Symbol Parameter Value Unit. Tstg Storage and operating junction temperature range - 40, T j - 40, + 125
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1 SxH SENSTVE GATE SCR FEATURES T(RMS) =A V DRM = V t V Lw GT < µa K A G DESCRPTON The SxH series f SCRs uses a high perfrmance MESA GLASS PNPN technlgy. These parts are intended fr general purpse applicatins where lw gate sensitivity is required. TO nn-insulated (Plastic) ABSOLUTE RATNGS (limiting values) Symbl Parameter Value Unit T(RMS) T(AV) TSM RMS n-state current ( cnductin angle) Mean n-state current ( cnductin angle) Nn repetitive surge peak n-state current (T j initial = 5 C ) Tc= 95 C A Tc= 95 C 5 A tp =.3 ms 73 A tp = ms 7 t t Value fr fusing tp = ms A s d/dt Critical rate f rise f n-state current G =ma dig/dt =. A/µs. A/µs Tstg Strage and perating junctin temperature range -, + 5 T j -, + 5 C Tl Maximum lead temperature fr sldering during s at.5mm frm case C Symbl Parameter Vltage B D M N Unit V DRM V RRM Repetitive peak ff-state vltage T j = 5 C R GK =KΩ V January 995 /5
2 SxH THERMAL RESSTANCES Symbl Parameter Value Unit Rth(j-a) Junctin t ambient C/W Rth(j-c) Junctin t case fr DC C/W GATE CHARACTERSTCS (maximum values) P G (AV) =.5 W P GM = 5 W (tp = µs) GM = A (tp = µs) ELECTRCAL CHARACTERSTCS Symbl Test Cnditins Sensitivity Unit GT V D =V (DC) R L =Ω Tj= 5 C MAX µa V GT VD=V (DC) RL=Ω Tj= 5 C MAX.5 V VGD VD=VDRM RL=3.3kΩ R GK =KΩ Tj= 5 C MM. V VRGM RG =µa Tj= 5 C MN V tgd VD=VDRM TM= 3xT(AV) d G /dt =.A/µs G = ma Tj= 5 C TYP.5 µs H T= 5mA RGK = KΩ Tj= 5 C MAX ma L G =ma R GK =KΩ Tj= 5 C MAX ma V TM TM = A tp= 3µs Tj= 5 C MAX. V DRM RRM VD =VDRM RGK =KΩ Tj= 5 C MAX 5 µa V R =V RRM Tj= C MAX 5 µa dv/dt V D =7%V DRM R GK =KΩ Tj= C TYP V/µs tq TM =3x T(AV ) V R =35V d/dt=a/µs tp=µs dv/dt=v/µs VD= 7%VDRM RGK = KΩ Tj= C MAX µs ORDERNG NFORMATON SCR MESA GLASS CURRENT /5 S M H SENSTVTY PACKAGE : H = TO Nn-insulated VOLTAGE
3 SxH Fig. : Maximum average pwer dissipatin versus average n-state current. Fig. : Crrelatin between maximum average pwer dissipatin and maximum allwable temperature (Tamb and Tcase) fr different thermal resistances heatsink + cntact. P(W) 3 O 7 DC 5 = 3 = = 9 = = 3 T(AV) P (W) Tcase ( C) Rth = C/W.5 C/W 5 C/W 7.5 C/W = Tamb ( C) -5 Fig.3 : Average n-state current versus case temperature. T(AV) Fig. : Relative variatin f thermal impedance versus pulse duratin. Zth/Rth DC Zth(j-c) =. Zth(j-a) Tcase ( C) tp(s). E-3 E- E- E+ E+ E+ 5E+ Fig.5 : Relative variatin f gate trigger current and hlding current versus junctin temperature. Fig. : Nn repetitive surge peak n-state current versus number f cycles. gt[tj] gt[tj=5 C] h[tj] h[tj=5 C] gt. 3.. h TSM Tj initial = 5 C Number f cycles 3/5
4 SxH Fig.7 : Nn repetitive surge peak n-state current fr a sinusidal pulse with width : tp ms, and crrespnding value f t. Fig. : On-state characteristics (maximum values). TSM. t(a s) Tj initial = 5 C TM Tj initial 5 C TSM t Tj max tp(ms) Tj max Vt =.9V Rt =. V TM (V) /5
5 SxH PACKAGE MECHANCAL DATA TO Nn-insulated (Plastic) DMENSONS REF. Millimetres nches Typ. Min. Max. Typ. Min. Max. G A B J H A.3. B C D.7.5 O P F N C D L M F..5 G 3.. H J L.9.35 N M.7. N N.5. O P.5.5 Marking : Type number Weight :. g nfrmatin furnished is believed t be accurate and reliable. Hwever, SGS-THOMSON Micrelectrnics assumes n respnsability fr the cnsequences f use f such infrmatin nr fr any infringement f patents r ther rights f third parties which may result frm its use. N license is granted by implicatin r therwise under any patent r patent rights f SGS-THOMSON Micrelectrnics. Specificatins mentined in this publicatin are subject t change withut ntice. This publicatin supersedes and replaces all infrmatin previusly supplied. SGS-THOMSON Micrelectrnics prducts are nt authrized fr use as critical cmpnents in life supprt devices r systems withut express written apprval f SGS-THOMSON Micrelectrnics. 995 SGS-THOMSON Micrelectrnics - All rights reserved. SGS-THOMSON Micrelectrnics GROUP OF COMPANES Australia - Brazil - France - Germany - Hng Kng - taly - Japan - Krea - Malaysia - Malta - Mrcc - The Netherlands Singapre - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdm - U.S.A. 5/5
