Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT Silicon Pin Photodiode with Daylight Filter; in SMT Lead (Pb) Free Product - RoHS Compliant
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1 Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT Silicon Pin Photodiode with Daylight Filter; in SMT Lead (Pb) Free Product - RoHS ompliant BP 14 F BP 14 FS BP 14 F BP 14 FS Wesentliche Merkmale Speziell geeignet für Anwendungen bei 95 nm Kurze Schaltzeit (typ. 2 ns) DIL-Plastikbauform mit hoher Packungsdichte BP 14 FS: geeignet für Vapor-Phase Löten und IR-Reflow Löten Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern, Gerätefernsteuerungen Lichtschranken für Gleich- und Wechsellichtbetrieb Features Especially suitable for applications of 95 nm Short switching time (typ. 2 ns) DIL plastic package with high packing density BP 14 FS: suitable for vapor-phase and IR-reflow soldering Applications IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment Photointerrupters Typ Type BP 14 F BP 14 FS Bestellnummer Ordering ode Q6272-P84 Q6272-P
2 BP 14 F, BP 14 FS Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, T A = 25 Total power dissipation Wert Value T op ; T stg V R 2 V Einheit Unit P tot 15 mw Kennwerte (T A = 25, λ = 95 nm) haracteristics Bezeichnung Parameter Fotostrom Photocurrent V R = 5 V, E e = 1 mw/cm 2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1 % von S max Spectral range of sensitivity S = 1 % of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, V R = 1 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, E e =.5 mw/cm 2 Open-circuit voltage Wert Value I P 34 ( 25) µa λ S max 95 nm λ 8 11 nm Einheit Unit A 4.84 mm 2 L B L W mm mm ϕ ±6 Grad deg. I R 2 ( 3) na S λ.7 A/W η.9 Electrons Photon V O 33 ( 25) mv
3 BP 14 F, BP 14 FS Kennwerte (T A = 25, λ = 95 nm) haracteristics (cont d) Bezeichnung Parameter Kurzschlussstrom, E e =.5 mw/cm 2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 5 Ω; V R = 5 V; λ = 85 nm; I p = 8 µa I S 17 µa t r, t f 2 ns Durchlassspannung, I F = 1 ma, E = V F 1.3 V Forward voltage Kapazität, V R = V, f = 1 MHz, E = 48 pf apacitance Temperaturkoeffizient von V O T V 2.6 mv/k Temperature coefficient of V O Temperaturkoeffizient von I S Temperature coefficient of I S T I.18 %/K Rauschäquivalente Strahlungsleistung NEP W Noise equivalent power Hz V R = 1 V Nachweisgrenze, V R = 1 V Detection limit Wert Value D* Einheit Unit cm Hz W
4 BP 14 F, BP 14 FS Relative Spectral Sensitivity S rel = f (λ) S rel 1 % OHF368 Photocurrent I P = f (E e ), V R = 5 V Open-ircuit Voltage V O = f (E e ) Ι P OHF µa mv V O Total Power Dissipation P tot = f (T A ) 16 mw P tot 14 OHF V O Ι P Dark urrent I R = f (V R ), E = Ι R 4 pa nm 12 λ OHFD µw/cm 1 4 E e apacitance = f (V R ), f = 1 MHz, E = 6 pf 5 4 OHF1778 Dark urrent I R = f (T A ), V R = 1 V, E = Ι R 1 3 na TA OHF V 2 V R Directional haracteristics S rel = f (ϕ) V 1 2 V R TA ϕ 1. OHF
5 BP 14 F, BP 14 FS Maßzeichnung Package Outlines BP 14 F.6 (.24).4 (.16) athode marking 5.4 (.213) 4.9 (.193).8 (.31).6 (.24) 4. (.157) 4.5 (.177) 3.7 (.146) 4.3 (.169) hip position.6 (.24).4 (.16) 2.2 (.87) 1.9 (.75).6 (.24).4 (.16).5 (.2).3 (.12).8 (.31).6 (.24) 1.8 (.71) 1.4 (.55) 1.2 (.47).7 (.28).35 (.14).2 (.8) Photosensitive area 2.2 (.87) x 2.2 (.87).6 (.24).4 (.16) (.2) spacing 3.5 (.138) 3. (.118) Approx. weight.1 g GEOY675 BP 14 FS 1.2 (.47) 1.1 (.43)...1 (...4).3 (.12) hip position 1.1 (.43).9 (.35) 4.5 (.177) 4.3 (.169).9 (.35).7 (.28) 1.7 (.67) 1.5 (.59) 4. (.157) 3.7 (.146) 6.7 (.264) 6.2 (.244) (.63).2 (.8).1 (.4) ±.2 (.8) Photosensitive area athode lead 2.2 (.87) x 2.2 (.87) GEOY6861 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch)
6 BP 14 F, BP 14 FS Lötbedingungen BP 14 FS Vorbehandlung nach JEDE Level 4 Soldering onditions Preconditioning acc. to JEDE Level 4 IR-Reflow Lötprofil für bleifreies Löten IR Reflow Soldering Profile for lead free soldering (nach J-STD-2B) (acc. to J-STD-2B) T Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 3 s max 1 s min OHLA ± s max 1 s max Ramp Down 6 K/s (max) 5 Ramp Up 3 K/s (max) s 3 t Wellenlöten (TTW) BP 14 F (nach E 82) TTW Soldering (acc. to E 82) T Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca 2 K/s 5 K/s 2 K/s 5 2 K/s Zwangskühlung forced cooling s 25 t
7 BP 14 F, BP 14 FS Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. omponents used in life-support devices or systems must be expressly authorized for such purpose! ritical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered
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