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Roberta Cummings
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2 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (ote 2) Qualified to AEC-Q0 Standards for High Reliability TOP VIEW A G S G H B C SOT-523 im Min Max Typ A B C G H Mechanical ata Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level per -ST-020C Terminals: Solderable per MIL-ST-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See iagram Marking: 72 (See Page 3) Ordering & ate Code Information, See Page 3 Weight: grams (approximate) K Gate rain Source L M K L M All imensions in mm Maximum T A = 25 C unless otherwise specified Characteristic Symbol Value Units rain-source Voltage V SS 60 V rain-gate Voltage R GS.0M V GR 60 V Gate-Source Voltage rain Current (ote ) Continuous Pulsed Continuous 00 C Pulsed V GSS ±20 ±40 5 I Total Power issipation (ote ) P d 50 mw Thermal Resistance, unction to Ambient R A 833 C/W Operating and Storage Temperature Range T j, T STG -55 to +50 C ote:. evice mounted on FR-5 PCB.0 x 0.75 x inch pad layout as shown on iodes, Inc. suggested pad layout AP0200, which can be found on our website at 2. o purposefully added lead. V ma S3030 Rev. 8-2 of T iodes Incorporated

3 EW PROUCT Electrical Chacteristics OFF CHARACTERISTICS (ote T A = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition rain-source Breakdown Voltage BV SS 60 V V GS = 0V, I = 0A Zero Gate Voltage rain T C = 25 T C = 25 C I SS µa V S = 60V, V GS = 0V Gate-Body Leakage I GSS ±0 na V GS = ±20V, V S = 0V O CHARACTERISTICS (ote 3) Gate Threshold Voltage V GS(th) V V S = V GS, I = 250A Static rain-source T j = 25 T j = 25 C R S (O) V GS = 5.0V, I = 0.05A V GS = 0V, I = 0.5A On-State rain Current I (O) A V GS = 0V, V S = 7.5V Forward Transconductance g FS 80 ms V S =0V, I = 0.2A YAMIC CHARACTERISTICS Input Capacitance C iss pf Output Capacitance C oss 25 pf Reverse Transfer Capacitance C rss pf SWITCHIG CHARACTERISTICS V S = 25V, V GS = 0V f =.0MHz Turn-On elay Time t (O) ns V = 30V, I = 0.2A, Turn-Off elay Time t (OFF) 20 ns R L = 50, V GE = 0V, R GE = 25 ote: 3. Short duration test pulse used to minimize self-heating effect. I, RAI-SOURCE CURRET (A) V = 0,7,6V GS V = 5V GS V = 4V GS V = 3V GS R S(O), ORMALIZE RAI-SOURCE O-RESISTACE V GS = 3V V GS = 4V V S, RAI-SOURCE VOLTAGE (V) Fig. On-Region Characteristics V GS = 5, 6, 7, 0V I, RAI-SOURCE CURRET (A) Fig. 2 On-Resistance Variation with Gate Voltage and rain-source Current V GS(th), ORMALIZE THRESHOL VOLTAGE T, UCTIO TEMPERATURE ( C) Fig. 3 Gate Threshold Variation with Temperature R S(O), ORMALIZE O-RESISTACE V GS = 0V I = 500mA T, UCTIO TEMPERATURE ( C) Fig. 4 On-Resistance Variation with Temperature S3030 Rev of T

4 EW PROUCT C, CAPACITACE (pf) C iss I = 50mA 0 C oss C rss V S, RAI-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance V GS, GATE-SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage Ordering Information (ote 4) evice Packaging Shipping 27002T-7-F SOT /Tape & Reel otes: 4. For Packaging etails, go to our website at Marking Information 72YM 72 = Product Type Marking Code YM = ate Code Marking Y = Year (ex: = 2002) M = Month (ex: 9 = September) ate Code Key Year Code P R S T U V W Month an Feb March Apr May un ul Aug Sep Oct ov ec Code O S3030 Rev of T

5 IMPORTAT OTICE iodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. iodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of iodes Incorporated. S3030 Rev of T iodes Incorporated

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)