HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications

Transcription

1 General Description The is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection and two complementary open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits and allows a wide operating supply voltage ranges. Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold B OP, the pin DO will be turned low (on) and pin DOB will be turned high (off). This output state is held until the magnetic flux density reverses and falls below B RP, then causes DO to be turned high (off) and DOB turned low (on). Features On-Chip Hall Sensor V to 3V Supply Voltage 5mA (avg) Output Sink Current Build in Protection Diode for Reverse Power Connecting -2 o C to 85 o C Operating Temperature Low Profile TO-9 (SIP-L) Package Build in Over Temperature Protection Function ESD Rating: 3V(Machine Model) Applications 12V/2V Dual-Coil Brushless DC Motor/Fan Power Supply and Switchboard Communications Facilities Industrial Equipment is available in TO-9 (SIP-L) package. TO-9 Figure 1. Package Type of 1

2 Pin Configuration Z Package (TO-9) GND DOB DO Figure 2. Pin Configuration of (Front View) Pin Description Pin Number Pin Name Function 1 Supply voltage 2 DO Output 1 3 DOB Output 2 GND Ground 2

3 Functional Block Diagram 1 2 DO Regulator Over-Temperature Protection GND Hall Sensor Amplifier Schmitt Trigger Output Driver 3 DOB Figure 3. Functional Block Diagram of Ordering Information - Circuit Type Package Z: TO-9 (SIP-L) E1: Lead Free G1: Green Magnetic Characteristics A: 1 to 7Gauss B: 1Gauss Package TO-9 Temperature Range -2 to 85 o C Part Number Marking ID Packing Type Lead Free Green Lead Free Green Z-AE1 Z-AG1 Z-E1 Z-G1 Bulk Z-BE1 Z-BG1 Z-E1 Z-G1 Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green package. 3

4 Absolute Maximum Ratings (Note 1) ( =25 o C) Parameter Symbol Value Unit Supply Voltage 3 V Reverse Protection Voltage V RCC -3 V Magnetic Flux Density B Unlimited Gauss Output Current Continuous 5 (Note 2) ma Hold I O 6 ma Peak (start up) 8 ma Power Dissipation P D 55 mw Thermal Resistance Die to atmosphere θja 227 o C/W Die to package case θjc 9 o C/W Storage Temperature T STG -5 to 15 o C ESD (Machine Model) 3 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Note 2: Continuos output current is 3mA at 85 o C. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage 28 V Operating Ambient Temperature o C

5 Electrical Characteristics ( =25 o C, =2V, unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Low Supply Voltage V CE =5V, I O =1mA.1.3 V Output Saturation Voltage V SAT 1 I O =5mA.5.8 V Output Saturation Voltage V SAT 2 I O =3mA.25.5 V Output Leakage Current I OL V DO,V DOB =2V.1 1 µa Supply Current I CC =2V, Output Open ma Output Rise Time tr R L =82Ω, C L =2pF 3. 1 µs Output Fall Time tf R L =82Ω, C L =2pF µs Switch Time Differential t R L =82Ω, C L =2pF 3. 1 µs Output Zener Breakdown Voltage V ZO 6 V Magnetic Characteristics ( =25 o C) Parameter Symbol Grade Min Typ Max Unit Operating Point B OP A 1 7 Gauss B 1 Gauss Releasing Point B RP A -7-1 Gauss B -1 Gauss Hysteresis B HYS 8 Gauss V DO (V) Off-state High Turn off B HYS Turn on V SAT Low On-state N B RP B OP S Magnetic Flux Density (Gauss) 5

6 Magnetic Characteristics (Continued) +2V S DO DOB GND Marking Side N R1 82Ω R2 82Ω C1 C2 2pF 2pF DO (V OUT1 ) DOB (V OUT2 ) Figure. Basic Test Circuit DO (V) DOB (V) V SAT V SAT Magnetic Flux Density B (Gauss) Magnetic Flux Density B (Gauss) Figure 5. V DO vs. Magnetic Flux Density Figure 6. V DOB vs. Magnetic Flux Density 6

7 Typical Performance Characteristics I CC (ma) =25 o C B OP /B RP /B HYS (GS) 2-2 B OP B RP B HYS =25 o C (V) (V) Figure 7. I CC vs. Figure 8. B OP /B RP /B HYS vs B OP /B RP /B HYS (GS) 2-2 B OP B RP B HYS =2V P D (mw) ( o C) ( o C) Figure 9. B OP /B RP /B HYS vs. Ambient Temperature Figure 1. P D vs. Ambient Temperature 7

8 Typical Performance Characteristics (Continued) ICC (ma) 11 1 =V =1V =2V V SAT (mv) =2V I O =3mA ( o C) ( o C) Figure 11. I CC vs. Ambient Temperature Figure 12. V SAT vs. Ambient Temperature 8

9 Typical Applications D1 DO DOB GND COIL1 COIL2 R1 Z1 Z2 R1: R1< ( -5.5V)/16mA,.5W (Note 3) Z1, Z2: Zener diode, 2* V Z 6V Figure 13. Typical Application Circuit with D1 Note 3: Recommended R1 for different (V) R1 (Ω) (V) R1 (Ω) k 1k 1.1k 1.2k 1.2k 1.3k 1.3k 9

10 Mechanical Dimensions TO-9 Unit: mm(inch) 1.52(.59) 1.72(.67).5(.2).7(.28) 3.78(.19).8(.161) 5 TYP.7(.28).9(.35).98(.196) 5.28(.28) 1.85(.73).36(.1).51(.2) 1.25(.5) Package Sensor Location (For Hall IC).38(.15).55(.22) 3.5(.136) 3.75(.18).36(.1).5(.2) 1.(.55) 15.3(.62) 1.27(.5) TYP 3.71(.16) 3.91(.15) 1

11 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 16, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, 221, China 8 Yi Advanced Shan Road, Analog Shanghai Circuits 2233, (Shanghai) China Corporation Tel: 8, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 9, 191, Yi Fax: Shan Road, Shanghai 82233, China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 123, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD 392 Semiconductor Huntwood Ave. Corporation Hayward, 392 CA 95, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.16, 3rd Fuzhong Road, Futian District, Shenzhen 51826, China Tel: Taiwan 288 CA Tel : 95, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax: