absolute maximum ratings at 25 C case temperature (unless otherwise noted)
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1 ,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW) 3 Pin is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at C case temperature (unless otherwise noted) Collector-base voltage (I E = 0) voltage (I B = 0) (see Note ) RATING SYMBOL ALUE UNIT B C D B C D Emitter-base voltage EBO Continuous collector current A Continuous base current I B 0. A NOTES:. These values apply when the base-emitter diode is open circuited.. Derate linearly to 0 C case temperature at the rate of W/ C. 3. Derate linearly to 0 C free air temperature at the rate of 8 mw/ C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 0 mh, I B(on) = ma, R BE = 00 Ω, BE(off) = 0, R S = 0. Ω, CC = 0. CBO CEO Continuous device dissipation at (or below) C case temperature (see Note ) P tot W Continuous device dissipation at (or below) C free air temperature (see Note 3) P tot 3. W Unclamped inductive load energy (see Note 4) ½L 00 mj Operating junction temperature range T j -6 to +0 C Operating temperature range T stg -6 to +0 C Operating free-air temperature range T A -6 to +0 C AUGUST REISED JUNE 0
2 ,, B, C, D electrical characteristics at C case temperature (unless otherwise noted) (BR)CEO EO BO I EBO h FE BE(on) CE(sat) EC PARAMETER TESONDITIONS MIN TYP MAX UNIT = 30 ma I B = 0 (see Note ) B breakdown voltage C D cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Base-emitter voltage saturation voltage Parallel diode forward voltage CE = 30 CE = 30 CE = 40 CE = 0 CE = CB = 4 I E =0 CB = I E =0 CB = I E =0 CB = 00 I E =0 CB = 0 I E =0 CB = 4 I E =0 CB = I E =0 CB = I E =0 CB = 00 I E =0 CB = 0 I E =0 = 0 C = 0 C = 0 C = 0 C = 0 C B C D B C D B C ma ma D EB = =0 ma CE = CE = 3 3 = 6 A = A (see Notes and 6) 00 CE = 3 = 6 A (see Notes and 6). I B = ma I B = 0 ma = 6 A = A. (see Notes and 6) 4 I E = A I B = 0 3. NOTES:. These parameters must be measured using pulse techniques, = 300 µs, duty cycle %. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance C/W R θja Junction to free air thermal resistance 3.7 C/W resistive-load-switching characteristics at C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT t on Turn-on time = 0 A I B(on) = 40 ma I B(off) = -40 ma 0.9 µs t off Turn-off time BE(off) = -4. R L = 3 Ω = 0 µs, dc % 7 µs oltage and current values shown are nominal; exact values vary slightly with transistor parameters. AUGUST REISED JUNE 0
3 ,, B, C, D TYPICAL CHARACTERISTICS h FE - Typical DC Current Gain TYPICAL DC CURRENT GAIN CE = 3 = 300 µs, duty cycle < % TCS40AG = C = 00 C Figure. Figure. CE(sat) - Collector-Emitter Saturation oltage - Figure 3. COLLECTOR-EMITTER SATURATION OLTAGE = 300 µs, duty cycle < % I B = / 00 BASE-EMITTER SATURATION OLTAGE = C = 00 C BE(sat) - Base-Emitter Saturation oltage = C = 00 C I B = / 00 = 300 µs, duty cycle < % TCS40AI TCS40AH AUGUST REISED JUNE 0 3
4 ,, B, C, D MAXIMUM SAFE OPERATING REGIONS 00 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 0 B C D CE - Collector-Emitter oltage - Figure 4. THERMAL INFORMATION Figure. 4 AUGUST REISED JUNE 0
5 ,, B, C, D MECHANICAL DATA SOT-93 3-pin plastic flange-mounackage This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuierformance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4, 4,0, 4,7 3,9 4,,37,7, MAX.,30,0 3 6, MAX. 8,0 TYP. 3,0 TYP. 0,78 0,0, 0,8,0 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW AUGUST REISED JUNE 0
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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