UNISONIC TECHNOLOGIES CO., LTD
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1 UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed to operate in the alternating magnetic field especially at low supply voltage and operation over extended temperature ranges to +125 С. This Hall IC is suitable for application to various kinds of sensors, contact-less switches, such as Speed sensor, Position sensor, Rotation sensor, Contact-less sensor, and Motor control. FEATURES SOT-23 (EIAJ SC-59) * Wide Supply Voltage Range of 2.5V to 20V * Wide Temperature Operation Range of -30 С ~+125 С * Alternating Magnetic Field Operation * Built-in Protection Diode * TTL and MOS IC are Directly Drivable by the Output * The life is Semi Permanent because it Employs Contact-Less Parts * SIP-3 and SOT-23 Package are Available. ORDERING INFORMATION Note: Pin Assignment: I: V CC Ordering Number Package Pin Assignment Packing SK1816G-AE3-R SOT-23 O I G Tape Reel SK1816G-G03-B SIP-3 I G O Tape Box SK1816G-G03-K SIP-3 I G O Bulk O:V OUT G:GND MARKING SIP-3 SOT G 1 of 8 Copyright 2015 Unisonic Technologies Co., Ltd
2 BLOCK DIAGRAM UNISONIC TECHNOLOGIES CO., LTD 2 of 8
3 ABSOLUTE MAXIMUM RATINGS (T A =25 С) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V CC 2.5~20 V Supply Current I CC 10 ma Circuit Current I O 20 ma Power Dissipation SIP mw P D SOT mw Operating Temperature T OPR -30 ~ +125 С Storage Temperature T STG -40 ~ +150 С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A =25 С, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Low-Level Output Voltage V OL V CC = 16V, I OUT =12mA, B=30 mt V V CC =3.6V, I OUT =12mA, B=30 mt V Output Leakage Current I LEAK V CC =16V, B=-30 mt 1 10 μa Supply Current I CC V CC =16V 6 10 ma V CC =3.6V ma Output Switching Time T R V CC =16V, R L =10KΩ, C L =10pF 5 μs T F V CC =16V, R L =10KΩ, C L =10pF 1 μs MAGNETIC CHARACTERISTICS Operate Point B OP At T A =25 С 5 mt Release Point B RP At T A =25 С -5 mt Hysteresis B HYS At T A =25 С mt Note: 1. BOP=operate point (output turns ON); BRP =release point (output turns OFF); BHYS =hysteresis(bop BRP). As used here, negative flux densities are defined as less than zero (algebraic convention). Typical values are at T A =25 С and VCC =12V. 2. 1mT=10 gauss UNISONIC TECHNOLOGIES CO., LTD 3 of 8
4 PACKAGE INFORMATION Fig. 1 SENSOR LOCATIONS S Marked face N Marked face V CC 2. GND 3. Output Output 2. V CC 3. GND N SIP-3 S SOT-23 H V OUT B H L B RP B OP 0 Magnetic flux density Fig. 2 APPLYING DIRECTION OF MAGNETIC FLUX UNISONIC TECHNOLOGIES CO., LTD 4 of 8
5 TYPICAL APPLICATION CIRCUIT FOR DC FAN 1 Coil 2 Coil 1 FOR DC FAN 2 TEST CIRCUIT VIN SK KΩ 10P DO UNISONIC TECHNOLOGIES CO., LTD 5 of 8
6 TYPICAL CHARACTERISTICS Current (ma) Current (ma) Magnetic Field (G) Magnetic Field (G) 30.5 Temperature vs Sink 29.0 Voltage vs Sink Sink Sink Sink (ma) Sink (ma) Temperature ( С) Voltage (V) UNISONIC TECHNOLOGIES CO., LTD 6 of 8
7 TYPICAL CHARACTERISTICS(Cont.) Switch Point IN Gaues Hysteresis IN Gaues Output Sink Current Supply Current Sink Current (ma) Supply Current (ma) Ambient Temperature ( С) Ambient Temperature ( С) UNISONIC TECHNOLOGIES CO., LTD 7 of 8
8 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 8 of 8
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed to operate
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH276 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH277 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUT HALL EFFECT LATCH DESCRIPTION The UTC H654 is integrated Hall sensors with complementary output drivers designed for electronic commutation of brushless
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UNISONIC TECHNOLOGIES CO., LTD BILATERAL SWITCH DESCRIPTION The UTC U74HC1G66 is a high-speed Si-gate CMOS device that provides an analog switch. The switch has two input/output pins(y and Z) and an active
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BUS BUFFER/LINE DRIVER 3-STATE DESCRIPTION The U74LVC1G125 is a single bus buffer/line driver with 3-state output. When the output enable ( ΟΕ ) is high the output will be
UNISONIC TECHNOLOGIES CO., LTD
U74LC1G04 UNISONIC TECHNOLOGIES CO., LTD SINGLE INERTER GATE DESCRIPTION The UTC U74LC1G04 is a single inverter gate, it provides the function Y = A. This device has power-down protective circuit, preventing
UNISONIC TECHNOLOGIES CO., LTD U74LVC1G125
UNISONIC TECHNOLOGIES CO., LTD U74LVC1G125 BUS BUFFER/LINE DRIVER 3-STATE DESCRIPTION The U74LVC1G125 is a single bus buffer/line driver with 3-state output. When the output enable ( ΟΕ ) is high the output
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS DESCRIPTION The U74LVC125A consists of four bus buffers with 3-state output controlled by enable input ( ΟΕ ), when ΟΕ is high,
UNISONIC TECHNOLOGIES CO., LTD U2429
UNISONIC TECHNOLOGIES CO., LTD U2429 SERIAL DATA CONTROL DUAL ELECTRONIC VOLUME DESCRIPTION The UTC U2429 is a dual channel electronic volume controlled with 2-wire serial data. The built-in reference
UNISONIC TECHNOLOGIES CO., LTD UR133/A
UNISONIC TECHNOLOGIES CO., LTD 300/500mA LOW DROPOUT LINEAR VOLTAGE REGULATORS 3 1 2 1 DESCRIPTION SOT-23 (EIAJ SC-59) SOT-223 The UTC are 300/500mA fixed output voltage low dropout linear regulators.
