NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays BPX 82 84

Transcription

1 NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm Hohe Linearität Mehrstellige Zeilenbauform aus klarem Epoxy Gruppiert lieferbar Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb Lochstreifenleser Industrieelektronik Messen/Steuern/Regeln Features Especially suitable for applications from 440 nm to 1070 nm High linearity Multiple-digit array package of transparent epoxy Available in groups Applications Miniature photointerrupters Punched tape reading Industrial electronics For control and drive circuits Typ Type Transistoren pro Zeile Number of Transistors per Array Maße A Dimensions A Bestellnummer Ordering Code min. max. BPX Q62702-P21 BPX Q62702-P25 BPX Q62702-P

2 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle 2 mm vom Gehäuse, Lötzeit t 3 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 3 s Löttemperatur bei Kolbenlötung Lötstelle 2 mm vom Gehäuse, Lötzeit t 5 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 5 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, T A = 25 C Total power dissipation Wärmewiderstand Thermal resistance Wert Einheit Value Unit T op ; T stg C T S 230 C T S 300 C V CE 32 V I C 50 ma I CS 200 ma P tot 90 mw R thja 750 K/W

3 Kennwerte (T A = 25 C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von S max Spectral range of sensitivity S = 10% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Kapazität Capacitance V CE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current V CE = 25 V, E = 0 Wert Value λ S max 850 nm λ nm Einheit Unit A 0.17 mm 2 L B mm mm L W H mm ϕ ± 18 Grad deg. C CE 6 pf I CEO 25 ( 200) na

4 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Werte Value Einheit Unit -A -B -C Fotostrom, λ = 950 nm Photocurrent E e = 0.5 mw/cm 2, V CE = 5 V E v = 1000 Ix, Normlicht/standard light A, I PCE I PCE ma ma V CE = 5 V Anstiegszeit/Abfallzeit Rise and fall time I C = 1 ma, V CC = 5 V, R L = 1 kω t r, t f µs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = I PCEmin 1) 0.3, E e = 0.5 mw/cm 2 1) I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) I PCEmin is the min. photocurrent of the specified group. V CEsat mv Die gelieferten Bauelemente sind mit -A, -B, -C gekennzeichnet. Wegen Ausbeuteschwankungen ist jedoch die Bestellung einer definierten Gruppe -A, -B, -C nicht möglich. For delivery the components are marked -A, -B, -C. Due to differing yields, it is not possible to order a definite group

5 Relative Spectral Sensitivity S rel = f (λ) Photocurrent I PCE /I PCE25 o = f (T A ), V CE = 5 V Directional Characteristics S rel = f (ϕ) Photocurrent I PCE = f (E e ), V CE = 5 V Collector-Emitter Capacitance C CE = f (V CE ), f = 1 MHz, E = 0 Total Power Dissipation P tot = f (T A )

6 Maßzeichnung Package Outlines 7.4 (0.291) 7.0 (0.276) 0.5 (0.020) 0.4 (0.016) 0.7 (0.028) (0.100) 0.6 (0.024) 2.1 (0.083) spacing 1.5 (0.059) A 0.4 A 1.4 (0.055) 1.0 (0.039) Collector (BPX 83) Cathode (LD 263) Chip position 1.9 (0.075) 1.7 (0.067) 2.7 (0.106) 2.5 (0.098) 0.25 (0.010) 0.15 (0.006) 3.6 (0.142) 3.2 (0.126) 3.5 (0.138) 3.0 (0.118) GEOY6367 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered