200mW, PNP Small Signal Transistor
|
|
- Sybil Beasley
- 5 years ago
- Views:
Transcription
1 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA Case : SOT 23 small outline plastic package Terminal : Matte tin plated, lead free, solderable per MILSTD202, method 208 guaranteed High temperature soldering guaranteed : 260 C/s Weight : grams (approximately) SOT23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) PARAMETER Power Dissipation CollectorBase oltage CollectorEmitter oltage EmitterBase oltage Collector Current Junction and Storage Temperature Range BC857 BC857 SYMBOL ALUE UNIT P D CBO CEO EBO I C 200 mw A T J, T STG 55 to C CollectorBase Breakdown oltage CollectorEmitter Breakdown oltage BC857 I C = μa I E = 0 BC857 I C = ma I B = 0 SYMBOL EmitterBase Breakdown oltage I E = 1μA I C = 0 (BR)EBO 5 Collector Cutoff Current CB = 70 BC857 CB = 45 CB = 25 Emitter Cutoff Current EB = 5 I C =0 I EBO 0.1 μa DC Current Gain B, BC857B, B CE = 5 I C = 2mA h FE BC857C, C CollectorEmitter Saturation oltage PARAMETER A, BC857A, A (BR)CEO UNIT I C = 0mA I B = 5mA CE(sat) 0.65 BaseEmitter Saturation oltage I C = 0mA I B = 5mA BE(sat) 1.1 Transition Frequency CE = 5 I C = ma f= 0MHz f T 0 MHz I E = 0 (BR)CBO I CBO MIN MAX na ersion : H1606
2 C ob [pf], Capacitance f T [MHz], Current GainBandwidth Product BE(sat), CE(sat) [], Saturation oltage h FE, DC Current Gain A SERIES RATINGS AND CHARACTERISTIC CURES (TA=25 C unless otherwise noted) 50 Fig. 1 Static Characteristic 00 Fig. 2 DC Current Gain I B = 400μA I B = 350μA I B = 300μA I B = 250μA I B = 200μA 0 CE = I B = 150μA I B = 0μA 5 0 I B = 50μA CE [], CollectorEmitter oltage Fig.3 BaseEmitter Saturation oltage S.CollectorEmitter Saturation Fig. 4 BaseEmitter On oltage 0. I C = I B CE = 5 1 BE (sat). 0.1 CE (sat) BE [], BaseEmitter oltage Fig.5 Collector Output Capacitance Fig. 6 Current Gain Bandwidth Product 0 f=1mhz I E =0 00 f=1mhz I E = CB [], CollectorBase oltage ersion : H1606
3 RATINGS AND CHARACTERISTIC CURES (TA=25 C unless otherwise noted) Fig. 7 DC Current Gain as a Function of Collector Current; Typical alues Fig. 8 BaseEmitter oltage as a Function of Collector Current; Typical alues h FE h FE I C BC857A: CE=5 BE BE I C BC857A: CE= Ta=150 O C 800 Ta=55 O C Ta=25 O C Ta=55 O C Ta=25 O C Ta=150 O C I C (ma) I C (ma) ersion : H1606
4 Ordering information Packing code Packing code suffix(*) Package Packing BC85xx (Note 1) RF G SOT23 3K / 7 " Reel Note 1 : "xx" is Device Code from "6A" thru "8C". *: optional available Example Preferred Packing code Packing code suffix Description A RFG A RF G Green compound ersion : H1606
5 Dimensions DIM. Unit(mm) Unit(inch) Min Max Min Max A B C D E F G H REF 0.1 REF REF REF Suggested PAD Layout DIM. A B C D Unit(mm) Unit(inch) Typ. Typ Marking A B BC857A BC857B BC857C A B C Marking 3A 3B 3E 3F 3G 3J 3K 3L ersion : H1606
6 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. ersion : H1606
BC807-16W/-25W/-40W Taiwan Semiconductor
200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS
More informationBC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA
NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and
More information350mW, PNP Small Signal Transistor
35mW, PNP Small Signal Traistor FEATURES - Epitaxial planar die cotruction - Surface device type mounting - Moisture seitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version
More informationLow VF SMD Schottky Barrier Diode
Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing
More informationBAT54 / A / C / S Taiwan Semiconductor
230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant
More informationBAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode
Small Signal Product mw Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage drop - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish
More information200mA, 30V Schottky Barrier Diode
200mA, 30V Schottky Barrier Diode FEATURES Designed for mounting on small surface Low capacitance Low forward voltage drop Compliant to RoHS directive 20/65/EU and in accordance to WEEE 2002/96/EC Halogen-free
More information350mW, SMD Switching Diode
350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free
More informationType Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified
More informationBC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
More informationBC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
More informationBDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain
BDP97_BDP99_BDP95 Silicon NPN Transistors For AF driver and output stages High collector current High current gain Low collectoremitter saturation voltage Complementary types: BDP98, BDP95, BDP95 (PNP)
More informationType Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E
, PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration
More informationBC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
More informationType Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E
BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC
More informationParameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W
Silicon NPN Planar RF Transistor Features High power gain Low noise figure Lead (Pb)-free component Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC e E B C Applications RF amplifier up to GHz
More informationType Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40
PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BC87.../W, BC88.../W (NPN) Pbfree (RoHS compliant)
More informationBC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
More informationType Marking Pin Configuration Package BFN24 BFN26 1=B 1=B
BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:
More informationType Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223
NPN Silicon HighVoltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage Complementary type: BFN9 (PNP)
More informationCOMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
More informationBC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
More informationType Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BCX69 (PNP) Pbfree (RoHS compliant) package )
More informationType Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223
BCP68 NPN Silicon AF Transistor For general AF applications High collector current High current gain 4 Low collectoremitter saturation voltage Complementary type: BCP69 (PNP) Pbfree (RoHS compliant) package
More informationBCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223
BCP...BCP... PNP Silicon AF Transistors For AF driver and output stages High collector current Low collectoremitter saturation voltage Complementary types: BCP4... BCP6 (NPN) Pbfree (RoHS compliant) package
More informationBC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
More informationC1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
BC87UPN NPN Silicon AF Transistor Array For AF stages and driver applications High current gain Low collectoremitter saturation voltage 4 6 Two (galvanic) internal isolated NPN/PNP transistors in one package
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationType Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
NPN Silicon AF Transistor Array Precision matched transistor pair: I C % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors Complementary
More informationBC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
