Marketing Information BSM 50 GD 170 DL

Transcription

1 European Power- Semiconductor and Electronics Company Marketing Information BSM GD 17 DL x 19.5 = x1. 5 x = connections to be made externally

2 BSM GD 17 DL vorläufige Daten Höchstzulässige Werte / Maximum rated values preliminary data Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage V CES 17 V Kollektor-Dauergleichstrom DC-collector current T C = 8 C I C,nom. A T C = 25 C I C A Periodischer Kollektor Spitzenstrom repetitive peak collector current t p = 1 ms, T C = 8 C I CRM A Gesamt-Verlustleistung total power dissipation T C = 25 C, Transistor P tot 48 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES ± V Dauergleichstrom DC forward current I F A Periodischer Spitzenstrom repetitive peak forw. current t p = 1 ms I FRM A Grenzlastintegral der Diode I 2 t - value, Diode V R = V, t p = ms, T Vj = 125 C I 2 t 1 A 2 s Isolations-Prüfspannung insulation test voltage RMS, f = Hz, t = 1 min. V ISOL 3,4 kv Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage I C = A, V GE = 15V, T vj = 25 C v CE sat - 2,7 3,3 V I C = A, V GE = 15V, T vj = 125 C - 3,2 - V Gate-Schwellenspannung gate threshold voltage I C = 2,5mA, V CE = V GE, T vj = 25 C v GE(th) 4,5 5,5 6,5 V Eingangskapazität input capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies - 3,5 - nf Kollektor-Emitter Reststrom collector-emitter cut-off current V CE = 17V, V GE = V, T vj = 25 C I CES -,2,1 ma V CE = 17V, V GE = V, T vj = 125 C - 1,5 - ma Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = V, T vj = 25 C I GES - - na Einschaltverzögerungszeit (induktive Last) turn-on delay time (inductive load) I C = A, V CE = 9V t d,on V GE = ±15V, R G = Ω, T vj = 25 C -,1 - µs V GE = ±15V, R G = Ω, T vj = 125 C -,1 - µs Anstiegszeit (induktive Last) rise time (inductive load) I C = A, V CE = 9V t r V GE = ±15V, R G = Ω, T vj = 25 C -,1 - µs V GE = ±15V, R G = Ω, T vj = 125 C -,1 - µs Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) I C = A, V CE = 9V t d,off V GE = ±15V, R G = Ω, T vj = 25 C -,8 - µs V GE = ±15V, R G = Ω, T vj = 125 C -,9 - µs Fallzeit (induktive Last) fall time (inductive load) I C = A, V CE = 9V t f V GE = ±15V, R G = Ω, T vj = 25 C -,3 - µs V GE = ±15V, R G = Ω, T vj = 125 C -,3 - µs Einschaltverlustenergie pro Puls turn-on energy loss per pulse I C = A, V CE = 9V, V GE = 15V E on R G = Ω, T vj = 125 C, L S = nh mws Abschaltverlustenergie pro Puls turn-off energy loss per pulse I C = A, V CE = 9V, V GE = 15V E off R G = Ω, T vj = 125 C, L S = nh - 14,5 - mws Kurzschlußverhalten SC Data t P µsec, V GE 15V, R G = Ω I SC T Vj 125 C, V CC =V - - A V CEmax =V CES -L sce x di/dt Modulinduktivität stray inductance module L sce nh Charakteristische Werte / Characteristic values: Diode Durchlaßspannung forward voltage I F = A, V GE = V, T vj = 25 C V F - 2,2 2,6 V I F = A, V GE = V, T vj = 125 C V Rückstromspitze peak reverse recovery current I F = A, - di F /dt = 7A/µsec I RM V R = 9V, V GE = -V, T vj = 25 C A V R = 9V, V GE = -V, T vj = 125 C A Sperrverzögerungsladung recovered charge I F = A, - di F /dt = 7A/µsec Q r V R = 9V, V GE = -V, T vj = 25 C µas V R = 9V, V GE = -V, T vj = 125 C µas Abschaltenergie pro Puls reverse recovery energy I F = A, - di F /dt = 7A/µsec E rec V R = 9V, V GE = -V, T vj = 25 C mws V R = 9V, V GE = -V, T vj = 125 C mws Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC R thjc - -,26 K/W Diode / diode, DC - -,56 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Module / per Module R thck d Paste µm / d grease µm - -,11 K/W Höchstzul. Sperrschichttemperatur max. junction temperature T vj C Betriebstemperatur operating temperature T op C Lagertemperatur storage temperature T stg C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al 2 O 3 Kriechstrecke creepage distance 16 mm Luftstrecke clearance 11 mm CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung mounting torque max. 5 Nm Gewicht weight G g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.

3 I C ,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, BSM GD 17 DL / 1 I C BSM GD 17 DL / 2 VGE = 19V VGE = 15V VGE = 13V VGE = 11V VGE = 9V BSM GD 17 DL,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, Bild / Fig. 1 Ausgangskennlinie (typisch) / Output characteristic (typical) I C = f(v CE ) V GE = 15V Bild / Fig. 2 Ausgangskennlinienfeld (typisch) / Output characteristic (typical) I C = f(v CE ) T vj = 125 C I C I F ,,5 1, 1,5 2, 2,5 3, BSM GD 17 DL / 3 V GE [V] BSM GD 17 DL / 4 V F [V] Bild / Fig. 3 Übertragungscharakteristic (typisch) / Transfer characteristic (typical) I C = f(v GE ) V CE = V Bild / Fig. 4 Durchlaßkennlinie der Inversdiode (typisch) / Forward characteristic of inverse diode (typical) I F = f(v F ) 9 E [mj] 8 7 Eoff Eon Erec E [mj] Eoff Eon Erec BSM GD 17 DL / 5 I C BSM GD 17 DL / 6 R G [Ω] Bild / Fig. 5 Schaltverluste (typisch) / Switching losses (typical) E on = f(i C ), E off = f(i C ), E rec = f(i C ) R gon = R goff = Ω, V CE = 9V, T j = 125 C Bild / Fig. 6 Schaltverluste (typisch) / Switching losses (typical) E on = f(r G ), E off = f(r G ), E rec = f(r G ) I C = A, V CE = 9V, T j = 125 C

4 I C IC,Modul IC,Chip BSM GD 17 DL / 7 BSM GD 17 DL Bild / Fig. 7 Sicherer Arbeitsbereich (RBSOA) / Reverse bias safe operation area (RBSOA) R g = Ω, T vj = 125 C

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