IRG7PH35UDPbF IRG7PH35UD-EP
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- Dwight Wilkins
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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low V CE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S. Welding Solar Inverter G C E n-channel IRG7PH35UDPbF IRG7PH35UD-EP G C E TO-247AC IRG7PH35UDPbF TO-247AD IRG7PH35UD-EP Induction Heating G C E Gate Collector Emitter Absolute Maximum Ratings C V CES = 2V I NOMINAL = 2A T J(max) = 5 C V CE(on) typ. =.9V Parameter Max. Units V CES Collector-to-Emitter Voltage 2 V I T C = 25 C Continuous Collector Current 5 I T C = C Continuous Collector Current 25 I NOMINAL Nominal Current 2 I CM Pulse Collector Current, V GE =5V 6 I LM Clamped Inductive Load Current, V GE =2V c 8 A I T C = 25 C Diode Continous Forward Current 5 I T C = C Diode Continous Forward Current 25 I FM Diode Maximum Forward Current d 8 V GE Continuous Gate-to-Emitter Voltage ±3 V P T C = 25 C Maximum Power Dissipation 8 P T C = C Maximum Power Dissipation 7 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.7 R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode).65 C/W R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 C G C E PD /8/
2 IRG7PH35UDPbF/IRG7PH35UD-EP Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 2 V V GE = V, I C = 25µA e V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.2 V/ C V GE = V, I C = ma (25 C-5 C) V CE(on) Collector-to-Emitter Saturation Voltage V I C = 2A, V GE = 5V, T J = 25 C 2.3 I C = 2A, V GE = 5V, T J = 5 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 6µA V GE(th) / TJ Threshold Voltage temp. coefficient -6 mv/ C V CE = V GE, I C = 6µA (25 C - 5 C) gfe Forward Transconductance 22 S V CE = 5V, I C = 2A, PW = 3µs I CES Collector-to-Emitter Leakage Current 2. µa V GE = V, V CE = 2V 2 V GE = V, V CE = 2V, T J = 5 C V FM Diode Forward Voltage Drop V I F = 2A 2.5 I F = 2A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±3V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 85 3 I C = 2A Q ge Gate-to-Emitter Charge (turn-on) 5 2 nc V GE = 5V Q gc Gate-to-Collector Charge (turn-on) 35 5 V CC = 6V E on Turn-On Switching Loss 6 3 I C = 2A, V CC = 6V, V GE = 5V E off Turn-Off Switching Loss µj R G = Ω, L = 2uH, L S = 5nH, T J = 25 C E total Total Switching Loss Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 3 5 I C = 2A, V CC = 6V, V GE = 5V t r Rise time 5 3 ns R G = Ω, L = 2uH, L S = 5nH, T J = 25 C t d(off) Turn-Off delay time 6 8 t f Fall time 8 5 E on Turn-On Switching Loss 75 I C = 2A, V CC = 6V, V GE =5V E off Turn-Off Switching Loss 2 µj R G =Ω, L=2uH, L S =5nH, T J = 5 C e E total Total Switching Loss 287 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 3 I C = 2A, V CC = 6V, V GE = 5V t r Rise time 5 ns R G = Ω, L = 2uH, L S = 5nH t d(off) Turn-Off delay time 9 T J = 5 C t f Fall time 2 C ies Input Capacitance 94 pf V GE = V C oes Output Capacitance 2 V CC = 3V C res Reverse Transfer Capacitance 4 f =.Mhz T J = 5 C, I C = 8A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 96V, Vp =2V Rg = Ω, V GE = +2V to V Erec Reverse Recovery Energy of the Diode 79 µj T J = 5 C t rr Diode Reverse Recovery Time 5 ns V CC = 6V, I F = 2A I rr Peak Reverse Recovery Current 4 A V GE = 5V, Rg = Ω, L =.mh, L s = 5nH Notes: V CC = 8% (V CES ), V GE = 2V, R G = 5Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN-86 for guidelines for measuring V (BR)CES safely. R θ is measured at T J of approximately 9 C. 2
3 I C (A) I C (A) I C (A) Load Current ( A ) P tot (W) IRG7PH35UDPbF/IRG7PH35UD-EP Square Wave: For both: Duty cycle : 5% Tj = 5 C Tc = C Gate drive as specified Power Dissipation = 7W 25 V CC 2 5 I Diode as specified 5. f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) Fig. 2 - Maximum DC Collector Current vs. Case Temperature T C ( C) T C ( C) Fig. 3- Power Dissipation vs. Case Temperature µsec DC µsec msec. Tc = 25 C Tj = 5 C Single Pulse. Fig. 4 - Forward SOA T C = 25 C, T J 5 C; V GE =5V Fig. 5 - Reverse Bias SOA T J = 5 C; V GE = 2V 3
4 I CE (A) I F (A) I CE (A) I CE (A) IRG7PH35UDPbF/IRG7PH35UD-EP 8 V 7 GE = 8V V GE = 5V 6 V GE = 2V V GE = V 5 V GE = 8.V V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V Fig. 6- Typ. IGBT Output Characteristics T J = -4 C; tp = 3µs Fig. 7 - Typ. IGBT Output Characteristics T J = 25 C; tp = 3µs V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V C 25 C 5 C Fig. 8 - Typ. IGBT Output Characteristics T J = 5 C; tp = 3µs V F (V) Fig. 9 - Typ. Diode Forward Characteristics tp = 38µs I CE = A I CE = 2A I CE = 4A I CE = A I CE = 2A I CE = 4A V GE (V) V GE (V) Fig. - Typical V CE vs. V GE T J = -4 C Fig. - Typical V CE vs. V GE T J = 25 C 4
5 Energy (µj) Swiching Time (ns) Swiching Time (ns) IRG7PH35UDPbF/IRG7PH35UD-EP 8 7 I C, Collector-to-Emitter Current (A) I CE = A I CE = 2A I CE = 4A T J = 5 C T J = 25 C V GE (V) V GE, Gate-to-Emitter Voltage (V) 4 Fig. 2 - Typical V CE vs. V GE T J = 5 C Fig. 3 - Typ. Transfer Characteristics V CE = 5V, tp = 3µs td OFF 3 E ON t F Energy (µj) 2 td ON E OFF t R I C (A) I C (A) Fig. 4 - Typ. Energy Loss vs. I C T J = 5 C; L = 68µH; V CE = 6V, R G = Ω; V GE = 5V 35 Fig. 5 - Typ. Switching Time vs. I C T J = 5 C; L = 68µH; V CE = 6V, R G = Ω; V GE = 5V 3 25 E ON td OFF 2 t F 5 E OFF td ON t R R G (Ω) R G (Ω) Fig. 6 - Typ. Energy Loss vs. R G T J = 5 C; L = 68µH; V CE = 6V, I CE = 2A; V GE = 5V Fig. 7 - Typ. Switching Time vs. R G T J = 5 C; L = 68µH; V CE = 6V, I CE = 2A; V GE = 5V 5
6 V GE(th), Energy (µj) Gate Threshold Voltage (Normalized) I RR (A) Q RR (µc) I RR (A) I RR (A) IRG7PH35UDPbF/IRG7PH35UD-EP R G = 5.Ω 45 4 R G = Ω 4 3 R G = 47Ω R G = Ω I F (A) R G (Ω) Fig. 8 - Typ. Diode I RR vs. I F T J = 5 C Fig. 9 - Typ. Diode I RR vs. R G T J = 5 C A Ω 5.Ω Ω 47Ω 2A A di F /dt (A/µs) Fig. 2 - Typ. Diode I RR vs. di F /dt V CC = 6V; V GE = 5V; I F = 2A; T J = 5 C di F /dt (A/µs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 6V; V GE = 5V; T J = 5 C 2 R G = 5.Ω 5. I C = 6µA R G = Ω 5 R G = 47Ω 4. R G = Ω I F (A) Fig Typ. Diode E RR vs. I F T J = 5 C T J, Temperature ( C) Fig Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 6
7 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRG7PH35UDPbF/IRG7PH35UD-EP 6 Cies 4 2 V CES = 6V V CES = 4V 8 Coes 6 4 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = MHz Fig Typical Gate Charge vs. V GE I CE = 2A; L = 2.4mH D = Thermal Response ( Z thjc ) Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri. E-6 E t, Rectangular Pulse Duration (sec)... Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) D = R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 7 R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec) SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec)
8 IRG7PH35UDPbF/IRG7PH35UD-EP L L K DUT VCC 8 V + - Rg DUT VCC Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT R = VCC ICM L -5V Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C force K D 22K C sense G force DUT.75µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 8
9 IRG7PH35UDPbF/IRG7PH35UD-EP tf 35 7 tr TEST CURRENT 6 5 9% I CE VCE (V) ICE (A) VCE (V) 4 3 9% test current 4 3 ICE (A) 2 5% V CE 5% I CE 5 2 % test current 5% V CE 2 - Eoff Loss time(µs) Fig. WF - Typ. Turn-off Loss T J = 5 C using Fig. CT Eon Loss time (µs) Fig. WF2 - Typ. Turn-on Loss T J = 5 C using Fig. CT E REC t RR VF (V) Peak I RR % Peak IRR time (µs) Fig. WF3 - Typ. Diode Recovery T J = 5 C using Fig. CT.4 9
10 IRG7PH35UDPbF/IRG7PH35UD-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information GPBP,5)3( + 96U@8P9@ I r)qv h r iy yv rƒ v v v qvph r GrhqA rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F"$ GDI@C TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at
11 IRG7PH35UDPbF/IRG7PH35UD-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('2::,7+($66(%/</,(+ RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$578%(5 '$7(&2'( $66(%/< <($5 /27&2'( :((. /,(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 2/2
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AUTOMOTIVE GRADE AUIRGP466D1 AUIRGP466D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses G Maximum Junction temperature
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6μs SCSOA Square RBSOA 1% of the parts tested for I LM Positive V
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 1% of The Parts Tested for I LM Positive V
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Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High
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INSULATED GATE BIPOLAR TRANSISTOR Features Low V CE(on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient Maximum Junction Temperature
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VS-4MT2UHAPbF Half Bridge IGBT MTP (Ultrafast NPT IGBT), 8 A MTP PRIMARY CHARACTERISTICS V CES 2 V V CE(on) typical at V GE = 5 V 3.36 V I C at T C = 25 C 8 A Speed 8 khz to 3 khz Package MTP Circuit configuration
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE PD - 9.88A UltraFast opack IGBT Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
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Appications Reset Switch for Active Camp Reset DC-DC converters Lead-Free SMPS MOSFET PD -95441 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27A Benefits D Low Gate to Drain Charge to
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IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
More information) unless otherwise specified Symbol Description Values Units
IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
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Ultrafast Soft Recovery Diode 50EBU04 Features Ultrafast Recovery 75 C Operating unction Temperature Screw Mounting Only Lead-Free Plating Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
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8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/
More informationAbsolute Maximum Ratings
IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
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V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
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PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
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KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:
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Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.
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INSULATED GATE BIPOLAR TRANSISTOR PD - 9.695A Fast Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency
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Bulletin PD-079 08/05 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
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V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)
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Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated
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AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
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AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
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XPT TM 5V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXHN5BH S = 5V = A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 5 V V CGR
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PD - 94223B HFB6HY20CC FRED Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets V R = 200V I F(AV) =
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pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
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High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
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PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)
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High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYH1N5CV1HV S 11 = 5V = 1A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5 V V CGR = 5 C to 175 C, R GE
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V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYBNC3H S = V = A (sat) 3.V = 93ns t fi(typ) PLUS TM Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = M V
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HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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High Voltage XPT TM IGBT w/ Diode Preliminary Technical Information IXYX5N5CV1 IXYX5N5CV1HV S 11 = 5V = 5A (sat).v = ns t fi(typ) PLUS7 (IXYX) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5
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XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to
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High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYHN7CV V CES = 7V = A V CE(sat).V = 7ns t fi(typ) Symbol Test Conditions Maximum Ratings V CES = C to 7 C 7 V V CGR = C to 7 C, R GE =
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MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications
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pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
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pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)
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IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 994. The data presented in this manual supersedes all previous
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XPT TM V GenX TM w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for -khz Switching IXXRNBH S = V = 7A (sat).v = ns t fi(typ) ISOPLUS7 TM Symbol Test Conditions Maximum Ratings
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