Black Phosphorus Field Effect Transistors: Passivation By Oxidation, and the Role of Anisotropy in Magnetotransport
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1 Black Phosphorus Field Effect Transistors: Passivation By Oxidation, and the Role of Anisotropy in Magnetotransport Tomasz Szkopek Electrical and Computer Engineering, Physics 231 st ECS Meeting, 1 June 2017 New Orleans
2 layered materials C (graphite) BN (white graphite) P (black-p) MoS 2 (transition metal dichalcogenide) Bi 2 Se 3 (sesquichalcogenid e) MgB 2 GaSe (group III monochalcogenide) KAl 2 (AlSi 3 O 10 )(OH) 2 (mica) YBa 2 Cu 3 O 7-x (high-t c cuprate) HgI 2 (transition metal halide) 2
3 layered materials C (graphite) BN (white graphite) P (black-p) MoS 2 (transition metal dichalcogenide) Bi 2 Se 3 (sesquichalcogenid e) MgB 2 GaSe (group III monochalcogenide) KAl 2 (AlSi 3 O 10 )(OH) 2 (mica) YBa 2 Cu 3 O 7-x (high-t c cuprate) HgI 2 (transition metal halide) 3
4 black phosphorus (bp) 1914: Bridgman produces first bp 1953: Keyes studies bp as a semiconductor 1968: Berman & Brandt; Witting & Mattias observe superconductivity at high pressure 1970 s s: burst of activity in Japan on electronic properties, Raman, cyclotron resonance 2014: ultra-thin bp FETs reported by Yuanbo Zhang (Fudan) and Peide Ye (Purdue) bulk band gap = 0.3 ev monolayer band gap 1.2 ev 4 A. Morita, Semiconducting Black Phosphorus, Appl. Phys. A39, 227 (1986).
5 bp anisotropy armchair (x) cyclotron effective mass m x m y m z electron hole Fengnian Xia, Nature Comm. 2014, Nature Comm S. Narita, et al. J. Phys. Soc. Jpn. 52, 3544 (1983) 5
6 bp photo-oxidation 20s exposure to ambient air + light Rapid bp photo-oxidation with combination of O 2, H 2 O and light A. Favron. R. Martel, Nature Materials,
7 outline oxidation for top-gated field effect transistors weak-localization & magnetorsistance and anisotropy manuscript in preparation 7
8 oxidation for passivation and thinning oxidation microscop formation y PL efficiency is preserved. Can oxidation be used for gate dielectrics? Jiajie Pei, Xin Gai, B. Luther Davies, Yurei Liu, Nature Comm., PL 8
9 bp FET fabrication bulk bp source: >99.9% purity exfoliation & processing in glove box O 2, H 2 O < 1ppm e-beam lithography, Ti/Au contacts oxidation: 200 mtorr, 300 W RF, 1-3 minutes e-beam lithography, Ti/Au top gates 9
10 etch rate by oxidation oxidation: 10sccm O 2, 200 mtorr, 300 W RF etch rate: 0.10 nm/s or ~0.5 bp layers/s 10
11 XPS + TEM 2.0 P2p 1/2 1.5 Count 10 4 /s 1.0 P2p 3/2 P2p3/2 0.5 P P 2 O Binding Energy (ev) oxidation of bulk bp crystal XPS: elemental P and P 2 O 5 present oxidation of bp flake on SiO 2 /Si TEM: amorphous layer (< 6nm thick), interfacial roughness with 11 bp
12 field effect top gate modulation bottom gate modulation 12 I DS (μa ) I DS (na ) I DS (μa ) I DS (na )
13 field effect mobility I DS (na ) μ FET (cm 2 /Vs) top gate modulation peak FET mobility: 90cm 2 /Vs I DS (μa ) μ FET (cm 2 /Vs) μ FET (cm 2 /Vs) bottom gate modulation peak FET mobility: 60cm 2 /Vs 13
14 mobility limiting mechanisms impurities remote impurities surface roughness scattering V. Tayari et al., Phys. Rev. Applied 5, (2016) 14
15 future: split gate transistors GaAs/AlGaAs quantum point contacts bp split-gate structures M.A. Topinka, et al., Science 289, 2323 (2000). 15
16 outline oxidation for top-gated field effect transistors weak-localization & magnetorsistance and anisotropy N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, and S. Heun, Dephasing in strongly anisotropic black phosphorus, Phys. Rev. B 94, (2016). 16
17 anisotropy : Raman spectroscopy Source ac armchair (x) zz Drain zigzag (y) armchair (x) 17
18 magnetoresistance (a) R 2P (k ) V g =-37.5 V (c) (c) V g =-27 V B (T) R xx (k ) V. Tayari et al., Two dimensional magnetotransport in a naked black phosphorus quantum well, Nature Comm B (T)
19 weak localization b) Source PMMA MMA SiO2 Si Drain c) d) 1 2 Source 3 Drain 4 10 m 10 m 19
20 weak localization fit with theory σ ( B) = e2 2π 2 h Ψ B 0 Ψ 1 B 2 + B ϕ B Ψ(x) = digamma function 0 B φ Φ 0 elastic scattering = Dτ 0 0 length: inelastic scattering length: ϕ = Dτ ϕ S. Hikami, A I. Larkin, and Y. Nagaoka, Prog. of Theor. Phys. 63, 707 (1980). 20
21 localization & anisotropy k z k y k x k x k y k x 3D 2D 1D (quasi- 1D) (quasi- 1D) Electron-electron scattering in a diffusive 2D conductor: 1/2 T ϕ τ ϕ =T 1 Altshuler, Khmelnitzkii, Larkin, Lee, PRB (1980). Abrahams, Anderson, Lee, and Ramakrishnan, PRB (1981). Electron-electron scattering in a diffusive 1D conductor: 1/3 T ϕ τ ϕ =T 2/3 Appenzeller, Martel, Avouris, Stahl, Hunger, Lengeler, PRB (2001). 21 Natelson, Willett, West, and Pfeiffer, PRL (2001).
22 future: pnictogens V P : band overlap N P As Sb Bi spin orbit puckered honeycomb As, Sb, Bi : buckled honeycomb
23 the team Maurizio Peruzzini Firenze Vahid Tayari Francesca Telesio Stefan Heun Pisa Nick Hemsworth Will Dickerson Guillaume Gervais McGill Ibrahim Fakih Tomasz Szkopek McGill 23
24 thank you 24
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