mA Volt
|
|
- Victor Haynes
- 5 years ago
- Views:
Transcription
1 etaile solution of IS 4 (C) Conventional Paer I Sol. (a) (i) Conuctivity is a egree to which a secifie material conucts electricity an gives iea how much smooth flow is of electricity by a carrier. Mobility is egree to which secifie material can move freely an easily an it gives iea about ability of movement of a carrier. (ii) Zener break own occurs in highly oe Zener ioe an it is ue to tunneling henomenon while Avalanche breakown occurs in lightly oe Zener ioe an it is avalanche multilication ue to successive collisions of electrons in eletion region of Zener ioe. Zener occurs at smaller value of break own voltage while avalanche occurs at higher value of break own voltage. (iii) Piezo-electric materials which are insulators become electrically olarize in resence of mechanical stress an rouce voltage which is reversible rocess. Ceramic materials are in organic materials an are combination of metal an non metals which are generally forme by action of heat an subsequent cooling. (iv) irect ban ga: k Minima of C.B coincies with Maxima of VB an here energy is emitte in form of light by hotons Inirect ban ga: k Minima of C.B oes not coincies with Maxima of VB an here energy is emitte in form of heat. (v) Polarisability is the ability of molecules to be olarize an exress as iole moment er unit electric Fiel. Permittivity is the measure of resistance which is encountere when forming an electric fiel in a meium. Unit of olarisability is F-m while ermittivity has no unit. Sol: (b) (i) Given conition that NMOS is in Saturation region I K V V VGS.V &VT V GS T Then I. 3. =.96 ma which is nearly equal to ma I (ii) g KV V m GS T Vgs 3 gm.. =.76mA / V (iii) If V I = mv then new V GS =. Volt so transistor will still remains in saturation region Sol.(c): 3 = I K V V GS T...956mA Outut voltage V V RI 9.956mA 7.Volt W Vj q NA N Since NA N so N N A
2 So here W Vj qn A But qn so W A V j Sol.() : To synthesize a riving oint immittance function z(s) the first ste is to ecomose it into a sum of simler ositive real functions z (s), z (s), z 3 (s), z 4 (s),. z n (s), an then to synthesize these iniviual z(s) as elements of the overall network whose riving oint imeance is z(s). A function is sai to be ositive real function if it satisfies the following conitions:. F(s) is real for real s i.e F(σ) is real. F(s) may have only simle oles on the jw axis with real an ositive resiues 3. ReF(jw) for all w 6 s 3 s Zs 6 s s 6 s (s 6) Sol.(e): t t h t e ut, xt e ut Xs.H s Y s Ys s s t t y t e u t e u t Sol.(f): when clock is high comlete circuit resons similarly to an OPMAP in unity gain feeback configuration when clock is low inut voltage at that time is store on caacitor. By use of OPAMP in feeback loo inut imeance of samle an hol circuit is greatly increase. Figure: CLK + V in C Hol V out Sol. (g): Proagation constant (P) R jlg j C As frequency is not mentione so roblem can t be solve Sol. (h): It is a transucer which uses change in the electrical resistance to measure strain. Here electrical resistance is roortional to instantaneous satial average strain over its surface. Alications :. Vibration measurement. Comression an tension measurement 3. Contractions in muscles in meical science 4. Bloo ressure measurement 5. Use in volumetric ifferential low ressure
3 Temerature comensation in strain gauge: Active gauge Force R ummy or comensating gauge R The active strain gauge is installe on the test secimen while the ummy or comensating gauge is installe on a like iece of material an is not secifie to strain. Sol. 3(a) As n n i n N N but A NA n N n n N n N N 4n n i But n cannot be negative so N n As i i n N N ni 4 ni n N N n i n i can be neglecte. Sol. 3(b) V N N 4ni N neglecting ni N n i V + + 5V 3
4 is R.B an Non conucting is F.B but Non conucting is not in breakown as V B = 5 V but 5 V V Both ioes are in series, in reverse current will flow from N to P while in current will flow from P to N so here I I V VT I I e V VT n = mv=.3466 Volt So here V 5 V V light Sol. 3(c) t n tye S.C x < x > x = cm since it is N-tye SC so major change will be in concentration of holes only an not electrons. Here given So t 3 HP / cm / sec 6 5 / cc n here, x = 34.6 m here; Initially in N tye s.c, holes are minority an only contribution which is ominant is after the following of light. So x = 34.6 m J A/m 3 An I J area I Now, Initially Now Then n ma n N 5 3 n / cm 4.5 /cm 5 3 Change in e is n ' / cm Thus Alying continuity equation. Now, Jn q x Jn am / m I J A n In n 9.376mA 3 4
5 Sol. 3. () VCC V, VC V, V 6V, S,, IC 5mA R R V cc R c R R C V CC V T R e R R Now V Sol. 3.(e) s R R R RI I As C B R.k I ; ' ' is very high Then V V I R R RC.k CC C C C s R R R B TH R.365k RR Now,.365k R R R R R S V V R R I I R T B R Then; R R.349 RR R R.365 R 3.545k R 7.46k B Initially T is switch off then caacitor get charge to V in steay state. So caacitor is charge to Volt. at t= caacitor voltage will remain at volt Now T becomes ON by 4 volt Here V S = Volt an V GS =4 Volt so MOSFT will be relace by resistance then r s on g r g 3 where m m g K V V 5 ma / V m GS T rs 5 Now r s an C will be in arallel an caacitor will ischarge through r s ma / V t/ t/ V(t) V e 5 e where 5 s t ln 5.693s 3466 sec 3.47 n sec 5
6 Sol. 4(a) Sol.4(b) Z transform offers significant avantage relative to time omain roceures. By this we can moel iscrete time hysical systems with linear ifferential equations with constant coefficients one examle is linear time variant igital filter. The Z transform of a ifference equation gives us a goo escrition of the characteristics of the equation an hence of hysical system. In aition transforme ifference equations are algebraic an therefore easier to maniulate. k The Z transform of a samle signal or sequence is efine as : Ys Ys Ys s s s 3s s 3s s s t t y t e u t e u t ( There is misrint in this question) Z f (kt) f (kt)z k Sol.4() B V N only ucate B both V only voters N None Probability of eucate = 4/ Probability of both = Probability of voters = 5 B V N % V B 4% B % B 5% = 3% V = % N= 3% (i) PVoter (ii) / ucate 4 / Not eucate / P Voter 5 / 5 6
7 Sol.4(e) Sol.5(a) (iii) 3 3 P N By uality theorem F f f t F t sgn t j sgn jt s sgn jt s V I I Sol.5.(b) Alying KVL in loo / s I si I I () I,I are in 's' omain Alying KVL in loo si I I I I s I Put () in () I / 3 5 / 3 5 s s 3 s 3t t i t e 5e u t.() It is a arallel arallel combination hence total Y arameter will be ae. [Y] [Y] Y Y Y 7
8 sol.5(c) / 3 / 3 Y / 3 / 3 / 3 / 3 Similarly Y / 3 / 3 4 / 3 / 3 / 3 4 / 3 So Y Y Y So over all Y arameter of above network is : R R R I + + I I + U Y + L Y = Sol. 6 (a) V R 3 V R R I R I ----() 3 3 V R R I R R I ----() 3 3 We gate Z R R, Z R V 3 3 Z R R, Z R R Z As Z 3 3 Z so network is not recirocal. R R3 R3 R R3 R R 3 5 Charge ensity c / m 5 q xx q 4 x 6 x5 x x 4 x 6. N / C F Q. 5. F 9N Sol. 6(b) x 6 6 Q Q V a h h where Q 4 9 V a h h Volt x x
9 where r 5m 9 Q 4nC 4 C Potential V Q 4 r V 9 V 7V 5 Sol.6(c) 5m, Z 3 3m z 5 f 5MHz c 3 6m 6 f 5 6 Length of quarter wave line = =.5m 4 4 Characteristic imeance Z Z.Z 35 Z.3 Z Z Reflection coefficient Z Z VSWR 3 Sol.6() VSWR a b =.3 cm. cm Oerating frequency f =.5 f c Guie wave length g =?, Phase velocity v =? As So a b first five moes will be T, T, T,T an T Cut of frequency f c r r c m n a b For T moe c fc T.3 f.5f c GHz c cm 9 f 9.7 = 6.5 GHz 9
10 g 3.67 fc f c f.5fc 3.67 g 4.cm.7453 v f g 9 v m / s v 4.4 m / s Similarly we calculate guie wavelength ( g ) & hase velocity (v ) for next moes g Moe Guie wavelength Phase velocity v T 4.cm 4. m / s T.6cm 4. m / s T.79cm 4. m / s T.64cm 4. m / s T.9cm 4. m / s Sol.7(a) (i) Absolute error= Actual value-measure value =-= ma (ii) Percentage error = Absoluteerror % %.% Measure value Actual value (iii)relative Accuracy = Absoluteerror Actual value (iv) Percentage accuracy =9% =.9 (v) Precision= Sol. 7(b) Total eflection in beam is given by ev L L ms v where eva v m Here s is searation between eflecting lates an s=5mm Here is istance of screen from centre of lates an =3 cm Here L is length of each eflecting late an L= cm Here =3 cm an V shoul be calculate ev v m 9 9 ev L L ms v 9 a 5 3
11 V L L s V a V Solve V from here an that will be answer : Sol. 7(c) Given R 4k, R4 Sol.7() RT R T ex T T R R ex So er º K R R ex Now 5 R An for R R R ex R So range of resistance 569. to Given, A.5cm.5 m Searation 4 3mm 3 3 m 4 P N / m, eflection =.3 mm = C = 3 PF Caacitance after a ressure of 4 N/m A C A 3PF 3 3 A 3PF3 C' x 3.3 C' PF m
P-MOS Device and CMOS Inverters
Lecture 23 P-MOS Device and CMOS Inverters A) P-MOS Device Structure and Oeration B) Relation of Current to t OX, µ V LIMIT C) CMOS Device Equations and Use D) CMOS Inverter V OUT vs. V IN E) CMOS Short
More informationLecture 2. OUTLINE Basic Semiconductor Physics (cont d) PN Junction Diodes. Reading: Chapter Carrier drift and diffusion
Lecture 2 OUTLIE Basic Semiconductor Physics (cont d) Carrier drift and diffusion P unction Diodes Electrostatics Caacitance Reading: Chater 2.1 2.2 EE105 Sring 2008 Lecture 1, 2, Slide 1 Prof. Wu, UC
More informationCHAPTER: 2 ELECTROSTATIC POTENTIAL AND CAPACITANCE
CHAPTER: 2 ELECTROSTATIC POTENTIAL AND CAPACITANCE. Define electric potential at a point. *Electric potential at a point is efine as the work one to bring a unit positive charge from infinity to that point.
More information( ) Laboratory 6 Impedance measurements rev 6e
Laboratory 6 meance measurements rev 6e Goal: meance measurements using the irect metho, with the LCmeter, or the inirect metho, using the DC brige. Fig. b. The series (left) an the arallel (right) circuit
More informationRobust Control of Robot Manipulators Using Difference Equations as Universal Approximator
Proceeings of the 5 th International Conference of Control, Dynamic Systems, an Robotics (CDSR'18) Niagara Falls, Canaa June 7 9, 218 Paer No. 139 DOI: 1.11159/csr18.139 Robust Control of Robot Maniulators
More informationReview Outline. 1. Chapter 1: Signals and Amplifiers. 2. Chapter 3: Semiconductors. 3. Chapter 4: Diodes. EE 3110 Microelectronics I
Review Outline 1 1. Chater 1: Signals and Amlifiers 2. Chater 3: Semiconductors 3. Chater 4: Diodes 1.1 Signals Signal contains information e.g. voice of radio announcer reading the news 2 Transducer device
More informationdn i where we have used the Gibbs equation for the Gibbs energy and the definition of chemical potential
Chem 467 Sulement to Lectures 33 Phase Equilibrium Chemical Potential Revisited We introduced the chemical otential as the conjugate variable to amount. Briefly reviewing, the total Gibbs energy of a system
More informationAlpha Particle scattering
Introuction Alpha Particle scattering Revise Jan. 11, 014 In this lab you will stuy the interaction of α-particles ( 4 He) with matter, in particular energy loss an elastic scattering from a gol target
More informationC C. κ κ A C 0. A d. κ κ. A d A 3. d A. κ κ (1)
7 icture the roblem We can moel this system as two caacits in series, of thickness / an of thickness / an use the uation f the uivalent caacitance of two caacits connecte in series. xress the uivalent
More informationFET ( Field Effect Transistor)
NMO MO NMO MO Enhancement eletion Enhancement eletion N kanál Transistors tyes Field effect transistors Electronics and Microelectronics AE4B34EM MOFET MEFET JFET 7. ecture Uniolar transistor arameters
More informationGATE SOLVED PAPER - EC
03 ONE MARK Q. In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is (A) injection, and subsequent diffusion and recombination of minority carriers
More information1. Radiative transfer with emission. Atmosphere and surfaces emit infrared and microwave radiation. Recall the Beer-Bouguer-Lambert law for emission
Lecture 8. Princiles of assive remote sensing using emission an alications: Remote sensing of atmosheric ath-integrate quantities clou liqui water content an reciitable water vaor.. Raiative transfer with
More informationDischarge initiation and plasma column formation in aspect ratio A=2 tokamak.
