L19: Converter losses and cooling
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- Myron Ramsey
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1 L9: Converter losses and coolng L9: -APR-29 Outlook Power loss estmaton Swtchng losses Conductng losses Temperature estmaton Coolng crcuts Thermal crcuts Effcenc characterzaton of a converter 2-level 3-phase Voltage Source Inverter Lund Unverst / LTH / IEA / AR / EIEN25 /
2 We ll contnue from the prevous lecture Lund Unverst / LTH / IEA / AR / EIEN25 / SKM459GD2E4 IGBT 4 Trench Gate Technolog, solderless snter technolog,, pressure thermal contact, 6 short crcut capablt, Smbol V CES I C I F I Cnom =I Fnom Condtons =25 C, Λ paste =.-2.5 W/mK, s =7 C, =75 C, Values 2 V A A 45 A Lund Unverst / LTH / IEA / AR / EIEN25 /
3 Swtchng & component current U cd /2 T modulaton out - D voltage, u [V] current, [A] 5 T [A] 5 D [A] Lund Unverst / LTH / IEA / AR / EIEN25 / & Inverter losses Is on off off t Swtchng ccle and power loss estmaton condtons Snusodal dut as a functon of tme Voltage utlzaton or the degree of converter modulaton m=û out /(U dc /2) Phase shft φ between the fundamental of AC voltage and current Lund Unverst / LTH / IEA / AR / EIEN25 /
4 Forward characterstcs V ce ( ) temperature dependent threshold voltage of the transstor on-state characterstc r ce ( ) temperature dependent bulk resstance of the transstor on-state characterstc V F ( ) temperature dependent threshold voltage of the dode on-state characterstc r F ( ) temperature dependent bulk resstance of the dode onstate characterstc Lund Unverst / LTH / IEA / AR / EIEN25 / Swtchng energ losses Eon turn on energ dsspaton n the power transstor Eoff turn off energ dsspaton n the power transstor Err reverse recover energ dsspaton of the nverse dodes Lund Unverst / LTH / IEA / AR / EIEN25 / 29-4-
5 Power losses n Transstor T On-state conductng losses mcos P ˆ cnd. T VCE I 2 Energ losses due to swtchng P sw. T mcos 2 KV Iˆ V dc fsw E onoff I V TC Esw 3 Voltage dependenc of swtchng losses.3-.4 Î Ampltude of nverter output current I V Reference values of measured data K V TC Esw Temperature coeffcent of swtchng losses 3e-3 r CE Iˆ Lund Unverst / LTH / IEA / AR / EIEN25 / Power losses n Dode D On-state conductng losses P cnd. D 2 mcos Energ losses due to swtchng K V P sw. T mcos 2 V F Iˆ K I KV I V dc fsw E ˆ rr I V TC 3 Err Voltage dependenc of swtchng losses ~.6 K I Current dependenc of swtchng losses ~.6 Temperature coeffcent of swtchng losses 6e-3 TC Esw r F Iˆ Lund Unverst / LTH / IEA / AR / EIEN25 / 29-4-
6 Inverter load Construct machne based to control equatons T m L L u b b b ub A+ Im u u s m L L C- B- a a a Re ma 2 2 B+ C+ A- ua u u u ma u L s u u u m L uc c c c Lund Unverst / LTH / IEA / AR / EIEN25 / Machne characterstcs Crcle dagram and torque speed characterstc acceleratng current, I s [A] magnetsng current, I s [A] electromagnetc torque, T em [Nm] Ψ m =.4Vs, L =mh, L =2mH, Rs=mΩ, I=4A frequenc, f e [Hz] electromagnetc power, P em [kw] Lund Unverst / LTH / IEA / AR / EIEN25 /
7 Converter losses Lund Unverst / LTH / IEA / AR / EIEN25 / p Thermal crcut Heat flow Heat sources: losses n dodes and transstors Heat snk: natural but perabl forced convecton Thermal resstance: components and thermal connectons between them C d D Juncton R thdc Case (S) Thermal grease C c Heat snk t, end ( Rth P amb) ( e ), start C h Tr C t e t R tht c c R thch h R thh a amb Lund Unverst / LTH / IEA / AR / EIEN25 /
![2.4.6. 2 6..2.4.6. 2 4.6..2.4.6. 2 3 5 5 5 2 4 5 3 coolng power, p=c p Q( out - n ) [W] Renolds number, Re=2d h Q/(A) [-] 6 4 7 2 5 6 3 7 2.4.6..2.4.6 2 3 4 5 6 7.2.4.6..2.4 flow rate, Q [L/mn] 2 3 4 5 6 7.](/docs-images/96/128717694/images/8-1.jpg "2.4.6..2 flow rate, Q [L/mn] 2 3 4 5 6 7.2.4.6. flow rate, Q [L/mn] 2 3 4 5 6 7.2.4.6. flow rate, Q [L/mn] 2 3 4 5 6 7.2.4.6 flow rate, Q [L/mn] 2 3 4 5 6 7.2.4 2 flow rate, Q [L/mn] 3 4 5 6 7.")
