Towards Fully Integrated Power Management

Size: px
Start display at page:

Download "Towards Fully Integrated Power Management"

Transcription

1 Towards Fully Integrated Power Management Jeffrey Morroni General Manager Kilby Power &D Texas Instruments

2 The Power Management EndGame Invisible 100% Efficiency, 0 Volume EasytoUse omplete power management in 1 chip, no EMI Power Supply On a hip VIN Devices onduction osses harge osses Passives Magnetics apacitors Parasitics Device inging IV Overlap everse ecovery 2

3 Typical oss Breakdown Buck onverter onduction 26% IV Overlap osses 37% Device Switching osses 21% 16% Overlap qrr/diode switching conduction Q Topologies an Improve Upon Some or All of the Above

4 Topology lasses Standard onverters Hybrid onverters esonant onverters 1 AUX Q 3 2 S AUX Q 4 Simple and proven ow ost X Hard Switched X Full VIN rated devices educed Device Voltage Stresses educed Energy Storage In Inductors X Hard Switched X Additional omponent(s) educed or eliminated switching losses Majority of energy storage still in X Additional omponent(s)

5 Hybrid onverter Example 1 Q 3 2 Q 4 Advantages More energy storage in caps, less in inductors ower switch ratings and stress Smaller current ripple Disadvantages Added component Duty cycle limitation 17x smaller footprint 34X smaller volume [Nishijima, 2005] [Shenoy], 2015

6 Hybrid onverter Example V 1 Q 3 2 I 1 I 2 Q 4 V Q1 V Q2 V IN /2 V IN V Applied to 1 V charged through phase 1 path 2 current decreases V Q3 V Q4 V IN /2 [Nishijima, 2005] [Shenoy], 2015

7 Hybrid onverter Example V 1 Q 3 2 I 1 I 2 Q 4 V Q1 V Q2 V IN /2 urrent in both inductors decreases No current flowing through V c V Q3 V Q4 V IN /2 [Nishijima, 2005] [Shenoy], 2015

8 Hybrid onverter Example Q 3 V 1 2 I 1 I 2 Q 4 1 current decreases V Applied to 2 Becomes Phase 2 source 2 current increases V Q1 V Q2 V Q3 V Q4 V IN /2 V IN /2 [Nishijima, 2005] [Shenoy], 2015

9 Hybrid onverter Example V 1 Q 3 2 I 1 I 2 Q 4 urrent in both inductors decreases No current flowing through V c V Q1 V Q2 V Q3 V Q4 V IN /2 V IN /2 [Nishijima, 2005] [Shenoy], 2015

10 Hybrid onverter Example V 1 Q 3 2 I 1 I 2 Q 4 V Q1 V Q2 apacitor Voltage and Inductor currents naturally balanced More energy storage in the capacitor, less in inductors Device rated for V IN /2 X Hard Switched X Additional omponent(s) X Duty ycle imitation V Q3 V Q4

11 Advantages apacitors vs. Inductors V 1 Q 3 2 Q 4 apacitor Voltage and Inductor currents naturally balanced More energy storage in the capacitor, less in inductors Device rated for V IN /2 X Hard Switched X Additional omponent(s) X Duty ycle imitation

12 sp Advantages *B. ElKareh,. Hutter, Silicon Analog omponents V 1 Q 3 2 Q 4 apacitor Voltage and Inductor currents naturally balanced More energy storage in the capacitor, less in inductors Device rated for V IN /2 X Hard Switched X Additional omponent(s) X Duty ycle imitation ~8V ated ~0.1mΩmm 2 ~16V ated ~0.6mΩmm 2 Enables Smaller Die Area $$ Savings

13 BVDSS ating (V) FOM Advantages 14 V 1 12 Q Q Normalized FOM (QG * dson) apacitor Voltage and Inductor currents naturally balanced More energy storage in the capacitor, less in inductors Device rated for V IN /2 X Hard Switched X Additional omponent(s) X Duty ycle imitation ~8V ated ~16V ated ~3x5x better FOM in this example

14 V 2 and IV Overlap osses Q 3 V Q 4 apacitor Voltage and Inductor currents naturally balanced More energy storage in the capacitor, less in inductors Device rated for V IN /2 X Hard Switched X Additional omponent(s) X Duty ycle imitation 1 2 Hard Switching osses educed 1/2V 2 V/2 and decreases w/fom improvements IV Overlap 1 2 V IN 2 I t r Assume same DV/DT and DI/DT as a Buck t halves, 2x more transitions, 1/4 the transition losses

15 Buck onverter vs. S Buck onduction 26% IV Overlap osses 37% Device Switching osses 21% 16% Overlap qrr/diode switching Q conduction

16 Adding It All Up Q 3 V 1 2 Vs. Q 4 Dramatic Size eduction Efficiency the same or better than comparison points Major downside of duty cycle limitations

17 Topology lasses Standard onverters Hybrid onverters esonant onverters 1 AUX Q 3 2 S AUX Q 4 Simple and proven ow ost X Hard Switched X Full VIN rated devices educed Device Voltage Stresses educed Energy Storage In Inductors X Hard Switched X Additional omponent(s) educed or eliminated switching losses Majority of energy storage still in X Additional omponent(s)

18 esonant onverter Example AUX S AUX. Nan,. Ayyanar, A 1 MHz Bidirectional Softswitching DD onverter with Planar oupled Inductor for Dual Voltage Automotive Systems

19 esonant onverter Example AUX ~ S AUX I 1 I AUX Typical Buck Operation Inductor current slews down V AUX V SW

20 ~ esonant onverter Example AUX S AUX I 1 I AUX Q2 remains ON holding switched node at ground SAUX turns ON ramping up current in AUX Once AUX current is greater than current, Q1 oss conducts V AUX V SW

21 esonant onverter Example AUX ~ S AUX I 1 I AUX Turn ON Q1 with ZVS AUX current ramps down to zero after which SAUX is turned off V AUX V SW

22 esonant onverter Example AUX ~ S AUX I 1 I AUX Q1 conducts remainder of interval as in typical buck converter V AUX V SW

23 esonant onverter Example AUX ~ S AUX I 1 I AUX V AUX ZVS turn on of ZS turn off of S AUX No IV turn on losses for X Added conduction losses for S AUX X Added die area for S AUX X Extra component losses V SW

24 Analysis and omparison AUX S AUX Vs. 20% Smaller Die oss Breakdown Buck (1MHz) ZVT (1MHz) ond. oss AUX 1.0x ~2.3x Q OSS 1.0x 0.5x Q rr 1.0x 0x IVOverlap (ON) 1.0x 0x IVOverlap (OFF) 1.0x 1.0x D ond. 1.0x 0.2x P GATE 1.0x 1.2x P TOT 1.0x 0.96x

25 Buck onverter Vs. ZVT onduction 26% IV Overlap osses 37% Device Switching osses 21% 16% Overlap qrr/diode switching Q conduction

26 Opportunities AUX S AUX Vs. 20% Smaller Die If cost is a nonfactor (usually isn't), large efficiency gains possible Other main challenge The Magnetic element onduction osses ore losses ost Size

27 Summary New Topologies offer opportunity to move towards full power supply on a chip Options and alternatives with various pros and cons Still need improvements on: Inductor integration apacitor integration Better FETs Better packages 27

28 Questions

Electrical and Thermal Packaging Challenges for GaN Devices. Paul L. Brohlin Texas Instruments Inc. October 3, 2016

Electrical and Thermal Packaging Challenges for GaN Devices. Paul L. Brohlin Texas Instruments Inc. October 3, 2016 Electrical and Thermal Packaging Challenges for GaN Devices Paul L. Brohlin Texas Instruments Inc. October 3, 2016 1 Outline Why GaN? Hard-Switching Losses Parasitic Inductance Effects on Switching Thermal

More information

Benefits of Stacked-Wafer Capacitors for High-Frequency Buck Converters

Benefits of Stacked-Wafer Capacitors for High-Frequency Buck Converters Benefits of Stacked-Wafer Capacitors for High-Frequency Buck Converters Michael W. Baker, PhD Maxim Integrated Power SoC Northeastern University, Boston MA. October 7, 2014 Mobile Device Trends Power Management

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1.

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1. AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 5 C Operating Temperature Lead-Free,

More information

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8 l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

LECTURE 12 Lossy Converters (Static State Losses but Neglecting Switching Losses) HW #2 Erickson Chapter 3 Problems 6 & 7 A.

