - Built-in protecting diode only for chip reverse
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH277 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUT HALL EFFECT LATCH DESCRIPTION The UTC H654 is integrated Hall sensors with complementary output drivers designed for electronic commutation of brushless
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH276 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal
HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications
General Description The is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing,
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed to operate
AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )
UNIVERSAL DC/DC CONVERTER Description Pin Assignments The Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal
SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary
SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose
PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH
HB HB HB3 PACKAGE DIMENSIONS 0.7 (.0) 0.57 (.6) C L 0.9 (6.35) 0.3 (6.5) D E C L 0.39 (.00) 0.3 (0.85).33 (3.38).073 (.85) 0.9 (3.3) 0.9 (3.0) 0.33 (.0) 0. (0.7) Optical C L 0.5 (3.) 0.9 (3.0).35 (8.00).95
-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
MT3451 Series BiCMOS, Latch, Hall-Effect Magnetic Position Sensors
Features and Benefits BiCMOS Technology Magnetic Type: Latch Wide Operating Voltage Range: Supply Voltage 2.8~24V Specified Operating Temperature Range: From -40 ~ 150 High Magnetic Sensitivity B OP =20Gauss,
B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section
4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and
Discontinued Product
Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: November 1, 21 Recommended
LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View
DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface
H21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH
HA / HA / HA.07 (.85). (.8) NOTES: 0.9 (6.5) 0. (6.5) 0.5 (.) 0.9 (.0) PACKAGE DIMENSIONS.95 (7.5).7 (6.9) 0.97 (.7) 0.957 (.) 0.7 (.0) 0.57 (.6) D E 0.755 (9.) 0.75 (8.9) 0.9 (.) 0.9 (.0) Ø 0. (.) Ø 0.6
74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6
DUAL BUFFERS Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The is composed of two buffers with standard
PHOTOTRANSISTOR OPTOCOUPLERS
MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The CNX48U, HBX, and TIL3 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U HB HB2 HB255 HB3 TIL3 FEATURES High sensitivity to low input
AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS
HAA HAA3 HAA2 HAA4 DESCRIPTION The HAAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES Bi-polar
Optical (2.8) (2.3) PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER
PACKAGE DIMENSIONS 0.97 (.7) 0.957 (.3) 0.7 (.0) 0.57 (.6) Ø 0.33 (3.) Ø 0.6 (3.) (X) 0.9 (6.35) 0.3 (6.5) D E 0.755 (9.) 0.75 (8.9) 0.39 (.00) 0.3 (0.85) 0.9 (3.3) 0.9 (3.0) 0.03 (.60) NOM 0.33 (.0) 0.
MOC8111 MOC8112 MOC8113
PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers
APS12205, APS12215, and APS12235 High-Temperature Hall-Effect Latches for Low Voltage Applications
FEATURES AND BENEFITS Optimized for applications with regulated power rails Operation from to. V AEC-Q100 automotive qualified Operation up to 17 C junction temperature Dynamic offset cancellation Resistant
2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information
YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS.16 (3.).11 (.8).43 (1.1).3 (.9) FRONT. (.).87 (.).71 (1.8).39 (1.).87 (.).71 (1.8) TOP.3 (.9) R.17 (.4) COLLECTOR MARK 1 NOTE:.16 (.4) BACK 1. Emitter. Collector 3. Tolerance of ±.1
AZ1117C. Description. Features. Applications. Pin Assignments. A Product Line of. Diodes Incorporated LOW DROPOUT LINEAR REGULATOR AZ1117C
LOW DROPOUT LINEAR REGULATOR Description Features The is a low dropout three-terminal regulator. The has been optimized for low voltage where transient response and minimum input voltage are critical.
