1.5A Buck/Boost/Inverting DC-DC Switching Regulator

Size: px
Start display at page:

Download "1.5A Buck/Boost/Inverting DC-DC Switching Regulator"

Transcription

1 P0. Buck/Boost/Inverting DCDC ing egulator FETUE upply oltage: Current Limiting Output Current to. djustable Output oltage Operation frequency up to 0KHz Low Quiescent Current Precision % eference vailable in pin NOIC Package Now vailable in Lead Free Packaging PPLICTION Battery Charger Circuit NICs/es/Hubs DL Modems Negative oltage Power upply DECIPTION The P0 is a monolithic switching regulator control circuit containing the primary functions required for DCDC converters. This device consists of an internal temperature compensated reference, voltage comparator, controlled duty cycle oscillator with active current limit circuit, driver and high current output switch. This device was specifically designed to be used in buck, boost, and oltageinverting applications with a minimum number of external components. The P0 is available in the pin NOIC package. L 0µH Emitter Timing Capacitor GND PIN NOIC TYPICL PPLICTION CICUIT Driver I PK ense CC Comparator Inverting Input P0 0Ω B Q D N9 IN = C 0.Ω C 00µF Ipk OC C T. eference egulator CT 00 pf kω OUT /m L.0 µh OUT.kΩ C 0 µf Optional Filter C 00 µf Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

2 BOLUTE MXIMUM TING These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. Parameter ymbol alue Unit Power upply oltage Comparator Input oltage ange CC 0 I 0. to 0 oltage C ( switch) 0 Emitter oltage (pin=0) E ( switch) 0 to Emitter oltage C E switch) ( 0 Driver oltage C ( driver) 0 Driver Current (Note ) I C ( driver) 00 m Current I W. Power Dissipation and Thermal Characteristics for NOIC Package Power Dissipation (T = ºC) P D mw Thermal esistance ØJ 0 ºC / W Operating Junction Temperature T J 0 º C torage Temperature ange T TG to 0 º C ED (Human Body Model) 000 Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

3 ELECTICL CHCTEITIC Unless otherwise noted, the following specifications apply for CC =.0, T = 0 to C. PMETE YMBOL M IN. T YP. MX. UNIT CONDITION Oscillator Frequency F C Charge Current I HG Discharge Current I ICHG O 0 C 0 0 D KHz µ 0 90 µ Pin = 0, = º C T CT =.0nF C C =.0 to, T = º C C C =.0 to, T = º C Discharge to Charge Current ation / I. DICHG CHG I.. P in to T = º C CC, Current Limit ense oltage PK(sense) Output (note ) 0 I 00 0 m ICHG = I, T = º C DICHG aturation oltage, Dalington Connection CE(sat) E(T). 0. C I W =.0, Pins, connected aturation oltage (note ) CE(T) DC Current Gain h FE 0 I W CC I W T =.0, Pin =, Forced β = 0 =.0, =.0 E = º C C, to Offtate Current I C ( off) µ CE = Comparator Threshold oltage. TH.0. T = º C..0.9 T = 0ºC to º C Threshold oltage egulation Input Bias Current Total Device upply Current Line. EGLINE I IB 0 m 00 n I CC m CC IN = =.0 to 0 C C =.0 to, CT =.0nF, Pin =, Pin > CC TH Note : Low duty cycle pulse techniques are used during the test program to maintain junction temperature as close to ambient temperature as possible. Note : If the output switch is driven into hard saturation (nondarlington configuration) at low switch currents ( 00m) and high driver currents ( 0m), it may take up to.0µs for it to come out of saturation. This condition will shorten the off time at frequencies above 0KHz, and is magnified at high temperatures. This condition does not occur with a Darlington configuration, since the output switch cannot saturate. If a nondarlington configuration is used, the following output drive condition is recommended. Forced β of output switch: I C Output I C driver.0m* 0 *The 00Ω resistor in the emitter of the driver device requires about.0 m before the output switch conducts. Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

