Active Clamp Flyback (Part I) Pei-Hsin Liu
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1 Active Clamp Flyback (Part I) Pei-Hsin Liu 1
2 What will I get out of this session? Purpose: Relevant End Equipments: 1. Demo TI s knowledge base on highdensity adapter 2. Fundamental of ACF operation and challenge on ZVS control 1. High Density AC Adapter or Charger 2. USB Power Delivery Chargers 3. AC/DC or DC/DC Auxiliary Power Supply
3 Agenda Introduction of Active Clamp Flyback (ACF) Impact of Nonlinear Capacitance of switching device on ACF 1) Impact on ZVS Voltage Transition 2) Impact on Resonance Clamp Current Summary
4 Cable-end Eff. (%) Adapter Density and Eff Comparison Flyback: PCF or ACF Three-level LLC 20V/65W output 3-level LLC (C) ᵑ ACF (B) ACF PCF(A) (B) 3-Level LLC (A) V ac (V) Soft switching 65W Adapter Topology Power Density f sw (khz) Primary Switches High-side drivers Switching Devices A Passive-clamp Flyback (PCF) 11W/in 3 150~260 1 pcs 0 pcs Si B Active-clamp Flyback (ACF) 14W/in 3 120~165 2 pcs 1 pcs SiC/Si C Three-level LLC 17W/in 3 300~500 4 pcs 3 pcs Si
5 Percentage (%) Issues of DCM Flyback + Passive Clamp Clamp Loss: V 1 P L i f clamp 2 clamp k m( ) sw Vclamp NVo 2 Switching Loss: 1 P C V f 2 2 Switching sw bulk sw V clamp NV o RM6 XFMR (N=3.25, L k =3uH), 650V/650mΩ Silicon FET V clamp =130V, 20V/30W, V bulk =230 2V f sw V bulk i m(+) NVo 7 6 P Clamp /30W P Switching /30W k 200k 300k f sw (Hz)
6 Transition Mode (TM) + Active Clamp P Clamp P Switching P Core P Winding A High Higher Higher Mid B High Mid Lower Lower C 0 (to output) 0 (ZVS) Middle Higher Due to higher i m(-) and (A) Passive-clamp + DCM (B) Passive-clamp + TM (C) Active-clamp + TM V bulk
7 Operation of Active Clamp Flyback (ACF) I II III IV V VII VI I Region I Region II V sw V gs(qh) V gs(ql) i m Region I : As Q L on, i m peak increases and L m stores energy i QL i sec Region II : After Q L off, i m charges C oss(ql) and discharge C oss(qh) so V sw rises to V bulk +V clamp before Q H turns on
8 Operation of ACF: (III to IV) II III I IV V VII VI I Region III Region IV V sw V gs(qh) V gs(ql) i m Region III : i m forces Q H body diode on, so V clamp charges to N V o i QL i sec Region IV : After Q H on, N V o demagnetizes L m, so i m decades. C clamp resonating with L k stores L k energy. L m releases energy to output, i sec = (i m - )N
9 Operation of ACF: (V to VI) II III I IV V VII VI I Region V Region VI V sw V gs(qh) V gs(ql) i m i QL i sec Region V : C clamp resonating with L k releases L k energy to output. Region VI : Output diode switches off as i sec resonating to 0A (ZCS). V clamp demagnetizes L m, so i m decades more negatively.
10 Operation of ACF: (VII to I) II III I IV V VII VI I Region VII Region I V sw V gs(qh) V gs(ql) i m i QL i sec i m(-) ZVS criteria: 1 1 L i C V m m( ) sw sw Region VII : After Q H off, i m(-) discharges C oss(ql) and charges C oss(qh) so V sw falls from V bulk +V clamp to 0V Region I : Q L turns on as V sw close to 0V (zero voltage switching, ZVS)
11 C oss (pf) Junction Capacitance of Si and GaN ZVS criteria: C oss = 47pF (680mΩ +1.8A Si FET) +1.8A i m(pk-pk) =2.25A 1 1 L i C V m m( ) sw ds (RMS) =810mA -0.5A (RMS) =686mA C oss = 15pF (500mΩ GaN FET) +1.44A i m(pk-pk) =1.74A (RMS) =612mA -0.3A (RMS) =530mA Effect on C oss Nonlinearity: Si FET 680mΩ Si FET 180mΩ GaN FET 500mΩ GaN FET 150mΩ V ds (V) For GaN: Linear scaling between R ds(on) and C oss For Si: lower R ds(on) more C oss nonlinearity
12 Agenda Introduction of Active Clamp Flyback (ACF) Impact of Nonlinear Capacitance of switching device on ACF 1) Impact on ZVS Voltage Transition 2) Impact on Resonance Clamp Current Summary
13 C oss (pf) (1) Impact on ZVS Voltage Transition V sw Si FET (680mΩ) GaN FET (500mΩ) From Q H Affect: (1) Longer dead time f sw limitation (Q H off to Q L on) GaN FET (500mΩ) From Q L Si FET (680mΩ) (2) Virtual short as gate off Higher i m(-) V ds (V)
14 Voltage (V) Voltage (V) Current (A) Current (A) V gs(qh) ZVS Criteria: C clamp design to Reduce Upper Flat Area Improve: Resonance > Q H on time to reduce its nonlinear cap effect (C clamp =100nF) (C clamp =600nF) i m i m(-) -0.9A V sw (180mΩ Si FET) 340ns 1 1 L i C V m m( ) sw ds V gs(qh) ZVS Criteria: i m V sw (180mΩ Si FET) 340ns i m(-) -0.8A (-) L i L i C V m m( ) k clamp( ) sw ds
15 DC/DC Efficiency C oss (pf) Partial ZVS to Reduce Lower Flat Area Condition: 20V/30W, RM6, C3/C3 (SPP02N60C3), Secondary SR (BSC360N15NS3) (RMS=0.717A) (RMS=0.626A) Full ZVS V sw Partial ZVS V sw Partial ZVS Full ZVS V bulk (V) nF Si FET 680mΩ 26.2% less conduction loss!! 263pF V ds (V)
16 P Switching (W) Loss Reduction (W) (RMS) (A) Trade-off of Partial ZVS for Si FET Condition: 20V/30W, RM6, C3/C3 (SPP02N60C3), Secondary SR (BSC360N15NS3) (gain) Conduction loss reduction V sw V sw 0.57 ZVS point (V) V bulk =375V ZVS point (V) For Si, larger loss reduction at 10V; Peak at 20V For GaN, full ZVS gives best efficiency (Lost) Turn-on loss increasing ZVS point (V)
17 (2) Impact on Resonance Clamp Current vs. Schottky Condition: V bulk =325V, V o =20V/30W Primary Switch Secondary Rectifier Schottky diode Sync. Rectifier (SR) Silicon vs. GaN SR Silicon FET (650mΩ) -0.5A -0.55A Observation: (RMS) =686mA (RMS) =600mA Loss C oss on primary (GaN) + Higher C oss on secondary (SR) Significant less Primary RMS current GaN FET (500mΩ) -0.3A (RMS) =530mA -0.35A (RMS) =349mA
18 C oss (pf) 1A/div Si FET: Slower dv sw /dt, Less d /dt di pri dt 1 [ N Vsec Vpri ] L k Voltage polarity change on L k eliminates the current dip. (A) 1.6 i m 1.2 Silicon C C oss(sr) /N 2 oss(qh) : Si V pri < N V sec as higher C oss(qh) 10 (V) μs/div 0.8 (low C oss(qh) ) (V) V pri NV sec (high C oss(qh) ) (high C oss(sr) ) 10ns/div
19 C oss (pf) 1A/div GaN FET: Faster dv sw /dt, Larger d /dt GaN C oss(sr) /N 2 C oss(qh) : GaN di pri dt 10 (V) [ N Vsec Vpri ] L k 1μs/div V pri > N V sec as V sw rising (V) Negative di/dt reduces, so (A) 1.3 more i m is delivered to output V pri i m (high C oss(sr) ) NV sec 10ns/div
20 AC/DC Efficiency Trade-off of C oss(sr) to GaN-based ACF Condition: V o =20V/30W, RM6, 650V/500mΩ GaN R ds(on) C oss(sr) Q g 0.95 SR1 36mΩ 106pF (@75V) 12nC SR1 SR2 Schottky 0.89 V ac SR2 16mΩ 214pF (@75V) 23nC +1.32A +1.4A -0.35A -0.4A SR1 (V bulk =325V) Higher C oss(sr) : (Pros) Less resonance energy for less RMS current (Cons) - Larger ZVS energy results in higher i m(pk-pk), higher core loss - Larger driving loss from higher Q g i m(pk-pk) =1.67A (RMS)=443mA SR2 (V bulk =325V) i m(pk-pk) =1.8A (RMS) =432mA
21 (RMS) (A) DC/DC Efficiency (%) Full-Load Eff Comparison: GaN vs. Si Condition: 20V/30W, RM6, SR (BSC360N15NS3), Si FET(600V, 680mΩ) ; GaN (650V, 500mΩ) 600V Si+ Partial ZVS 650V GaN+ Full ZVS 2% 600V Si+ + Partial ZVS 650V GaN+ Full ZVS 3% V bulk (V) V bulk (V) Eff difference at low line will >2% as including input stage!