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N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw Figure 1: Package STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL R DS (on) = 0.65 Ω @ 5V CONDUCTION LOSSES
STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB
Ultrafast recovery diode Main product characteristics I F(AV) 2 X 8 A A1 A2 K V RRM 4 V T j 175 C V F (typ) t rr (typ).9 V 25 ns A1 K A2 A1 A2 K Features and benefits TO-22AB T TO-22FPAB FP Very low switching
STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1
STTH61R4TV Ultrafast recovery diode Main product characteristics I F(AV) 2 x 3 A V RRM 4 V T j V F (typ) 15 C.95 V t rr (typ) 24 ns Features and benefits Ultrafast Very low switching losses High frequency
DISCRETE SEMICONDUCTORS DATA SHEET. BF996S N-channel dual-gate MOS-FET. Product specification File under Discrete Semiconductors, SC07
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semicnductrs, SC7 April 1991 FEATURES Prtected against excessive input vltage surges by integrated back-t-back dides between gates and surce. DESCRIPTION
Teccor brand Thyristors 1.5 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by
DO-15 DO-201AD STTH3R04Q STTH3R04
STTH3R4 Ultrafast recovery diode Features Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R4 series uses ST's new 4 V planar Pt doping
Data Sheet. ACPL-8x7 Multi-Channel Full-Pitch Phototransistor Optocoupler. Description. Features. ACPL-827 pin layout.
ACPL-8x7 Multi-Channel ull-pitch Phttransistr Optcupler Data Sheet Lead (Pb) ree RHS 6 fully cmpliant RHS 6 fully cmpliant ptins available; -xxxe dentes a lead-free prduct Descriptin The ACPL-827 is a
T0521SB. Applications. Features. Mechanical Characteristics. Circuit Diagram I/O_1. Description. Pin Configuration
Features Transient prtectin fr high-speed data lines IEC 61000-4-2 (ESD) ±25kV (Air) ±20kV (Cntact) IEC 61000-4-2 (EFT)40A(5/50 ns) Cable Discharge Event (CDE) Package ptimized fr high-speed lines Ultra-small
Asymmetric Gate turn-off Thyristor 5SGA 30J4502
V DRM = 45 V I TGQM = 3 A I TSM = 24 1 3 A V T = 2.2 V r T =.6 mω V Dclink = 28 V Asymmetric Gate turn-off Thyristor 5SGA 3J452 Patented free-floating silicon technology Low on-state and switching losses
ELECTROSÓN BTA24, BTB24, BTA25 BTA26, BTB26, T A standard and Snubberless triacs. Features. Applications. Description
BT4, BTB24, BT5 BT6, BTB26, T25 25 A standard and Snubberless triacs Features High current triac Low thermal resistance with clip bonding High commutation (4 quadrant) or very high commutation (3 quadrant)
MC MC35172 LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS.. GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA/Amp FOR 2.1MHz, 2V/µs
MC3372 MC3572 LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA/Amp FOR 2MHz, 2/µs SINGLE (OR DUAL) SUPPLY OPERATION FROM +4 TO +44 (±2 TO ±22) WIDE INPUT COMMON MODE
BF908; BF908R IMPORTANT NOTICE. use
Rev. 3 14 Nvember 27 Prduct data sheet IMPORTANT NOTICE Dear custmer, As frm Octber 1st, 26 Philips Semicnductrs has a new trade name - NXP Semicnductrs, which will be used in future data sheets tgether
ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)
ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor
STTH6006W. Turbo 2 ultrafast - high voltage rectifier. Features and benefits. Description. Main product characteristics
Turbo 2 ultrafast - high voltage rectifier Table 1. Main product characteristics I (AV) 6 A A K V RRM 6 V T j 175 C V (typ) 1.1 V t rr (max) 6 ns A eatures and benefits Ultrafast switching Low reverse
HCC/HCF4042B QUAD CLOCKED D LATCH
QUAD CLOCKED D LATCH CLOCK POLARITY CONTROL Q AND Q OUTPUTS COMMON CLOCK LOW POWER TTL COMPATIBLE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED TO 20 FOR HCC DEICE 5, 10,
Thyristors 6 Amp Sensitive & Standard SCRs. Sxx06xSx & Sxx06x Series
Sxx06xSx & Sxx06x Series RoHS Description This Sxx06x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
HCC/HCF4093B QUAD 2-INPUT NAND SCHMIDT TRIGGERS
QUAD 2-INPUT NAND SCHMIDT TRIGGERS SCHMITT-TRIGGER ACTION ON EACH INPUT WITH NO EXTERNAL COMPONENTS HYSTERESIS OLTAGE TYPICALLY 0.9 AT DD = 5 AND 2.3 AT DD = 10 NOISE IMMUNITY GREATER THAN 50% OF DD (typ.)