4 PIN DECIPTION Pin Number Pin Name Description witching Internal switch transistor collector. witching Emitter Internal switch transistor emitter. T iming Capacitor Timing capacitor to control the switching frequency. G ND Ground pin for all internal circuit. Comparator Inverting Input CC I PK ense Driver Inverting input pin for internal comparator. oltage supply Peak Current ense Input by monitoring the voltage drop across an external I sense resistor to limit the peak current through the switch. oltage driver collector BLOCK DIGM Driver B Q I PK ense CC Comparator Inverting Input I PK OC C T. eference egulator Emitter Timing Capacitor GND Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

5 TYPICL BOOT CONETE CICUIT L 0µH P0 0Ω B Q D N9 IN = C 0.Ω C 00µF Ipk OC C T. eference egulator CT 00 pf kω OUT /m L.0 µh OUT.kΩ C 0 µf Optional Filter C 00 µf This is a typical boost converter configuration. In the steady state, if the resistor divider voltage at pin is greater than the voltage in the noninverting input, which is. determined by the internal reference, the output of the comparator will go low. t the next switching period, the output switch will not conduct and the output voltage will eventually drop below its nominal voltage until the divider voltage at pin is lower than.. Then the output of the comparator will go high, the output switch will be allowed to conduct. ince pin = OUT */() =.(), The output voltage can be decided by OUT =.*()/(). Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

6 TYPICL BUCK CONETE CICUIT P0 B Q IN = C 0.Ω C 00µF Ipk OC C T. eference egulator D N9 CT 0 pf L 0 µh OUT /00m L.0 µh OUT.kΩ.kΩ C 0 µf Optional Filter C 00 µf This is a typical buck converter configuration. The working process in the steady state is similar to a boost converter, pin = OUT */() =.(). The output voltage can be decided by OUT =.*()/(). Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

7 TYPICL INETING CONETE CICUIT P0 B Q IN =. C 0.Ω C 00µF Ipk OC C T. eference egulator L µh CT 00 pf D N9 0.9kΩ OUT /00m L.0 µh OUT.kΩ C 000 µf Optional Filter C 00 µf This is a typical boost converter configuration. The working process in the steady state is similar to a boost converter, the difference in this situation is that the voltage at the noninverting pin of the comparator is equal to. OUT, then pin = OUT */() =., OUT. The output voltage can be decided by OUT =.*()/ (). Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

8 TYPICL PEFOMNCE CHCTEITIC Tonoff Output OnOff Time (us) CC = PIN = CC PIN = GND T = ºC Oscillator Timing Capacitor (nf) toff ton CC = CT = nf T = ºC Figure. Output OnOff Time vs. Oscillator Timing Capacitor Figure. Timing Capacitor Waveform Frequency (khz) CC = Pin = CC Pin = GND T =ºC CT, Oscillator Timing Capacitor (nf) Figure. Osillator Frequency vs. Timing Capacitor Icc upply Current (m)... C T =.0nF PIN = CC 0. PIN = GND cc upply oltage () Figure. tandard upply Current vs. upply oltage aturation oltage () CC = PIN,, = CC PIN, = GND T = ºC Emitter Current () aturation oltage () Current () Darlington Forced Beta = 0 CC = PIN = CC PIN,, = GND T = ºC Figure. Emitter Follower Configuration Output aturation vs. Emitter Current Figure. Common Emitter Configuration Output aturation vs. Current Current Limit ense oltage (m) Temperature Figure. Current Limit ense oltage vs. Temperature Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation

9 PCKGE: Pin NOIC D/ D IDE IEW E E/ E/ E eating Plane Pin Designator to be within this INDEX E (D/ x E/) e TOP IEW b (L) FONT IEW Gauge Plane h h ø ø ø L L eating Plane ø c YMBOL Pin NOIC JEDEC M0 ariation Dimensions in Millimeters: Controlling Dimension MIN NOM MX MIN NOM MX b c E E e h BC.90 BC. BC BC 0. BC 0.00 BC 0.00 L L L EF 0. BC EF 0.00 BC ø 0º º 0º º ø º º º º ø 0º 0º D.90 BC 0.9 BC IPEX Pkg ignoff Date/ev: Dimensions in Inches Conversion Factor: Inch =.0 mm JL ug0 / ev Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation 9

