Scharfetter Gummel Schemes for Non-Boltzmann Statistics

Size: px
Start display at page:

Download "Scharfetter Gummel Schemes for Non-Boltzmann Statistics"

Transcription

1 Scharfetter Gummel Schemes for Non-Boltzmann Statistics Patricio Farrell Weierstrass Institute (WIAS) Joint work with: T. oprucki, J. Fuhrmann, N. Rotundo, H. Doan ECMI 2016

2 Numerical methods for interesting physics Boltzmann Blakemore Fermi-Dirac e 1 e + 1 ( +1) 1R 0 E 1+e (E ) de 8 6 F( ) η

3 Numerical methods for interesting physics Boltzmann Blakemore Fermi-Dirac e 1 e + 1 ( +1) 1R 0 E 1+e (E ) de 8 6 F( ) Physics and numerics easy η

4 Numerical methods for interesting physics Boltzmann Blakemore Fermi-Dirac e 1 e + 1 ( +1) 1R 0 E 1+e (E ) de 8 6 F( ) Physics and numerics easy 4 2 Physics and numerics complex η

5 Outline semiconductor equations (arb. distribution function) and their discretisation discuss three numerical flux approximations assess quality by looking at a benchmark

6 Semiconductor Equations (van Roosbroeck) For the electrostatic potential, electron and hole densities r ("r ) =q(c + p n) 1 n t q r j n = R(n, p) p t + 1 q r j p = R(n, p)

7 Semiconductor Equations (van Roosbroeck) For the electrostatic potential, electron and hole densities r ("r ) =q(c + p n) 1 n t q r j n = R(n, p) p t + 1 q r j p = R(n, p) = change in mass flow through boundary

8 Relationships Currents Chemical potentials Diffusion and mobility

9 Relationships Currents j n = qµ n nr + qd n rn and j p = qµ p pr qd p rp Chemical potentials Diffusion and mobility

10 Relationships Currents j n = qµ n nr {z } advection + qd n rn {z } di usion and j p = qµ p pr {z } advection qd p rp {z } di usion Chemical potentials Diffusion and mobility

11 Relationships Currents j n = qµ n nr + qd n rn and j p = qµ p pr qd p rp n = N c F Chemical potentials q( 'n )+E ref E c q( 'p )+E ref E v and p = N v F k B T k B T Diffusion and mobility

12 Relationships Currents j n = qµ n nr + qd n rn and j p = qµ p pr qd p rp Chemical potentials n = N c F( n ) and p = N v F( p ) Diffusion and mobility

13 Relationships Currents j n = qµ n nr + qd n rn and j p = qµ p pr qd p rp Chemical potentials n = N c F( n ) and p = N v F( p ) D n µ n U T = n N c (F 1 ) 0 Diffusion and mobility n and N c D p µ p U T = p N v (F 1 ) 0 p N v

14 Relationships Currents j n = qµ n nr + qd n rn and j p = qµ p pr qd p rp Chemical potentials n = N c F( n ) and p = N v F( p ) D n µ n U T = g Diffusion and mobility n and N c D p µ p U T = g p N v

15 Relationships j n = qµ n nr U T g n N c Currents rn and j p = qµ p pr + U T g p N v rp Chemical potentials n = N c F( n ) and p = N v F( p ) D n µ n U T = g Diffusion and mobility n and N c D p µ p U T = g p N v

16 Relationships Currents j n = qµ n nr' n and j p = qµ p pr' p Chemical potentials n = N c F( n ) and p = N v F( p ) D n µ n U T = g Diffusion and mobility n and N c D p µ p U T = g p N v

17 Relationships Currents j n = qµ n nr' n and j p = qµ p pr' p Chemical potentials drift and diffusion quasi Fermi potential n = N c F( n ) and p = N v F( p ) D n µ n U T = g Diffusion and mobility n and N c D p µ p U T = g p N v

18 Relationships Currents j n = qµ n nr' n and j p = qµ p pr' p Chemical potentials drift and diffusion quasi Fermi potential n = N c F( n ) and p = N v F( p ) densities chemical potentials D n µ n U T = g Diffusion and mobility n and N c D p µ p U T = g p N v

19 Relationships Currents j n = qµ n nr' n and j p = qµ p pr' p Chemical potentials drift and diffusion quasi Fermi potential n = N c F( n ) and p = N v F( p ) densities chemical potentials D n µ n U T = g Diffusion and mobility n and N c D p µ p U T = g p N v nonlinear

20 Voronoi Cells

21 Voronoi Cells Flux along 1D edge x x L L

22 Finite Volume Discretisation r ("r )+q(c + p n 1 q r j n + R(n, p + 1 q r j p + R(n, p) =0

23 Finite Volume @t Z Z r ("r )dx + q 1 ndx q pdx + 1 q Z Z r j n dx + r j p dx + (C + p n)dx =0 Z Z R(n, p)dx =0 R(n, p)dx =0

24 Finite Volume @t Z Z r ("r )dx + q 1 ndx q pdx + 1 q Z Z r j n dx + r j p dx + (C + p n)dx =0 Z Z R(n, p)dx =0 R(n, p)dx =0

