MPSA13 MPSA14 CASE 29-02, STYLE 1 TO-92 (TO-226AA) DARLINGTON TRANSISTOR MAXIMUM RATINGS THERMAL CHARACTERISTICS ON CHARACTERISTICS) 1) NPN SILICON

Size: px
Start display at page:

Download "MPSA13 MPSA14 CASE 29-02, STYLE 1 TO-92 (TO-226AA) DARLINGTON TRANSISTOR MAXIMUM RATINGS THERMAL CHARACTERISTICS ON CHARACTERISTICS) 1) NPN SILICON"

Transcription

1 MAXMUM RATNGS Ratng Symbol Value Unt Collector-Emtter Voltage V CES 30 Collector-Base Voltage VCBO 30 Emtter-Base Voltage Vebo 0 Collector Current Contnuous c 500 madc Total Devce Ta = 25 C PD 625 mw 5.0 Total Devce Tq = 25 C Operatng and Storage Juncton Temperature Range THERMAL CHARACTERSTCS Pd.5 2 Watts Tj, T stg - 55 to +50 C Characterstc Symbol Max Unt Thermal Resstance, Juncton to Case ReJC 83.3 "C/W Thermal Resstance, Juncton to Ambent RftJA 200 C/w MPSA3 MPSA4 CASE 29-02, STYLE TO-92 (TO-226AA) DARLNGTON TRANSSTOR NPN SLCON Refer to 2N6426 for graphs. ELECTRCAL CHARACTERSTCS (TA = 25 C unless otherwse noted. ' ~ Characterstc Symbol Mn Unt OFF CHARACTERSTCS Collector-Emtter Breakdown Vbltage V(BR)CES 30 (q = QOAAdc, b = 0) Collector Cutoff Current (VCB = 30, e = 0) Emtter Cutoff Current 'CBO 'EBO 00 (V BE = 0, c = 0) ON CHARACTERSTCS) ) DC Current Gan dc = 0 madc, Vce = 5.0 ) MPSA3 MPSA4 hfe ,000 (C = 00 madc, Vqe = 5.0 ) Collector-Emtter Saturaton Voltage (l c = 00 madc, b = 0- madc) Base-Emtter On Voltage (lc = 00 madc, Vce = 5-0 ) SMALL-SGNAL CHARACTERSTCS Current-Gan Bandwdth Product(2) (lc = 0 madc, Vce = 5.0, f = 00 MHz) () Pulse Test: Pulse Wdth «s 300 us, Duty Cycle =s 2.0%. MPSA3 MPSA4 v CE(sat) VBE 0,000 20,000.5 MHz (2) fj = hfel ftest- 2-29

2 MPSA6 MPSA7 CASE 29-02, STYLE TO-92 (TO-226AA) SWTCHNG TRANSSTOR NPN SLCON MAXMUM RATNGS Ratng Symbol MPS-A6MPS-A7 Unt Collector-Emtter Voltage VCEO 40 Emtter-Base Voltage vebo 2 5 Collector Current Contnuous c 00 madc Total Devce T^ = 25 C PD mw Total Devce Tc = 25 C Operatng and Storage Juncton Temperature Range PD.5 2 Watt T J. T stg - 55 to + 50 C THERMAL CHARACTERSTCS Characterstc Thermal Resstance, Juncton to Ambent Thermal Resstance, Juncton to Case Symbol RflJA P-0JC Max 200 C/W ELECTRCAL CHARACTERSTCS (TA = 25 C unless otherwse noted.) OFF CHARACTERSTCS Characterstc Symbol Mn Max Unt Collector-Emtter Breakdown Voltage flc = -0 madc, b = 0) v (BR)CEO 40 Emtter-Base Breakdown Voltage (E = 0. madc, c = 0) MPS-A6 MPS-A7 v (BR)EBO Collector Cutoff Current (VCB = 30, e = 0) 'CBO 00 Emtter Cutoff Current (VBE = 0, c = 0) ON CHARACTERSTCS 'EBO DC Current Gan PC = 5.0 madc, Vce 0 ) hfe Collector-Emtter Saturaton Voltage (C = 0 madc, b =.0 madc) v CE(sat) 0.25 SMALL-SGNAL CHARACTERSTCS Current-Gan Bandwdth Product (C = 5.0 madc, Vce = 0, f 00 MHz) Output Capactance (VCB = 0, e = 0, f 00 khz) MPS-A6 MPS-A7 ft Cobo MHz pf 2-220

3 ' : ; FGURE -DC CURRENT GAN - TA = 25 j V CE = WPS-MT NPS- tf _ - " C, COLLECTOR CURRENT (ma) FGURE 2-SMALLSGNALCURRENTGAN FGURE 3 -SATURATON AND ON VOLTAGES C - MPS-A7 """ S-A " s v 3E{ on)" MPS-A6 MP S-A 6 t/ps A7 n n MP S-AG C, COLLECTOR CURRENT (ma) C. COLLECTOR CURRENT (m A) FGURE 4 - CURRENT-GAN-BANDWDTH PRODUCT FGURE 5 -OUTPUT CAPACTANCE MPS A6 MPS- M7 k - :^v N X T A = 25 C VCE^.0 Vdt ; MPS-A6 t C.COLLECTORCURRENT(mA) < p< -A Vr, REVERSE VOLTAGE (VOLTS) 2-22

4 MPSA8 CASE 29-02, STYLE TO-92 (TO-226AA) LOW NOSE TRANSSTOR NPN SLCON MAXMUM RATNGS Ratng Symbol Value Unt Collector-Emtter Voltage VCEO 45 Collector-Base Voltage vcbo 45 Emtter-Base Voltage v EBO 6.5 Collector Current Contnuous 'C 200 madc Total Devce l/ = 25 C PD mw Total Devce Tc = 25 C Operatng and Storage Juncton Temperatufe-Range Pd.5 2 Watts T J- T stg - 55 to + 50 C THERMAL CHARACTERSTCS Characterstc Symbol Max Unt Thermal Resstance, Juncton to Case R<uc 83.3 C/W Thermal Resstance, Juncton to Ambent RflJAd) 200 c/w ELECTRCAL CHARACTERSTCS (TA = 25 C unless otherwse noted.) OFF CHARACTERSTCS Collector-Emtter Breakdown Voltage(2) dc = 0 madc, b = 0) Collector-Base Breakdown Voltage dc = 00 yxadc, e = 0) Emtter-Base Breakdown Voltage (E = 0/xAdc, lc = 0) Characterstc Symbol Mn Typ Max Unt v (BR)CEO v (BR)CBO 45 V(BR)EBO 6.5 Collector Cutoff Current (Vcb - 30, l E = 'CBO ) ON CHARACTERSTCS^) DC Current Gan dc = 0 /xadc, Vce = 5.0 ) dc = 00 ^Adc, Vce = 50 > dc =.0 madc, V CE = 5-0 vdc ) dc = 0 madc, Vce = 5.0 ) Collector-Emtter Saturaton Voltage dc = 0 madc, b madc) dc = 50 madc, b = 5.0 madc) Base-Emtter On Voltage dc = 0 madc, Vce = 5.0 ) SMALL-SGNAL CHARACTERSTCS Current-Gan Bandwdth Product dc =.0 madc, Vce = 5.0 ' f = 00 MHz) hfe VcE(sat) VBE(on) ft MHz Collector-Base Capactance Ccb PF (Vcb = 5.0, l e = 0, f =.0 MHz) Emtter-Base Capactance Ceb,_ PF (V EB = 0.5, l c = 0, f =.0 MHz) Nose Fgure dc = 00 /xadc, Vce = 5.0, Rs = 0 kfl, f = 0 Hz to 5.7 khz) dc = 00 /xadc, Vce = 5.0, Rs =.0 ko, f = 00 Hz) Equvalent Short Crcut Nose Voltage dc = 00 ^Adc, Vce = 5.0, Rs =.0 ko, f = 00 Hz) () R#JA s measured wth the devce soldered nto a typcal prnted crcut board. (2) Pulse Test: Pulse Wdth «300 /as, Duty Cycle s 2.0%. NF v T 6.5 nv/vhz db 2-222

5 [! r! ;! MPSA8 FGURE - TRANSSTOR NOSE MODEL NOSE CHARACTERSTCS (Vce = 5.0, T A = 25 C) FGURE 2 - EFFECTS OF FREQUENCY NOSE VOLTAGE FGURE 3 - EFFECTS OF COLLECTOR CURRENT c = 0 ma m Bandwdth =.( Hz m!' Ba dwdlh =. a Hz RS'O f = Hz j o v^ "^ ^3.0 rr 0 man 300 na ** k 2.0 k 5.0 k 0 k 20 k 50 k 00 k (.FREQUENCY (Hz) **!^ > T oo^ vr LLk- Ssfe:' 00 khz C. COLLECTOR CURRENT (ma) FGURE 4 - NOSE CURRENT FGURE 5 - WDEBAND NOSE FGURE, - T Bandwtd th= 0 Hz to 5 7 khz "T c= ma 500 m TOmA k 2.0 k 5.0 k 0 k 20 k 50 k 0 (FREQUENCY (Hz) k 2.0 k 5.0 k 0 k 20 k 50 k 00 k RS, SOURCE RESSTANCE (OHMS) 2-223

6 l ' ' MPSA8 FGURE 6 - TOTAL NOSE VOLTAGE 00 Hz NOSE DATA 6 FGURE 7 - NOSE FGURE urn ]T c = 0m ma 2 o *.0 ma u_- - nn *"w to k 2.0k 5.0k 0k 20k 50k 00k RS. SOURCE RESSTANCE (OHMS) nn ^f30 MA 0ua4^ : k 2.0 k 5.0k 0k 20 k 50k 00k RS, SOURCE RESSTANCE (OHMS) FGURE 8 DC CURRENT GAN vc = 5. Vol s -Ta= 25 C- 25 C - ^ D3 0. ) c.ct)llec TOR CURR ENT ma FGURE 9 - "ON" VOLTAGES FGURE 0 - TEMPERATURE COEFFCENTS - Tj = 25 C Nl:... llll - V V CE = 5. V Tj = 25 Cto 2 5 C- T llll E(sat) SC" C JA-44h C, COLLECTOR CURRENT(mA). -55 Cto25 D C C, COLLECTOR CURRENT (ma) 2-224

7 MPSA8 FGURE - CAPACTANCE FGURE 2 - CURRENT-GAM-BANDWOTH PRODUCT Cob C "" T J 25 " C b Ccb ^ - VcE = 5.0V- T Tj = 25 C Vfl, REVERSE VOLTAGE (VOLTS) C COLLECTOR CURRENT (ma) 2-225

General Purpose Transistors

General Purpose Transistors General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount

More information

PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES PN2222A TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 75 V * Operating and storage junction

More information

BUH150. SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS, 150 WATTS

BUH150. SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS, 150 WATTS BUH SWTCHMODE NPN Silicon Planar Power Traistor The BUH has an application specific state of art die designed for use in Watts Halogen electronic traformers. This power traistor is specifically designed

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS MARKING DIAGRAM Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base

More information

2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES 2N441 TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM:.6 W(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 6 V * Operating and storage junction

More information

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES PNP SILICON SITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2N3637L JANTX 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV JANS ABSOLUTE

More information

BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.

BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92. B, A, B, C, B Amplifier Transistors PNP Silicon Features PbFree Packages are Available* B PNP AUDIO 1MA 65 5MW TO92 COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating

More information

COMPLEMENTARY NPN/PNP TRANSISTOR

COMPLEMENTARY NPN/PNP TRANSISTOR SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS MARKING DIAGRAM , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value

More information

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase

More information

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC42 Video Output for High Definition VDT High Speed Switching Applications Unit: mm High transition frequency: ft = 4 MHz (typ.) (VCE = V, IC = 7 ma)

More information

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1) N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector

More information

2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N4403. PNP Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector

More information

BUH100 SWITCHMODE NPN Silicon Planar Power Transistor The BUH100 has an application specific state of art die designed for use in 100 Watts Halogen el

BUH100 SWITCHMODE NPN Silicon Planar Power Transistor The BUH100 has an application specific state of art die designed for use in 100 Watts Halogen el SWTCHMODE NPN Silicon Planar Power Traistor The has an application specific state of art die designed for use in Watts Halogen electronic traformers. This power traistor is specifically designed to sustain

More information

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C) TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = V Low saturation voltage: VCE (sat) = V (max) High speed: tf =.