List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... 3~4
List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3~4 Switching time equivalent test circuits... Rating and characteristic curves...
PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRPTON QUCK REFERENCE DATA Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNT rugged dual rectifier diodes in a plastic envelope, featuring low BYV72E- 2 forward voltage drop,
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC133 M74HC INPUT NAND GATE. tpd = 13 ns (TYP.) at VCC =5V
M54HC133 M74HC133 13 INPUT NAND GATE. HIGH SPEED tpd = 13 ns (TYP.) at VCC =5V.LOW POWER DISSIPATION I CC =1µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
NE556 SA556 - SE556 GENERAL PURPOSE DUAL BIPOLAR TIMERS. LOW TURN OFF TIME MAXIMUM OPERATING FREQUENCY GREATER THAN 500kHz
SA - SE GENERAL PURPOSE DUAL BIPOLAR TIMERS. LOW TURN OFF TIME MAXIMUM OPERATING FREQUENCY GREATER THAN 00kHz. TIMING FROM MICROSECONDS TO HOURS. OPERATES IN BOTH ASTABLE AND MONOSTABLE MODES HIGH OUTPUT
Phase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20
WESTCODE An IXYS Company Date:- 18 Sept 27 Data Sheet Issue:- 2 Phase Control Thyristor Types N3533Z#14 to N3533Z#22 Old Type No.: N14CH2-2 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM
2N3904 SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment TO-92 / Bulk -AP TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB
L78L00 SERIES POSITIVE VOLTAGE REGULATORS
L78L00 SERIES POSITIE OLTAGE REGULATORS OUTPUT CURRENT UP TO 100 OUTPUT OLTAGESOF 3.3; 5; ; 8; 9; 12; 15; 18; 24 THERMAL OERLOAD PROTECTION SHORT CIRCUIT PROTECTION NO EXTERNAL COMPONENTS ARE REQUIRED
ST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK)
ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
7.5A LOW DROP POSITIVE VOLTAGE REGULATOR ADJUSTABLE AND FIXED. October 2002
THREE TERMINAL ADJUSTABLE OR FIXED OUTPUT VOLTAGE 1.5V,1.8V, 2.5V, 3.0, 3.3V OUTPUT CURRENT UP TO 7.5A 1.4V MAX DROPOUT VOLTAGE AT FULL LOAD LINE REGULATION: MAX 0.2% OVER FULL TEMPERATURE RANGE LOAD REGULATION:
STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes
STTH31 Ultrafast recovery - 1 V diode Main product characteristics I (AV) 3 A V RRM 1 V T j 175 C V (typ) 1.15 V t rr (typ) 55 ns K A K eatures and benefits Ultrafast, soft recovery Very low conduction
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 3A - 600 D 2 PAK Power MESH IGBT TYPE CES CE(sat) I c STGB3NB60SD 600
List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... Rating and characteristic curves...
List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Electrical characteristics... Rating and characteristic curves... 2 2 3 4 Pinning infrmatin... 5 Marking... Suggested
TEA6422 BUS-CONTROLLED AUDIO MATRIX
BUS-CONTROLLED AUDIO MATRIX 6 Stereo Inputs 3 Stereo Ouputs Gain Control db/mute for each Output Cascadable ( different addresses) Serial Bus Controlled Very Low Noise Very Low Distorsion Fully ESD Protected
ST303C..C SERIES 620A INVERTER GRADE THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25172 rev.
ST303C..C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC148 M74HC148 8 TO 3 LINE PRIORITY ENCODER. tpd = 15 ns (TYP.
M54HC148 M74HC148 8 TO 3 LINE PRIORITY ENCODER. HIGH SPEED tpd = 15 ns (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
Phase Control Thyristor Types N1588NC200 to N1588NC260
Date:- 2 August 212 Data Sheet Issue:- 2 Phase Control Thyristor Types N1588NC2 to N1588NC26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 2-26
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC85 M74HC85 4-BIT MAGNITUDE COMPARATOR. tpd = 22 ns (TYP.) at VCC =5V
M54HC85 M74HC85 4-BIT MAGNITUDE COMPARATOR. HIGH SPEED tpd = 22 ns (TYP.) at VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
. HIGH SPEED .LOW POWER DISSIPATION .OUTPUT DRIVE CAPABILITY M54HCT138 M74HCT138 3 TO 8 LINE DECODER (INVERTING) t PD = 16 ns (TYP.
M54HCT138 M74HCT138 3 TO 8 LINE DECODER (INVERTING). HIGH SPEED t PD = 16 ns (TYP.) at V CC =5V.LOW POWER DISSIPATION ICC =4µAATTA =25 C.OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS