Lecture #11. Lecture

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1 Lecture #11 Semiconductor Diodes and Basic Circuits Outline/Learning Objectives: Simple circuits using ideal diode model, constant voltage drop model, and mathematical (exponential) model. Use of graphical analysis, the loadline concept an iterative numerical methods. Study diode rectifier, voltagelimiting, peakdetector, and clamping cir cuits. Explain the temperature and breakdown behavior of a diode. Analyze and design basic ac/dc converters. Lecture

2 Why Study Diodes and Brief Introduction to Diodes? pn Junction Diode The most common diode is the silicon pn junction diode. It has nonlinear IV characteristics which is responsible for many of its applications (see page 9 4 for 2 circuit examples). 1. Power rectifiers to convert ac to dc; 2. Signal detection in radio receivers; 3. Waveform clamp in digital circuits; 4. Photodetector; Solar cell; Light emitter etc. It is also a principal part of other semiconductor devices, 1. in bipolar junction transistors, or 2. as the source/substrate junction of MOSFETs. Lecture

3 Examples of 2 practical circuits using diodes AM Diode Detection Circuit I L ac line 120V rms 60 Hz v S Diode Rectifier Filter Voltage Regulator V L Load t t t t t Block diagram of a dc power supply Lecture

4 DC Electrical Characteristics The ideal diode model 1. Ideal Diode Model R=10kΩ I D V=10V Ideal Diode =0V I D (ma) > short circuit On < Off open circuit 1.0 = 0 for I D > 0 and I D = 0 for < I D = = 1mA 10kΩ. For V = 10 V, 10V = 10 4 I D = 0 since I D = 0 for < 0. Lecture

5 Constant voltage drop diode model 2. Constant Voltage Drop Model R=10kΩ 1.0 I D Diode I D (ma) V=10V 0.25 > On < Off open circuit 1.0 = for I D > 0 and I D = 0 for <. 10 I D = 10kΩ. Lecture

6 Diode Current Mathematical Model qv D = = I s e i D I i I s nkt 1. Reverse saturation component (I s ) is independent of the junction potential. I s doubles for every 10 o increase in temperature, near room temperature. n ideality factor (1 to 2) q electron charge ( 1.6x10 19 C) v D diode voltage T absolute temperature k Boltzmann constant 1.38x10 23 J K nkt Reverse biases: i D I s for v D «= nv. Zero V:. q T i D = 0 qv D nkt Forward biases: i D = I s e for v D» nv T. (usually 4V T 0.1V) Lecture

7 Diode Temperature Coefficient i D I s e qv D nkt i 1 D = v D V T 1 kt = ln q I s i D ln. I s dv D dt = k q i D ln I s kt 1 q I s di s dt v D V T di s = = T dt I s v D V G0 3V T in V T K. 2 i D» I s ; I s n i and Is BT 3 e E G kt. For example, v D = 0.65 V, E G = 1.12 ev and V T = 0.025V. dv D dt v D V G0 3V T E ( ) mv G = = = V T 300 K G0 = q Explain how it is used to make a thermometer. Lecture

8 Diode Breakdown Under Reverse Bias J = φ J v R for ( v R > 0 ). w d = x n x p = 2ε Si 1 1 ( φj v q R ) N A N D qn D Electric Field φ J (x) v D <0 v D =0 x p x n x x p x n x x p x n φ J x qn A Zener Breakdown occurs only in heavily doped diods. The heavy doping results in narrow depletion regions. Reverse bias causes tunneling between CB and VB with I increasing rapidly. The breakdown voltage (V Z ) can vary from a few volts to 100 s of V. Zener diodes are used to maintain a constant V for varying I s. Used in voltage regulators. Also V Z increases as T decreases. Lecture

9 Diode Breakdown Under Reverse Bias V BR V Z I D I V I V I R BR V I R Z V V BR V Z Avalanche Zener Avalanche Breakdown occurs at high voltages V>V Z. Here, carriers gain sufficient energy from Efield to knock electronhole pairs from covalent bonds. Also V Z increases as T increases. Lecture

10 Diode Circuit Analysis 1. Graphical analysis using load line. 2. Analysis with mathematical model of diode. 3. Simplified analysis using ideal diode model. 4. Simplified analysis using constant voltage drop model. 1. Graphical analysis using load line 1. LoadLine Analysis R=10kΩ I D V=10V I D (ma) quiescent point (0.95 ma, 0.6V) load line V =. = 0 I D = ; I R D = 0 = V I D R Quiescent point is the intersection of the diode s IV and the load line. This gives the operating point of the circuit. V Lecture

11 PSPICE EXAMPLE R2 R2 10k D1 10k D1 Dbreak Dbreak VOFF = 0 VAMPL = 2.0 FREQ = 1k R1 1k V1 U1 OUT OPAMP VOFF = 0 VAMPL = 2.0 FREQ = 1k R1 1k V1 Rin 2MEG E1 E Rout 75 *Libraries: * Local Libraries : * From [PSPICE NETLIST] section of C:\Program Files\OrcadLite\PSpice\PSpice.ini file:.lib "nom.lib" *Analysis directives:.tran 0 10m 0 0.1u.PROBE V(*) I(*) W(*) D(*) NOISE(*).INC ".\example4schematic1.net" **** INCLUDING example4schematic1.net **** * source EXAMPLE4 Lecture

12 PSPICE EXAMPLE (Cont d) D_D1 N00162 N00115 Dbreak E_E1 0 N01347 N R_Rout N01347 N R_Rin 0 N MEG V_V1 N SIN k R_R2 N00162 N k R_R1 N00351 N k **** RESUMING example4schematic1example4profile.sim.cir ****.END **** Diode MODEL PARAMETERS ************************************************************************ Dbreak IS E15 RS.1 CJO E15 Lecture

13 PSPICE EXAMPLE (Cont d) 20V 10V 0V 10V 0s 1ms 2ms 3ms 4ms 5ms 6ms 7ms 8ms 9ms 10ms V(R2:2) V(R1:1) Time Lecture

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