10 ODEING INFOMTION Part Number Temperature ange Package Types P0EN... 0 C to C... pin NOIC P0EN/T... 0 C to C... pin NOIC vailable in lead free packaging. To order add L suffix to part number. Example: P0EN/T = standard; P0ENL/T = lead free /T = Tape and eel Pack quantity is,00 for NOIC. Corporation NLOG EXCELLENCE ipex Corporation Headquarters and ales Office outh Hillview Drive Milpitas, C 90 TEL: (0) 900 FX: (0) 900 ipex Corporation reserves the right to make changes to any products described herein. ipex does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. Date: /9/0 P0. Buck/Boost/Inverting DCDC ing egulator Copyright 00 ipex Corporation 0

11 Mouser Electronics uthorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: Exar: P0ENL/T

BOLUTE MXIMUM TING These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the ope

BOLUTE MXIMUM TING These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the ope P0. Buck/Boost/Inverting DCDC ing egulator FETUE upply oltage: Current Limiting Output Current to. djustable Output oltage Operation frequency up to 0KHz Low Quiescent Current Precision % eference vailable

More information

DC-DC Converter Control Circuits

DC-DC Converter Control Circuits MC0A OUTPUT WITCH CUENT IN EXCE OF.A % EFEENCE ACCUACY LOW UIECENT CUENT:.mA(TYP.) OPEATING FOM TO 0 EUENCY OPEATION TO 00KHz ACTIE CUENT LIMITING DECIPTION The MC0A series is a monolithic control circuit

More information

FEATURES FUNCTIONAL BLOCK DIAGRAM

FEATURES FUNCTIONAL BLOCK DIAGRAM TECHNICAL DATA DC-TO-DC CONVETE CONTOL CICUIT IL0A The IL0A is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal temperature

More information

Switching Regulators MC33063A SOP

Switching Regulators MC33063A SOP MC0A Features Operation from.0 to 0 Input Low Standby Current Current Limiting Output oltage Adjustable Frequency Operation to 00 khz Pb Free Packages are Available Output Current to. A SOP- 0. 0.0-0.0.0

More information

5A Low Dropout Linear Regulator

5A Low Dropout Linear Regulator Solved by SP084 TM 5A Low Dropout Linear Regulator TO-- features INPUT Low Dropout oltage:. Typically at 5A Current Limiting and Thermal Protection Output Current: 5A Current Limit:.5A Operating Junction

More information

AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )

AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View ) UNIVERSAL DC/DC CONVERTER Description Pin Assignments The Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized

More information

PHOTODARLINGTON OPTOCOUPLERS

PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, HBX, and TIL3 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U HB HB2 HB255 HB3 TIL3 FEATURES High sensitivity to low input

More information

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose

More information

KA78TXX. 3-Terminal 3A Positive Voltage Regulator. Features. Description. Internal Block Diagram.

KA78TXX. 3-Terminal 3A Positive Voltage Regulator. Features. Description. Internal Block Diagram. 3Terminal 3A Positive oltage Regulator www.fairchildsemi.com Features Output Current in Excess of 3.0A Output Transistor Safe Operating Area Compensation Power Dissipation: 25W Internal Short Circuit Current

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

MOC8111 MOC8112 MOC8113

MOC8111 MOC8112 MOC8113 PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor

More information

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and

More information

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon

More information

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers

More information

SP6828/ V Low Power Voltage Inverters V OUT C1+ SP6829 C % Voltage Conversion Efficiency +1.15V to +4.2V Input Voltage Range +1.