25 Finite Volume Discretisation Z r ("r )dx + q (C + p n p + 1 q Z Z r j n dx + R(n,p )=0 r j p dx + R(n,p )=0

26 Finite Volume Discretisation Z r ("r )dx + q (C + p n p + 1 q Z Z r j n dx + R(n,p )=0 r j p dx + R(n,p )=0 x x L L

27 Finite Volume @t n p + 1 q n ("r )ds + q (C + p n )=0 n j n ds + R(n,p )=0 n j p ds + R(n,p )=0 x x L L

28 Finite Volume Discretisation X L (x L x ) ("r )+q (C + p n n p + 1 q X L j n,l + R(n,p )=0 L2N() X L j p,l + R(n,p )=0 L2N() x x L L

29 Finite Volume Discretisation X L (x L x ) ("r )+q (C + p n n p + 1 q X L j n,l + R(n,p )=0 L2N() X L j p,l + R(n,p )=0 L2N() x x L L

30 How to choose the fluxes? Desired properties: stable preservation of max principle approximate boundary layers well consistency with thermodynamic equilibrium

31 Consistency with equilibrium Zero current leads to 0 = r U T r n

32 Consistency with equilibrium Zero current leads to 0 = r U T r n Mimic this numerically via with 0= U T n = L and = L

33 Consistency with equilibrium Zero current leads to 0 = r U T r n Mimic this numerically via Important for coupling! with 0= U T n = L and = L

34 Finite Volume Discretisation X L (x L x ) ("r )+q (C + p n n p + 1 q X L j n,l + R(n,p )=0 L2N() X L j p,l + R(n,p )=0 L2N() constant!

35 How to choose the fluxes? Scharfetter & Gummel (1969) for Boltzmann statistics: d dx j n,l =0 with n(x )=n n(x L )=n L

36 How to choose the fluxes? Scharfetter & Gummel (1969) for Boltzmann statistics: d dx j n = d dx qµ U T d dx n n d dx =0 with n(x )=n n(x L )=n L

37 How to choose the fluxes? Scharfetter & Gummel (1969) for Boltzmann statistics: d dx j n = d dx qµ U T d dx n n d dx =0 with n(x )=n n(x L )=n L leads to exact solution j = qµu T "B L U T n L B L U T n #,

38 How to choose the fluxes? Scharfetter & Gummel (1969) for Boltzmann statistics: d dx j n = d dx qµ U T d dx n n d dx =0 with n(x )=n n(x L )=n L leads to exact solution j = qµu T "B L U T n L B L U T n #, B(x) := x e x 1 B(x) Bernoulli function

39 How to choose the fluxes? Scharfetter & Gummel (1969) for Boltzmann statistics: d dx j n = d dx qµ U T d dx n n d dx =0 with n(x )=n n(x L )=n L leads to exact solution j = qµu T "B L U T n L B L U T n #, B(x) := x e x 1 Exact solution for Boltzmann statistics! What about other? F 0.5 B(x) Bernoulli function

40 How to choose the fluxes? Scharfetter & Gummel (1969) for Boltzmann statistics: d dx j n = d dx qµ U T d dx n n d dx =0 with n(x )=n n(x L )=n L leads to exact solution j = qµu T "B L U T n L B L U T n #, B(x) B(x) := x e x 1 Bernoulli function Exact solution for Boltzmann statistics! What about other? F Three flux approx. for Blakemore!

41 General Scharfetter-Gummel oprucki/gärtner (2013): d dx j n = d dx qµ U T g n N c d dx n n d dx =0 with n(x )=n n(x L )=n L

42 General Scharfetter-Gummel oprucki/gärtner (2013): d dx j n = d dx qµ U T g n N c d dx n n d dx =0 with n(x )=n n(x L )=n L Exact solution for Blakemore j = j 0 ng nl N C B L U T + j nl j 0 N C g n N C B L U T o j n j 0 NC with g(x) = x(f 1 ) 0 (x) = 1 1 x and j 0 = qµn C U T

43 General Scharfetter-Gummel oprucki/gärtner (2013): d dx j n = d dx qµ U T g n N c d dx n n d dx =0 with n(x )=n n(x L )=n L Exact solution for Blakemore j = j 0 ng nl N C B L U T + j nl j 0 N C g n N C B fixed point equation exact (up to machine precision) L U T o j n j 0 NC with g(x) = x(f 1 ) 0 (x) = 1 1 x and j 0 = qµn C U T

44 Diffusion averaging Bessemoulin-Chatard (2012) and oprucki et al. (2014): d dx j n = d dx qµ U T g n N c d dx n n d dx =0 with n(x )=n n(x L )=n L

45 Diffusion averaging Bessemoulin-Chatard (2012) and oprucki et al. (2014): "B j = qµu T ḡ L L n U T ḡ L B L U T ḡ L n L #

46 Diffusion averaging Bessemoulin-Chatard (2012) and oprucki et al. (2014): "B j = qµu T ḡ L L n U T ḡ L B L U T ḡ L n L # where ḡ L = F 1 nl N c F 1 n Nc log(n L /N c ) log(n /N c ) only consistent average! approximates g(x) =x(f 1 ) 0 (x) = (F 1 ) 0 (x) log 0 (x)

47 Inverse Activity Coefficients Fuhrmann (2015): d dx j n = d qµn c dx ( )e d dx ' n =0 with (x )= (x L )= L with ( ) = F( ) e leads to

48 Inverse Activity Coefficients Fuhrmann (2015): d dx j n = d qµn c dx ( )e d dx ' n =0 with (x )= (x L )= L with ( ) = F( ) e leads to j = qµu T N c L e L B L U T e k B L U T

49 Inverse Activity Coefficients Fuhrmann (2015): d dx j n = d qµn c dx ( )e d dx ' n =0 with (x )= (x L )= L with ( ) = F( ) e leads to j = qµu T N c L e L B L U T e k B consistent for any average! L U T where L = ( )+ ( L ) 2 2 [ ( ), ( L )]

50 Compare three schemes General Scharfetter-Gummel j GENSG = j 0 e L B L + j j 0 e B L j j 0 Diffusion enhanced Scharfetter-Gummel j DESG = j 0 g L F( L )B L g L F( )B L g L Inverse activity based scheme j IACT = j 0 L ne L B ( L ) e B ( L ) o

51 How to design a benchmark? Leave equilibrium! ' L = L + L r' = r + r

52 How to design a benchmark? Leave equilibrium! ' L = L + L r' = r + r h L L (linear potential) coarse grid large bias

53 How to design a benchmark? Leave equilibrium! ' L = L + L r' = r + r large contrast with opposite sign h L L (linear potential) coarse grid large bias = F 1 (n) large density contrast

54 Errors between schemes diffusion enhanced vs general SG inverse act. vs general SG

55 Errors between schemes L = L diffusion enhanced vs general SG inverse act. vs general SG

56 Errors between schemes L = L same contour line diffusion enhanced vs general SG inverse act. vs general SG

57 Errors between schemes diffusion enhanced vs general SG inverse act. vs general SG

58 pin N I =0.00/cm 3 N A = /cm 3 N D = /cm 3 0.5µm 2µm 2µm 2µm How do schemes influence current and electrostatic potential?

59 IV curves current [A] refinement level: 1 reference solution diffusion enhanced SG generalized SG inverse activities max error current [A] 1x10-2 1x10-3 1x10-4 1x10-5 1x10-6 1x10-7 max errors IV curves h 2 diffusion enhanced SG generalized SG inverse activities bias [V] h

60 Results three thermodynamically consistent schemes (Blakemore) all schemes converge to SG for large negative pin benchmark useful to discriminate accuracy exact scheme yields best current approximation; diffusion enhanced scheme good for electrostatic field other factors: computation times need to be considered

61 Outlook prototype: ddfermi moderately-sized 2D/3D problems different variables: heterostructure we welcome applications!

62 Muchas gracias por su atención! Thank you for your attention!

Weierstraß-Institut. für Angewandte Analysis und Stochastik. Leibniz-Institut im Forschungsverbund Berlin e. V. Preprint ISSN

Weierstraß-Institut. für Angewandte Analysis und Stochastik. Leibniz-Institut im Forschungsverbund Berlin e. V. Preprint ISSN Weierstraß-Institut für Angewandte Analysis und Stochastik Leibniz-Institut im Forschungsverbund Berlin e. V. Preprint ISSN 2198-5855 Numerical simulation of carrier transport in semiconductor devices

More information

Investigation of tunneling effects modeling in degenerate semiconductors

Investigation of tunneling effects modeling in degenerate semiconductors Journal of Materials and Environmental Sciences ISSN : 08-508 Copyright 017, University of Mohammed 1er Oujda Morocco JMES, 017 Volume 8, Issue 3, Page 809-815 http://www.jmaterenvironsci.com ICMES016,

More information

Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001

Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2001 Lecture 8-1 Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001 Contents: 1. Non-uniformly doped semiconductor in thermal equilibrium

More information

Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, Non-uniformly doped semiconductor in thermal equilibrium

Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, Non-uniformly doped semiconductor in thermal equilibrium 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 7-1 Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, 2007 Contents: 1. Non-uniformly doped semiconductor in thermal equilibrium

More information

ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE)

ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor

More information

ECE 340 Lecture 21 : P-N Junction II Class Outline:

ECE 340 Lecture 21 : P-N Junction II Class Outline: ECE 340 Lecture 21 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition

More information

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back

More information

ECE-305: Spring 2018 Exam 2 Review

ECE-305: Spring 2018 Exam 2 Review ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,

More information

Lecture 9 - Carrier Drift and Diffusion (cont.), Carrier Flow. September 24, 2001

Lecture 9 - Carrier Drift and Diffusion (cont.), Carrier Flow. September 24, 2001 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2001 Lecture 9-1 Lecture 9 - Carrier Drift and Diffusion (cont.), Carrier Flow September 24, 2001 Contents: 1. Quasi-Fermi levels 2. Continuity