22 Conclusion Clamping and switching losses are the limitation of passive clamp flyback converter. Active clamp flyback (ACF) eliminates clamping and switching losses in tradeoff with conduction loss and transformer core loss. GaN-based ACF has advantage over silicon due to less winding loss and core loss. C oss nonlinearity impact and potential solutions using Si FET are addressed. (a) Clamp cap design to overcome high C oss on the high-side switch (b) Partial ZVS to overcome high C oss on the low-side switch
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BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T
Trench TM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T V DSS = 2V I D25 = 76A R DS(on) 44m Typical Avalanched BV = V TO-3 AA (IXTA) TO-2AB (IXTP) TO-3P (IXTQ) G S
IXFH42N60P3. Polar3 TM HiperFET TM Power MOSFET. = 600V = 42A 185m. Preliminary Technical Information. R DS(on)
Polar3 TM HiperFET TM Power MOSFET Preliminary Technical Information V DSS I D2 R DS(on) = V = 42A 8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum
CAS300M17BM2 1.7kV, 8.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
Datasheet: CAS3M17BM2,Rev. A CAS3M17BM2 1.7kV, 8. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A, 1 C R DS(on) 1.7 kv 23 mj 8. mω Features Ultra Low Loss
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information V DSS = 55 V I D25 = A R DS(on) 8.8 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175
OptiMOS 3 M-Series Power-MOSFET
BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS
OptiMOS 3 M-Series Power-MOSFET
BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R
IXTN600N04T2. TrenchT2 TM GigaMOS TM Power MOSFET = 40V = 600A. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TrenchT2 TM GigaMOS TM Power MOSFET IXTN6N4T2 V DSS = 4V I D25 = 6A R DS(on) 1.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode minibloc, SOT-227 E153432 Symbol Test Conditions Maximum
CoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
EPC2107 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap
Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap V DSS, V R DS(on), 9 mω I D,.7 A EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed
GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
IXFA7N100P IXFP7N100P IXFH7N100P
Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7NP IXFP7NP V DSS = V I D = 7A R DS(on).9 TO-3 (IXFA) Symbol Test Conditions Maximum Ratings V
IXTT440N04T4HV V DSS
Advance Technical Information TrenchT4 TM Power MOSFET IXTT44N4T4HV V DSS = 4V I D25 = 44A R DS(on).25m N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings V DSS
OptiMOS 2 Power-Transistor
BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary
OptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
OptiMOS TM Power-MOSFET
BSB13NE2LXI OptiMOS TM Power-MOSFET Features Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (
OptiMOS TM Power-MOSFET
BSC16N6NS OptiMOS TM Power-MOSFET Features Optimized for synchronous rectification 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target applications Pb-free
IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
OptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
OptiMOS TM Power-MOSFET
BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel
IXFK360N15T2 IXFX360N15T2
GigaMOS TM TrenchT2 HiperFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK36N15T2 IXFX36N15T2 V DSS = 15V I D25 = 36A R DS(on) 4.m t rr 15ns TO-264 (IXFK) Symbol
CAS300M12BM2 1.2kV, 5.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
CAS3M12BM2 1.2kV, 5. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A R DS(on) 1.2 kv 12. mj 5. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse
SMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units
SMPS IGBT PD - 94625B IRGP5B6PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
Chip Outline. Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 12.5 V GS = 20 V, T C = 100 C.
V DS 12 V CPM2-12-16B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Chip Outline I D @ 2 C R DS(on) 19 A 16 mω New C2M SiC MOSFET technlogy High Blocking Voltage
OptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
OptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
OptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
AON V N-Channel SRFET
AON679 3V NChannel SRFET General Description Trench Power αmos Technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON)
SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.
Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature
Package. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C.
C3M29D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 11.5 A 2 mω C3M SiC MOSFET technology High blocking voltage with low
OptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
IXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V
2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
IXBT24N170 IXBH24N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBT24N17 IXBH24N17 S 11 = 1 = 24A (sat) 2. TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 17 V V CGR = 25 C
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTPN7T IXTYN7T S = 7 V I D = A R DS(on) 9. mω N-Channel Enhancement Mode Avalanche Rated TO-22 (IXTP) G D S D (TAB) Symbol Test Conditions Maximum
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified
2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary