Structuring and bonding of glass-wafers. Dr. Anke Sanz-Velasco

Lithography and Etching

Lithography and Etching Victor Ovchinnikov Chapters 8.1, 8.4, 9, 11 Previous lecture Microdevices Main processes: Thin film deposition Patterning (lithography) Doping Materials: Single crystal (monocrystal)

UNIT 3. By: Ajay Kumar Gautam Asst. Prof. Dev Bhoomi Institute of Technology & Engineering, Dehradun

UNIT 3 By: Ajay Kumar Gautam Asst. Prof. Dev Bhoomi Institute of Technology & Engineering, Dehradun 1 Syllabus Lithography: photolithography and pattern transfer, Optical and non optical lithography, electron,

Update in Material and Process Technologies for 2.5/3D IC Dr. Rainer Knippelmeyer CTO and VP R&D, SÜSS MicroTec AG

Update in Material and Process Technologies for 2.5/3D IC Dr. Rainer Knippelmeyer CTO and VP R&D, SÜSS MicroTec AG TEMPORARY BONDING / DEBONDING AS THIN WAFER HANDLING SOLUTION FOR 3DIC & INTERPOSERS Device

CURRENT STATUS OF NANOIMPRINT LITHOGRAPHY DEVELOPMENT IN CNMM

U.S. -KOREA Forums on Nanotechnology 1 CURRENT STATUS OF NANOIMPRINT LITHOGRAPHY DEVELOPMENT IN CNMM February 17 th 2005 Eung-Sug Lee,Jun-Ho Jeong Korea Institute of Machinery & Materials U.S. -KOREA Forums

Hybrid Wafer Level Bonding for 3D IC

Hybrid Wafer Level Bonding for 3D IC An Equipment Perspective Markus Wimplinger, Corporate Technology Development & IP Director History & Roadmap - BSI CIS Devices???? 2013 2 nd Generation 3D BSI CIS with

custom reticle solutions

custom reticle solutions 01 special micro structures Pyser Optics has over 60 years experience in producing high quality micro structure products. These products are supplied worldwide to industries including

Three Approaches for Nanopatterning

Three Approaches for Nanopatterning Lithography allows the design of arbitrary pattern geometry but maybe high cost and low throughput Self-Assembly offers high throughput and low cost but limited selections

MEEN Nanoscale Issues in Manufacturing. Lithography Lecture 1: The Lithographic Process

MEEN 489-500 Nanoscale Issues in Manufacturing Lithography Lecture 1: The Lithographic Process 1 Discuss Reading Assignment 1 1 Introducing Nano 2 2 Size Matters 3 3 Interlude One-The Fundamental Science

CUSTOM RETICLE SOLUTIONS

CUSTOM RETICLE SOLUTIONS Special Micro Structures Pyser-SGI has over 60 years experience in producing high quality micro structure products. These products are supplied worldwide to industries including

Thin Wafer Handling Challenges and Emerging Solutions

1 Thin Wafer Handling Challenges and Emerging Solutions Dr. Shari Farrens, Mr. Pete Bisson, Mr. Sumant Sood and Mr. James Hermanowski SUSS MicroTec, 228 Suss Drive, Waterbury Center, VT 05655, USA 2 Thin

Hydrodynamics of Diamond-Shaped Gradient Nanopillar Arrays for Effective. DNA Translocation into Nanochannels. (Supplementary information)

Hydrodynamics of Diamond-Shaped Gradient Nanopillar Arrays for Effective DNA Translocation into Nanochannels (Supplementary information) Chao Wang 1, Robert L. Bruce, Elizabeth A. Duch, Jyotica V. Patel,

LATEST INSIGHTS IN MATERIAL AND PROCESS TECHNOLOGIES FOR INTERPOSER AND 3D STACKING

LATEST INSIGHTS IN MATERIAL AND PROCESS TECHNOLOGIES FOR INTERPOSER AND 3D STACKING European 3D TSV Summit, January 22-23, 2013, Grenoble Dr. Rainer Knippelmeyer, CTO and VP of R&D, GM Product Line Bonder

Temporary Wafer Bonding - Key Technology for 3D-MEMS Integration

Temporary Wafer Bonding - Key Technology for 3D-MEMS Integration 2016-06-15, Chemnitz Chemnitz University of Technology Basic Research Fraunhofer ENAS System-Packaging (SP) Back-End of Line (BEOL) Applied

FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST ATMOSPHERIC PRESSURE PLASMA PROCESSES

FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST ATMOSPHERIC PRESSURE PLASMA PROCESSES 1 2 ATMOSPHERIC PRESSURE PLASMA PROCESSES AT THE FRAUNHOFER IST Today, atmospheric pressure plasma

Regents of the University of California

Deep Reactive-Ion Etching (DRIE) DRIE Issues: Etch Rate Variance The Bosch process: Inductively-coupled plasma Etch Rate: 1.5-4 μm/min Two main cycles in the etch: Etch cycle (5-15 s): SF 6 (SF x+ ) etches

EV Group. Enabling processes for 3D interposer. Dr. Thorsten Matthias EV Group

EV Group Enabling processes for 3D interposer Dr. Thorsten Matthias EV Group EV Group in a Nutshell st Our philosophy Our mission in serving next generation application in semiconductor technology Equipment

Top down and bottom up fabrication

Lecture 24 Top down and bottom up fabrication Lithography ( lithos stone / graphein to write) City of words lithograph h (Vito Acconci, 1999) 1930 s lithography press Photolithography d 2( NA) NA=numerical

Carrier Transport by Diffusion

Carrier Transport by Diffusion Holes diffuse ÒdownÓ the concentration gradient and carry a positive charge --> hole diffusion current has the opposite sign to the gradient in hole concentration dp/dx p(x)

1

Process methodologies for temporary thin wafer handling solutions By Justin Furse, Technology Strategist, Brewer Science, Inc. Use of temporary bonding/debonding as part of thin wafer handling processes

Pattern Transfer- photolithography

Pattern Transfer- photolithography DUV : EUV : 13 nm 248 (KrF), 193 (ArF), 157 (F 2 )nm H line: 400 nm I line: 365 nm G line: 436 nm Wavelength (nm) High pressure Hg arc lamp emission Ref: Campbell: 7

DQN Positive Photoresist

UNIVESITY OF CALIFONIA, BEKELEY BEKELEY DAVIS IVINE LOS ANGELES IVESIDE SAN DIEGO SAN FANCISCO SANTA BABAA SANTA CUZ DEPATMENT OF BIOENGINEEING 94720-1762 BioE 121 Midterm #1 Solutions BEKELEY, CALIFONIA

Fabrication Technology, Part I

EEL5225: Principles of MEMS Transducers (Fall 2004) Fabrication Technology, Part I Agenda: Microfabrication Overview Basic semiconductor devices Materials Key processes Oxidation Thin-film Deposition Reading:

Micro- and Nano-Technology... for Optics

Micro- and Nano-Technology...... for Optics U.D. Zeitner Fraunhofer Institut für Angewandte Optik und Feinmechanik Jena Today: 1. Introduction E. Bernhard Kley Institute of Applied Physics Friedrich-Schiller

Wafer bonding. Supplementary Figure 1. Conventional nanofluidic sealing process. (a) Selective sealing. (b) Wafer bonding. (c) Sacrificial etching.

(a) (b) (c) Selective sealing Wafer bonding Sacrificial etching Supplementary Figure 1. Conventional nanofluidic sealing process. (a) Selective sealing. (b) Wafer bonding. (c) Sacrificial etching. Supplementary

AC-829A. Issued on Apr. 15 th 2013 (Version 1.0)

Hitachi Chemical Co., Ltd. Hitachi Anisotropic Conductive Film ANISOLM AC-829A Issued on Apr. 15 th 2013 (Version 1.0) 1. Standard specification, bonding condition, storage condition and characteristic.....1

EE 527 MICROFABRICATION. Lecture 24 Tai-Chang Chen University of Washington

EE 527 MICROFABRICATION Lecture 24 Tai-Chang Chen University of Washington EDP ETCHING OF SILICON - 1 Ethylene Diamine Pyrocatechol Anisotropy: (100):(111) ~ 35:1 EDP is very corrosive, very carcinogenic,

EE C245 ME C218 Introduction to MEMS Design Fall 2007

EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 12: Mechanics

Supplementary Information Our InGaN/GaN multiple quantum wells (MQWs) based one-dimensional (1D) grating structures

Polarized white light from hybrid organic/iii-nitrides grating structures M. Athanasiou, R. M. Smith, S. Ghataora and T. Wang* Department of Electronic and Electrical Engineering, University of Sheffield,

Supplementary Figure 1 Detailed illustration on the fabrication process of templatestripped

Supplementary Figure 1 Detailed illustration on the fabrication process of templatestripped gold substrate. (a) Spin coating of hydrogen silsesquioxane (HSQ) resist onto the silicon substrate with a thickness

4FNJDPOEVDUPS 'BCSJDBUJPO &UDI

2010.5.4 1 Major Fabrication Steps in CMOS Process Flow UV light oxygen Silicon dioxide Silicon substrate Oxidation (Field oxide) photoresist Photoresist Coating Mask exposed photoresist Mask-Wafer Exposed

Dynasylan SIVO 110. Description. Product Information. SIVO SOL Technology for coating systems

Dynasylan SIVO 110 +49-69-218-5656 SIVO SOL Technology for coating systems Description Dynasylan SIVO 110 resembles a multifunctional, basically VOC-free, water-borne sol-gel system. It is composed of

EE 527 MICROFABRICATION. Lecture 25 Tai-Chang Chen University of Washington

EE 527 MICROFABRICATION Lecture 25 Tai-Chang Chen University of Washington ION MILLING SYSTEM Kaufmann source Use e-beam to strike plasma A magnetic field applied to increase ion density Drawback Low etch

E SC 412 Nanotechnology: Materials, Infrastructure, and Safety Wook Jun Nam

E SC 412 Nanotechnology: Materials, Infrastructure, and Safety Wook Jun Nam Lecture 10 Outline 1. Wet Etching/Vapor Phase Etching 2. Dry Etching DC/RF Plasma Plasma Reactors Materials/Gases Etching Parameters

Multilayer Wiring Technology with Grinding Planarization of Dielectric Layer and Via Posts

Tani et al.: Multilayer Wiring Technology with Grinding Planarization (1/6) [Technical Paper] Multilayer Wiring Technology with Grinding Planarization of Dielectric Layer and Via Posts Motoaki Tani, Kanae

Micro/nano and precision manufacturing technologies and applications

The 4th China-American Frontiers of Engineering Symposium Micro/nano and precision manufacturing technologies and applications Dazhi Wang School of Mechanical Engineering Dalian University of Technology

Nanoscale Issues in Materials & Manufacturing

Nanoscale Issues in Materials & Manufacturing ENGR 213 Principles of Materials Engineering Module 2: Introduction to Nanoscale Issues Top-down and Bottom-up Approaches for Fabrication Winfried Teizer,

Etching Capabilities at Harvard CNS. March 2008

Etching Capabilities at Harvard CNS March 2008 CNS: A shared use facility for the Harvard Community and New England CNS Provides technical support, equipment and staff. Explicitly multi-disciplinary w/

Passionately Innovating With Customers To Create A Connected World

Passionately Innovating With Customers To Create A Connected World Multi Die Integration Can Material Suppliers Meet the Challenge? Nov 14, 2012 Jeff Calvert - R&D Director, Advanced Packaging Technologies

Fast Bonding of Substrates for the Formation of Microfluidic Channels at Room Temperature

Supplementary Material (ESI) for Lab on a Chip This journal is The Royal Society of Chemistry 2005 Supporting Information Fast Bonding of Substrates for the Formation of Microfluidic Channels at Room Temperature

LECTURE 5 SUMMARY OF KEY IDEAS

LECTURE 5 SUMMARY OF KEY IDEAS Etching is a processing step following lithography: it transfers a circuit image from the photoresist to materials form which devices are made or to hard masking or sacrificial

Novel Tooling for Scaling of High Quality CVD Graphene Production. Karlheinz Strobl, Mathieu Monville, Riju Singhal and Samuel Wright

Novel Tooling for Scaling of High Quality CVD Graphene Production Karlheinz Strobl, Mathieu Monville, Riju Singhal and Samuel Wright 1 Commercialization of Nano Materials Commercialization Volume production

Nanostructured sensors. Raphaël Pugin Section Head Nanoscale Technology

Nanostructured sensors Raphaël Pugin Section Head Nanoscale Technology Why nanostructures? Adhesion & wettability Optics Photovoltaics Sensors CSEM s DID Superhydrophobicity Anti-icing Dry-adhesion Friction

IC Fabrication Technology

IC Fabrication Technology * History: 1958-59: J. Kilby, Texas Instruments and R. Noyce, Fairchild * Key Idea: batch fabrication of electronic circuits n entire circuit, say 10 7 transistors and 5 levels

SHRINK. STACK. INTEGRATE.

