General Purpose Transistors

Transcription

1 PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements SO23 MAXIMUM RAINGS (A = 25 unless otherwise noted) ollector-emitter oltage ollector-base oltage Rating Symbol alue Unit B856 B857 B858 B856 B857 B858 EO BO 8 EmitterBase oltage EBO 5. ollector urrent ontinuous I 1 madc 1 BASE 3 OLLEOR 2 EMIER HERMAL HARAERISIS haracteristic Symbol Max Unit otal Device Dissipation FR5 Board, (Note 1.) A = 25 Derate above 25 hermal Resistance, Junction to Ambient otal Device Dissipation Alumina Substrate, (Note 2.) A = 25 Derate above 25 hermal Resistance, Junction to Ambient PD mw mw/ R JA 556 /W PD mw mw/ R JA 417 /W Junction and Storage emperature J, stg 55 to FR5 = x.75 x.62 in 2. Alumina =.4 x.3 x.24 in. 99.5% alumina.

2 ELERIAL HARAERISIS (A = 25 unless otherwise noted) OFF HARAERISIS ollectoremitter Breakdown oltage (I = 1 ma) ollectoremitter Breakdown oltage (I = 1 µa, EB = ) ollectorbase Breakdown oltage (I = 1 A) EmitterBase Breakdown oltage (IE = A) ollector utoff urrent (B = ) ollector utoff urrent (B =, A = 15 ) ON HARAERISIS D urrent Gain (I = ma, E = 5. ) haracteristic Symbol Min yp Max Unit B856A,B857A,B858A B856B,B857B,B858B B857,B858 (BR)EO (BR)ES 8 (BR)BO 8 (BR)EBO IBO hfe na µa ollectoremitter Saturation oltage (I = 1 ma, IB =.5 ma) (I = 1 ma, IB = 5. ma) BaseEmitter Saturation oltage (I = 1 ma, IB =.5 ma) (I = 1 ma, IB = 5. ma) BaseEmitter On oltage (I = ma, E = 5. ) (I = 1 ma, E = 5. ) SMALLSIGNAL HARAERISIS urrentgain Bandwidth Product (I = 1 ma, E = 5. dc, f = 1 MHz) Output apacitance (B = 1, f = MHz) E(sat) BE(sat) BE(on) f 1 MHz ob 4.5 pf Noise Figure (I = ma, E = 5. dc, RS = kω, f = khz, BW = 2 Hz) B856,B857,B858 Series NF 1 db DEIE MARKING AND ORDERING INFORMAION Device Marking Package Shipping B856AL1 3A SO-23 3/ape&Reel B856BL1 3B SO-23 3/ape&Reel B857AL1 3E SO-23 3/ape&Reel B857BL1 3F SO-23 3/ape&Reel B857L1 3G SO-23 3/ape&Reel B858AL1 3J SO-23 3/ape&Reel B858BL1 3K SO-23 3/ape&Reel B858L1 3L SO-23 3/ape&Reel

3 B857/ B858 h FE, NORMALIZED D URREN GAIN E = 1 = 25 A, OLAGE (OLS) = 25 I /I =1 BE(sat) = 1 BE(on) I /I = 1 E(sat) B I, OLLEOR URREN (madc) Figure 1. Normalized D urrent Gain I, OLLEOR URREN (madc) Figure 2. Saturation and On oltages E, OLLEOR EMIER OLAGE () I = 1 ma I = 2 ma I = ma A = 25 I = 2 ma I = 1 ma θ B, EMPERAURE OEFFIIEN (m/ ) to I, BASE URREN (ma) B Figure 3. ollector Saturation Region I, OLLEOR URREN (ma) Figure 4. BaseEmitter emperature oefficient , OLAGE (OLS) ib ob A =25 f, URREN GAIN BANDWIDH PRODU (MHz) E =1 A = , REERSE OLAGE (OLS) R Figure 5. apacitances I, OLLEOR URREN (madc) Figure 6. urrentgain Bandwidth Product

4 B856 h FE, D URREN GAIN (NORMALIZED), OLLEOR EMIER OLAGE (OLS) E I = E = 5. A = 25 1 ma I, OLLEOR URREN (ma) Figure 7. D urrent Gain 2mA 1mA I, BASE URREN (ma) B Figure 9. ollector Saturation Region 2mA θ B, EMPERAURE OEFFIIEN (m/ ), OLAGE (OLS) J = 25 I /I B = 1 E = 5. I /I B = ma J = I, OLLEOR URREN (ma) Figure 8. On oltage θ B for BE 55 to I, OLLEOR URREN (ma) Figure 1. BaseEmitter emperature oefficient, APAIANE (pf) ib J = 25 ob f, URREN GAIN BANDWIDH PRODU E = , REERSE OLAGE (OLS) R Figure 11. apacitance I, OLLEOR URREN (ma) Figure 12. urrentgain Bandwidth Product

5 I, OLLEOR URREN (ma) r( t), RANSIEN HERMAL RESISANE (NORMALIZED) D= SINGLE PULSE SINGLE PULSE A = 25 J = 25 E, OLLEOREMIER OLAGE () Figure 14. Active Region Safe Operating Area 1s P (pk) t, IME (ms) t 1 t 2 Figure 13. hermal Response 3 ms Z θj (t) = r(t) R θj R θj = 83.3 /W MAX Z θja (t) = r(t) R θja R θja = 2 /W MAX D URES APPLY FOR POWER PULSE RAIN SHOWN READ IME A t 1 J(pk) = P (pk) R θj (t).3.2 DUY YLE, D = t /t k k 5.k 1k 2 1 B558 1 B557 B BONDING WIRE LIMI HERMAL LIMI SEOND BREAKDOWN LIMI he safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. he data of Figure 14 is based upon = 15 ; or J(pk) A is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided < 15. may be calculated from the data in Figure 13. At high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.

6 SO-23.63(1.6).47(1.2).122(3.1).16(2.7).11(2.8).83(2.1).6(.15)MIN..8(4).7(1.78).8().3(.8).4(.1)MAX..2(.5).12(.3).55(1.4).35(.89) Dimensions in inches and (millimeters)

7 Ordering Information: Device PN Packing Part Number G (1) WS ape&reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix G ;Halogen free product for packing code suffix H ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "ypical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life saving implant or other applications intended for life sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. ustomers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.