8 7 7 Coolng crcut Lund Unverst / LTH / IEA / AR / EIEN25 / outlet temperature, out [C] channel heght, d [mm] channel heght, d [mm] channel heght, d [mm] channel heght, d [mm] channel heght, d [mm] channel heght, d [mm] channel heght, d [mm] Calculaton of coolng crcuts coolng power, p=c p Q( out - n ) [W] Renolds number, Re=2d h Q/(A) [-] flow rate, Q [L/mn] flow rate, Q [L/mn] flow rate, Q [L/mn] flow rate, Q [L/mn] flow rate, Q [L/mn] flow rate, Q [L/mn] flow rate, Q [L/mn] flow rate, Q [L/mn] Nusselts number, Nu=f(Re,Pr) [-] heat transfer coeffcent, h=nu k/d h [W/(m 2 K)] temperature drop across boundar laer, P cool /(ha cool ) [K)] pressure drop, dp [Pa] deal coolng suppl power, dpq [-] wndng temperature, T w =T out +P cool /(ha cool ) [C] Drvng parameters for coolng P=f( out,q) at n Flow (Re) and coolant (Pr) characterzaton Heat transfer correlatons (Nu) and coeffcent h Wall and wndng temperature Pressure across coolng channel Power for suppl Epected coolng power P=f( w,q) at n Lund Unverst / LTH / IEA / AR / EIEN25 /
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SKiM 93 Trench IGBT Modules SKiM429GD17E4HD Features IGBT 4 Trench Gate Technology Solderless sinter technology V CE(sat) with positive temperature coefficient Low inductance case Insulated by Al 2 O 3
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6
± 20 Transient Gate-to-Emitter Voltage
IRGSDPbF V CES = V INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE I C.A, T C = C C C t sc > µs, T jmax = 7 C V CE(on) typ..7v Applications Appliance Motor Drive Inverters SMPS Features
I C T c =25 C 373 A. T j = 175 C T c =80 C 293 A I Cnom 300 A I CRM I CRM = 3 x I Cnom 900 A V GES V. T c =80 C 282 A. I F T c =25 C 255 A
SEMiX 5 3-Level NPC IGBT-Module SEMiX305MLI07E4 Features Solderless assembling solution with PressFIT signal pins and screw power terminals IGBT 4 Trench Gate Technology V CE(sat) with positive temperature
IRGPC40UD2 UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE PD - 9.88A UltraFast opack IGBT Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
IRGP20B120UD-E. UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V
PD- 93817 IRGP2B12UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features UltraFast Non Punch Through (NPT) Technology Low Diode V F (1.67V Typical @ 2A
IRGB4B60K IRGS4B60K IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature
Estimating Delays. Gate Delay Model. Gate Delay. Effort Delay. Computing Logical Effort. Logical Effort
Estmatng Delas Would be nce to have a back of the envelope method for szng gates for speed Logcal Effort ook b Sutherland, Sproull, Harrs Chapter s on our web page Gate Dela Model Frst, normalze a model
D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7
MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the
Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED
MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:
n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF
IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square
IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES
4th-ersion MITSUBISHI HIGBT MODULES CM1DC-4N CM1DC-4N IC... 1 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT Soft Reverse Recovery Diode PPLICTION Traction drives, High
IRGP30B120KD-E. Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V
PD- 93818A IRGP3B12KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT Features Low V CE (on) Non Punch Through (NPT) Technology Low Diode V F (1.76V Typical