SP6828/ V Low Power Voltage Inverters V OUT C1+ SP6829 C % Voltage Conversion Efficiency +1.15V to +4.2V Input Voltage Range +1. /689 +V Low Power Voltage Inverters 99.9% Voltage Conversion Efficiency +.V to +.V Input Voltage Range +. Guaranteed Start-up Inverts Input Supply Voltage 0µA Quiescent Current for the µa Quiescent Current

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS

AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS HAA HAA3 HAA2 HAA4 DESCRIPTION The HAAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES Bi-polar

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC0A, MC0A, NCV0A. A, StepUp/Down/ Inverting Switching Regulators The MC0A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices consist

More information

FAN4040 Precision Micropower Shunt Voltage Reference

FAN4040 Precision Micropower Shunt Voltage Reference www.fairchildsemi.com Precision Micropower Shunt Voltage Reference Features Fixed 2.500V, 3.300V and 5.00V s to ±0.1% (25 C) Low output noise Low temperature coefficient to 0ppm/ C Small package Extended

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor PHE139 GENERAL DESCRIPTION The PHE139 is a silicon npn power switching transistor in the TO22AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters,

More information

CD4049UBC CD4050BC Hex Inverting Buffer Hex Non-Inverting Buffer

CD4049UBC CD4050BC Hex Inverting Buffer Hex Non-Inverting Buffer CD4049UBC CD4050BC Hex Inverting Buffer Hex Non-Inverting Buffer General Description The CD4049UBC and CD4050BC hex buffers are monolithic complementary MOS (CMOS) integrated circuits constructed with

More information

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS , A, B, C Designed for Complementary Use with the BD26 Series W at 25 C Case Temperature 0 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E SOT-9

More information

74LCX112 Low Voltage Dual J-K Negative Edge-Triggered Flip-Flop with 5V Tolerant Inputs

74LCX112 Low Voltage Dual J-K Negative Edge-Triggered Flip-Flop with 5V Tolerant Inputs June 1998 Revised February 2001 74LCX112 Low oltage Dual J-K Negative Edge-Triggered Flip-Flop with 5 Tolerant Inputs General Description The LCX112 is a dual J-K flip-flop. Each flip-flop has independent

More information

DM74LS05 Hex Inverters with Open-Collector Outputs

DM74LS05 Hex Inverters with Open-Collector Outputs DM74LS05 Hex Inverters with Open-Collector Outputs General Description This device contains six independent gates each of which performs the logic INVERT function. The open-collector outputs require external

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13. DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability

More information

DM74LS09 Quad 2-Input AND Gates with Open-Collector Outputs

DM74LS09 Quad 2-Input AND Gates with Open-Collector Outputs August 1986 Revised March 2000 DM74LS09 Quad 2-Input AND Gates with Open-Collector Outputs General Description This device contains four independent gates each of which performs the logic AND function.

More information

OBSOLETE - PART DISCONTINUED

OBSOLETE - PART DISCONTINUED General Description The series are three terminal positive regulators designed for a wide variety of applications including local, on-card regulation. The are complete with internal current limiting, thermal

More information

IFX8117. Data Sheet. Standard Power. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV50. Rev. 1.

IFX8117. Data Sheet. Standard Power. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV50. Rev. 1. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV5 Data Sheet Rev. 1.1, 21-7-2 Standard Power 1A Low-Dropout Linear Voltage Regulator IFX8117 1 Overview Features 5 V, 3.3 V and

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized

More information

Optical (2.8) (2.3) PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER

Optical (2.8) (2.3) PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER PACKAGE DIMENSIONS 0.97 (.7) 0.957 (.3) 0.7 (.0) 0.57 (.6) Ø 0.33 (3.) Ø 0.6 (3.) (X) 0.9 (6.35) 0.3 (6.5) D E 0.755 (9.) 0.75 (8.9) 0.39 (.00) 0.3 (0.85) 0.9 (3.3) 0.9 (3.0) 0.03 (.60) NOM 0.33 (.0) 0.

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) N-CHANNEL 3A - 600 D 2 PAK Power MESH IGBT TYPE CES CE(sat) I c STGB3NB60SD 600

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

AOZ6115 High Performance, Low R ON, SPST Analog Switch

AOZ6115 High Performance, Low R ON, SPST Analog Switch OZ6115 High Performance, Low R ON, PT nalog witch General Description The OZ6115 is a high performance single-pole single-throw (PT), low power, TTL-compatible bus switch. The OZ6115 can handle analog

More information

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14. DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities

More information

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE

More information

FIN1531 5V LVDS 4-Bit High Speed Differential Driver

FIN1531 5V LVDS 4-Bit High Speed Differential Driver FIN1531 5V LVDS 4-Bit High Speed Differential Driver General Description This quad driver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver

More information

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5401. PNP Silicon. These are Pb Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage

More information

MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter

MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter General Description The MM74C00, MM74C02, and MM74C04 logic gates employ complementary MOS (CMOS) to achieve wide power

More information

SEMICONDUCTOR TECHNICAL DATA KIA6801K DRIVER BI-DIRECTIONAL DC MOTOR DRIVER

SEMICONDUCTOR TECHNICAL DATA KIA6801K DRIVER BI-DIRECTIONAL DC MOTOR DRIVER SEMICONDUCTOR TECHNICL DT BIPOLR LINER INTEGRTED CIRCUIT BI-DIRECTIONL DC MOTOR DRIER is a monolithic integrated circuit designed for driving bi-directional DC motor with braking and speed control, and

More information

Silicon Diffused Darlington Power Transistor

Silicon Diffused Darlington Power Transistor GENERAL DESCRIPTION Highvoltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE

More information

SC1301A/B. 2A High Speed Low-Side MOSFET Driver in SOT-23 POWER MANAGEMENT. Applications. Typical Application Circuit

SC1301A/B. 2A High Speed Low-Side MOSFET Driver in SOT-23 POWER MANAGEMENT. Applications. Typical Application Circuit 查询 SC1301B 供应商 Description The is a cost effective single-channel highspeed MOSFET driver. The driver is capable of driving a 1000pF load in 0ns rise/fall time and has a 60ns propagation delay time from

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

Excellent Integrated System Limited

Excellent Integrated System Limited Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor CD4050BCN For any questio, you can email us

More information

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DATA SHEET. PDTA114E series PNP resistor-equipped transistors; R1 = 10 kω, R2 = 10 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTA114E series PNP resistor-equipped transistors; R1 = 10 kω, R2 = 10 kω DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET PDT114E series Supersedes data of 1999 May 21 200 pr 10 PDT114E series FETURES uilt-in bias resistors Simplified circuit design Reduction of component count Reduced pick

More information

MMBT3904-G (NPN) General Purpose Transistor. RoHS Device. Features. Maximum Ratings (at TA=25 C unless otherwise noted) Thermal Characteristics SOT-23

MMBT3904-G (NPN) General Purpose Transistor. RoHS Device. Features. Maximum Ratings (at TA=25 C unless otherwise noted) Thermal Characteristics SOT-23 MMBT904-G (NPN) RoHS Device Features -Epitaxial planar die construction -s complementary type, the PNP transistor MMBT904-G is recommended 0.0 (.) 0.047 (.0) SOT- 0.0 (.04) 0. (.80) 0.080 (.04) 0.070 (.78)

More information

MOC205-M MOC206-M MOC207-M MOC208-M

MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.

More information

PN2907 / MMBT2907 PNP General-Purpose Transistor

PN2907 / MMBT2907 PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.

More information

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS MARKING DIAGRAM High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter

More information

DLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, +5 V PROGRAMMABLE LOW DROPOUT VOLTAGE REGULATOR, MONOLITHIC SILICON

DLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, +5 V PROGRAMMABLE LOW DROPOUT VOLTAGE REGULATOR, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DTE PPROVED Prepared in accordance with SME Y14.24 Vendor item drawing REV PGE REV PGE REV STTUS OF PGES REV PGE 1 2 3 4 5 6 7 8 9 10 11 PMIC N/ PREPRED BY RICK OFFICER DL LND

More information

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current

More information

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase

More information

HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications

HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications General Description The is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing,

More information

Miniature Electronically Trimmable Capacitor V DD. Maxim Integrated Products 1

Miniature Electronically Trimmable Capacitor V DD. Maxim Integrated Products 1 19-1948; Rev 1; 3/01 Miniature Electronically Trimmable Capacitor General Description The is a fine-line (geometry) electronically trimmable capacitor (FLECAP) programmable through a simple digital interface.

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

More information

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum

More information

LP8340 Low Dropout, Low I Q, 1.0A CMOS Linear Regulator

LP8340 Low Dropout, Low I Q, 1.0A CMOS Linear Regulator LP8340 Low Dropout, Low I Q, 1.0A CMOS Linear Regulator General Description The LP8340 low-dropout CMOS linear regulator is available in 5, 3.3, 2.5, 1.8 and adjustable output versions. Packaged in the

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

MC78MXX/LM78MXX. 3-Terminal 0.5A Positive Voltage Regulator. Description. Features. Internal Block Digram.

MC78MXX/LM78MXX. 3-Terminal 0.5A Positive Voltage Regulator. Description. Features. Internal Block Digram. 3-Terminal 0.5A Positive oltage Regulator www.fairchildsemi.com Features Output Current up to 0.5A Output oltages of 5, 6, 8, 1, 15, 18, 4 Thermal Overload Protection Short Circuit Protection Output Transistor

More information

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors

More information

HIGH SPEED TRANSISTOR OPTOCOUPLERS

HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist

More information

HIGH SPEED TRANSISTOR OPTOCOUPLERS

HIGH SPEED TRANSISTOR OPTOCOUPLERS DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact pin small outline package. A separate connection

More information

(Note 1) RH1086M ADJ 15V CAPACITOR(S) NOT SHOWN BOTTOM VIEW BOTTOM VIEW V IN ADJ 2 INPUT 1 FINAL SPECIFICATIONS SUBJECT TO CHANGE

(Note 1) RH1086M ADJ 15V CAPACITOR(S) NOT SHOWN BOTTOM VIEW BOTTOM VIEW V IN ADJ 2 INPUT 1 FINAL SPECIFICATIONS SUBJECT TO CHANGE RH086M and. Low Dropout Positive djustable Regulators DESCRIPTION The RH086M positive adjustable regulator is designed to provide for the H package and. for the K package with higher efficiency than currently

More information

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices.  Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

H21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

H21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH HA / HA / HA.07 (.85). (.8) NOTES: 0.9 (6.5) 0. (6.5) 0.5 (.) 0.9 (.0) PACKAGE DIMENSIONS.95 (7.5).7 (6.9) 0.97 (.7) 0.957 (.) 0.7 (.0) 0.57 (.6) D E 0.755 (9.) 0.75 (8.9) 0.9 (.) 0.9 (.0) Ø 0. (.) Ø 0.6

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2001 Jun 11 2004 Jan 13 FETURES High current (max. 1 ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery

More information

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X Features General Description 3.5V to 20V DC operation voltage Temperature compensation Wide operating voltage range Open-Collector pre-driver 25mA maximum sinking output current Reverse polarity protection

More information

AOZ6135 High Performance, Low R ON, 1Ω SPDT Analog Switch

AOZ6135 High Performance, Low R ON, 1Ω SPDT Analog Switch OZ6135 High Performance, Low R ON, 1Ω PDT nalog witch General Description The OZ6135 is a high performance single-pole double-throw (PDT), low power, TTL-compatible bus switch. The OZ6135 can handle analog

More information

Quad bus transceiver; 3-state. The output enable inputs (OEA and OEB) can be used to isolate the buses.

Quad bus transceiver; 3-state. The output enable inputs (OEA and OEB) can be used to isolate the buses. Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance

More information

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING

More information

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability

More information

4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE

4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE Order this document by N/D GlobalOptoisolator The N, N, N7 and N8 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most

More information

Switch Collector. Switch Emitter. Timing Capacitor

Switch Collector. Switch Emitter. Timing Capacitor MC303A, MC3303A, SC303A, SC3303A, NCV3303A. A, Step-Up/Down/ Inverting Switching Regulators The MC303A Series is a monolithic control circuit containing the primary functions required for DC to DC converters.

More information

Part Number UJDS06508T

Part Number UJDS06508T Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27. DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification

More information

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative

More information

Package Type. IXDD614PI 8-Pin DIP Tube 50 OUT 8-Lead Power SOIC with Exposed Metal Back Tube 100

Package Type. IXDD614PI 8-Pin DIP Tube 50 OUT 8-Lead Power SOIC with Exposed Metal Back Tube 100 IXD_64 4-Ampere Low-Side Ultrafast MOSFET Drivers Features 4A Peak Source/Sink Drive Current Wide Operating Voltage Range: 4.V to V - C to +2 C Extended Operating Temperature Range Logic Input Withstands

More information

Low-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages

Low-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages 19-2040; Rev 1; 6/01 Low-Voltage Analog Temperature Sensors General Description The precision, low-voltage, analog output temperature sensors are available in 5-pin SC70 and SOT23 packages. The devices

More information

Low Drop Voltage Regulator TLE 4295

Low Drop Voltage Regulator TLE 4295 Low Drop Voltage Regulator TLE 4295 Features Four versions: 2.6 V, 3.0 V, 3.3 V, 5.0 V tolerance ±4% Very low drop voltage Output current: 30 ma Power fail output Low quiescent current consumption Wide

More information

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power

More information

74LV393 Dual 4-bit binary ripple counter

74LV393 Dual 4-bit binary ripple counter INTEGRATED CIRCUITS Supersedes data of 1997 Mar 04 IC24 Data Handbook 1997 Jun 10 FEATURES Optimized for Low Voltage applications: 1.0 to.6v Accepts TTL input levels between V CC = 2.7V and V CC =.6V Typical

More information

MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE

MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE Low Voltage Reference A precision bandgap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to bits in accuracy,

More information

absolute maximum ratings at 25 C case temperature (unless otherwise noted)

absolute maximum ratings at 25 C case temperature (unless otherwise noted) ,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)

More information

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches

More information

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface

More information

TL601, TL604, TL607, TL610 P-MOS ANALOG SWITCHES

TL601, TL604, TL607, TL610 P-MOS ANALOG SWITCHES TL0, TL0, TL0, TL0 P-MO NLOG WITCHE L0 D, JUNE 9 REVIED OCTOBER 9 witch ± 0-V nalog ignals TTL Logic Capability -to 0-V upply Ranges Low (00 Ω) On-tate Resistance High (0 Ω) Off-tate Resistance -Pin Functions

More information

MM74C908 Dual CMOS 30-Volt Relay Driver

MM74C908 Dual CMOS 30-Volt Relay Driver Dual CMOS 30-Volt Relay Driver General Description The MM74C908 is a general purpose dual high voltage driver capable of sourcing a minimum of 250 ma at V OUT = V CC 3V, and T J = 65 C. The MM74C908 consists

More information

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj Features TAB D 2 PAK 2 1 3 TAB 2 1 DPAK 3 AEC-Q101 qualified SCIS energy of 320 mj @ T J = 25 C Parts

More information

AOZ Ω Low-Voltage Dual-DPDT Analog Switch

AOZ Ω Low-Voltage Dual-DPDT Analog Switch 0.3Ω Low-Voltage Dual-DPDT nalog witch General Description The OZ6274 is a dual Double-Pole, Double-Throw (DPDT) analog switch that is designed to operate from a single 1.65V to 4.3V supply. The OZ6274

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT99 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE

More information

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability

More information

74F379 Quad Parallel Register with Enable

74F379 Quad Parallel Register with Enable 74F379 Quad Parallel Register with Enable General Description The 74F379 is a 4-bit register with buffered common Enable. This device is similar to the 74F175 but features the common Enable rather than

More information

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features. Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter

More information