EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.

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1 EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.

2 INTEGRTED CIRCUITS DT SHEET Supersedes data of 1997 ug Oct 30

3 FETURES pplications: Wave and pulse shapers stable multivibrators Monostable multivibrators. Complies with JEDEC standard no. 7 ESD protection: HBM EI/JESD exceeds 2000 V MM EI/JESD exceeds 200 V. Specified from 40 to +85 C and 40 to +125 C. DESCRIPTION The 74HC14 and 74HCT14 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7. The 74HC14 and 74HCT14 provide six inverting buffers with Schmitt-trigger action. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. QUICK REFERENCE DT GND = 0 V; T amb =25 C; t r = t f = 6 ns SYMBOL PRMETER CONDITIONS Notes 1. C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V CC 2 f i N+Σ(C L V CC 2 f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in Volts; N = total load switching outputs; Σ(C L V CC 2 f o ) = sum of the outputs. 2. For type 74HC14 the condition is V I = GND to V CC. For type 74HCT14 the condition is V I = GND to V CC 1.5 V. TYPICL t PHL /t PLH propagation delay n to ny C L = 15 pf; V CC = 5 V ns C I input capacitance pf C PD power dissipation capacitance per gate notes 1 and pf HC HCT UNIT 2003 Oct 30 2

4 FUNCTION TBLE INPUT n L H OUTPUT ny H L Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMTION PCKGE TYPE NUMBER TEMPERTURE RNGE PINS PCKGE MTERIL CODE 74HC14D 40 to +125 C 14 SO14 plastic SOT HCT14D 40 to +125 C 14 SO14 plastic SOT HC14DB 40 to +125 C 14 SSOP14 plastic SOT HCT14DB 40 to +125 C 14 SSOP14 plastic SOT HC14N 40 to +125 C 14 DIP14 plastic SOT HCT14N 40 to +125 C 14 DIP14 plastic SOT HC14PW 40 to +125 C 14 TSSOP14 plastic SOT HCT14PW 40 to +125 C 14 TSSOP14 plastic SOT HC14BQ 40 to +125 C 14 DHVQFN14 plastic SOT HCT14BQ 40 to +125 C 14 DHVQFN14 plastic SOT762-1 PINNING PIN SYMBOL DESCRIPTION 1 1 data input 2 1Y data output 3 2 data input 4 2Y data output 5 3 data input 6 3Y data output 7 GND ground (0 V) 8 4Y data output 9 4 data input 10 5Y data output 11 5 data input 12 6Y data output 13 6 data input 14 V CC supply voltage 2003 Oct 30 3

5 V CC 1 V CC Y Y Y Y 2Y Y 2Y 4 GND (1) Y Y GND 7 8 4Y 3Y MN Top view GND 4Y MBL760 (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input. Fig.1 Pin configuration. Fig.2 Pin configuration DHVQFN Y Y Y Y Y Y 12 MN MN841 Fig.3 Logic symbol. Fig.4 IEC logic symbol Oct 30 4

6 1 1Y Y Y Y Y 10 Y MN Y MN842 Fig.5 Functional diagram. Fig.6 Logic diagram (one Schmitt trigger) Oct 30 5

7 RECOMMENDED OPERTING CONDITIONS SYMBOL PRMETER CONDITIONS 74HC14 74HCT14 MIN. TYP. MX. MIN. TYP. MX. V CC supply voltage V V I input voltage 0 V CC 0 V CC V V O output voltage 0 V CC 0 V CC V T amb operating ambient temperature see DC and C characteristics per device C C UNIT LIMITING VLUES In accordance with the bsolute Maximum System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL PRMETER CONDITIONS MIN. MX. UNIT V CC supply voltage V I IK input diode current V I < 0.5 V or V I >V CC V ±20 m I OK output diode current V O < 0.5 V or V O >V CC V ±20 m I O Notes output source or sink current 0.5V<V O <V CC V ±25 m I CC ;I GND V CC or GND current 50 m T stg storage temperature C P tot power dissipation T amb = 40 to +125 C DIP14 packages; note mw Other packages; note mw 1. For DIP14 packages: above 70 C the value of P D derates linearly with 12 mw/k. 2. For SO14 packages: above 70 C the value of P D derates linearly with 8 mw/k. For (T)SSOP14 packages: above 60 C the value of P D derates linearly with 5.5 mw/k. For DHVQFN14 packages: above 60 C the value of P D derates linearly with 4.5 mw/k Oct 30 6

