Pattern Transfer- photolithography
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1 Pattern Transfer- photolithography DUV : EUV : 13 nm 248 (KrF), 193 (ArF), 157 (F 2 )nm H line: 400 nm I line: 365 nm G line: 436 nm Wavelength (nm) High pressure Hg arc lamp emission Ref: Campbell: 7 4-1
2 Why Cleaning Room? 4-2 Class n: particle count < n particles/ft 3 with particle size 0.5 µm or larger. Particle size < 1/10 of the minimum feature size of the device Human hair: µm Dead skin, make-up Walking, sneezing, breathing
3 gowning 4-3 Cleaning Room Layout Class: 10,000 shelves Sputter coater e-beam evaporator profilometer Nanospec 3000 cleanroom Mask aligner, RIE
4 4-4 Particulates Organic residues Inorganic residues: Na, Fe, Ni, Cu, Zn Unwanted oxide layers Wafer Cleaning Piranha: remove inorganic and organic residues and particulates H 2 SO 4 : H 2 O 2 =5:1 at C for 10 min, DI rinse (5 min) x2 PTFE (teflon) tweezers, Chemical gloves, face shield, cap, lab coat, close-toe shoes RCA: 1. SC-1: NH 4 OH: H 2 O 2 : H 2 O=1:1:5 at RT, heat up to C for 10 min, rinse 5 min to remove organic residues 2. HF: 10% for 15-30s to remove oxide PTFE beakers or dishes and tweezers only 3. SC-2: HCl: H 2 O 2 : H 2 O=1:1:6 at C, 10 min, rinse 5 min to remove metal ions and complex residuals, hydroxides to grow chemical oxide
5 More Cleaning 4-5 Tweezers handling and cleaning All tweezers should be degreased by ultrasound bath acetone + isopropanol 10 min each. Plastic tweezers should be cleaned by RCA methods, stored in a storage box Only use teflon coated wafer tweezer for clean wafers. Always wear gloves to handle tweezers. Never touch the tip of a tweezer. Don t drop a tweezer. If you do, leave the dropped tweezer in a dirty box. Glassware cleaning After each use, glassware should be rinsed by solvent or DI water before dipping in KOH/Isopropanol bath overnight. After rinse, glassware should be dried on a hotplate. For photolithography use, all beakers should be covered immediately by Al foil to reduce particulates. Glassware can also go through SC1 and SC2 to remove organic and metallic residues. Glassware can also dip in diluted HF to remove particular sticky contaminants.
6 4-6 Photoresist Ref: Campbell: Positive resist: photochemistry weakens the polymer by scission the polymer chains so the exposed resist becomes more soluble in 1.62 developing Å solutions. PMMA, AZ1512 Negative resist: photochemistry strengthens the polymer by cross-linkage of the chains becoming less soluble in developing solutions. SU-8, nlof2020, 2035
7 Wafer Prime - hexamethyldisilazane 4-7 silanol PR adhere better on hydrophobic surfaces HMDS: (CH 3 ) 3 SiNHSi(CH 3 ) 3 forms Si-O-Si bonds Dehydration bake : 150 C, 30 min HMDS is flammable and carcinogen do it in the hood. HMDS coating + spin dry Bake: C, 60s Vapor primarization: YES oven
8 Photoresist Deposition Spin coater Possible reasons for non-uniform coating. Insufficient PR Spin bowl exhaust rate too high Bubbles in PR Particles exist on the wafer Soft bake: evaporate solvent in the PR Turbulence in the spin bowl Chuck size too small 110 C, 60-90s PR dropping too slow Spin coater cleaning: squirt AZ EBR 70/30 (PGME/PGMEA) in the bowl but not on the chuck. 4-8
9 Photomask Mask polarity dark clear Glass: transmit light from ~300 nm Fused silica: transmit light from 270 nm. 800Å Cr layer for absorption (clear) hole Shadow printing mask island projection printing mask negative PR polarity positive Hole Island Island Hole 1:1 1:10 4-9
10 Shadow Printing Ref: Campbell: 7.5 Contact printing: resolution ~0.7 µm Proximity printing: N 2 gap of µm. less resolution s z Resolution R z k s 2 60 mj/cm Post-exposure bake (PEB): improve adhesion, contrast and resist profile, reduce standing waves 110 C, 60 s 4-10
11 Development Dissolution of unpolymerized resist transforms resist image during exposure to a relief image that will serve as a mask for further etch and deposition steps Positive resist: AZ300 MIF (for AZ1512) Negative resist: AZ300 MIF (for nlof 2020), PGMEA (SU-8) Methods of development Immersion, spray, puddle Negative resist can swell during development using organic solvent and lost adhesion to the substrate. Rinse with DI water. Hard bake: remove solvent and developer, enhance adhesion with substrate, harden resist avoid solvent burst in vacuum processing Resist flows when T > T g (glass transition temperature) 4-11
12 Some Realities Improperly developed PR litho2-04 Negative PR profile Pr1-04 Incomplete PR removal Pr M9_
13 4-13 Photoresist Stripping and Chemical Disposal Without PEB or hard bake, PR can be removed by EBR or acetone. After PEB, PR can be removed by AZ 400 T stripper (for nlof2020) or Nano Remover PG (for AZ1512) at 70 C for 5 min + rinse. SU-8 is very difficult to be removed. Could be removed by Nano Remover PG (MicroChem) at 80 C or by O 2 plasma. On non-metallized surface, Piranha solution could be used to strip PR. Plasma ashing: remove organic and inorganic residues, but not metallic ions C x H y (resist) +O 2 (plasma energized) CO (gas) +CO 2 (gas) +H 2 O Stripper solutions should be dumped into specific glass jars for chemical disposal.
14 SU8- permanent epoxy negative photoresist High-aspect ratio features: µm film thickness in a single coat. Chemical amplification: each photon generate a Lewis acid and catalyzes polymerization After PEB can resist HNO 3, acetone, NaOH, plasma etch Polydimethylglutarimide (PMGI) Fabrication of PDMS molds Cantilevers, micro-arrays 50 µm Microfluidic Actuator High aspect ratio structures No wafer priming required Hard bake: C, 5-30 min 4-14
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