ECE 695 Numerical Simulations Lecture 15: Advanced Drift-Diffusion Simulations. Prof. Peter Bermel February 13, 2017
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1 ECE 695 Numerical Simulatios Lecture 15: Advaced Drift-Diffusio Simulatios Prof. Peter Bermel February 13, 2017
2 Outlie Drift Diffusio Model Physical Effects Setaurus Alicatios: Trasistor Modelig Itroductio of Tra States Effects of Radiatio Strikes 2/13/2017 ECE 695, Prof. Bermel 2
3 Drift-Diffusio Model: Physical Effects Physics Mobility Geeratio recombiatio ad traig Imact ioizatio Tuelig Oxide hysics Models Cocetratio-deedet mobility (fit to exerimetal data), Parallel field deedet mobility (fit to exerimetal saturatio velocities) Modified cocetratio deedet Shockley-Read-Hall Geeratio/recombiatio (for treatmet of defects) Selberherr s imact ioizatio model Bad-to-bad tuelig, Tra-Assisted tuelig Fowler-Nordheim tuellig, iterface charge accumulatio 2/13/2017 ECE 695, Prof. Bermel 3
4 Setaurus Workbech Ru commad: swb Grahical user iterface to uify all simulatio tools ito a sigle exerimet roject flow Used to orgaize rojects ad set u exerimets for both structure geeratio ad device simulatio Techology Comuter-Aided-Desig Tools Exerimet colum Parameter row 2/13/2017 ECE 695, Prof. Bermel 4
5 Ulockig Workbech Double click 20m-NMOS: the simulatio modules will show u o the work bech If you caot edit the value i the cell, the Right click 20m-NMOS roject ulock :This will ulock the roject for modificatio of values. Techology Comuter-Aided-Desig Tools Exerimet colum Parameter row 2/13/2017 ECE 695, Prof. Bermel 5
6 Setaurus Structure Editor Recommeded to ru i workbech Ru commad (uder utty): sde Structure Editor (1) geerates the device structure (icludig the doig rofiles) (2) Defies the electrical cotact ad (3) geerates the meshig for umerical simulatios. Parameters you may eed to chage/otimize for this roject Gate oxide thickess (Xo, Uits: um) MOSFET gate legth (Lgate, Uits: um) Sacer legth (Ls, Uits: um) Chael Doig Cocetratio (ChaDoig, Uits: cm -3 ) Source/Drai extesio deth (XjExt, Uits: um) 2/13/2017 ECE 695, Prof. Bermel 6
7 Setaurus Device Recommeded to ru i workbech Ru commad (uder utty): sdevice Setaurus Device simulates the device erformace by solvig multile, couled hysical equatios based o the meshig. Iuts: gate voltage (V gs ), drai voltage (V ds ), workfuctio value Commo Physical models: Si bad structure (E c/v, N c/v ad badga arrowig) Fermi-Dirac Statistics Poisso equatio, cotiuity equatio Bad-to-bad tuelig, R-G curret Drift-Diffusio curret, carrier mobility, velocity saturatio 2/13/2017 ECE 695, Prof. Bermel 7
8 Setaurus Isect Recommeded to ru i workbech Used to automatically extract critical device erformace arameters such as: Vt_li Id_li Vt_sat Id_sat I_OFF Also used to lot the I d -V g ad I d -V d curves 2/13/2017 ECE 695, Prof. Bermel 8
9 Simulatio Status Start Setaurus, first select from the left roject colum, right-click to rerocess. The you will fid the odes will dislay differet colors, suggestig they have differet roerties. Here is a summary. Oly colorful odes will give you the simulatio outut. Ready meas the curret tool is free of sytax errors (You should see this sice you are ot allowed to modify the scrits). Right-click a certai Ready odes to ru, after a short eriod of time, you will fid it chages to doe or failed. 2/13/2017 ECE 695, Prof. Bermel 9
10 Basic Oeratios for Setaurus Structure Editor Now you ca view your simulatio results if the odes are doe. Right-click the ode i Structure editor, select Visualize Teclot SV (Select File) ad choose msh.tdr file to view your device structure. 2/13/2017 ECE 695, Prof. Bermel 10
11 Basic Oeratios for Setaurus Teclot This slide hel you familiarize the usage of Setaurus Teclot, this tool is for the visualizatio ad rofiles/cotours extractio uroses. zoom-i tool dislay adjustmet Slice-cuttig Default uits: um 2/13/2017 ECE 695, Prof. Bermel 11
12 Exort the results from Teclot: To get the data field, first, use Y-cut to get the 1-D slice; the select exort Isect grah As a image (.bm) 2/13/2017 ECE 695, Prof. Bermel 12
13 The Isect will be started. Select the data field herei; Click File Exort txt file You ca read your saved data (.txt file) 2/13/2017 from your roject ECE 695, Prof. directory Bermel 13
14 Basic Oeratios for Setaurus Device Right-click the doe ode i Structure Device, select Visualize Teclot SV (Select File) ad choose des.tdr file to view your device erformace cotours (vector fields). Curret Desity Liear regio Saturatio regio 2/13/2017 ECE 695, Prof. Bermel 14
15 Device Termials Oututs Basic Oeratios for Setaurus Device Cot. d Right-click the doe ode i Structure Device, select Visualize Isect (Select File) ad choose IdVg_des.lt file to view your device erformace curves. drai: TotalCurret Choose Log Y or Liear Y here Most commo lot combiatio is gate: OuterVoltage Use cursors to read the data value alog the curve 2/13/2017 ECE 695, Prof. Bermel 15
16 I dsat, I li ad I OFF V ds =V DD I dsat V ds =20mV I li I OFF I OFF, I dsat ad I dli are extracted automatically V DD 2/13/2017 ECE 695, Prof. Bermel 16
17 Threshold Voltage (V t ) Costat curret defiitio of threshold voltage V th I t = 100A W/L gate W has default value of 1um for 2-dimesioal device simulatio V tli ad V tsat are extracted automatically 2/13/2017 ECE 695, Prof. Bermel 17
18 DIBL ad SS DIBL is defied as the threshold voltage differece divided by the drai bias betwee liear ad saturatio regio. Sub-threshold Swig 2/13/2017 ECE 695, Prof. Bermel 18
19 Geeratio/Recombiatio Modified Shockley-Read-Hall G/R A sum of SRH cotributio by each tra May be temerature, doig & field deedet Γ is the degeeracy of the tra, i the itrisic cocetratio of carriers R, R i R i t i ( e i ( Ef Ei) kt ) t 2 i i ( e i ( EiEf ) kt ) 2/13/2017 ECE 695, Prof. Bermel 19
20 Geeratio/Recombiatio Trasiet behaviour of tras hole cature hole emissio electro cature electro emissio dn dt dn dt td ta t v ( (1 F t v ( (1 F ta td ) F ) F ta td e e i i Ei Et kt Et Ei kt ) v ( F ) v ( F ta td (1 F (1 F ta td ) ) i i e e Et Ei kt Ei Et kt Electro Electro Hole Hole cature emissio cature emissio σ, is tra cature cross-sectio v, is thermal velocity 1 1 i is itrisic cocetratio F ta,td the robability of ioizatio trat trat N ta,td sace charge desity ECE 695, Prof. Bermel 20 2/13/2017 ) )
21 Radiatio damage No-ioizig Eergy loss D. Meichelli, M. Bruzzi, Z. Li, ad V. Eremi, Modellig of observed double-juctio effect, Nucl. Istrum. Meth. A, vol. 426, , Ar Ioizig Eergy loss F. Moscatelli et al., A ehaced aroach to umerical modelig of heavily irradiated silico devices, Nucl. Istrum. Meth. B, vol. 186, o. 1-4, , Ja F. Moscatelli et al., Comrehesive device simulatio modelig of heavily irradiated silico detectors at cryogeic temeratures, IEEE Tras. Nucl. Sci., vol. 51, o. 4, , Aug M. Petasecca, F. Moscatelli, D. Passeri, G. Pigatel, ad C. Scarello, Numerical simulatio of radiatio damage effects i -tye silico detectors, Nucl. Istrum. Meth. A, vol. 563, o. 1, , /13/2017 ECE 695, Prof. Bermel 21
22 Imact ioizatio 22 ECE 695, Prof. Bermel e e E B E B A A J E J E G b b a a a a ) ( ) ( ) ( ) ( Selberherr, S., "Aalysis ad Simulatio of Semicoductor Devices", Sriger-Verlag Wie New York, ISBN , /13/2017
23 Phoo-assisted tra-to-bad tuelig R i t 1 0 DIRAC ( e i ( Ef Ei) kt 2 i t ) 1 0 DIRAC e i ( ( EiEf ) kt Hurkx, G.A.M., D.B.M. Klaase, M.P.G. Kuvers, ad F.G. O Hara, A New Recombiatio Model Describig Heavy-Doig Effects ad Low Temerature Behaviour, IEDM Techical Digest(1989): /13/2017 ) DIRAC DIRAC E kt L E kt L E 3 ( uku 2 ) kt e e L E 3 ( uk u 2 ) kt L ECE 695, Prof. Bermel 23 du du K K m m 0 3q E 2m m 0 tuel tuel 3q E E E 3 3
24 Charge Deositio by a Radiatio Particle Radiatio articles - rotos, eutros, alha articles ad heavy ios Reverse biased - juctios are most sesitive to article strikes Charge is collected at the drai ode through drift ad diffusio Results i a voltage glitch at the drai ode System state may chage if this voltage glitch is catured by at least oe memory elemet This is called a SEU May cause system failure 2/13/2017 ECE 695, Prof. 24 Bermel S + -substrate G B _ ++ + _ + _ _ + Radiatio Particle + E E D VDD VDD - V j Deletio Regio
25 Radiatio Particle Strikes Radiatio article strike at the outut of INV1 Imlemeted usig 65m PTM with VDD=1V Radiatio strike: Q=100fC, t a =200s & t b =50s Models Radiatio Particle Strike 2/13/2017 ECE 695, Prof. Bermel 25
26 NMOS Device Modelig Costructed NMOS trasistors usig Setaurus-Structure editor tool Gate legth 35m, T ox = 1.2m sacer width = 30m A heavy io strikes at the ceter of the drai Heavy Io Puch through imlat Halo imlats VT imlat i INV SPICE Model out1 C load 3D Device Model G Well Cotact D S 2/13/2017 ECE 695, Prof. Bermel 26
27 NMOS Device Characterizatio Characterized the NMOS device usig Setaurus-DEVICE Width = 1mm Good MOSFET characteristics 2/13/2017 ECE 695, Prof. 27 Bermel
28 Results ad Discussios O1 Small devices collect less charge comared to large devices Reverse biased electric field is reset for shorter duratio i small devices Lower drai area less charge is collected through diffusio G1 If we usize a gate to harde it, a higher value of Q coll should be used Extremely imortat for low voltage oeratio O1.1 For low eergy strikes, Q coll remais roughly costat across differet gate sizes for omial voltage oeratio 2/13/2017 ECE 695, Prof. 28 Bermel
29 Next Class Will cover bad structure theory ad modelig techiques
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