More informationB 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section
4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free
More informationBCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
BCW6, BCX7 NPN Silicon A Transistors or A input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (PNP)
More informationPZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for
More informationBCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (NPN) Pbfree
More informationLOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View
DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface
More information2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
More informationBC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.
B, A, B, C, B Amplifier Transistors PNP Silicon Features PbFree Packages are Available* B PNP AUDIO 1MA 65 5MW TO92 COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating
More informationC1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2
NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
More informationDATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationPb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1
PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified
More informationPN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES
PN2222A TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 75 V * Operating and storage junction
More informationBC846BDW1, BC847BDW1, BC848CDW1. Dual General Purpose Transistors. NPN Duals
BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed
More informationType Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short
More informationMMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
More informationBC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO
More information2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES
2N441 TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM:.6 W(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 6 V * Operating and storage junction
More informationDATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 199 File under Discrete Semiconductors, SC14 1995 Sep 1 FEATURES High output voltage capability High gain bandwidth product Good thermal stability
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,
More informationBC BC Pb-containing package may be available upon special request
BC846...BC8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BC86...BC86...(PNP)
More informationBC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector
More information2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
More informationType Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Pbfree (RoHS compliant) package Qualification
More informationP2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
More informationBC817-AU SERIES NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45 Volts POWER 330 mw FEATURES MECHANICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
B817AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volts POWER 33 mw SOT23 Unit: inch(mm) FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design ollector current I =
More informationBFS483. Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor
More information65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA
Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
More informationMMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,
More information2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140
More informationBCM857BV; BCM857BS; BCM857DS
BCM857BV; BCM857BS; BCM857DS Rev. 05 27 June 2006 Product data sheet 1. Product profile 1.1 General description in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated
More informationType Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads
More informationBCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
More informationMC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays
General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC336 is designed for general purpose, low power applications for consumer and industrial designs.
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For lowdistortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 70 ma to 30 ma Power amplifiers for DECT and
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
More informationE 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2
OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features NEW PRODUT omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 297A Type (PNP) Ideal for Low Power Amplification
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
More informationDATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
More informationType Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type
More informationType Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic
More informationDATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
More informationType Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree
More information2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification DESCRIPTION High Breakdown oltage- : (BR)CBO = 1100(Min) Fast Switching Speed Wide Area of Safe Operation APPLICATIONS
More informationDATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
More informationType Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q
More information2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
More informationType Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 0 ma to 70 ma Pbfree (RoHS compliant)
More information2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
More information2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
More informationBC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor
November 204 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC546, V CEO = 65 V Low-Noise: BC549, BC550 Complement to BC556, BC557,
More informationPN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value
More informationDATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
More informationDATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
More informationDATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
More informationPNP power transistor
FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base
More informationDATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
More information150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
More informationLead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified
Lead-free Green MMDT2227M OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 2907A Type (PNP) Ideal for Low
More informationDATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationDATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution
More informationDATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More informationType Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23
SMBTA6/MMBTA6 NPN Silicon AF Transistor Low collectoremitter saturation voltage omplementary type: SMBTA 6 / MMBTA6 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type Marking Pin onfiguration
More informationCNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection Features Breakdown Voltage, 500 V RMS No Base Terminal Connection for Improved Common Mode Interface Immunity Long Term Stability Industry Standard
More information