Discharge initiation an lasma column formation in asect ratio A toama... Khayrutinov E.A. Azizov, A.D. Baralov, G.G.Glaush, I.L.Taibaeva, Ph.W.West 3 Troits, Moscow eg., ussia NNC, K 3 General Atomics,
More informationECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)
ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationThe thermal wind 1. v g
The thermal win The thermal win Introuction The geostrohic win is etermine by the graient of the isobars (on a horizontal surface) or isohyses (on a ressure surface). On a ressure surface the graient of
More informationColin Cameron: Brief Asymptotic Theory for 240A
Colin Cameron: Brief Asymtotic Theory for 240A For 240A we o not go in to great etail. Key OLS results are in Section an 4. The theorems cite in sections 2 an 3 are those from Aenix A of Cameron an Trivei
More informationAIEEE Physics Model Question Paper
IEEE Physics Moel Question Paper ote: Question o. 11 to 1 an 1 to consist of Eight (8) marks each for each correct response an remaining questions consist of Four (4) marks. ¼ marks will be eucte for inicating
More information5. THERMAL CONVERSION OF SOLAR RADIATION. Content
5. Introuction 5. THEMAL CONVESION OF SOLA ADIATION Content 5. Introuction 5. Collectors without concentration 5.. Otical efficiency of the flat collector 5.. Thermal efficiency of the flat collector 5..3
More informationThe extreme case of the anisothermal calorimeter when there is no heat exchange is the adiabatic calorimeter.
.4. Determination of the enthaly of solution of anhydrous and hydrous sodium acetate by anisothermal calorimeter, and the enthaly of melting of ice by isothermal heat flow calorimeter Theoretical background
More informationUNIT 4:Capacitors and Dielectric
UNIT 4:apacitors an Dielectric SF7 4. apacitor A capacitor is a evice that is capable of storing electric charges or electric potential energy. It is consist of two conucting plates separate by a small
More informationElectronic Devices and Circuit Theory
Instructor s Resource Manual to accompany Electronic Devices an Circuit Theory Tenth Eition Robert L. Boylesta Louis Nashelsky Upper Sale River, New Jersey Columbus, Ohio Copyright 2009 by Pearson Eucation,
More informationUnit-3. Question Bank
Unit- Question Bank Q.1 A delta connected load draw a current of 15A at lagging P.F. of.85 from 400, -hase, 50Hz suly. Find & of each hase. Given P = = 400 0 I = 15A Ans. 4.98, 5.7mH So I P = 15 =8.66A
More informationCAPACITANCE: CHAPTER 24. ELECTROSTATIC ENERGY and CAPACITANCE. Capacitance and capacitors Storage of electrical energy. + Example: A charged spherical
CAPACITANCE: CHAPTER 24 ELECTROSTATIC ENERGY an CAPACITANCE Capacitance an capacitors Storage of electrical energy Energy ensity of an electric fiel Combinations of capacitors In parallel In series Dielectrics
More informationPARALLEL-PLATE CAPACITATOR
Physics Department Electric an Magnetism Laboratory PARALLEL-PLATE CAPACITATOR 1. Goal. The goal of this practice is the stuy of the electric fiel an electric potential insie a parallelplate capacitor.
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The evices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationTHE FIRST LAW OF THERMODYNAMICS
THE FIRST LA OF THERMODYNAMIS 9 9 (a) IDENTIFY and SET UP: The ressure is constant and the volume increases (b) = d Figure 9 Since is constant, = d = ( ) The -diagram is sketched in Figure 9 The roblem
More informationTwo Dimensional Numerical Simulator for Modeling NDC Region in SNDC Devices
Journal of Physics: Conference Series PAPER OPEN ACCESS Two Dimensional Numerical Simulator for Moeling NDC Region in SNDC Devices To cite this article: Dheeraj Kumar Sinha et al 2016 J. Phys.: Conf. Ser.
More informationECE PN Junctions and Diodes
ECE 342 2. PN Junctions and iodes Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 342 Jose Schutt Aine 1 B: material dependent parameter = 5.4 10
More informationCharacterizing the Behavior of a Probabilistic CMOS Switch Through Analytical Models and Its Verification Through Simulations
Characterizing the Behavior of a Probabilistic CMOS Switch Through Analytical Models and Its Verification Through Simulations PINAR KORKMAZ, BILGE E. S. AKGUL and KRISHNA V. PALEM Georgia Institute of
More information200kW HIGH FREQUENCY PRESS FOR DIELECTRIC HEATING. J. Tomljenovic
200kW HIGH FREQUENCY PRESS FOR DIELECTRIC HEATING J. Tomljenovic Plustherm Point GmbH Seminarstrasse 102, 5430 Wettingen, Switzerland ABSTRACT Uon introduction, the wood industry was hesitant to utilize
More informationColin Cameron: Asymptotic Theory for OLS
Colin Cameron: Asymtotic Theory for OLS. OLS Estimator Proerties an Samling Schemes.. A Roama Consier the OLS moel with just one regressor y i = βx i + u i. The OLS estimator b β = ³ P P i= x iy i canbewrittenas
More informationCHAPTER 33. Answer to Checkpoint Questions
CHAPTE 33 ELECTOMAGNETIC OSCILLATIONS 887 CHAPTE 33 Answer to Checkoint Questions. (a) T; (b) T ; (c) T; (d) T4. (a) 5 V; (b) 50 J 3. (a) ; (b) 4. (a) C, B, A; (b) A, B, 3 S, 4 C; (c) A 5. (a) increases;
More informationGoal of this chapter is to learn what is Capacitance, its role in electronic circuit, and the role of dielectrics.
