BC807-16W/-25W/-40W Taiwan Semiconductor
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- Amos Carter
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1 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS complian Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA Case: SOT 323 small outline plastic package Terminal: Matte tin plated, lead free, solderable per MILSTD202, Method 208 guaranteed High temperature soldering guaranteed: 260 C/s Weight: grams (approximately) SOT323 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25 unless otherwise noted) PARAMETER SYMBOL ALUE UNIT Power Dissipation 200 CollectorBase oltage CollectorEmitter oltage EmitterBase oltage Collector Current Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range T J, T STG 55 to + 50 C Notes:. Transistor mounted on a FR4 printedcircuit board P D CBO CEO EBO I C R θja mw A K/W PARAMETER SYMBOL MIN MAX UNIT CollectorBase Breakdown oltage at I C = µa (BR)CBO 50 CollectorEmitter Breakdown oltage at I C = ma (BR)CEO 45 EmitterBase Breakdown oltage at I E = µa (BR)EBO 5 Collector Cutoff Current at CB = 20 na I at CB = 20, T J = 50 o CBO C 5 µa Emitter Cutoff Current at EB = 5 I EBO na CollectorEmitter Saturation oltage at I C = 500mA I B = 50 ma CE(sat) 0.7 Transition Frequency CE = 5 I C = ma f = MHz f T 80 MHz at CE =, I C = ma 6W DC Current Gain 25W 40W at CE =, I C = 500 ma h FE ersion: B4
2 RATINGS AND CHARACTERISTICS CURES (TA=25 unless otherwise noted) Fig.Total Power Dissipation P tot = f (T S ) Fig.2 Permissible Pulse Load R θja = f (tp) P tot (mw) R θja (K/W) T S ( o C) D= tp (µs) 0 Fig.3 Permissible Pulse Load P totmax / P totdc = f (tp) 000 Fig. 4 Coolector Cutoff Current I CBO = f (T A ) CB =25 D=0 P totmax /P totdc I CBO (na) 00 0 max typ E+00.E+0.E+02.E+03.E+04.E+05.E+06 tp tp (µs) (s) T A ( o C) ersion: B4
3 RATINGS AND CHARACTERISTICS CURES (TA=25 unless otherwise noted) Fig.5 DC Current Gain h FE = f (I C ) CE = Fig. 6 Transition Frequency f T =f (I C ) CE = 5 0 o C 0 h FE f T (MHz) 25 o C 50 o C I C (ma) 0 I C (ma) Fig. 7 BaseEmitter Saturation oltage I C = f ( BEsat ), h FE = Fig. 8 CollectorEmitter Saturation oltage I C = f ( CEsat ), h FE = o C 0 50 o C.0 I C (ma).0 25 o C 50 o C I C (ma) 25 o C 50 o C BEsat () CEsat () ersion: B4
4 ORDERING INFORMATION PART NO. MANUFACTURE PACKING GREEN COMPOUND PACKAGE PACKING MARKING BC8076W (Note) RF G SOT323 3K / 7" Reel 5CR BC80725W RF G SOT323 3K / 7" Reel 5CS BC80740W RF G SOT323 3K / 7" Reel 5CT Note: Manufacture special control, if empty means no special control requirement. EXAMPLE PREFERRED P/N PART NO. MANUFACTURE PACKING GREEN COMPOUND DESCRIPTION BC8076W RFG BC8076W RF G Green compound BC8076WB0 RFG BC8076W B0 RF G Green compound ersion: B4
5 DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A B C D E F SUGGEST PAD LAYOUT DIM. A B C D Unit(mm) Unit(inch) Typ. Typ ersion: B4
6 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. ersion: B4
200mW, PNP Small Signal Transistor
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