8 DC CHRCTERISTICS Type 74HC14 t recommended operating conditions; voltages are referenced to GND (ground = 0 V). SYMBOL T amb =25 C V OH V OL I LI I CC PRMETER HIGH-level output voltage LOW-level output voltage input leakage current T amb = 40 to +85 C V OH V OL I LI I CC quiescent supply current HIGH-level output voltage LOW-level output voltage input leakage current quiescent supply current TEST CONDITIONS OTHER V CC (V) MIN. TYP. (1) MX. UNIT V I =V IH or V IL I O = 20 µ V I O = 20 µ V I O = 20 µ V I O = 4.0 m V I O = 5.2 m V V I =V IH or V IL I O =20µ V I O =20µ V I O =20µ V I O = 4.0 m V I O = 5.2 m V V I =V CC or GND µ V I =V CC or GND; I O = µ V I =V IH or V IL I O = 20 µ V I O = 20 µ V I O = 20 µ V I O = 4.0 m V I O = 5.2 m V V I =V IH or V IL I O =20µ V I O =20µ V I O =20µ V I O = 4.0 m V I O = 5.2 m V V I =V CC or GND µ V I =V CC or GND; I O = µ 2003 Oct 30 7

9 T amb = 40 to +125 C V OH V OL I LI SYMBOL I CC Note PRMETER HIGH-level output voltage LOW-level output voltage input leakage current quiescent supply current 1. ll typical values are measured at T amb =25 C. TEST CONDITIONS OTHER V CC (V) MIN. TYP. (1) MX. UNIT V I =V IH or V IL I O = 20 µ V I O = 20 µ V I O = 20 µ V I O = 4.0 m V I O = 5.2 m V V I =V IH or V IL I O =20µ V I O =20µ V I O =20µ V I O = 4.0 m V I O = 5.2 m V V I =V CC or GND µ V I =V CC or GND; I O = µ 2003 Oct 30 8

10 Type 74HCT14 t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Note SYMBOL T amb =25 C V OH V OL PRMETER HIGH-level output voltage LOW-level output voltage 1. ll typical values are measured at T amb =25 C. TEST CONDITIONS OTHER 2003 Oct 30 9 V CC (V) MIN. TYP. (1) MX. UNIT V I =V IH or V IL I O = 20 µ V I O = 4.0 m V V I =V IH or V IL I O =20µ V I O = 4.0 m V I LI input leakage current V I =V CC or GND µ I CC I CC T amb = 40 to +85 C V OH V OL quiescent supply current additional supply current per input HIGH-level output voltage LOW-level output voltage V I =V CC or GND; I O = µ V I =V CC 2.1 V; I O = to µ V I =V IH or V IL I O = 20 µ V I O = 4.0 m V V I =V IH or V IL I O =20µ V I O = 4.0 m V I LI input leakage current V I =V CC or GND µ I CC I CC T amb = 40 to +125 C V OH V OL quiescent supply current additional supply current per input HIGH-level output voltage LOW-level output voltage V I =V CC or GND; I O = µ V I =V CC 2.1 V; I O = to µ V I =V IH or V IL I O = 20 µ V I O = 4.0 m V V I =V IH or V IL I O =20µ V I O = 4.0 m V I LI input leakage current V I =V CC or GND µ I CC I CC quiescent supply current additional supply current per input V I =V CC or GND; I O = µ V I =V CC 2.1 V; I O = to µ