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT DESCRIPTION The U74AUC1G126 is single bus buffer gate with 3-state output. The output is disabled When the output enable (OE) is
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS DESCRIPTION The U74LVC125A consists of four bus buffers with 3-state output controlled by enable input ( ΟΕ ), when ΟΕ is high,
UNISONIC TECHNOLOGIES CO., LTD U74HC14
UNISONIC TECHNOLOGIES CO., LTD U74HC14 HIGH-SPEED CMOS LOGIC HEX INVERTING SCHMITT TRIGGER DESCRIPTION The UTC U74HC14 each contain six inverting Schmitt triggers in one package. Each of them perform the
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS DESCRIPTION The UTC is a low dropout, 3-terminal positive voltage regulator designed to provide output current up
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 1A LOW-DROPOUT POSITIE OLTAGE REGULATOR 1 DESCRIPTION The UTC is a low dropout regulator designed to provide output current up to 1A with a typically 5m dropout oltage and
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 3-TERMINALS 1A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC 78DXXA family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that
UNISONIC TECHNOLOGIES CO., LTD U74HC164
UNISONIC TECHNOLOGIES CO., LTD 8-BIT SERIAL-IN AND PARALLEL-OUT SHIFT REGISTER DIP-14 DESCRIPTION The is an 8-bit edge-triggered shift registers with serial input and parallel output. A LOW-to-HIGH transition
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP POSITIE OLTAGE REGULATORS DESCRIPTION The UTC LR1118 is a low drop voltage regulator able to provide up to 1A of output current, available also for adjustable version
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS DESCRIPTION The UTC is a low dropout, 3-terminal positive voltage regulator designed to provide output current up
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS DESCRIPTION The U74LVC2G125L consists of two bus buffers with 3-state output controlled by enable input (noe), when noe is high,
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS DESCRIPTION The UTC is a low dropout, 3-terminal positive voltage regulator designed to provide output current up
UNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC
UNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC 16-BIT CONSTANT CURRENT LED SINK DRIVER DESCRIPTION The UTC L16B45 is designed for LED displays. UTC L16B45 contains a serial buffer and data latches
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD SINGLE 2-LINE TO 1-LINE DATA SELECTOR OR MULTIPLEXER DESCRIPTION The U74LC2G157 is a single 2-line to 1-line data selector or multiplexer which is featured a common strobe
UNISONIC TECHNOLOGIES CO., LTD UR6225
UNISONIC TECHNOLOGIES CO., LTD UR6225 POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC UR6225 is a positive voltage output, three-pin regulator that provides a high current even when the input/output voltage
UNISONIC TECHNOLOGIES CO., LTD U74AHC1G66
UNISIC TECHNOLOGIES CO., LTD BILATERAL SWITCH DESCRIPTI The UTC is an analog switch which transmits signals from pin(y or Z) to pin (Z or Y) with an active HIGH enable input pin (E). When pin E is LOW,
UNISONIC TECHNOLOGIES CO., LTD R070LD10
UNISONIC TECHNOLOGIES CO., LTD VOLTGE REGULTOR DESCRIPTION s the UTC linear integrated LDO, the UTC shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features
UNISONIC TECHNOLOGIES CO., LTD LM78XX
UNISONIC TECHNOLOGIES CO., LTD LM78XX 3-TERMINAL 1A POSITIVE VOLTAGE REGULATOR 1 TO-220 DESCRIPTION The UTC LM78XX family is monolithic fixed voltage regulator integrated circuit. They are suitable for
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UNISONIC TECHNOLOGIES CO., LTD OCTAL BUFFER AND LINE DRIVER WITH 3-STATE OUTPUT DESCRIPTION DIP-20 The are octal buffer and line drivers with non-inverting 3-state outputs. When n OE is High, the outputs
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 3-TERMINAL 1A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC LM78XX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that
ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green
Features General Description On-Chip Hall Sensor with Two Different Sensitivity and Hysteresis Settings for ATS276 3.5V to 2V Operating Voltage 4mA (avg.) Output Sink Current Built-in Protecting Diode
UNISONIC TECHNOLOGIES CO., LTD
U74ACT157 UNISONIC TECNOOGIES CO., TD QUADRUPE 2-INE TO 1-INE DATA SEECTOR/ MUTIPEER DESCRIPTION The U74ACT157 is a quadruple 2-line to 1-line data selector/multiplexer. When G is high, all outputs are
HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications
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Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc
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UNISONIC TECHNOLOGIES CO., LTD TDA7269
UNISONIC TECHNOLOGIES CO., LTD TDA7269 14W+14W STEREO AMPLIFIER WITH MUTE & STAND-BY DESCRIPTION The UTC TDA7269 is a stereo 14+14W class AB Dual Audio Power amplifier with mute and ST-BY control. This
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UNISONIC TECHNOLOGIES CO., LTD
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General Description DTS27X X -X X X -X. Lead. 27X coil1. R1 = R2 = 470Ω C1 = C2 = 2.2 μ F The R, C value need to be fine tuned base on coils design.
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UNISONIC TECHNOLOGIES CO., LT L16B40 Preliminary CMOS IC 16-BIT CONSTANT CURRENT LE RIER WITH BUILT-IN TO ELIMINATE THE GHOSTING ESCRIPTION SSOP-24 UTC L16B40 is a new 16-bit cstant current LE driver IC
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DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
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DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
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DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
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NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
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PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
S-1000 Series ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR. Features. Applications. Packages. Seiko Instruments Inc. 1.
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DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS
74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting
Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL). The is specified in compliance
DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
INTEGRATED CIRCUITS. 74LV00 Quad 2-input NAND gate. Product specification Supersedes data of 1998 Apr 13 IC24 Data Handbook.
INTEGRATED CIRCUITS Supersedes data of 1998 Apr 13 IC24 Data Handbook 1998 Apr 20 FEATURES Wide operating voltage: 1.0 to 5.5 V Optimized for low voltage applications: 1.0 to 3.6 V Accepts TTL input levels
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DISCRETE SEMICONDUCTORS DATA SHEET M3D07 Supersedes data of 996 Mar 9 200 Sep 05 FEATURES Low forward voltage Guard ring protected Small plastic SMD package. APPLICATIONS Ultra high-speed switching Voltage
DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
DATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jun 23 22 Feb 19 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon. APPLICATIONS
Detection of both poles, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output
S-5716 Series www.ablicinc.com LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC ABLIC Inc., 2011-2015 Rev.1.6_02 The S-5716 Series, developed by CMOS technology, is a high-accuracy
INTEGRATED CIRCUITS. 74LV688 8-bit magnitude comparator. Product specification Supersedes data of 1997 May 15 IC24 Data Handbook.
INTEGRATED CIRCUITS Supersedes data of 1997 May 15 IC24 Data Handbook 1998 Jun 23 FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for low voltage applications: 1.0V to 3.6V Accepts TTL input levels
IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor
M3D3 Rev. 4 August Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT48 (D-PAK).. Features Fast switching
DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at
N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)
M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low
DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
8-bit binary counter with output register; 3-state
Rev. 01 30 March 2005 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with Low power Schottky TTL (LSTTL). It
V DET1(S) to V DET3(S) = 10.5 V to 21.5 V (0.1 V step)
S-8229 Series www.sii-ic.com Seiko Instruments Inc., 2012 Rev.1.0_00 The S-8229 Series is a battery monitoring IC developed using CMOS technology. Compared with conventional CMOS voltage detectors, the
PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology
PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.
SMD version of BUK125-50L
DESCRIPTION QUICK REFERENCE DATA Monolithic logic level protected SYMBOL PARAMETER MAX. UNIT power MOSFET using TOPFET2 technology assembled in a 5 pin surface mounting plastic package. V DS I D Continuous
Hex inverting Schmitt trigger with 5 V tolerant input
Rev. 04 15 February 2005 Product data sheet 1. General description 2. Features 3. pplications The is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible
PHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET
Rev. 4 4 September 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP55N3LTA in a SOT78 (TO-22AB)
PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET
M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
N-channel TrenchMOS logic level FET
M3D315 Rev. 3 23 January 24 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features Low on-state resistance Fast switching
PSMN004-60P/60B. PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D 2 -PAK).
Rev. 1 26 April 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN4-6P in SOT78 (TO-22AB) PSMN4-6B
PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR3-35PT 4PT 45PT
MT3451 Series BiCMOS, Latch, Hall-Effect Magnetic Position Sensors
Features and Benefits BiCMOS Technology Magnetic Type: Latch Wide Operating Voltage Range: Supply Voltage 2.8~24V Specified Operating Temperature Range: From -40 ~ 150 High Magnetic Sensitivity B OP =20Gauss,
µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.
M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in
TrenchMOS ultra low level FET
M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.
Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
P-channel enhancement mode MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION
PSMN002-25P; PSMN002-25B
PSMN2-25P; PSMN2-25B Rev. 1 22 October 21 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PSMN2-25P