S G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA
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1 ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion of a bidirecional blocking swich, or for buck converer applicaions. Feaures V DS (V) = 2V I D = 3.4 (V GS = 4.V) R DS(ON) < 9mΩ (V GS = 4.V) R DS(ON) < 2mΩ (V GS = 2.V) R DS(ON) < 6mΩ (V GS =.8V) SCHOTTKY V K (V) = 2V, I F =, V F Top View DFN 3x2 Pin Boom S G K K D D G D S K bsolue Maximum Raings unless oherwise noed Parameer Symbol MOSFET Schoky Unis DrainSource Volage 2 GaeSource Volage ±8 3.4 I Coninuous Drain Curren D T =7 C 2.7 Pulsed Drain Curren B Schoky reverse volage 2.9 I Coninuous Forward Curren F T =7 C.2 Pulsed Forward Curren B P D Power Dissipaion T =7 C..62 Juncion and Sorage Temperaure Range T J, T STG o o C V DS V GS I DM V K I FM V V V W Parameer: Thermal Characerisics MOSFET Symbol Typ Max Maximum Juncionombien s 7 Maximum Juncionombien R θj SeadySae 88 Maximum JuncionoLead C SeadySae R θjl 28 3 Thermal Characerisics Schoky Maximum Juncionombien s 66 8 R θj Maximum Juncionombien SeadySae 9 3 Maximum JuncionoLead C SeadySae R θjl 4 Unis C/W C/W Rev 2: June 2 Page of 6
2 ON473 Elecrical Characerisics (T J =2 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis STTIC PRMETERS BV DSS DrainSource Breakdown Volage I D =2µ, V GS =V 2 V V DS =2V, V GS =V I DSS Zero Gae Volage Drain Curren µ T J = C I GSS GaeBody leakage curren V DS =V, V GS =±8V ± n V GS(h) Gae Threshold Volage V DS =V GS I D =2µ.4.6 V I D(ON) On sae drain curren V GS =4.V, V DS =V R DS(ON) Saic DrainSource OnResisance V GS =4.V, I D =3.4 V GS =2.V, I D =2. V GS =.8V, I D =. 9 T J =2 C mω 83 6 mω g FS Forward Transconducance V DS =V, I D =3.4 2 S V SD Diode Forward Volage I S =,V GS =V.7 V I S Maximum BodyDiode Coninuous Curren 2 DYNMIC PRMETERS C iss Inpu Capaciance 6 74 pf C oss Oupu Capaciance V GS =V, V DS =V, f=mhz 8 pf C rss Reverse Transfer Capaciance 7 pf R g Gae resisance V GS =V, V DS =V, f=mhz 23 Ω SWITCHING PRMETERS Q g Toal Gae Charge 8. nc Q gs Gae Source Charge V GS =4.V, V DS =V, I D =3.4.2 nc Q gd Gae Drain Charge 2. nc D(on) TurnOn DelayTime 7.2 ns r TurnOn Rise Time V GS =4.V, V DS =V, R L =2.9Ω, 36 ns D(off) TurnOff DelayTime R GEN =3Ω 3 ns f TurnOff Fall Time 6 ns rr Body Diode Reverse Recovery Time I F =3.4, di/d=/µs ns Q rr Body Diode Reverse Recovery Charge I F =3.4, di/d=/µs 27 nc SCHOTTKY PRMETERS V F Forward Volage Drop I F =.4. V I rm Maximum reverse leakage curren V R =6V V R =6V, T J =2 C C T Juncion Capaciance V R =V 44 pf rr Schoky Reverse Recovery Time I F =, di/d=/µs 4 ns Q rr Schoky Reverse Recovery Charge I F =, di/d=/µs 2. nc : The value of R θj is measured wih he device mouned on in 2 FR4 board wih 2oz. Copper, in a sill air environmen wih T = 2 C. The value in any given applicaion depends on he user's specific board design. B: Repeiive raing, pulse widh limied by juncion emperaure. C. The R θj is he sum of he hermal impedence from juncion o lead R θjl and lead o ambien. D. The saic characerisics in Figures o 6 are obained using 3µs pulses, duy cycle.