11 TRNSFER CHRCTERISTICS Type 74HC t recommended operating conditions; voltages are referenced to GND (ground = 0 V). SYMBOL T amb =25 C; note 1 Note PRMETER 1. ll typical values are measured at T amb =25 C. TEST CONDITIONS WVEFORMS V CC (V) MIN. TYP. MX. UNIT V T+ positive-going threshold Figs 7 and V V V V T negative-going threshold Figs 7 and V V V V H hysteresis (V T+ V T ) Figs 7 and V T amb = 40 to +85 C V V V T+ positive-going threshold Figs 7 and V V V V T negative-going threshold Figs 7 and V V V V H hysteresis (V T+ V T ) Figs 7 and V T amb = 40 to +125 C V V V T+ positive-going threshold Figs 7 and V V V V T negative-going threshold Figs 7 and V V V V H hysteresis (V T+ V T ) Figs 7 and V V V 2003 Oct 30 10

12 Family 74HCT t recommended operating conditions: voltages are referenced to GND (ground = 0 V) Note SYMBOL T amb =25 C; note 1 PRMETER 1. ll typical values are measured at T amb =25 C. TEST CONDITIONS WVEFORMS V CC (V) MIN. TYP. MX. UNIT V T+ positive-going threshold Figs 7 and V V V T negative-going threshold Figs 7 and V V V H hysteresis (V T+ V T ) Figs 7 and V T amb = 40 to +85 C V V T+ positive-going threshold Figs 7 and V V V T negative-going threshold Figs 7 and V V V H hysteresis (V T+ V T ) Figs 7 and V T amb = 40 to +125 C V V T+ positive-going threshold Figs 7 and V V V T negative-going threshold Figs 7 and V V V H hysteresis (V T+ V T ) Figs 7 and V V 2003 Oct 30 11

13 C CHRCTERISTICS Type 74HC GND = 0 V; t f = t f = 6 ns; C L =50pF SYMBOL T amb =25 C; note 1 Note PRMETER 1. ll typical values are measured at T amb =25 C. TEST CONDITIONS WVEFORMS V CC (V) MIN. TYP. MX. UNIT t PHL /t PLH propagation delay n to ny see Fig ns ns ns t THL /t TLH output transition time see Fig ns T amb = 40 to +85 C ns ns t PHL /t PLH propagation delay n to ny see Fig ns ns ns t THL /t TLH output transition time see Fig ns T amb = 40 to +125 C ns ns t PHL /t PLH propagation delay n to ny see Fig ns ns ns t THL /t TLH output transition time see Fig ns ns ns 2003 Oct 30 12

14 Type 74HCT GND = 0 V; t r =t f = 6 ns; C L =50pF SYMBOL PRMETER TEST CONDITIONS WVEFORMS V CC (V) MIN. TYP. MX. UNIT T amb =25 C; note 1 t PHL /t PLH propagation delay n to ny see Fig ns t THL /t TLH output transition time see Fig ns T amb = 40 to +85 C t PHL /t PLH propagation delay n to ny see Fig ns t THL /t TLH output transition time see Fig ns T amb = 40 to +125 C t PHL /t PLH propagation delay n to ny see Fig ns t THL /t TLH output transition time see Fig ns Note 1. ll typical values are measured at T amb =25 C. TRNSFER CHRCTERISTIC WVEFORMS V O V T+ V I V H V T V T VH V T+ MN844 MN845 V I V O V T+ and V T are between limits of 20% and 70%. Fig.7 Transfer characteristic. Fig.8 The definitions of V T+,V T and V H Oct 30 13

15 50 I CC (µ) MN I CC (m) MN V I (V) V I (V) V CC =2V. Fig.9 Typical 74HC14 transfer characteristics. V CC = 4.5 V. Fig.10 Typical 74HC14 transfer characteristics. 1.0 I CC (m) MN I CC (m) MN V I (V) V I (V) V CC =6V. Fig.11 Typical 74HC14 transfer characteristics. V CC = 4.5 V. Fig.12 Typical 74HCT14 transfer characteristics Oct 30 14