PHYS 220, Engineering Physics, Chapter 24 Capacitance an Dielectrics Instructor: TeYu Chien Department of Physics an stronomy University of Wyoming Goal of this chapter is to learn what is Capacitance,
More informationChapter 20: Exercises: 3, 7, 11, 22, 28, 34 EOC: 40, 43, 46, 58
Chater 0: Exercises:, 7,,, 8, 4 EOC: 40, 4, 46, 8 E: A gasoline engine takes in.80 0 4 and delivers 800 of work er cycle. The heat is obtained by burning gasoline with a heat of combustion of 4.60 0 4.
More informationHEAT, WORK, AND THE FIRST LAW OF THERMODYNAMICS
HET, ORK, ND THE FIRST L OF THERMODYNMIS 8 EXERISES Section 8. The First Law of Thermodynamics 5. INTERPRET e identify the system as the water in the insulated container. The roblem involves calculating
More informationDigital Integrated Circuits
Digital Integrated ircuits YuZhuo Fu contact:fuyuzhuo@ic.sjtu.edu.cn Office location:47 room WeiDianZi building,no 800 Donghuan road,minhang amus Introduction Digital I 3.MOS Inverter Introduction Digital
More informationCENTURION UNIVERSITY OF TECHNOLOGY & MANAGEMENT,ODISHA CUEE-2015
CENTURION UNIVERSITY OF TECHNOLOGY & MANAGEMENT,ODISHA CUEE-015 PHYSICS 1. The imensional formula of angular momentum is a) ML T - b) MLT - c) MLT -1 ) ML T -1. If A B = B A, then the angle between A an
More informationCharge-Pump Phase-Locked Loops
Phase-Locked Loos Charge-Pum Phase-Locked Loos Ching-Yuan Yang National Chung-Hsing University Deartment of Electrical Engineering Concetual oeration of a hase-frequency detector (PFD) PFD 5- Ching-Yuan
More information[ ] [ ] Chapter 16 Problem Solutions (a) = = = = Then 8 = 2(0.343) + V 2(0.343)
Chater 6 Problem Solutions 6. (a) e N Δ V φ + V φ s a TN f SB f C ax 4 ax (3.9)(8.85 ) 8 ax 7.67 8 tax 45 / 9 4 5 8 e s Na.6.7 8.85 8 5.5 C Then 8 5.5 Δ VTN (.343) + V (.343) 8 SB 7.67 For V V : SB Δ VTN.67.686.686
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 2017 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2017 Khanna Lecture Outline! Semiconductor Physics " Band gaps "
More informationFIELD-EFFECT TRANSISTORS
FIEL-EFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancement-type N-MOS transistor 3 I-V characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation
More informationFeedback-error control
Chater 4 Feedback-error control 4.1 Introduction This chater exlains the feedback-error (FBE) control scheme originally described by Kawato [, 87, 8]. FBE is a widely used neural network based controller
More informationEC Objective Paper I (Set - D)
EC-Objective Paper-I ESE-5 www.gateforum.com EC Objective Paper I (Set - D). If a system produces frequencies in the output are not present in the input, then the system cannot be Minimum phase system
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldsto technology with soft, fast recovery antiarallel Emitter Controlled HE diode Features Very low V CE(sat) 1.5V (ty.) Maximum Junction Temerature 175 C Short
More informationPhase transition. Asaf Pe er Background
Phase transition Asaf Pe er 1 November 18, 2013 1. Background A hase is a region of sace, throughout which all hysical roerties (density, magnetization, etc.) of a material (or thermodynamic system) are
More informationVLSI Design Issues. ECE 410, Prof. F. Salem/Prof. A. Mason notes update
VLSI Design Issues Scaling/Moore s Law has limits due to the hysics of material. Now L (L=20nm??) affects tx delays (seed), noise, heat (ower consumtion) Scaling increases density of txs and requires more
More informationFrom last time. Attention. Capacitance. Spherical capacitor. Energy stored in capacitors. How do we charge a capacitor? Today:
Attention From last time More on electric potential an connection to Efiel How to calculate Efiel from V Capacitors an Capacitance switch off computers in the room an be prepare to a very lou noise Toay:
More informationConvergence Analysis of Terminal ILC in the z Domain
25 American Control Conference June 8-, 25 Portlan, OR, USA WeA63 Convergence Analysis of erminal LC in the Domain Guy Gauthier, an Benoit Boulet, Member, EEE Abstract his aer shows how we can aly -transform
More informationEE 508 Lecture 13. Statistical Characterization of Filter Characteristics
EE 508 Lecture 3 Statistical Characterization of Filter Characteristics Comonents used to build filters are not recisely redictable L C Temerature Variations Manufacturing Variations Aging Model variations
More informationIXBT20N360HV IXBH20N360HV
High Voltage, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advance Technical Information V CS = V = A V C(sat).V TO-HV (IXBT) Symbol Test Conditions Maximum Ratings V CS = C to C V V CGR = C
More informationDesign Constraint for Fine Grain Supply Voltage Control LSI
ASP-DAC 211 Designer s Forum Session 8D-3: State-of-The-Art SoCs and Design Methodologies Design Constraint for Fine Grain Suly Voltage Control LSI January 28, 211 Atsuki Inoue Platform Technologies Laboratories
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
More informationMicroelectronic Circuit Design Fourth Edition - Part I Solutions to Exercises
Page Microelectronic Circuit esign Fourth Edition - Part I Solutions to Exercises CHAPTER V LSB 5.V 0 bits 5.V 04bits 5.00 mv V 5.V MSB.560V 000000 9 + 8 + 4 + 0 785 0 V O 785 5.00mV or ) 5.V 3.95 V V
More informationANALYTICAL MODEL FOR DYNAMIC AVALANCHE. Universitat der Bundeswehr Munchen, Germany. *Siemens AG, Corporate Technology, Munich, Germany
ANALYTICAL MODEL FOR DYNAMIC AVALANCHE BREAKDOWN IN POWER DEVICES L. Gohler J. Sigg* Universitat der Bundeswehr Munchen Germany *Siemens AG Cororate Technology Munich Germany Abstract. The behaviour of
More informationIntroduction to the Vlasov-Poisson system
Introuction to the Vlasov-Poisson system Simone Calogero 1 The Vlasov equation Consier a particle with mass m > 0. Let x(t) R 3 enote the position of the particle at time t R an v(t) = ẋ(t) = x(t)/t its
More informationChoice of V t and Gate Doping Type
Choice of V t and Gate Doping Type To make circuit design easier, it is routine to set V t at a small positive value, e.g., 0.4 V, so that, at V g = 0, the transistor does not have an inversion layer and
More informationLecture contents. Metal-semiconductor contact
1 Lecture contents Metal-semiconuctor contact Electrostatics: Full epletion approimation Electrostatics: Eact electrostatic solution Current Methos for barrier measurement Junctions: general approaches,
More informationCET PHYSICS 2011 VERSION CODE: A 4
dislacement CET PHYSICS 0 VERSION CODE: 4. If C be the caacitance and V be the electric otential, then the dimensional formula of CV is ) M L T ) M 0 L T 0 ) M L T 4) M L T 0 CV Energy The dimentional
More informationMotion and Recombination of Electrons and Holes
Chater Motion and Recombination of Electrons and Holes OBJECTIVES. Understand how the electrons and holes resond to an electric field (drift).. Understand how the electrons and holes resond to a gradient
More informationMake sure the exam paper has 8 pages plus an appendix page at the end.
UNIVERSITY OF CALIFORNIA College of Engineering Deartment of Electrical Engineering and Comuter Sciences Fall 2000 EE143 Midterm Exam #1 Family Name First name Signature Make sure the exam aer has 8 ages
More informationWhy are we interested in aerosols?
Chemistry an Aerosols Bernhar Vogel Chemistry an Aerosol bernhar.vogel@kit.eu Why are we intereste in aerosols? Aerosols have an imact on human health, BUT they have also an imact on climate an weather.