SHRINK. STACK. INTEGRATE. SUSS MICROTEC PRODUCT PORTFOLIO SHAPING THE FUTURE With more than 60 years of engineering experience SUSS MicroTec is a leading supplier of process equipment for microstructuring

Supporting Information. Fast Synthesis of High-Performance Graphene by Rapid Thermal Chemical Vapor Deposition

1 Supporting Information Fast Synthesis of High-Performance Graphene by Rapid Thermal Chemical Vapor Deposition Jaechul Ryu, 1,2, Youngsoo Kim, 4, Dongkwan Won, 1 Nayoung Kim, 1 Jin Sung Park, 1 Eun-Kyu

F R A U N H O F E R I N

FRAUNHOFER Institute FoR Electronic NAno systems ENAS System Packaging 1 2 3 4 5 The actual developments of micro and nano technologies are fascinating. Undoubted they are playing a key role in today s

A Novel Self-aligned and Maskless Process for Formation of Highly Uniform Arrays of Nanoholes and Nanopillars

Nanoscale Res Lett (2008) 3: 127 DOI 10.1007/s11671-008-9124-6 NANO EXPRESS A Novel Self-aligned and Maskless Process for Formation of Highly Uniform Arrays of Nanoholes and Nanopillars Wei Wu Æ Dibyendu

http://kth.diva-portal.org This is an author produced version of a paper published in IEEE 6th International Conference on Micro Electro Mechanical Systems (MEMS), 013. This paper has been peer-reviewed

A New Dielectrophoretic Coating Process for Depositing Thin Uniform Coatings on Films and Fibrous Surfaces

A New Dielectrophoretic Coating Process for Depositing Thin Uniform Coatings on Films and Fibrous Surfaces by Angelo Yializis Ph.D., Xin Dai Ph.D. Sigma Technologies International Tucson, AZ USA SIGMA

A Novel Approach to TSV Metallization based on Electrografted Copper Nucleation Layers. Claudio Truzzi, PhD Chief Technology Officer Alchimer

A Novel Approach to TSV Metallization based on Electrografted Copper Nucleation Layers Claudio Truzzi, PhD Chief Technology Officer Alchimer Overview Introduction Electrografting (eg) Technology Description

Chapter 3 : ULSI Manufacturing Technology - (c) Photolithography

Chapter 3 : ULSI Manufacturing Technology - (c) Photolithography 1 Reference 1. Semiconductor Manufacturing Technology : Michael Quirk and Julian Serda (2001) 2. - (2004) 3. Semiconductor Physics and Devices-

Lecture 18: Microfluidic MEMS, Applications

MECH 466 Microelectromechanical Systems University of Victoria Dept. of Mechanical Engineering Lecture 18: Microfluidic MEMS, Applications 1 Overview Microfluidic Electrokinetic Flow Basic Microfluidic

Industrial In-line and Multi Component Monitor Using Absorption Spectroscopy and Its Application

FFeature Article Article Industrial In-line and Multi Component Monitor Using Absorption Spectroscopy and Its Application Yoko NAKAI HORIBA s CS-Series chemical concentration monitors that use ultraviolet

ETCHING Chapter 10. Mask. Photoresist

ETCHING Chapter 10 Mask Light Deposited Substrate Photoresist Etch mask deposition Photoresist application Exposure Development Etching Resist removal Etching of thin films and sometimes the silicon substrate

Technologies VII. Alternative Lithographic PROCEEDINGS OF SPIE. Douglas J. Resnick Christopher Bencher. Sponsored by. Cosponsored by.

PROCEEDINGS OF SPIE Alternative Lithographic Technologies VII Douglas J. Resnick Christopher Bencher Editors 23-26 February 2015 San Jose, California, United States Sponsored by SPIE Cosponsored by DNS

Hitachi Anisotropic Conductive Film ANISOLM AC-805A. Issued on Apr. 22, 2010

Hitachi Chemical Data Sheet Hitachi Anisotropic Conductive Film ANISOLM AC-85A Issued on Apr. 22, 21 1. Standard specification, bonding condition, storage condition and characteristic....1 2. Precautions

Case Study of Electronic Materials Packaging with Poor Metal Adhesion and the Process for Performing Root Cause Failure Analysis

Case Study of Electronic Materials Packaging with Poor Metal Adhesion and the Process for Performing Root Cause Failure Analysis Dr. E. A. Leone BACKGRUND ne trend in the electronic packaging industry

Figure 1: Graphene release, transfer and stacking processes. The graphene stacking began with CVD

Supplementary figure 1 Graphene Growth and Transfer Graphene PMMA FeCl 3 DI water Copper foil CVD growth Back side etch PMMA coating Copper etch in 0.25M FeCl 3 DI water rinse 1 st transfer DI water 1:10

Application of the GD-Profiler 2 to the PV domain

Application of the GD-Profiler 2 to the PV domain GD Profiler 2 RF GDOES permits to follow the distribution of the elements as function of depth. This is an ultra fast characterisation technique capable

Immersed diffraction gratings for the Sentinel-5 earth observation mission. Ralf Kohlhaas

Immersed diffraction gratings for the Sentinel-5 earth observation mission Ralf Kohlhaas 10-10-2017 Introduction SRON supports earth observation satellite missions with the delivery of immersed diffraction

Resonator Fabrication for Cavity Enhanced, Tunable Si/Ge Quantum Cascade Detectors

Resonator Fabrication for Cavity Enhanced, Tunable Si/Ge Quantum Cascade Detectors M. Grydlik 1, P. Rauter 1, T. Fromherz 1, G. Bauer 1, L. Diehl 2, C. Falub 2, G. Dehlinger 2, H. Sigg 2, D. Grützmacher

SUPPLEMENTARY FIGURES

SUPPLEMENTARY FIGURES a b c Supplementary Figure 1 Fabrication of the near-field radiative heat transfer device. a, Main fabrication steps for the bottom Si substrate. b, Main fabrication steps for the

Solliance. Perovskite based PV (PSC) Program. TKI Urban Energy Days l e d b y i m e c, E C N a n d T N O

Solliance Perovskite based PV (PSC) Program TKI Urban Energy Days - 2017-06-21 l e d b y i m e c, E C N a n d T N O 2 Bringing together research and industry Providing insight and know-how to all partners

Photolithography 光刻 Part II: Photoresists

微纳光电子材料与器件工艺原理 Photolithography 光刻 Part II: Photoresists Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Photolithography 光刻胶 负胶 正胶 4 Photolithography

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems

Instrumental Technique: Cuvette. Md Rabiul Islam

Instrumental Technique: Cuvette Md Rabiul Islam 16-7-2016 What is cuvette? A cuvette is a small tube of circular or square cross section, sealed at one end, made of plastic, glass, or fused quartz (for

Outline. 1 Introduction. 2 Basic IC fabrication processes. 3 Fabrication techniques for MEMS. 4 Applications. 5 Mechanics issues on MEMS MDL NTHU

Outline 1 Introduction 2 Basic IC fabrication processes 3 Fabrication techniques for MEMS 4 Applications 5 Mechanics issues on MEMS 2. Basic IC fabrication processes 2.1 Deposition and growth 2.2 Photolithography

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 143 Fall 2008 Exam 1 Professor Ali Javey Answer Key Name: SID: 1337 Closed book. One sheet

EV Group. Engineered Substrates for future compound semiconductor devices

EV Group Engineered Substrates for future compound semiconductor devices Engineered Substrates HB-LED: Engineered growth substrates GaN / GaP layer transfer Mobility enhancement solutions: III-Vs to silicon

PARTICLE ADHESION AND REMOVAL IN POST-CMP APPLICATIONS

PARTICLE ADHESION AND REMOVAL IN POST-CMP APPLICATIONS George Adams, Ahmed A. Busnaina and Sinan Muftu the oratory Mechanical, Industrial, and Manufacturing Eng. Department Northeastern University, Boston,

BONDING PARAMETERS OPTIMIZATION IN LOW TEMPERATURE ADHESIVE WAFER BONDING PROCESS USING SU-8 AS AN INTERMEDIATE ADHESIVE LAYER

BONDING PARAMETERS OPTIMIZATION IN LOW TEMPERATURE ADHESIVE WAFER BONDING PROCESS USING SU-8 AS AN INTERMEDIATE ADHESIVE LAYER Srinivasulu Korrapati B.E., Anna University, India, 2005 PROJECT Submitted

nmos IC Design Report Module: EEE 112

nmos IC Design Report Author: 1302509 Zhao Ruimin Module: EEE 112 Lecturer: Date: Dr.Zhao Ce Zhou June/5/2015 Abstract This lab intended to train the experimental skills of the layout designing of the

Illuminated Reticle Technologies for Rifle Scopes. Illuminated Reticle Technologies for Riflescopes

Illuminated Reticle Technologies for Rifle Scopes A comparison of the diffraction grating technology with etch-and-fill Illuminated Reticle Technologies for Riflescopes A comparison of the diffraction

SUPPORTING INFORMATION: Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport

SUPPORTING INFORMATION: Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport Keren M. Freedy 1, Ashutosh Giri 2, Brian M. Foley 2, Matthew R. Barone 1, Patrick

Nanotechnology Fabrication Methods.

Nanotechnology Fabrication Methods. 10 / 05 / 2016 1 Summary: 1.Introduction to Nanotechnology:...3 2.Nanotechnology Fabrication Methods:...5 2.1.Top-down Methods:...7 2.2.Bottom-up Methods:...16 3.Conclusions:...19

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. Fall 2009.

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE143 Professor Ali Javey Fall 2009 Exam 1 Name: SID: Closed book. One sheet of notes is allowed.

Wet and Dry Etching. Theory

Wet and Dry Etching Theory 1. Introduction Etching techniques are commonly used in the fabrication processes of semiconductor devices to remove selected layers for the purposes of pattern transfer, wafer

Techniken der Oberflächenphysik (Techniques of Surface Physics)

Techniken der Oberflächenphysik (Techniques of Surface Physics) Prof. Yong Lei & Dr. Yang Xu (& Liying Liang) Fachgebiet 3D-Nanostrukturierung, Institut für Physik Contact: yong.lei@tu-ilmenau.de; yang.xu@tu-ilmenau.de;

CVD: General considerations.

CVD: General considerations. PVD: Move material from bulk to thin film form. Limited primarily to metals or simple materials. Limited by thermal stability/vapor pressure considerations. Typically requires

Basic Digestion Principles

Basic Digestion Principles 1 From Samples to Solutions Direct Analytical Method Solid Sample Problems: Mech. Sample Preparation (Grinding, Sieving, Weighing, Pressing, Polishing,...) Solid Sample Autosampler

SCB10H Series Pressure Elements PRODUCT FAMILY SPEFICIFATION. Doc. No B

PRODUCT FAMILY SPEFICIFATION SCB10H Series Pressure Elements SCB10H Series Pressure Elements Doc. No. 82 1250 00 B Table of Contents 1 General Description... 3 1.1 Introduction... 3 1.2 General Description...

Analyses of LiNbO 3 wafer surface etched by ECR plasma of CHF 3 & CF 4

1998 DRY PROCESS SYMPOSIUM VI - 3 Analyses of LiNbO 3 wafer surface etched by ECR plasma of CHF 3 & CF 4 Naoki Mitsugi, Kaori Shima, Masumi Ishizuka and Hirotoshi Nagata New Technology Research Laboratories,

Analyzing & Testing. Photocalorimetry Photo-DSC. Method, Technique, Applications. Photo-DSC 204 F1. Leading Thermal Analysis

Analyzing & Testing Photocalorimetry Photo-DSC Method, Technique, Applications Photo-DSC 204 F1 Leading Thermal Analysis Photo-DSC 204 F1 Phoenix Method and Technique Advantages of Photocalorimetry Besides

EE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing

EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104-113) S R on D CMOS Manufacturing Process (pp. 36-46) S S C GS G G C GD

An environment designed for success

An environment designed for success The nanofab is a centralized, open-access, training, service, and collaboration facility, focused on academic research and industrial applications in micro- and nanoscale

Nordson MARCH Concord, CA, USA

Overcoming the Challenges Presented with Automated Selective Conformal Coating of Advanced Electronic Assemblies by Employing Plasma Treatment Technology David Foote Nordson MARCH Concord, CA, USA david.foote@nordsonmarch.com

Si/GaAs heterostructures fabricated by direct wafer bonding

Mat. Res. Soc. Symp. Proc. Vol. 681E 2001 Materials Research Society Si/GaAs heterostructures fabricated by direct wafer bonding Viorel Dragoi, Marin Alexe, Manfred Reiche, Ionut Radu, Erich Thallner 1,

Supplementary Material (ESI) for Journal of Analytical Atomic Spectrometry This journal is The Royal Society of Chemistry 2010

Magnetic Solid Phase Microextraction on a Microchip Combined with Electrothermal Vaporization Inductively Coupled Plasma Mass Spectrometry for Determination of, and in Cells Beibei Chen 1, Shujing Heng

56.2: Invited Paper: Pixel-Isolated Liquid Crystal Mode for Plastic Liquid Crystal Displays

56.2: Invited Paper: Pixel-Isolated Liquid Crystal Mode for Plastic Liquid Crystal Displays Jong-Wook Jung, Se-Jin Jang, Min Young Jin, You-Jin Lee, Hak-Rin Kim, and Jae-Hoon Kim Department of Electronics

A Novel Approach to the Layer Number-Controlled and Grain Size- Controlled Growth of High Quality Graphene for Nanoelectronics

Supporting Information A Novel Approach to the Layer Number-Controlled and Grain Size- Controlled Growth of High Quality Graphene for Nanoelectronics Tej B. Limbu 1,2, Jean C. Hernández 3, Frank Mendoza

A Temporary Bonding and Debonding Technology for TSV Fabrication

A Temporary Bonding and Debonding Technology for TSV Fabrication Taku Kawauchi, Masatoshi Shiraishi, Satoshi Okawa, Masahiro Yamamoto Tokyo Electron Ltd, Japan Taku Kawauchi, Tokyo Electron Ltd./Slide

Laser Ion Acceleration: from present to intensities achievable at ELI-Beamlines

Laser Ion Acceleration: from present to intensities achievable at ELI-Beamlines J. Limpouch a,b, J. Pšikal a,b, O. Klimo a,b, J. Vyskočil a,b, J. Proška a,f. Novotný a, L.Štolcová a,b, M. Květoň a a Czech

Electronic Supplementary Information. Continuous Flow Microfluidic-MS System for Efficient OBOC Screening

Electronic Supplementary Material (ESI) for RSC Advances. This journal is The Royal Society of Chemistry 2014 Electronic Supplementary Information Continuous Flow Microfluidic-MS System for Efficient OBOC

Photolithography II ( Part 1 )

1 Photolithography II ( Part 1 ) Chapter 14 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Bjørn-Ove Fimland, Department of Electronics and Telecommunication, Norwegian University of Science

Etching: Basic Terminology

Lecture 7 Etching Etching: Basic Terminology Introduction : Etching of thin films and sometimes the silicon substrate are very common process steps. Usually selectivity, and directionality are the first

Toward Clean Suspended CVD Graphene

Electronic Supplementary Material (ESI) for RSC Advances. This journal is The Royal Society of Chemistry 2016 Supplemental information for Toward Clean Suspended CVD Graphene Alexander Yulaev 1,2,3, Guangjun

Etching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity

Etching Issues - Anisotropy Dry Etching Dr. Bruce K. Gale Fundamentals of Micromachining BIOEN 6421 EL EN 5221 and 6221 ME EN 5960 and 6960 Isotropic etchants etch at the same rate in every direction mask

Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process

Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process Mandar Bhave, Kevin Edwards, Carlton Washburn Brewer Science, Inc., 2401 Brewer Dr., Rolla, MO 65401,

Marcus Klein, SURAGUS GmbH

RPGR2017 21.09.2017 Singapore Marcus Klein, SURAGUS GmbH SURAGUS as company and as EU Gladiator Challenges for industrial Graphene applications Example application graphene as TCM Quality characteristics

Photolithography Overview 9/29/03 Brainerd/photoclass/ECE580/Overvie w/overview

http://www.intel.com/research/silicon/mooreslaw.htm 1 Moore s law only holds due to photolithography advancements in reducing linewidths 2 All processing to create electric components and circuits rely