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance:
I C T c =25 C 407 A. T j = 175 C T c =80 C 376 A I Cnom 300 A I CRM I CRM = 3 x I Cnom 900 A V GES V. T c =80 C 312 A
SEMiX 5 3-Level TNPC IGBT-Module Engineering Sample SEMiX305TMLI17E4C Target Data Features Solderless assembling solution with PressFIT signal pins and screw power terminals IGBT 4 Trench Gate Technology
COLLEGE OF ENGINEERING PUTRAJAYA CAMPUS FINAL EXAMINATION SPECIAL SEMESTER 2013 / 2014
OLLEGE OF ENGNEENG PUTAJAYA AMPUS FNAL EXAMNATON SPEAL SEMESTE 03 / 04 POGAMME SUBJET ODE SUBJET : Bachelor of Electrcal & Electroncs Engneerng (Honours) Bachelor of Electrcal Power Engneerng (Honours)
Converter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW35-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 1600 CES = 600 CES = 600 I DM25 = 130 I C25 = 25 I C25 =
Not Recommend. for New Design CM35MX-24A. APPLICATION General purpose Inverters, Servo Amplifiers CM35MX-24A
CMMX- CMMX- PPLTION General purpose Inverters, Servo mplifiers OUTLINE DRWING & CIRCUIT DIGRM 11. 118.1 11 ±. 99 9. 8.. 11.66 1.8.1 6.9. 8..6 1 9 8 6 1 9 8 6 1.. 6 8 9 6 61.8 (.) 1.9 16.9 R(1~) S(~6) T(9~1)
Logic level TOPFET APPLICATIONS FUNCTIONAL BLOCK DIAGRAM PINNING - SOT404 PIN CONFIGURATION SYMBOL
DESCRPTON QUCK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNT overload protected logic level power MOSFET in a 3 pin plastic surface V DS Continuous drain source voltage V mount envelope,
Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH
MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.
Converter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW20-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper RRM = 1600 CES = 600 CES Three Phase Inverter = 600 I DM25 = 95 I C25 = 12 I C25 =
T s =25 C 18 A T s =70 C 18 A I Cnom 15 A I CRM I CRM = 3 x I Cnom 45 A V GES V V CC = 800 V. T s =25 C 23 A I C =15A
MiniSKiiP 1 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no. E63532 Typical Applications*
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High
Insulated Gate Bipolar Transistor (IGBT)
BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V
IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
Advanced Circuits Topics - Part 1 by Dr. Colton (Fall 2017)
Advanced rcuts Topcs - Part by Dr. olton (Fall 07) Part : Some thngs you should already know from Physcs 0 and 45 These are all thngs that you should have learned n Physcs 0 and/or 45. Ths secton s organzed
Symbol Parameter/Test Conditions Values Unit T C = T C =80 100
IGBT Module March 2 ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current Free
< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R
CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING
AUTOMOTIVE GRADE. Standard Pack
AUTOMOTIVE GRADE AUIRGPS47D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA 1% of the parts
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L.
AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
P-TO Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current
SPP7N6C3 SPI7N6C3, SP7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge I D 7.3 Periodic avalanche rated PGTOFP PGTO6
Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated
AUTOMOTIVE GRADE. Standard Pack
AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA % of the parts tested for
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA
CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,