% max. E. These ess are performed wih he device mouned on in 2 FR4 board wih 2oz. Copper, in a sill air environmen wih. The SO curve provides a single pulse raing. F. The curren raing is based on he s hermal resisance raing..2 2 mω m COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS RE NOT UTHORIZED. OS DOES NOT SSUME NY LIBILITY RISING OUT OF SUCH PPLICTIONS OR USES OF ITS PRODUCTS. OS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS ND RELIBILITY WITHOUT NOTICE. Rev 2: June 2 Page 2 of 6
3 ON473 TYPICL ELECTRICL ND THERML CHRCTERISTICS V 3.V 2.V 2 6 V DS =V I D () V GS =.V 2.V I D () C 6 2 C V DS (Vols) Fig : OnRegion Characerisics V GS (Vols) Figure 2: Transfer Characerisics R DS(ON) (mω) V GS =2.V V GS =4.V Normalized OnResisance V GS =.8V I D =. V GS =2.V I D =2. V GS =4.V I D = I D () Figure 3: OnResisance vs. Drain Curren and Gae Volage Temperaure ( C) Figure 4: OnResisance vs. Juncion Temperaure 8 E2 I D =3.4 E R DS(ON) (mω) I S () E E E2 E3 E4 2 2 C V GS (Vols) Figure : OnResisance vs. GaeSource Volage E E V SD (Vols) Figure 6: BodyDiode Characerisics Rev 2: June 2 Page 3 of 6
4 ON473 TYPICL ELECTRICL ND THERML CHRCTERISTICS 4 V GS (Vols) V DS =V I D =3.4 Capaciance (pf) C iss C rss C oss Q g (nc) Figure 7: GaeCharge Characerisics 2 V DS (Vols) Figure 8: Capaciance Characerisics I D (mps).... R DS(ON) limied s T J(Max) = C.s DC ms ms µs µs. V DS (Vols) Figure 9: Maximum Forward Biased Safe Operaing rea (Noe E) Power (W) 2 T J(Max) = C... Pulse Widh (s) Figure : Single Pulse Power Raing Junciono mbien (Noe E) Z θj Normalized Transien Thermal Resisance. D=T on /T T J,PK =T P DM.Z θj.r θj R θj = C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse P D T on T Pulse Widh (s) Figure : Normalized Maximum Transien Thermal Impedance Rev 2: June 2 Page 4 of 6
5 ON473 TYPICL ELECTRICL ND THERML CHRCTERISTICS: SCHOTTKY.E I F (mps).e.e.e2.e V F (Vols) Figure 2: Schoky Forward Characerisics Capaciance (pf) f = MHz 2 V K (Vols) Figure 3: Schoky Capaciance Characerisics..E2 V F (Vols) I F =. Leakage Curren ().E3.E4.E V R =6V Temperaure ( C) Figure 4: Schoky Forward Drop vs. Juncion Temperaure.E Temperaure ( C) Figure : Schoky Leakage curren vs. Juncion Temperaure Z θj Normalized Transien Thermal Resisance.. D=T on /T T J,PK =T P DM.Z θj.r θj R θj =3 C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse..... Pulse Widh (s) Figure 6: Schoky Normalized Maximum Transien Thermal Impedance P D T on T Rev 2: June 2 Page of 6
6 ON473 Gae Charge Tes Circui & Waveform Qg DUT Vds V Qgs Qgd Ig Charge Vds RL Resisive Swiching Tes Circui & Waveforms on off d(on) r d(off) f Rg DUT Vdd 9% Vds % Diode Recovery Tes Circui & Waveforms Vds DUT Q = Id rr Vds Ig Isd L Vdd Isd Vds I F di/d I RM rr Vdd Rev 2: June 2 Page 6 of 6
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SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
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SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5
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