More information

DRIFT-DIFFUSION SYSTEMS: VARIATIONAL PRINCIPLES AND FIXED POINT MAPS FOR STEADY STATE SEMICONDUCTOR MODELS

DRIFT-DIFFUSION SYSTEMS: VARIATIONAL PRINCIPLES AND FIXED POINT MAPS FOR STEADY STATE SEMICONDUCTOR MODELS DRIFT-DIFFUSION SYSTEMS: VARIATIONAL PRINCIPLES AND FIXED POINT MAPS FOR STEADY STATE SEMICONDUCTOR MODELS Joseph W. Jerome Department of Mathematics Northwestern University Evanston, IL 60208 Abstract

More information

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005

More information

Carrier transport: Drift and Diffusion

Carrier transport: Drift and Diffusion . Carrier transport: Drift and INEL 5209 - Solid State Devices - Spring 2012 Manuel Toledo April 10, 2012 Manuel Toledo Transport 1/ 32 Outline...1 Drift Drift current Mobility Resistivity Resistance Hall

More information

Semiconductor Junctions

Semiconductor Junctions 8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss

More information

ECE 440 Lecture 12 : Diffusion of Carriers Class Outline:

ECE 440 Lecture 12 : Diffusion of Carriers Class Outline: ECE 440 Lecture 12 : Diffusion of Carriers Class Outline: Band Bending Diffusion Processes Diffusion and Drift of Carriers Things you should know when you leave Key Questions How do I calculate kinetic

More information

PHYS208 p-n junction. January 15, 2010

PHYS208 p-n junction. January 15, 2010 1 PHYS208 p-n junction January 15, 2010 List of topics (1) Density of states Fermi-Dirac distribution Law of mass action Doped semiconductors Dopinglevel p-n-junctions 1 Intrinsic semiconductors List of

More information

Semiconductor Device Physics

Semiconductor Device Physics 1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle

More information

Lecture 8 - Carrier Drift and Diffusion (cont.), Carrier Flow. February 21, 2007

Lecture 8 - Carrier Drift and Diffusion (cont.), Carrier Flow. February 21, 2007 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 8-1 Lecture 8 - Carrier Drift and Diffusion (cont.), Carrier Flow February 21, 2007 Contents: 1. Quasi-Fermi levels 2. Continuity

More information

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium. February 13, 2003

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium. February 13, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium February 13, 2003

More information

Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.)

Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Outline 1. Overview of MOS electrostatics under bias 2. Depletion regime 3. Flatband 4. Accumulation regime

More information

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1 Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode

More information

Advanced Simulation Methods for Charge Transport in OLEDs

Advanced Simulation Methods for Charge Transport in OLEDs FLUXiM Advanced Simulation Methods for Charge Transport in OLEDs Evelyne Knapp, B. Ruhstaller Overview 1. Introduction 2. Physical Models 3. Numerical Methods 4. Outlook www.icp.zhaw.ch ICP Team Interdisciplinary

More information

ECE-305: Spring Carrier Action: II. Pierret, Semiconductor Device Fundamentals (SDF) pp

ECE-305: Spring Carrier Action: II. Pierret, Semiconductor Device Fundamentals (SDF) pp ECE-305: Spring 015 Carrier Action: II Pierret, Semiconductor Device Fundamentals (SDF) pp. 89-104 Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA

More information

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics

More information

( )! N D ( x) ) and equilibrium

( )! N D ( x) ) and equilibrium ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,

More information

Thermionic emission vs. drift-diffusion vs. p-n junction

Thermionic emission vs. drift-diffusion vs. p-n junction 6.772/SMA5111 - Compound Semiconductors Lecture 4 - Carrier flow in heterojunctions - Outline A look at current models for m-s junctions (old business) Thermionic emission vs. drift-diffusion vs. p-n junction

More information

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013 Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance

More information

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur

More information

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it. Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

More information

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline:

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: Depletion Approximation Step Junction Things you should know when you leave Key Questions What is the space charge region? What are the

More information

Solid Thermodynamics (1)

Solid Thermodynamics (1) Solid Thermodynamics (1) Class notes based on MIT OCW by KAN K.A.Nelson and MB M.Bawendi Statistical Mechanics 2 1. Mathematics 1.1. Permutation: - Distinguishable balls (numbers on the surface of the

More information

n N D n p = n i p N A

n N D n p = n i p N A Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped

More information

On p(x)-laplace thermistor models describing electrothermal feedback in organic semiconductor devices

On p(x)-laplace thermistor models describing electrothermal feedback in organic semiconductor devices Weierstrass Institute for Applied Analysis and Stochastics On p(x)-laplace thermistor models describing electrothermal feedback in organic semiconductor devices Matthias Liero joint work with Annegret

More information

Lecture 3 Semiconductor Physics (II) Carrier Transport

Lecture 3 Semiconductor Physics (II) Carrier Transport Lecture 3 Semiconductor Physics (II) Carrier Transport Thermal Motion Carrier Drift Carrier Diffusion Outline Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.4-2.6 6.012 Spring 2009 Lecture 3 1

More information

Effect of non-uniform distribution of electric field on diffusedquantum well lasers

Effect of non-uniform distribution of electric field on diffusedquantum well lasers Title Effect of non-uniform distribution of electric field on diffusedquantum well lasers Author(s) Man, WM; Yu, SF Citation IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation

More information

Advanced Compact Models for MOSFETs

Advanced Compact Models for MOSFETs Advanced Compact Models for MOSFETs Christian Enz, Carlos Galup-Montoro, Gennady Gildenblat, Chenming Hu, Ronald van Langevelde, Mitiko Miura-Mattausch, Rafael Rios, Chih-Tang (Tom) Sah Josef Watts (editor)

More information

Simulating Temperature Effects in Multi-dimensional Silicon Devices with Generalized Boundary Conditions

Simulating Temperature Effects in Multi-dimensional Silicon Devices with Generalized Boundary Conditions SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 4 Edited by W.Fichtner,D.Aemmcr - Zurich (Switzerland) September 12-14,1991 - Hartung-Gorre Simulating Temperature Effects in Multi-dimensional Silicon

More information

PN Junction and MOS structure

PN Junction and MOS structure PN Junction and MOS structure Basic electrostatic equations We will use simple one-dimensional electrostatic equations to develop insight and basic understanding of how semiconductor devices operate Gauss's

More information

Electrical Transport. Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8

Electrical Transport. Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8 Electrical Transport Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8 Electrical Transport The study of the transport of electrons & holes (in semiconductors) under various conditions. A broad & somewhat specialized

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3

More information

Simulating Hydrogen Transport and Single-Event Transients. Mark E. Law Dan Cummings, Nicole Rowsey And a Host of Collaborators

Simulating Hydrogen Transport and Single-Event Transients. Mark E. Law Dan Cummings, Nicole Rowsey And a Host of Collaborators Simulating Hydrogen Transport and Single-Event Transients Mark E. Law Dan Cummings icole Rowsey And a Host of Collaborators Objectives and Outline Provide device simulation environment for rad-hard applications

More information

Mark Lundstrom 2/10/2013. SOLUTIONS: ECE 606 Homework Week 5 Mark Lundstrom Purdue University (corrected 3/26/13)

Mark Lundstrom 2/10/2013. SOLUTIONS: ECE 606 Homework Week 5 Mark Lundstrom Purdue University (corrected 3/26/13) SOLUIONS: ECE 606 Homework Week 5 Mark Lundstrom Purdue University corrected 6/13) Some of the problems below are taken/adapted from Chapter 4 in Advanced Semiconductor Fundamentals, nd. Ed. By R.F. Pierret.

More information

Effective masses in semiconductors

Effective masses in semiconductors Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse

More information

Towards a Scalable EKV Compact Model Including Ballistic and Quasi-Ballistic Transport

Towards a Scalable EKV Compact Model Including Ballistic and Quasi-Ballistic Transport 2011 Workshop on Compact Modeling Towards a Scalable EKV Compact Model Including Ballistic and Quasi-Ballistic Transport Christian Enz 1,2, A. Mangla 2 and J.-M. Sallese 2 1) Swiss Center for Electronics

More information

ECE 440 Lecture 28 : P-N Junction II Class Outline:

ECE 440 Lecture 28 : P-N Junction II Class Outline: ECE 440 Lecture 28 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition

More information

Getting J e (x), J h (x), E(x), and p'(x), knowing n'(x) Solving the diffusion equation for n'(x) (using p-type example)

Getting J e (x), J h (x), E(x), and p'(x), knowing n'(x) Solving the diffusion equation for n'(x) (using p-type example) 6.012 - Electronic Devices and Circuits Lecture 4 - Non-uniform Injection (Flow) Problems - Outline Announcements Handouts - 1. Lecture Outline and Summary; 2. Thermoelectrics Review Thermoelectricity:

More information

Lecture 10 - Carrier Flow (cont.) February 28, 2007

Lecture 10 - Carrier Flow (cont.) February 28, 2007 6.720J/3.43J Integrated Microelectronic Devices - Spring 2007 Lecture 10-1 Lecture 10 - Carrier Flow (cont.) February 28, 2007 Contents: 1. Minority-carrier type situations Reading assignment: del Alamo,

More information

Charge Carriers in Semiconductor

Charge Carriers in Semiconductor Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information

The Meaning of Fermi-Level And Related Concepts (Like Band-Bending)

The Meaning of Fermi-Level And Related Concepts (Like Band-Bending) The Meaning of Fermi-Level And Related Concepts (Like Band-Bending) Martin Peckerar January 14, 2003 The Fermi level is a term derived from statistical mechanics and used to calculate the number of mobile

More information

Lecture 2. OUTLINE Basic Semiconductor Physics (cont d) PN Junction Diodes. Reading: Chapter Carrier drift and diffusion

Lecture 2. OUTLINE Basic Semiconductor Physics (cont d) PN Junction Diodes. Reading: Chapter Carrier drift and diffusion Lecture 2 OUTLIE Basic Semiconductor Physics (cont d) Carrier drift and diffusion P unction Diodes Electrostatics Caacitance Reading: Chater 2.1 2.2 EE105 Sring 2008 Lecture 1, 2, Slide 1 Prof. Wu, UC

More information

Lecture 3: Transistor as an thermonic switch

Lecture 3: Transistor as an thermonic switch Lecture 3: Transistor as an thermonic switch 2016-01-21 Lecture 3, High Speed Devices 2016 1 Lecture 3: Transistors as an thermionic switch Reading Guide: 54-57 in Jena Transistor metrics Reservoir equilibrium

More information

6.730 Physics for Solid State Applications

6.730 Physics for Solid State Applications 6.730 Physics for Solid State Applications Lecture 25: Chemical Potential and Equilibrium Outline Microstates and Counting System and Reservoir Microstates Constants in Equilibrium Temperature & Chemical

More information

The Role of doping in the window layer on Performance of a InP Solar Cells USING AMPS-1D

The Role of doping in the window layer on Performance of a InP Solar Cells USING AMPS-1D IOSR Journal of Engineering (IOSRJEN) ISSN: 2250-3021 Volume 2, Issue 8(August 2012), PP 42-46 The Role of doping in the window layer on Performance of a InP Solar Cells USING AMPS-1D Dennai Benmoussa

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

Uniform excitation: applied field and optical generation. Non-uniform doping/excitation: diffusion, continuity

Uniform excitation: applied field and optical generation. Non-uniform doping/excitation: diffusion, continuity 6.012 - Electronic Devices and Circuits Lecture 2 - Uniform Excitation; Non-uniform conditions Announcements Review Carrier concentrations in TE given the doping level What happens above and below room

More information

Plasma Modeling with COMSOL Multiphysics

Plasma Modeling with COMSOL Multiphysics Plasma Modeling with COMSOL Multiphysics Copyright 2014 COMSOL. Any of the images, text, and equations here may be copied and modified for your own internal use. All trademarks are the property of their

More information

Lecture 7. Drift and Diffusion Currents. Reading: Pierret

Lecture 7. Drift and Diffusion Currents. Reading: Pierret Lecture 7 Drift and Diffusion Currents Reading: Pierret 3.1-3.2 Ways Carriers (electrons and holes) can change concentrations Current Flow: Drift: charged article motion in resonse to an electric field.

More information

Review 5 unknowns: n(x,t), p(x,t), J e. Doping profile problems Electrostatic potential Poisson's equation. (x,t), J h

Review 5 unknowns: n(x,t), p(x,t), J e. Doping profile problems Electrostatic potential Poisson's equation. (x,t), J h 6.012 - Electronic Devices and Circuits Lecture 3 - Solving The Five Equations - Outline Announcements Handouts - 1. Lecture; 2. Photoconductivity; 3. Solving the 5 eqs. See website for Items 2 and 3.

More information

97.398*, Physical Electronics, Lecture 8. Diode Operation

97.398*, Physical Electronics, Lecture 8. Diode Operation 97.398*, Physical Electronics, Lecture 8 Diode Oeration Lecture Outline Have looked at basic diode rocessing and structures Goal is now to understand and model the behavior of the device under bias First

More information

Metal Semiconductor Contacts

Metal Semiconductor Contacts Metal Semiconductor Contacts The investigation of rectification in metal-semiconductor contacts was first described by Braun [33-35], who discovered in 1874 the asymmetric nature of electrical conduction

More information

Basic Ingradients in Device Simulation

Basic Ingradients in Device Simulation Basic Ingradients in Device Simulation Device Simulation and Characterization Boundary conditions Initial guess Models Mobility Recomb. Lifetime PDE s DD, EB, LT Analysis DC, AC, Transient Impact ionization

More information

Drift diffusion simulation of organic semiconducting devices

Drift diffusion simulation of organic semiconducting devices Bachelor Research Project Drift diffusion simulation of organic semiconducting devices J.A. Postma July 2014 Supervisors: Dr. R.W.A. Havenith N.J. van der Kaap Dr. L.J.A. Koster Abstract This report contains

More information

SEMICONDUCTOR PHYSICS REVIEW BONDS,

SEMICONDUCTOR PHYSICS REVIEW BONDS, SEMICONDUCTOR PHYSICS REVIEW BONDS, BANDS, EFFECTIVE MASS, DRIFT, DIFFUSION, GENERATION, RECOMBINATION February 3, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles

More information

MOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA

MOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA MOS Transistors Prof. Krishna Saraswat Department of Electrical Engineering S Stanford, CA 94305 saraswat@stanford.edu 1 1930: Patent on the Field-Effect Transistor! Julius Lilienfeld filed a patent describing

More information

On the Numerics of 3D Kohn-Sham System

On the Numerics of 3D Kohn-Sham System On the of 3D Kohn-Sham System Weierstrass Institute for Applied Analysis and Stochastics Workshop: Mathematical Models for Transport in Macroscopic and Mesoscopic Systems, Feb. 2008 On the of 3D Kohn-Sham

More information

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)