LECTURE 12 Lossy Converters (Static State Losses but Neglecting Switching Losses) HW #2 Erickson Chapter 3 Problems 6 & 7 A. ETUE 12 ossy onverters (Static State osses but Neglecting Switching osses) HW #2 Erickson hapter 3 Problems 6 & 7 A. General Effects Expected: (load) as (load) B. Switch and esistive osses hange M(D) Modified

More information

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V

More information

IXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S

IXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S X2-Class Power MOSFET V DSS = 6V I D25 = A 38m R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 6 V V DGR = 25 C to 1 C, R GS = 1M 6

More information

Parasitics in Power Electronics Avoid them or Turn Enemies into Friends

Parasitics in Power Electronics Avoid them or Turn Enemies into Friends ECPE Workshop Future Trends or Power Semiconductors ETH Zürich, 27.1.212 Parasitics in Power Electronics Avoid them or Turn Enemies into Friends Fraunhoer Institute or Integrated Systems and Device Technology

More information

2SJ182(L), 2SJ182(S)

2SJ182(L), 2SJ182(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable

More information

Chapter 3. Steady-State Equivalent Circuit Modeling, Losses, and Efficiency

Chapter 3. Steady-State Equivalent Circuit Modeling, Losses, and Efficiency Chapter 3. Steady-State Equivalent Circuit Modeling, Losses, and Efficiency 3.1. The dc transformer model 3.2. Inclusion of inductor copper loss 3.3. Construction of equivalent circuit model 3.4. How to

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)

More information

Nyquist-Rate A/D Converters

Nyquist-Rate A/D Converters IsLab Analog Integrated ircuit Design AD-51 Nyquist-ate A/D onverters כ Kyungpook National University IsLab Analog Integrated ircuit Design AD-1 Nyquist-ate MOS A/D onverters Nyquist-rate : oversampling

More information

6.3. Transformer isolation

6.3. Transformer isolation 6.3. Transformer isolation Objectives: Isolation of input and output ground connections, to meet safety requirements eduction of transformer size by incorporating high frequency isolation transformer inside

More information

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity

More information

IXFT100N30X3HV IXFH100N30X3

IXFT100N30X3HV IXFH100N30X3 X3-Class HiPerFET TM Power MOSFET Advance Technical Information IXFTN3X3HV IXFHN3X3 V DSS = 3V I D25 = A R DS(on) 13.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Symbol Test Conditions

More information

N-Channel Enhancement-Mode Vertical DMOS FET

N-Channel Enhancement-Mode Vertical DMOS FET N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Active Clamp Flyback (Part I) Pei-Hsin Liu

Active Clamp Flyback (Part I) Pei-Hsin Liu Active Clamp Flyback (Part I) Pei-Hsin Liu 1 What will I get out of this session? Purpose: Relevant End Equipments: 1. Demo TI s knowledge base on highdensity adapter 2. Fundamental of ACF operation and

More information

A 51pW Reference-Free Capacitive-Discharging Oscillator Architecture Operating at 2.8Hz. Sept Hui Wang and Patrick P.

A 51pW Reference-Free Capacitive-Discharging Oscillator Architecture Operating at 2.8Hz. Sept Hui Wang and Patrick P. A 51pW Reference-Free apacitive-discharging Oscillator Architecture Operating at 2.8Hz Sept. 28 2015 Hui Wang and Patrick P. Mercier Wireless Sensing Platform Long-Term Health Monitoring - Blood glucose

More information

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs. IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance

More information

2SJ280(L), 2SJ280(S)

2SJ280(L), 2SJ280(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable

More information

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: TO-247 DPG0HB HiPerFED² M I F x 30 t 35ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPG0HB Backside: cathode 1 3 Features / dvantages: pplications: Package: TO-7

More information

VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max.

VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max. D- 909A IRF7329 HXF ower MOSF l rench echnology l Ultra Low On-Resistance l Dual -hannel MOSF l Low rofile (

More information

IXTA24N65X2 IXTP24N65X2 IXTH24N65X2

IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 Preliminary Technical Information X2-Class Power MOSFET S I D25 R DS(on) = 65V = A 15m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 65 V V DGR = 25

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS

More information

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD. Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:

More information

OptiMOS &!Power-Transistor

OptiMOS &!Power-Transistor OptiMOS &!Power-Transistor Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance %!175 C operating temperature

More information

400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using

400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using 400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 30-V (D-S) MOSFET With Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New

More information

KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SIUTR TI T 952P1/1/2 S I T TRSISTR eneral escription 952P1 This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

OptiMOS 3 Power-MOSFET

OptiMOS 3 Power-MOSFET BSB14N8NP3 G OptiMOS 3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Low profile (

More information

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8.  1 l l l l l Generation Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge. PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)

More information

ENGR 2405 Chapter 8. Second Order Circuits

ENGR 2405 Chapter 8. Second Order Circuits ENGR 2405 Chapter 8 Second Order Circuits Overview The previous chapter introduced the concept of first order circuits. This chapter will expand on that with second order circuits: those that need a second

More information

IXTH3N150 V DSS. High Voltage Power MOSFET = 1500V I D25 = 3A 7.3. R DS(on) N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode TO-247

IXTH3N150 V DSS. High Voltage Power MOSFET = 1500V I D25 = 3A 7.3. R DS(on) N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode TO-247 High Voltage Power MOSFET S = 5V I D5 = 3A R DS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-7 Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 5 V V DGR = 5 C to 5 C,

More information

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D. SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I

More information

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1)

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1) SINUTR TNI T N NN S I T TRNSISTR eneral escription 80N08P It s mainly suitable for low voltage applications such as automotive, / converters and a load switch in battery powered applications TURS V SS

More information

IXFR230N20T V DSS. GigaMOS TM Power MOSFET = 200V = 156A. 8.0m t rr. 200ns. (Electrically Isolated Tab)

IXFR230N20T V DSS. GigaMOS TM Power MOSFET = 200V = 156A. 8.0m t rr. 200ns. (Electrically Isolated Tab) GigaMOS TM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR23N2T V DSS = 2V I D25 = 156A R DS(on) 8.m t rr 2ns ISOPLUS247 E153432 Symbol Test

More information

KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SIUTR TI T 26P//2 S I T TRSISTR eneral escription 26P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max

More information

SSF7NS65UF 650V N-Channel MOSFET

SSF7NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

More information

OptiMOS TM Power-MOSFET

OptiMOS TM Power-MOSFET BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (

More information

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V-7 650 V 25 mω 90 A Very high operating

More information

2SJ332(L), 2SJ332(S)

2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from V source Suitable

More information

OptiMOS 3 Power-MOSFET

OptiMOS 3 Power-MOSFET BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product

More information

FG Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits. Package. Overview. Features. Marking Symbol: V7

FG Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits. Package. Overview. Features. Marking Symbol: V7 FG6943 Silicon N-channel MOS FET (FET) Silicon P-channel MOS FET (FET2) For switching circuits Overview FG6943 is N-P channel dual type small signal MOS FET employed small size surface mounting package.

More information

AUIRFS4115 AUIRFSL4115

AUIRFS4115 AUIRFSL4115 Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE

More information

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration

More information

OptiMOS TM 3 Power-MOSFET

OptiMOS TM 3 Power-MOSFET BSB12N3LX3 G OptiMOS TM 3 Power-MOSFET Features Optimized for high switching frequency DC/DC converter Very low on-resistance R DS(on) Excellent gate charge x R DS(on) product (FOM) Low parasitic inductance

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V

More information

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Description xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS

More information

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

More information

An Optimized Converter for Battery-Supercapacitor Interface

An Optimized Converter for Battery-Supercapacitor Interface An Optimized onverter for Battery-Supercapacitor nterface G. Guidi, T.M. Undeland Norwegian University of Science and Technology Dept. of Electric Power Engineering 7491 Trondheim, Norway Abstract-A converter

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

30V GS = 10V 6.2nC

30V GS = 10V 6.2nC pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)

More information

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage

More information

CoolMOS Power Transistor

CoolMOS Power Transistor CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS

More information

7.3 State Space Averaging!

7.3 State Space Averaging! 7.3 State Space Averaging! A formal method for deriving the small-signal ac equations of a switching converter! Equivalent to the modeling method of the previous sections! Uses the state-space matrix description

More information

IXFR18N90P V DSS. Polar TM HiPerFET TM Power MOSFET = 900V I D25 = 10.5A. R DS(on) 300ns. t rr

IXFR18N90P V DSS. Polar TM HiPerFET TM Power MOSFET = 900V I D25 = 10.5A. R DS(on) 300ns. t rr Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S = 9V I D5 =.5A R DS(on) mω 3ns t rr Symbol Test Conditions Maximum Ratings S = 5 C to 15 C 9 V V DGR

More information

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V

More information

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1. Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information

V DSS. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 30 V GS

V DSS. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 30 V GS PD - 97A IRF797PbF Appications Dua SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and Set-Top Box V DSS HEXFET Power MOSFET R DS(on) max 3V Q.4m:@V GS = V 9.A

More information

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

More information

CMOS Comparators. Kyungpook National University. Integrated Systems Lab, Kyungpook National University. Comparators

CMOS Comparators. Kyungpook National University. Integrated Systems Lab, Kyungpook National University. Comparators IsLab Analog Integrated ircuit Design OMP-21 MOS omparators כ Kyungpook National University IsLab Analog Integrated ircuit Design OMP-1 omparators A comparator is used to detect whether a signal is greater

More information

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications. Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com

More information

I. Introduction II. Biochemistry III. Microfluidic Packaging IV. Capacitive Sensors V. Cells Manipulation and Detection.

I. Introduction II. Biochemistry III. Microfluidic Packaging IV. Capacitive Sensors V. Cells Manipulation and Detection. March 2011 Laboratory-on-hip : Outline I. Introduction II. Biochemistry III. Microfluidic Packaging IV. apacitive Sensors V. ells Manipulation and Detection. GBM8320 - Dispositifs Médicaux Intelligents

More information

KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SINUTR TNI T N60P/ N NN S I T TRNSISTR eneral escription N60P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

POWER SUPPLY INDUCED JITTER MODELING OF AN ON- CHIP LC OSCILLATOR. Shahriar Rokhsaz, Jinghui Lu, Brian Brunn

POWER SUPPLY INDUCED JITTER MODELING OF AN ON- CHIP LC OSCILLATOR. Shahriar Rokhsaz, Jinghui Lu, Brian Brunn POWER SUPPY INDUED JITTER MODEING OF AN ON- HIP OSIATOR Shahriar Rokhsaz, Jinghui u, Brian Brunn Rockethips Inc. (A Xilinx, Inc. Division) ABSTRAT This paper concentrates on developing a closed-form small

More information

Preliminary data. Continuous drain current I D 3-2 A

Preliminary data. Continuous drain current I D 3-2 A reliminary data SIMOS SmallSignalTransistor Features Dual and Channel Enhancement mode valanche rated dv/dt rated roduct Summary Drain source voltage DS 6 6 DrainSource onstate R DS(on).. Ω resistance

More information

IXFH400N075T2 IXFT400N075T2

IXFH400N075T2 IXFT400N075T2 Advance Technical Information TrenchT2 TM HiperFET TM Power MOSFET IXFH4N75T2 IXFT4N75T2 V DSS I D25 R DS(on) = 75V = 4A 2.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH)

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating

More information

PolarHT TM Power MOSFET

PolarHT TM Power MOSFET PoarHT TM Power MOSFET N-Channe Enhancement Mode Avaanche Rated S = 6 V I D = A R DS(on) 6. mω Symbo Test Conditions Maximum Ratings TO-3P (IXTQ) S = C to C 6 V V DGR = C to C; R GS = MΩ 6 V Transient

More information

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS

More information

PDN Planning and Capacitor Selection, Part 1

PDN Planning and Capacitor Selection, Part 1 by Barry Olney column BEYOND DESIGN PDN Planning and Capacitor Selection, Part 1 In my first column on power distribution network (PDN) planning, Beyond Design: Power Distribution Network Planning, I described

More information

OptiMOS =Power-Transistor

OptiMOS =Power-Transistor SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications

More information

OptiMOS (TM) 3 Power-Transistor

OptiMOS (TM) 3 Power-Transistor IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V

More information

not recommended for new designs

not recommended for new designs CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability

More information

BME/ISE 3511 Bioelectronics - Test Six Course Notes Fall 2016

BME/ISE 3511 Bioelectronics - Test Six Course Notes Fall 2016 BME/ISE 35 Bioelectronics - Test Six ourse Notes Fall 06 Alternating urrent apacitive & Inductive Reactance and omplex Impedance R & R ircuit Analyses (D Transients, Time onstants, Steady State) Electrical

More information

04 Matching Networks. Dipl.-Ing. Dr. Michael Gebhart, MSc

04 Matching Networks. Dipl.-Ing. Dr. Michael Gebhart, MSc 04 Matching Networks 4th unit in course 3, F Basics and omponents ipl.-ing. r. Michael Gebhart, Mc FI Qualification Network, University of pplied ciences, ampus W 013/14, eptember 30 th ontent Introduction:

More information

OptiMOS TM -T2 Power-Transistor

OptiMOS TM -T2 Power-Transistor OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow

More information

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level

More information