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
A1244 Chopper-Stabilized, Two Wire Hall-Effect Latch
Features and Benefits High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
Chopper-Stabilized, Two Wire Hall-Effect Switches
FEATURES AND BENEFITS High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
Characteristic Symbol Value Unit Output Current I out 150 ma
LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like
DM74LS138 DM74LS139 Decoder/Demultiplexer
DM74LS138 DM74LS139 Decoder/Demultiplexer General Description These Schottky-clamped circuits are designed to be used in high-performance memory-decoding or data-routing applications, requiring very short
S-57K1 A Series FOR AUTOMOTIVE 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.
www.ablic.com FOR AUTOMOTIVE 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2013-2019 This IC, developed by CMOS technology, is a high-accuracy Hall effect latch
Hallogic Hall-Effect Sensors OH090U, OH180U, OH360U OHN3000 series, OHS3000 series OHN3100 series, OHS3100 series
Hallogic HallEffect Sensors OH9U, OH18U, OH36U OHN3 series, OHS3 series OHN3 series, OHS3 series Features: Designed for noncontact switching operations Operates over broad range of supply voltages (4.5
HAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS
MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, 1997 1--1DS MICRONAS HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
High Reliability Hallogic Hall- Effect Sensors OMH090, OMH3019, OMH3020, OMH3040, OMH3075, OMH3131 (B, S versions)
High Reliability Hallogic Hall Features: Designed for noncontact switching operations Operates over a broad range of supply voltages Excellent temperature stability operates in harsh environments Suitable
MT4106 Series Uni-polar, Hall-Effect
Uni-polar, Hall-Effect Magnetic Position ensors Features and Benefits Bipolar Technology Magnetic Type: Uni-polar Wide Operating Voltage Range: upply Voltage 3.8~30V pecified Operating Temperature Range:
Hallogic Hall-effect Sensors OH090U, OH180U, OH360U OHN3000 Series, OHS3000 Series OHN3100 Series, OHS3100 Series
Hallogic Halleffect Sensors Features: Designed for noncontact switching operations Operates over broad range of supply voltages (4.5 V to 24 V) Operates with excellent temperature stability in harsh environments
APS13290 and APS13291 Precision Hall-Effect Latches for Consumer and Industrial Applications
APS329 and FEATURES AND BENEFITS Symmetrical latch switchpoints Superior ruggedness and fault tolerance Reverse-polarity and transient protection Operation from 4 C to 7 C junction temperature Output short-circuit
4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE
Order this document by N/D GlobalOptoisolator The N, N, N7 and N8 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most
A1245. Chopper-Stabilized, Two Wire Hall-Effect Latch PACKAGES
FEATURES AND BENEFITS High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter
MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter General Description The MM74C00, MM74C02, and MM74C04 logic gates employ complementary MOS (CMOS) to achieve wide power
430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View
DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and
istributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance
SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for
High-Temperature Precision Hall-Effect Switch
- FEATURES AND BENEFITS Unipolar switchpoints ASIL A functional safety compliance Automotive-grade ruggedness and fault tolerance Extended AEC-Q qualification Reverse-battery and 4 V load dump protection
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
Precision Hall-Effect Switch for Consumer and Industrial Applications
FEATURES AND BENEFITS Unipolar switchpoints Superior ruggedness and fault tolerance Reverse-polarity and transient protection Operation from 40 C to 175 C junction temperature Output short-circuit and
MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter
MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter General Description The MM74C00, MM74C02, and MM74C04 logic gates employ complementary MOS (CMOS) to achieve wide power
Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units
BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair
Chopper-Stabilized Precision Hall-Effect Latches
Features and Benefits AEC-Q1 automotive qualified Symmetrical latch switchpoints Resistant to physical stress Superior temperature stability Output short-circuit protection Operation from unregulated supply
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline
E 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2
OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features NEW PRODUT omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 297A Type (PNP) Ideal for Low Power Amplification
Hall-Effect Latch / Bipolar Switch
2 - FEATURES AND BENEFITS AEC-Q1 automotive qualified Quality managed (QM), ISO 26262 compliant High-speed, 4-phase chopper stabilization Low operating voltage down to 3 V High sensitivity Stable switchpoints
I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
Silicon Diffused Darlington Power Transistor
GENERAL DESCRIPTION Highvoltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE
TA7262P,TA7262P(LB),TA7262F
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control
Detection of S pole Detection of N pole Active "L" Active "H" Nch open-drain output Nch driver built-in pull-up resistor. f C = 250 khz typ.
www.ablic.com www.ablicinc.com S-5732 B Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC ABLIC Inc., 2016-2017 Rev.2.1_02 This IC, developed by CMOS
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel
Automotive-grade 390 V internally clamped IGBT E SCIS 180 mj Features Datasheet - production data TAB DPAK 1 3 AEC-Q101 qualified 180 mj of avalanche energy @ T C = 150 C, L = 3 mh ESD gate-emitter protection
-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BT52C2V - BT52C39 SURFACE MOUNT ENER DIODE Features Planar Die Construction
S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications. Package.