16 1.8 handbook, I halfpage CC (m) 1.5 MN V I (V) V CC = 5.5 V. Fig.13 Typical 74HCT14 transfer characteristics. C WVEFORMS V I n input GND V M V M t PHL t PLH V OH ny output V OL 90% V M V M 10% t THL t TLH MN722 74HC14: V M = 50%; V I = GND to V CC. 74HCT14: V M = 1.3 V; V I = GND to 3.0 V. Fig.14 The input (n) to output (ny) propagation delays and output transitions times Oct 30 15

17 handbook, full pagewidth PULSE GENERTOR V I R T V CC D.U.T. V O C L = 50 pf S1 R L = 1 kω V CC open GND MN742 TEST t PLH /t PHL t PLZ /t PZL t PHZ /t PZH S1 open V CC GND Definitions for test circuit: R L = Load resistor. C L = load capacitance including jig and probe capacitance. R T = termination resistance should be equal to the output impedance Z o of the pulse generator. Fig.15 Load circuitry for switching times Oct 30 16

18 PPLICTION INFORMTION The slow input rise and fall times cause additional power dissipation. This can be calculated using the following formula: P ad =f i (t r I CC(V) +t f I CC(V) ) V CC. Where: P ad = additional power dissipation (µw); f i = input frequency (MHz); t r = input rise time (µs); 10% to 90%; t f = input fall time (µs); 10% to 90%; I CC(V) = average additional supply current (µ). I CC(V) differs with positive or negative input transitions, as shown in Figs 16 and 17. For 74HC/HCT14 used in a relaxation oscillator circuit, see Fig.18. Note to application information ll values given are typical unless otherwise specified. 400 I CC(V) (µ) positive - going edge MN852 negative - going edge V 6 CC (V) Linear change of V I between 0.1V CC to 0.9V CC Fig.16 verage I CC for 74HC14 Schmitt trigger devices. 400 I CC(V) (µ) MN positive - going egde edge R 200 C 100 negative - going egde edge MN V 6 CC (V) Linear change of V I between 0.1V CC to 0.9V CC. Fig.17 verage I CC for HCT Schmitt trigger devices HC14 : f = T 0.8 RC HCT14 : f = T 0.67 RC Fig.18 Relaxation oscillator using 74HC/HCT Oct 30 17

19 PCKGE OUTLINES SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E X c y H E v M Z 14 8 Q pin 1 index 2 1 ( ) 3 θ L p 1 7 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Note max b p c D (1) E (1) e H (1) E L L p Q v w y Z Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT E06 MS Oct 30 18

20 DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 D M E seating plane 2 L 1 Z 14 e b b 1 8 w M c (e ) 1 M H pin 1 index E mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max. 1 2 (1) (1) min. max. b b 1 c D E e e 1 L M E M H w (1) Z max Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT G04 MO-001 SC Oct 30 19

21 TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 D E X c y H E v M Z 14 8 pin 1 index 2 1 Q ( ) 3 θ 1 7 e b p w M L detail X L p mm scale DIMENSIONS (mm are the original dimensions) UNIT b p c D (1) E (2) e H (1) E L L p Q v w y Z max. mm θ o 8 o 0 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT402-1 MO-153 EUROPEN PROJECTION ISSUE DTE Oct 30 20

22 DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; body 2.5 x 3 x 0.85 mm SOT762-1 D B E 1 c terminal 1 index area detail X terminal 1 index area e 1 e b 2 6 v M w M C C B y 1 C C y L 1 7 E h e D h X mm scale DIMENSIONS (mm are the original dimensions) UNIT (1) max. 1 b c D (1) D h E (1) E h e e1 L v w y y 1 mm Note 1. Plastic or metal protrusions of mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT MO EUROPEN PROJECTION ISSUE DTE Oct 30 21

23 DT SHEET STTUS LEVEL Notes DT SHEET STTUS (1) PRODUCT STTUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information pplications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified Oct 30 22

24 a worldwide company Contact information For additional information please visit Fax: For sales offices addresses send to: Koninklijke Philips Electronics N.V SC75 ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /03/pp23 Date of release: 2003 Oct 30 Document order number: