spacing GEO Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified. Features

Transcription

1 Reflexlichtschranke im SMT-Gehäuse Reflective Interrupter in SMT Package SFH spacing GEO Anode - Emitter Collector - Cathode Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features Optimaler Arbeitsabstand 1 mm bis 5 mm Optimal operating distance 1 mm to 5 mm IR-GaAs-Lumineszenzdiode: Sender IR-GaAs-emitter Si-NPN-Fototransistor: Empfänger Silicon NPN phototransistor detector Tageslichtsperrfilter Daylight filter against undesired light effects Hoher Kollektor-Emitter-Strom typ..7 High collector-emitter current typ..7 Geringe Sättigungsspannung Low saturation voltage Sender und Empfänger galvanisch getrennt Emitter and detector electrically isolated feo6422 Anwendungen Positionsmelder Endabschalter Drehzahlüberwachung, -regelung Bewegungssensor Applications Position reporting End position switch Speed monitoring and regulating Motion transmitter Typ Type Bestellnummer Ordering Code SFH 921 Q6272-P SFH 921-1/2 Q6272-P SFH 921-2/3 Q6272-P SFH 921-3/4 Q6272-P I CE I F = 1, V CE = 5 V, d = 1 mm Semiconductor Group

2 SFH 921 Grenzwerte Maximum Ratings Sender (GaAs-Diode) Emitter (GaAs diode) Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Vorwärtsstoβstrom (t p 1 µs) Surge current Verlustleistung Power dissipation V R 5 V I F 5 I FSM 1.5 A P tot 8 mw Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage Kollektor-Emitter-Sperrspannung, (t 2 min) Collector-emitter voltage, (t 2 min) Emitter-Kollektor-Sperrspannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation V CEO 16 V V CEO 3 V ECO 7 I C 1 P tot 1 mw Reflexlichtschranke Light reflection switch Lagertemperatur Storage temperature range Umgebungstemperatur Ambient temperature range Sperrschichttemperatur Junction temperature range Elektrostatische Entladung Electrostatic discharge T stg C T A T j 1 ESD 2 KV Umweltbedingungen / Environment conditions 3 K3 acc. to EN (IEC ) Semiconductor Group

3 SFH 921 Löthinweise Soldering conditions Bauform Type Drypack Level acc. to IPSstand. 2 Tauch-, Schwalllötung Dip, wave soldering Peak temp. (solderbath) Max. time in peak zone Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Reflowlötung Reflow soldering Peak temp. (package temp.) Max. time in peak zone Kolbenlötung Iron soldering (Iron temp.) SFH n. a. 245 C 1 sec. 3 C <5sec. Kennwerte (T A = 25 C) Characteristics Sender (IR-GaAs-Diode) Emitter (IR-GaAs diode) Durchlaβspannung Forward voltage I F = 5 Sperrstrom Reverse current V R = 5 V Kapazität Capacitance V R = V, f = 1 MHz V F 1.25 ( 1.65) V I R.1 ( 1) µa C O 25 pf Wärmewiderstand 1) R thja 4 K/W Thermal resistance 1) Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Kapazität Capacitance V CE = 5 V, f = 1 MHz C CE 1 pf Kollektor-Emitter-Reststrom Collector-emitter leakage current V CE = 2 V Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) V CE = 5 V, E V = 1 Lx I CEO 3 ( 2) na I P 3.5 Semiconductor Group

4 SFH 921 Kennwerte (T A = 25 C) Characteristics Wärmewiderstand 1) R thja 4 K/W Thermal resistance 1) Reflexlichtschranke Light reflection switch Kollektor-Emitterstrom Collector-emitter current Kodak neutral white test card, 9 % Reflexion I F = 1 ; V CE = 5 V; d = 1 mm Kollektor-Emitter-Sättigungsspannung Collector-emitter-saturation voltage Kodak neutral white test card, 9 % Reflexion I F = 1 ; d = 1 mm; I C = 85 µa 1) Montage auf PC-Board mit >5 mm 2 Padgröβe 1) Mounting on pcb with >5 mm 2 pad size I CE min..25 I CE typ..7 V CE sat.15 (.6) V d Reflector with 9% reflexion (Kodak neutral white test card) OHM2257 Semiconductor Group

5 SFH 921 Schaltzeiten (T A = 25 C, V CC = 5 V, I C = 1 1), R L = 1 kω) Switching times R L Ι C V CC Output OHM2258 Einschaltzeit Turn-on time Anstiegzeit Rise time Ausschaltzeit Turn-off time Abfallzeit Fall time t ein 65 µs t on t r 5 µs t aus 55 µs t off t f 5 µs 1) I C eingestellt über den Durchlaβstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) 1) I C as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) Collector current I C = f( d) I Cmax Permissible power dissipation for diode and transistor P tot = f (T A ) Switching characteristics t = f (R L ) T A = 25 o C, I F = 1 1 Ι C OHO Total power dissipation OHO OHO785 Ι C max % P tot mw 12 8 Detector Emitter t µ s Ι C = 1 µa t on t off 1 2 t on t off 2 Kodak neutral white test card Mirror mm 5 d C 1 T A = 1 Ι C kω R L Semiconductor Group

6 SFH 921 Max. permissible forward current I F = f (T A ) OHO2259 Permissible pulse handling capability I F = f (t p ), D = Parameter, T A = 25 o C DC D = t P T D = t P T OHO779 Output characteristics (typ.) I C = f (V CE ), spacing to reflector: d = 1 mm, 9% reflection, T A = 25 o C 2. Ι C = 25 = 2 = 15 = 1 = 5 OHO C 1 T A Forward voltage (typ.) of the diode V F = f (T) s 1 2 t Relative spectral emission of emitter (GaAs) I rel = f (λ) and detector (Si) S rel = f (λ) P V V CE 1.3 OHO OHO786 V F V Ι rel S rel % = Detector C 1 T 7 Emitter nm 11 λ Transistor capacitance (typ.) C CE = f (V CE ), T A = 25 o C, f = 1 MHz 5 pf C CE OHO374 Collector current I C = f (I F ), spacing d to reflector = 1 mm, 9% reflection Ι C OHO V CE =5 V V 1 V CE Semiconductor Group