More information

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E , PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration

More information

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,

More information

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain BDP97_BDP99_BDP95 Silicon NPN Transistors For AF driver and output stages High collector current High current gain Low collectoremitter saturation voltage Complementary types: BDP98, BDP95, BDP95 (PNP)

More information

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with

More information

2N3904 SMALL SIGNAL NPN TRANSISTOR

2N3904 SMALL SIGNAL NPN TRANSISTOR SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment TO-92 / Bulk -AP TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB

More information

2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:

2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification DESCRIPTION High Breakdown oltage- : (BR)CBO = 1100(Min) Fast Switching Speed Wide Area of Safe Operation APPLICATIONS

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector

More information

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power

More information

RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JANSM 3K Rads (Si) 2N2221AL 2N2222AL JANSD K Rads (Si) 2N2221AUA 2N2222AUA JANSP 30K Rads

More information

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 NPN Silicon AF Transistor Array Precision matched transistor pair: I C % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors Complementary

More information

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C) SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:

More information

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C) TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications

More information

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BC87UPN NPN Silicon AF Transistor Array For AF stages and driver applications High current gain Low collectoremitter saturation voltage 4 6 Two (galvanic) internal isolated NPN/PNP transistors in one package

More information

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:

More information

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified

More information

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223 NPN Silicon HighVoltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage Complementary type: BFN9 (PNP)

More information

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features. Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter

More information

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (NPN) Pbfree

More information

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1 PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified

More information

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40 PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BC87.../W, BC88.../W (NPN) Pbfree (RoHS compliant)

More information

HARDENED PNP SILICON SWITCHING TRANSISTOR

HARDENED PNP SILICON SWITCHING TRANSISTOR 6 Lake Street, Lawrence, MA 01841 RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JANSM 3K Rads (Si) 2N2906AL 2N2907AL JANSD 10K Rads

More information

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS 2N4918-2N492 Series Medium-Power Plastic PNP Silicon Transistors These mediumpower, highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low

More information

4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE

4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE Order this document by N/D GlobalOptoisolator The N, N, N7 and N8 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most

More information

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface

More information

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector

More information

BC846ALT1 Series. General Purpose Transistors. NPN Silicon

BC846ALT1 Series. General Purpose Transistors. NPN Silicon BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages

More information

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2 NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()

More information

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC

More information

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5401. PNP Silicon. These are Pb Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage

More information

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM 2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140

More information

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO

More information

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

More information

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general

More information

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS MARKING DIAGRAM High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter

More information

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS 2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation

More information

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage BCW6, BCX7 NPN Silicon A Transistors or A input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (PNP)

More information

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the

More information

DATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12

DATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 199 File under Discrete Semiconductors, SC14 1995 Sep 1 FEATURES High output voltage capability High gain bandwidth product Good thermal stability

More information

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,

More information

350mW, PNP Small Signal Transistor

350mW, PNP Small Signal Transistor 35mW, PNP Small Signal Traistor FEATURES - Epitaxial planar die cotruction - Surface device type mounting - Moisture seitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version

More information

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS , Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.

More information

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. Dual General Purpose Transistors

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. Dual General Purpose Transistors MBT394DW, MBT394DW2, SMBT394DW, NSVMBT394DW Dual General Purpose Transistors The MBT394DW and MBT394DW2 devices are a spinoff of our popular SOT23/SOT323 threeleaded device. It is designed for general

More information

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... 3~4

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... 3~4 List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3~4 Switching time equivalent test circuits... Rating and characteristic curves...

More information

CA3086. General Purpose NPN Transistor Array. Applications. Pinout. Ordering Information. Data Sheet August 2003 FN483.5

CA3086. General Purpose NPN Transistor Array. Applications. Pinout. Ordering Information. Data Sheet August 2003 FN483.5 Data Sheet August FN8. General Purpose NPN Transistor Array The consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected

More information

BC807-16W/-25W/-40W Taiwan Semiconductor

BC807-16W/-25W/-40W Taiwan Semiconductor 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS

More information

DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.

DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D1 Supersedes data of 1999 Mar 1 1999 Jul 3 FEATURES PINNING Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability.

More information

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS , A, B, C Designed for Complementary Use with the BD26 Series W at 25 C Case Temperature 0 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E SOT-9

More information

ANALOG ELECTRONICS I. Transistor Amplifiers DR NORLAILI MOHD NOH

ANALOG ELECTRONICS I. Transistor Amplifiers DR NORLAILI MOHD NOH 241 ANALO LTRONI I Lectures 2&3 ngle Transstor Amplfers R NORLAILI MOH NOH 3.3 Basc ngle-transstor Amplfer tages 3 dfferent confguratons : 1. ommon-emtter ommon-source Ib B R I d I c o R o gnal appled

More information

DATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

DATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution

More information

BC BC Pb-containing package may be available upon special request

BC BC Pb-containing package may be available upon special request BC846...BC8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BC86...BC86...(PNP)

More information

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin

More information

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223 BCP...BCP... PNP Silicon AF Transistors For AF driver and output stages High collector current Low collectoremitter saturation voltage Complementary types: BCP4... BCP6 (NPN) Pbfree (RoHS compliant) package

More information

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23 NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling

More information

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223 BCP68 NPN Silicon AF Transistor For general AF applications High collector current High current gain 4 Low collectoremitter saturation voltage Complementary type: BCP69 (PNP) Pbfree (RoHS compliant) package

More information

4N25/ 4N26/ 4N27/ 4N28. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

4N25/ 4N26/ 4N27/ 4N28. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features. Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline

More information

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices.  Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

RF amplifier up to GHz range specially for wide band antenna amplifier.

RF amplifier up to GHz range specially for wide band antenna amplifier. Silicon NPN Planar RF Transistor BFR91A Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information

200mW, PNP Small Signal Transistor

200mW, PNP Small Signal Transistor 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and

More information

4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features. Optocoupler with Phototransistor Output Description The 4N35/ 4N36/ 4N37 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.

More information

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface

More information

Flyback Converter in DCM

Flyback Converter in DCM Flyback Converter n CM m 1:n V O V S m I M m 1 1 V CCM: wth O V I I n and S 2 1 R L M m M m s m 1 CM: IM 2 m 1 1 V 1 Borderlne: O VS I n wth V nv 2 1 R 2 L 1 M m s O S m CM f R > R 2n crt 2 L m 2 (1 )

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short

More information

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23 Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Pbfree (RoHS compliant) package Qualification

More information

MJF6388 (NPN) MJF6668 (PNP) Complementary Power Darlingtons. For Isolated Package Applications

MJF6388 (NPN) MJF6668 (PNP) Complementary Power Darlingtons. For Isolated Package Applications MJF688 (), () Complementary Power Darlingtons For Isolated Package Applications Designed for generalpurpose amplifiers and switching applications, where the mounting surface of the device is required to

More information

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323 Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads

More information

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features Silicon NPN Planar RF Transistor BFS17/BFS17R/BFS17W Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features High power gain SMD-package

More information

0.016 W/ C to +150 C

0.016 W/ C to +150 C MJF00 (NPN), MJF0 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general purpose amplifier and switching applications, where the mounting surface of the device is

More information

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BCX69 (PNP) Pbfree (RoHS compliant) package )

More information

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323 Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree

More information

DATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

DATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution

More information

MJD18002D2T4G POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS

MJD18002D2T4G POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS MJD8D Bipolar NPN Traistor High Speed, High Gain Bipolar NPN Power Traistor with Integrated CollectorEmitter Diode and BuiltIn Efficient Antisaturation Network The MJD8D is a stateoftheart high speed,

More information

BC846BDW1, BC847BDW1, BC848CDW1. Dual General Purpose Transistors. NPN Duals

BC846BDW1, BC847BDW1, BC848CDW1. Dual General Purpose Transistors. NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed

More information

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section 4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free

More information

PM25RSK120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts

PM25RSK120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts N O CC O CC N FO CC N FO CC N FO CC S Powerex, nc., Hillis Street, Youngwood, Pennsylvania 5697-8 (74) 95-77 ntellimod Module Three Phase + Brake GBT nverter Output A E Z F G H AA L 4 6 5 7 8 9 6 4 5 7

More information

BFS483. Low Noise Silicon Bipolar RF Transistor

BFS483. Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor

More information

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC336 is designed for general purpose, low power applications for consumer and industrial designs.

More information

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323 NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLU86 UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLU86 UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1991 FEATURES SMD encapsulation Emitter-ballasting resistors for optimum temperature profile Gold metallization ensures excellent reliability. DESCRIPTION NPN

More information

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu Silicon NPN Planar RF Transistor BFR96TS Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features

More information

RF amplifier up to GHz range specially for wide band antenna amplifier.

RF amplifier up to GHz range specially for wide band antenna amplifier. Silicon NPN Planar RF Transistor BFR91 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information