AON V N-Channel MOSFET
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- Meredith Bradley
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1 AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D (at V GS =4.V).7A R DS(ON) (at V GS =4.V) < 7mΩ R DS(ON) (at V GS =.V) < 33mΩ R DS(ON) (at V GS =.8V) < 39mΩ Typical ESD protection HBM Class C DFN.x.6 Top View Bottom View D D G S G G,S S Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol Maximum DrainSource Voltage GateSource Voltage Continuous Drain T A = C.7 I Current E D T A =7 C. Junction and Storage Temperature Range T J, T STG to V DS V GS Pulsed Drain Current C.8 A I DM T A = C.9 P Power Dissipation A D W T A =7 C. Units V Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 8 C/W Maximum JunctiontoAmbient A R θja SteadyState 4 C/W Maximum JunctiontoAmbient B t s 4 C/W R θja Maximum JunctiontoAmbient B SteadyState 8 34 C/W ±8 V A C Rev.. : Oct. 6 Page of
2 AON66 Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V V I DSS V DS =V, V GS =V T J = C I GSS GateBody leakage current V DS =V, V GS =±8V ± µa V GS(th) Gate Threshold Voltage V DS =V GS, I D =µa.3.6. V I D(ON) On state drain current V GS =4.V, V DS =V.8 A R DS(ON) Zero Gate Voltage Drain Current Static DrainSource OnResistance V GS =4.V, I D =.4A V GS =.V, I D =.3A V GS =.8V, I D =.A V GS =.V, I D =.A 7 T J = C mω 3 39 mω 3 mω g FS Forward Transconductance V DS =V, I D =.4A S V SD Diode Forward Voltage I S =.4A,V GS =V.7. V I S Maximum BodyDiode Continuous Current E.7 A DYNAMIC PARAMETERS C iss Input Capacitance 6. pf C oss Output Capacitance V GS =V, V DS =V, f=mhz. pf C rss Reverse Transfer Capacitance 9 pf R g Gate resistance V GS =V, V DS =V, f=mhz. Ω SWITCHING PARAMETERS Q g Total Gate Charge.8 nc Q gs Gate Source Charge V GS =4.V, V DS =V, I D =.4A. nc Q gd Gate Drain Charge. nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V GS =4.V, V DS =V, R L =Ω, 4 ns t D(off) TurnOff DelayTime R GEN =3Ω 8 ns t f TurnOff Fall Time 8 ns A: The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. The Power dissipation P DSM is based on R θja and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design, and the maximum temperature of C may be used if the PCB allows it to. B. The value of R θja is measured with the device mounted on FR4 minimum pad board, in a still air environment with T A = C. The Power dissipation P DSM is based on R θja and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design, and the maximum temperature of C may be used if the PCB allows it to. C. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. D. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. The SOA curve provides a single pulse rating. E. The maximum current limited by package. µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.. : Oct. 6 Page of
3 AON66 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 4.V V. V DS =V..V.. V GS =.V. C C 3 4 V DS (Volts) Fig : OnRegion Characteristics (Note E)... 3 Figure : Transfer Characteristics (Note E) R DS(ON) (mω) V GS =.8V V GS =4.V V GS =.V V GS =.V Normalized OnResistance.6.4. V GS =.V I D =.3A V GS =.8V I D =.A V GS =.V I D =.A 7 V GS =4.V I D =.4A Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction 8Temperature (Note E) 6 I D =.4A.E R DS(ON) (mω) 4 3 C C I S (A).E 4.E.E.E3 C C.E Figure : OnResistance vs. GateSource Voltage (Note E).E V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev.. : Oct. 6 Page 3 of
4 AON66 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 V DS =V I D =.4A 8 C iss 3 Capacitance (pf) 6 4 C oss Q g (nc) Figure 7: GateCharge Characteristics C rss V DS (Volts) Figure 8: Capacitance Characteristics. µs µs 4 T J(Max) = C T A = C I D (Amps).. R DS(ON) limited T J(Max) = C T A = C µs ms ms DC Power (W) V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note B).... Pulse Width (s) Figure : Single Pulse Power Rating 8Junctionto Ambient (Note B) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =4 C/W Single Pulse 4 In descending order D=.,.3,.,.,.,., single pulse P D T on T. E.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note B) Rev.. : Oct. 6 Page 4 of
5 AON66 Gate Charge Test Circuit & Waveform Qg DUT V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms Rg DUT Vdd 9% % td(on) tr t d(off) tf t on t off Rev.. : Oct. 6 Page of
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
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