www.ablicinc.com S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2017 Rev.1.1_02 This IC, developed by CMOS technology, is a high-accuracy
5-V Low Drop Fixed Voltage Regulator TLE
5-V Low Drop Fixed Voltage Regulator TLE 427-2 Features Output voltage tolerance ±2% 65 ma output current capability Low-drop voltage Reset functionality Adjustable reset time Suitable for use in automotive
MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
5-V Low Drop Fixed Voltage Regulator TLE 4275
5-V Low Drop Fixed Voltage Regulator TLE 4275 Features Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V Q = 1 V Very low-drop voltage Short-circuit-proof
S-5841 Series TEMPERATURE SWITCH IC (THERMOSTAT IC) Features. Applications. Packages. Seiko Instruments Inc. 1.
S-5841 Series www.sii-ic.com Seiko Instruments Inc., 2007-2012 Rev.2.1_00 The S-5841 Series is a temperature switch IC (thermostat IC) which detects the temperature with a temperature accuracy of ±2.5
DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
SFH612A/ SFH655A. Pb Pb-free. Optocoupler, Photodarlington Output. Vishay Semiconductors
Optocoupler, Photodarlington Output Features High Isolation Test Voltage 5300 V RMS Standard Plastic DIP-4 Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
MOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
350mW, SMD Switching Diode
350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free
CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection Features Breakdown Voltage, 500 V RMS No Base Terminal Connection for Improved Common Mode Interface Immunity Long Term Stability Industry Standard
S-57M1 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Package. ABLIC Inc., Rev.1.
www.ablic.com www.ablicinc.com HIGH-SPEED BIPOLAR HALL EFFECT LATCH ABLIC Inc., 2011-2013 Rev.1.2_02 The, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity,
1-A Dual-HBD (Dual-Half-Bridge Driver) TLE4207G
-A Dual-HBD (Dual-Half-Bridge Driver) Features Delivers up to.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode Low saturation voltage;
DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj
STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj Features TAB D 2 PAK 2 1 3 TAB 2 1 DPAK 3 AEC-Q101 qualified SCIS energy of 320 mj @ T J = 25 C Parts
MCC. THRU MC7912CT MC7905CT TO-220. Features. Three-Terminal Negative Voltage Regulators
Features Input Voltage V I -35 V Operating Temperature Range TOPR 0---125 Storage Temperature Range T STG -55---150 Output Voltage Load Regulation Line regulation Quiescent Current Quiescent Current Output
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
74F153 Dual 4-Input Multiplexer
74F153 Dual 4-Input Multiplexer General Description The F153 is a high-speed dual 4-input multiplexer with common select inputs and individual enable inputs for each section. It can select two lines of
SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07
Fast IGBT in NPT-technology Lower E off compared to previous generation Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter
V N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
MM74C14 Hex Schmitt Trigger
MM74C14 Hex Schmitt Trigger General Description The MM74C14 Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement transistors. The
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation Short circuit withstand time 10 µs Designed for operation above 30 khz G C E NPT-Technology for 600V applications offers:
FPF1007-FPF1009 IntelliMAX Advanced Load Products
FPF07-FPF09 IntelliMAX Advanced Load Products Features 1.2 to 5.5 V Input Voltage Range Typical R ON = 30 mω at = 5.5 V Typical R ON = 40 mω at = 3.3 V Fixed Three Different Turn-on Rise Time µs / 80 µs
ABLIC Inc., Rev.2.2_02
S-5841 Series www.ablicinc.com TEMPERATURE SWITCH IC (THERMOSTAT IC) ABLIC Inc., 2007-2015 Rev.2.2_02 The S-5841 Series is a temperature switch IC (thermostat IC) which detects the temperature with a temperature
This chip is used for: power module BSM 75GD120DN2. Emitter pad size 8 x ( 2.99 x 1.97 ) Thickness 200 µm. Wafer size 150 mm
IGBT Chip in NPT-technology Features: 1200V NPT technology low turn-off losses short tail current positive temperature coefficient easy paralleling integrated gate resistor This chip is used for: power