More information

Electrical Resistance

Electrical Resistance Electrical Resistance I + V _ W Material with resistivity ρ t L Resistance R V I = L ρ Wt (Unit: ohms) where ρ is the electrical resistivity 1 Adding parts/billion to parts/thousand of dopants to pure

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

More information

Lecture contents. Metal-semiconductor contact

Lecture contents. Metal-semiconductor contact 1 Lecture contents Metal-semiconuctor contact Electrostatics: Full epletion approimation Electrostatics: Eact electrostatic solution Current Methos for barrier measurement Junctions: general approaches,

More information

Self-Consistent Drift-Diffusion Analysis of Intermediate Band Solar Cell (IBSC): Effect of Energetic Position of IB on Conversion Efficiency

Self-Consistent Drift-Diffusion Analysis of Intermediate Band Solar Cell (IBSC): Effect of Energetic Position of IB on Conversion Efficiency Self-onsistent Drift-Diffusion Analysis of ntermediate Band Solar ell (BS): Effect of Energetic Position of B on onversion Efficiency Katsuhisa Yoshida 1,, Yoshitaka Okada 1,, and Nobuyuki Sano 3 1 raduate

More information

Representation of Functions as Power Series

Representation of Functions as Power Series Representation of Functions as Power Series Philippe B. Laval KSU Today Philippe B. Laval (KSU) Functions as Power Series Today / Introduction In this section and the next, we develop several techniques

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Due to the quantum nature of electrons, one energy state can be occupied only by one electron.

Due to the quantum nature of electrons, one energy state can be occupied only by one electron. In crystalline solids, not all values of the electron energy are possible. The allowed intervals of energy are called allowed bands (shown as blue and chess-board blue). The forbidden intervals are called

More information

Charge cloud simulations, overview and very first results

Charge cloud simulations, overview and very first results W eierstraß -Institut für Angew andte Analysis und Stochastik K. Gärtner Charge cloud simulations, overview and very first results SRH generation 6M pairs, 7.5ns Berlin, July 28, 2008 charge cloud sim.

More information

Technology Computer Aided Design (TCAD) Laboratory. Lecture 2, A simulation primer

Technology Computer Aided Design (TCAD) Laboratory. Lecture 2, A simulation primer Technology Computer Aided Design (TCAD) Laboratory Lecture 2, A simulation primer [Source: Synopsys] Giovanni Betti Beneventi E-mail: gbbeneventi@arces.unibo.it ; giobettibeneventi@gmail.com Office: Engineering

More information

FYS3410 Condensed matter physics

FYS3410 Condensed matter physics FYS3410 Condensed matter physics Lecture 23 and 24: pn-junctions and electrooptics Randi Haakenaasen UniK/UiO Forsvarets forskningsinstitutt 11.05.2016 and 18.05.2016 Outline Why pn-junctions are important

More information

Gyrokinetic simulations of magnetic fusion plasmas

Gyrokinetic simulations of magnetic fusion plasmas Gyrokinetic simulations of magnetic fusion plasmas Tutorial 2 Virginie Grandgirard CEA/DSM/IRFM, Association Euratom-CEA, Cadarache, 13108 St Paul-lez-Durance, France. email: virginie.grandgirard@cea.fr

More information

Simulation of Quantum Cascade Lasers

Simulation of Quantum Cascade Lasers Lighting up the Semiconductor World Simulation of Quantum Cascade Lasers 2005-2010 Crosslight Software Inc. Lighting up the Semiconductor World A A Contents Microscopic rate equation approach Challenge

More information

Isolated atoms Hydrogen Energy Levels. Neuromorphic Engineering I. Solids Energy bands. Metals, semiconductors and insulators Energy bands

Isolated atoms Hydrogen Energy Levels. Neuromorphic Engineering I. Solids Energy bands. Metals, semiconductors and insulators Energy bands Isolated atoms Hydrogen Energy Levels Neuromorphic Engineering I INI-404 227-1033-00 Electron in atoms have quantized energy levels Material courtesy of Elisabetta Chicca Bielefeld University, Germany

More information

Basic Principles of Light Emission in Semiconductors

Basic Principles of Light Emission in Semiconductors Basic Principles of Light Emission in Semiconductors Class: Integrated Photonic Devices Time: Fri. 8:00am ~ 11:00am. Classroom: 資電 06 Lecturer: Prof. 李明昌 (Ming-Chang Lee) Model for Light Generation and

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

More information

Theory and applications of the Ion Beam Induced Charge (IBIC) technique

Theory and applications of the Ion Beam Induced Charge (IBIC) technique Università degli Studi di Torino Scuola di Dottorato in Scienza ed Alta Tecnologia Indirizzo di Fisica ed Astro9isica Ciclo XXV Theory and applications of the Ion Beam Induced Charge (IBIC) technique Candidate

More information

Session 6: Solid State Physics. Diode

Session 6: Solid State Physics. Diode Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

More information

Similarities and differences:

Similarities and differences: How does the system reach equilibrium? I./9 Chemical equilibrium I./ Equilibrium electrochemistry III./ Molecules in motion physical processes, non-reactive systems III./5-7 Reaction rate, mechanism, molecular

More information

Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005

Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005 6.12 Microelectronic Devices and Circuits Fall 25 Lecture 8 1 Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oide Semiconductor Structure (cont.) Contents: October 4, 25 1. Overview

More information

Lecture Notes 2 Charge-Coupled Devices (CCDs) Part I. Basic CCD Operation CCD Image Sensor Architectures Static and Dynamic Analysis

Lecture Notes 2 Charge-Coupled Devices (CCDs) Part I. Basic CCD Operation CCD Image Sensor Architectures Static and Dynamic Analysis Lecture Notes 2 Charge-Coupled Devices (CCDs) Part I Basic CCD Operation CCD Image Sensor Architectures Static and Dynamic Analysis Charge Well Capacity Buried channel CCD Transfer Efficiency Readout Speed

More information

Schottky diodes. JFETs - MESFETs - MODFETs

Schottky diodes. JFETs - MESFETs - MODFETs Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different

More information

exp Compared to the values obtained in Example 2.1, we can see that the intrinsic carrier concentration in Ge at T = 300 K is 2.

exp Compared to the values obtained in Example 2.1, we can see that the intrinsic carrier concentration in Ge at T = 300 K is 2. .1 (a) k =8.617 10 5 ev/k n i (T = 300 K) = 1.66 10 15 (300 K) 3/ 66 ev exp (8.617 10 5 ev/k) (300 K) =.465 10 13 cm 3 n i (T = 600 K) = 1.66 10 15 (600 K) 3/ 66 ev exp (8.617 10 5 ev/k) (600 K) = 4.14

More information

Devices. chapter Introduction. 1.2 Silicon Conductivity

Devices. chapter Introduction. 1.2 Silicon Conductivity chapter 1 Devices 1.1 Introduction The properties and performance of analog bicmos integrated circuits are dependent on the devices used to construct them. This chapter is a review of the operation of

More information

Simulation of statistical variability in nano-cmos transistors using drift-diffusion, Monte Carlo and non-equilibrium Green s function techniques

Simulation of statistical variability in nano-cmos transistors using drift-diffusion, Monte Carlo and non-equilibrium Green s function techniques J Comput Electron (2009) 8: 349 373 DOI 10.1007/s10825-009-0292-0 Simulation of statistical variability in nano-cmos transistors using drift-diffusion, Monte Carlo and non-equilibrium Green s function

More information

PN Junction. Ang M.S. October 8, Maxwell s Eqautions Review : Poisson s Equation for PNJ. Q encl S. E ds. σ = dq ds. ρdv = Q encl.

PN Junction. Ang M.S. October 8, Maxwell s Eqautions Review : Poisson s Equation for PNJ. Q encl S. E ds. σ = dq ds. ρdv = Q encl. PN Junction Ang M.S. October 8, 0 Reference Sedra / Smith, M icroelectronic Circuits Maxwell s Eqautions Review : Poisson s Equation for PNJ. Gauss Law for E field The total enclosed charge Q encl. insde

More information

Introduction to Optoelectronic Device Simulation by Joachim Piprek

Introduction to Optoelectronic Device Simulation by Joachim Piprek NUSOD 5 Tutorial MA Introduction to Optoelectronic Device Simulation by Joachim Piprek Outline:. Introduction: VCSEL Example. Electron Energy Bands 3. Drift-Diffusion Model 4. Thermal Model 5. Gain/Absorption

More information

Parallel Ensemble Monte Carlo for Device Simulation

Parallel Ensemble Monte Carlo for Device Simulation Workshop on High Performance Computing Activities in Singapore Dr Zhou Xing School of Electrical and Electronic Engineering Nanyang Technological University September 29, 1995 Outline Electronic transport

More information

Electric Field--Definition. Brownian motion and drift velocity

Electric Field--Definition. Brownian motion and drift velocity Electric Field--Definition Definition of electrostatic (electrical) potential, energy diagram and how to remember (visualize) relationships E x Electrons roll downhill (this is a definition ) Holes are

More information

Supplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm.

Supplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm. PL (normalized) Intensity (arb. u.) 1 1 8 7L-MoS 1L-MoS 6 4 37 38 39 4 41 4 Raman shift (cm -1 ) Supplementary Figure 1 Raman spectra of the Figure 1B at the 1L-MoS area (black line) and 7L-MoS area (red

More information

Solar Cell Physics: recombination and generation

Solar Cell Physics: recombination and generation NCN Summer School: July 2011 Solar Cell Physics: recombination and generation Prof. Mark Lundstrom lundstro@purdue.edu Electrical and Computer Engineering Purdue University West Lafayette, Indiana USA

More information

On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells

On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells Yuan He Irene M. Gamba Heung-Chan Lee Kui Ren arxiv:1511.417v1 [math.ap] 2 Nov 215 November 3, 215

More information

Supplementary Materials for

Supplementary Materials for advances.sciencemag.org/cgi/content/full/3/4/e1602726/dc1 Supplementary Materials for Selective control of electron and hole tunneling in 2D assembly This PDF file includes: Dongil Chu, Young Hee Lee,

More information