More informationinduced _ electric _ field = = = = σ V
The Figure shows that the open-circuit voltage V (an hence the fiel strength ) is proportional to compressive stress T up to a maximum of 5 kv, which occurs at a stress of 50 MPa. Inuce electrical fiel
More informationrate~ If no additional source of holes were present, the excess
DIFFUSION OF CARRIERS Diffusion currents are resent in semiconductor devices which generate a satially non-uniform distribution of carriers. The most imortant examles are the -n junction and the biolar
More informationECE341 Test 2 Your Name: Tue 11/20/2018
ECE341 Test Your Name: Tue 11/0/018 Problem 1 (1 The center of a soli ielectric sphere with raius R is at the origin of the coorinate. The ielectric constant of the sphere is. The sphere is homogeneously
More informationChapter 12: Three-Phase Circuits
Chater 1: Three-Phase Circuits 1.1 ntroduction 1. Balanced Three-Phase oltages 1.3 Balanced Wye-Wye connection 1.4 Balanced Wye-Delta Connection 1.7 Power in a Balanced System 1.1 NTRODUCTON A single-hase
More informationOil Temperature Control System PID Controller Algorithm Analysis Research on Sliding Gear Reducer
Key Engineering Materials Online: 2014-08-11 SSN: 1662-9795, Vol. 621, 357-364 doi:10.4028/www.scientific.net/kem.621.357 2014 rans ech Publications, Switzerland Oil emerature Control System PD Controller
More informationGATE 2017 ECE Session 3 Answer Key
1. Three pair cubical dice are thrown simultaneously. What is the probability that all three dice have same number is... Ans. ( 1 36 ). The one of the eigen value is real, rest are imaginary the real value
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More information25. Optical properties of materials-metal
5. Otical roerties of materials-metal Drue Moel Conuction Current in Metals EM Wave Proagation in Metals Sin Deth Plasma Frequency Drue moel Drue moel : Lorenz moel (Harmonic oscillator moel) without restoration
More informationinflow outflow Part I. Regular tasks for MAE598/494 Task 1
MAE 494/598, Fall 2016 Project #1 (Regular tasks = 20 points) Har copy of report is ue at the start of class on the ue ate. The rules on collaboration will be release separately. Please always follow the
More informationFE FORMULATIONS FOR PLASTICITY
G These slides are designed based on the book: Finite Elements in Plasticity Theory and Practice, D.R.J. Owen and E. Hinton, 1970, Pineridge Press Ltd., Swansea, UK. 1 Course Content: A INTRODUCTION AND
More informationApplication of Automated Ball Indentation for Property Measurement of Degraded Zr2.5Nb
Journal of Minerals & Materials Characterization & Engineering, Vol. 10, No.7,.661-669, 011 jmmce.org Printed in the USA. All rights reserved Alication of Automated Ball Indentation for Proerty Measurement
More informationChapter 1 Fundamentals
Chater Fundamentals. Overview of Thermodynamics Industrial Revolution brought in large scale automation of many tedious tasks which were earlier being erformed through manual or animal labour. Inventors
More informationMultiple Resonance Networks
4 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: FUNDAMENTAL THEORY AND APPLICATIONS, VOL 49, NO, FEBRUARY [4] Y-Y Cao, Y-X Sun, and J Lam, Delay-deendent robust H control for uncertain systems with time-varying
More informationSetting up the Mathematical Model Review of Heat & Material Balances
Setting u the Mathematical Model Review of Heat & Material Balances Toic Summary... Introduction... Conservation Equations... 3 Use of Intrinsic Variables... 4 Well-Mixed Systems... 4 Conservation of Total
More informationLecture 04 Review of MOSFET
ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D
More information1.1 An excitation is applied to a system at t = T and its response is zero for < t < T. Such a system is (a) non-causal system.
. An excitation is applied to a system at t = T and its response is zero for < t < T. Such a system is (a) non-causal system x(t) (b) stable system (c) causal system (d) unstable system t=t t. In a series
More informationApplication of Measurement System R&R Analysis in Ultrasonic Testing
17th Worl Conference on Nonestructive Testing, 5-8 Oct 8, Shanghai, China Alication of Measurement System & Analysis in Ultrasonic Testing iao-hai ZHANG, Bing-ya CHEN, Yi ZHU Deartment of Testing an Control
More informationESE 570 MOS TRANSISTOR THEORY Part 1. Kenneth R. Laker, University of Pennsylvania, updated 5Feb15
ESE 570 MOS TRANSISTOR THEORY Part 1 TwoTerminal MOS Structure 2 GATE Si Oxide interface n n Mass Action Law VB 2 Chemical Periodic Table Donors American Chemical Society (ACS) Acceptors Metalloids 3 Ideal
More informationELECTRONIC DEVICES MOSFET METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR. Piotr Dziurdzia, Ph.D
014-05-13 AH NVERY OF ENE AN EHNOLOY M. ANŁAWA AZA W KRAKOWE Faculty of omuter cience, Electronics and elecommunications EPARMEN OF ELERON ELERON EVE Piotr ziurdzia, Ph.. -3, room 413; tel. 617-7-0, Piotr.ziurdzia@agh.edu.l
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationFinal Exam Study Guide and Practice Problems Solutions
Final Exam Stuy Guie an Practice Problems Solutions Note: These problems are just some of the types of problems that might appear on the exam. However, to fully prepare for the exam, in aition to making
More informationLecture #11. Lecture
Lecture #11 Semiconductor Diodes and Basic Circuits Outline/Learning Objectives: Simple circuits using ideal diode model, constant voltage drop model, and mathematical (exponential) model. Use of graphical
More informationLecture 7. Drift and Diffusion Currents. Reading: Pierret
Lecture 7 Drift and Diffusion Currents Reading: Pierret 3.1-3.2 Ways Carriers (electrons and holes) can change concentrations Current Flow: Drift: charged article motion in resonse to an electric field.
More informationNew Zealand Institute of Physics
New Zealan Institute of Physics ASSESSMENT SCHEDULE Physics Level 2 90258 v2 Demonstrate unerstaning of physics in an integrate context Note: Minor computational errors will not be penalise. A wrong answer
More informationThe Effect of a Finite Measurement Volume on Power Spectra from a Burst Type LDA
The Effect of a Finite Measurement Volume on Power Sectra from a Burst Tye LDA Preben Buchhave 1,*, Clara M. Velte, an William K. George 3 1. Intarsia Otics, Birkerø, Denmark. Technical University of Denmark,
More informationIXFH42N65X2A V DSS = 650V I D25. X2-Class HiPerFET TM Power MOSFET. = 42A 72m. Advance Technical Information. R DS(on) AEC Q101 Qualified
Advance Technical Information X2-Class HiPerFET TM Power MOSFET AEC Q Qualified N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode IXFH42N5X2A V SS = 5V I 25 = 42A 72m R S(on) TO-247 Symbol
More information7. Introduction to Large Sample Theory
7. Introuction to Large Samle Theory Hayashi. 88-97/109-133 Avance Econometrics I, Autumn 2010, Large-Samle Theory 1 Introuction We looke at finite-samle roerties of the OLS estimator an its associate
More informationScattering matrix of the interface
Scattering matrix of the interface Let us consider a generalied version of the roblem: when waves are incident on the interface from both media scattering: 0 E A ex j B ex j y 0, 0, 1, 1, 0 E C ex j D
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics.
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 217 MOS Transistor Theory, MOS Model Lecture Outline! Semiconductor Physics " Band gaps " Field Effects! MOS Physics " Cutoff
More informationFlow Velocity Measurement Principles of Hot Film Anemometry
Flow Velocity Measurement Princiles of Hot Film Anemometry The hot film anemometer (HFA) is made of a thin, structured, metallic resistive film ( heater ) which is deosited onto a substrate. In the oerating
More informationSpin Diffusion and Relaxation in a Nonuniform Magnetic Field.
Sin Diffusion and Relaxation in a Nonuniform Magnetic Field. G.P. Berman, B. M. Chernobrod, V.N. Gorshkov, Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 V.I. Tsifrinovich
More informationAN3400 Application note
Application note Analysis an simulation of a BJT complementary pair in a self-oscillating CFL solution ntrouction The steay-state oscillation of a novel zero-voltages switching (ZS) clampe-voltage (C)
More informationLecture 6 : Dimensionality Reduction
CPS290: Algorithmic Founations of Data Science February 3, 207 Lecture 6 : Dimensionality Reuction Lecturer: Kamesh Munagala Scribe: Kamesh Munagala In this lecture, we will consier the roblem of maing
More informationEE 560 MOS TRANSISTOR THEORY
1 EE 560 MOS TRANSISTOR THEORY PART 1 TWO TERMINAL MOS STRUCTURE V G (GATE VOLTAGE) 2 GATE OXIDE SiO 2 SUBSTRATE p-type doped Si (N A = 10 15 to 10 16 cm -3 ) t ox V B (SUBSTRATE VOLTAGE) EQUILIBRIUM:
More informationRadar Dish. Armature controlled dc motor. Inside. θ r input. Outside. θ D output. θ m. Gearbox. Control Transmitter. Control. θ D.
Radar Dish ME 304 CONTROL SYSTEMS Mechanical Engineering Deartment, Middle East Technical University Armature controlled dc motor Outside θ D outut Inside θ r inut r θ m Gearbox Control Transmitter θ D
More informationPHYSICAL REVIEW LETTERS
PHYSICAL REVIEW LETTERS VOLUME 81 20 JULY 1998 NUMBER 3 Searated-Path Ramsey Atom Interferometer P. D. Featonby, G. S. Summy, C. L. Webb, R. M. Godun, M. K. Oberthaler, A. C. Wilson, C. J. Foot, and K.
More informationTEST 2 (PHY 250) Figure Figure P26.21
TEST 2 (PHY 250) 1. a) Write the efinition (in a full sentence) of electric potential. b) What is a capacitor? c) Relate the electric torque, exerte on a molecule in a uniform electric fiel, with the ipole
More information16. CHARACTERISTICS OF SHOCK-WAVE UNDER LORENTZ FORCE AND ENERGY EXCHANGE
16. CHARACTERISTICS OF SHOCK-WAVE UNDER LORENTZ FORCE AND ENERGY EXCHANGE H. Yamasaki, M. Abe and Y. Okuno Graduate School at Nagatsuta, Tokyo Institute of Technology 459, Nagatsuta, Midori-ku, Yokohama,
More informationChapter 4 PN Junctions
/5/14 Chater 4 Junction 4.1 Builing Block of the Junction Theory Donor ion V + I -tye -tye I ioe ymbol Revere bia Forwar bia V junction i reent in erha every emiconuctor evice. Slie 4-76 1-76 (a) 4.1.1
More information